Presentation 600 W Halfbridge LLC Evaluation Board

600W halfbridge LLC
evaluation board
EVAL-600W-12V-LLC-A
EVAL-600W-12V-LLC-D
Analog
Digital
Di Domenico Francesco (IFAT PMM ACDC AE)
Zechner Florian (IFAT PMM ACDC AE)
Table of contents
1
General description
2
Efficiency results
3
Design concept
09.10.2015
Copyright © Infineon Technologies AG 2015. All rights reserved.
2
Table of contents
1
General description
2
Efficiency results
3
Design concept
09.10.2015
Copyright © Infineon Technologies AG 2015. All rights reserved.
3
General
Description:
The “EVAL-600W-12V-LLC-x“ - Evaluation board in the Analog version “-A” or digital controlled “-D”
shows how to design a Half-Bridge LLC stage of a server SMPS with the target to meet 80+ Titanium
standard efficiency requirements. On this purpose there has been applied CoolMOS™ P6
technology IPP60R190P6 600V Power MOSFET on the primary side and OptiMOS™ low voltage Power
MOSFET in SuperSO8 BSC010N04LS in the synchronous rectification secondary stage, in combination
with QR CoolSET™ ICE2QR2280Z, Hi-Low Side Driver 2EDL05N06PF, in the newest version a Low
Side Gate Driver 2EDN7524F. The system is controlled by a LLC Controller ICE2HS01G for the analog
or XMC4200 in the digital version.
Summary of features:
›
Output voltage: 12 V
›
Output current: 50 A
›
Peak efficiency @ 50% load > 97,8%
›
Efficiency @ 10% load > 95%
The following variants are available:
›
600W 12 V LLC analog version with CoolMOS™ P6, IPP60R190P6 , EVAL-600W-12V-LLC-A
›
600W 12 V LLC digital version with CoolMOS™ P6, IPP60R190P6 , EVAL-600W-12V-LLC-D
09.10.2015
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Example of system understanding: Infineon
demo solution for Titanium HV DC/DC stage
Half Bridge LLC with synchronous
rectification in center tap
configuration
Vin
350-410 VDC
Vin_nom
380 VDC
Vout_nom
12 VDC
Iout
50 A
Po
600 W
fres=f0
157 kHz
fmin
90 kHz
fmax
210 kHz
Transformer
turns ratio
16:1
Cr
66 nF
Lr
15.5 uH
Lm
195 uH
09.10.2015
Primary HV MOSFETs
SR MOSFETs
TM
CoolMOS
IPP60R190P6 OptiMOSTM BSC010N04LS
New generation
Reduced gate charge (Qg)
› Best FOM RDS(on) x Qg
› Reduced Eoff
› High body diode ruggedness › Best FOM RDS(on) x Qoss
HB Gate Drive IC
Bias QR Flyback
2EDL05N06PF
controller
Non isolated LS Gate Drive
ICE2QR2280Z
2EDN7524F
LLC controller
Digital XMC4200 / Analog ICE2HS01G
SR MOSFETs
BSC010N04LS
Resonant inductor Transformer
PQ35/35 core
RM12 core
Copyright © Infineon Technologies AG 2015. All rights reserved.
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Control board analog & digital
Two possible solution to control Infineon`s 600 W LLC evaluation board
Analog - ICE2HS01G
›
Resonant mode controller for Half-Bridge LLC
resonant converter with synchronous
rectification drives
›
Driving signal for synchronous rectification
which support full operation of Half-Bridge LLC
resonant converter
›
20-pin DSO package
›
30 kHz to 1MHz switching frequency
›
50% duty cycle for both primary and secondary
gate drives
›
Adjustable dead time with high accuracy
07.10.2015
Digital - XMC4200-Q48K256 AB
›
ARM® Cortex®-M4, 80 MHz, incl. single cycle
DSP MAC and floating point unit (FPU)
›
8-channel DMA + dedicated DMA for USB
›
USB 2.0 full-speed device
›
CPU Frequency: 80 MHz
›
eFlash: 256 kB including hardware ECC
›
40 kB SRAM
›
Package: PG-LQFP-48
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6
PCB boards layout: main power board and
control and bias daughter boards
›
Controller Board
09.10.2015
Power
Density>20W/inch3
Bias Board
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7
Main power board schematic
09.10.2015
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8
Bias board schematic
09.10.2015
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9
Analog control board schematic
09.10.2015
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10
Digital
Controller
XMC4200-Q48K256 AB
Digital control board schematic
09.10.2015
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11
BOM (rework from analog to digital)
Part Value
Pcs Tolerance
Device
Package Description
Assembling info
C3
10 n/50 V
1
C-EU_C0805
C0805
CAPACITOR,
Replace 470 n/50 V with 10 n/50 V
R19
330R
1 ±1%
R-EU_R0805
R0805
RESISTOR
Replace 4K3 with 330R
R20
330R
1 ±1%
R-EU_R0805
R0805
RESISTOR
Replace 4K3 with 330R
n.a.
n.a.
1 ±1%
R-EU_R0805
R0805
RESISTOR
Assemble 56R with n.a.
IC1
Board
1
Board
PCB
Digital_ Controlcard
09.10.2015
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Supplier
IFX
12
PCB structure
09.10.2015
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13
Table of contents
1
General description
2
Efficiency results
3
Design concept
09.10.2015
Copyright © Infineon Technologies AG 2015. All rights reserved.
14
Automated efficiency measurement
Efficiency
Combination of converter design
(resonant tank, transformer) and
proper HV device election
0,99
0,985
0,98
0,975
0,97
0,965
0,96
0,955
0,95
0,945
0,94
0,935
0,93
0,925
0,92
0,915
0,91
0,905
0,9
Proper selection of SR LV device and
secondary side
97.8% peak efficiency!
›
›
›
›
Highest Efficiency standard in
Computing applications
(HV DC/DC stage)
Output voltage: 12 VDC
Output current: 50 A
Efficiency: > 95% @ 10%
load, Vin = 380 VDC
Efficiency max: 97.8%, Vin
= 380 VDC
C7 180mOhm
0.1% Total accuracy
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49
IOUT [A]
07.10.2015
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10% Pmax Vin=380 Vdc
09.10.2015
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50% Pmax Vin=380 Vdc
1,2
1
0,8
Turn-off losses
0,6
Body diode losses
Driving losses
0,4
Conduction Losses
0,2
0
Losses spread on each device at 50%Pmax
[W]
2014-11-04
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17
100% Pmax Vin=380 Vdc
09.10.2015
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Table of contents
1
General description
2
Efficiency results
3
Design concept
09.10.2015
Copyright © Infineon Technologies AG 2015. All rights reserved.
19
Design procedure: input data
Vin _ nom
n
2  Vout _ nom
n Vo _ min
M min  K min(Q, m, Fx ) 
Vin _ max
2
M max
09.10.2015
n Vo _ max
 K max (Q, m, Fx ) 
Vin _ min
2
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Resonant tank components and related
resonant frequencies
› n=Vin_nom/(2xVo)=380/(2*12)≈16
› Lm=195 µH
› Lr=15.5 µH
› Ln=Lm/Lr=12.5
› Cr=66 nF
1
fo 
 157kHz
2  Lr  Cr
09.10.2015
1
fp 
 42.7kHz
2  ( Lr  Lm)  Cr
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Gain curves
DC - gain curve (600 W LLC hardware revision P6)
1,2
M max 
1,1
n  Vo _ max
Vin _ min
2
1
5A
gain
15 A
0,9
0,8
25 A
n Vo _ min
M min 
Vin _ max
2
35 A
50 A
0,7
0,6
frequency [Hz]
09.10.2015
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Energy related calculations
(Ref. IPP60R190P6 device parameters)
Im ag _ min 
2 2


n  Vo
 0.672 A
2  fsw _ max  Lm
1
Enres _ min   ( Lm  Lr )  I ² mag _ min  95.1 J
2
1
Encap _ max   (2Co (er ))  V ² DS _ max  9 J
2
09.10.2015
 Enres _ min  Encap _ max
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Qoss, Imag, pk, tdead,min, tecs relationship
Im,pk
IQ2
IQ 2(t )  Im, pk  (1 
IQ 2(t )  0
t
tecs
) t  tecs
t  tecs
tecs  f ( Rg , tot,Vgs, th,
Cds
)
Cgd
ICHB
Im,pk
tdead , min
1
0 IC (t )dt  2  Im, pk  tecs  Im, pk  (tdead, min  tecs )  2  Qoss , @ 400 V
HB
VHB
VBULK
tecs
09.10.2015
tdead,min
t
ecs
2

Q
oss, @ 400 V
1 tdead, min 

2
Im, pk
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Time related calculations
(Ref. IPP60R190P6 device parameters)
Im ag _ min 
Im ag _ max 
2 2

2 2

n  Vo

 0.672 A
2  fsw _ max  Lm
n  Vo

 1.66 A
2  fsw _ min  Lm
tecs 2  Qoss, @ 400V
tdead, min  
 130 n sec
2
Im ag , max
tecs 2  Qoss, @ 400V
tdead, max  
 311 n sec
2
Im ag, min
09.10.2015
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Main transformer structure:
PQ35/35 core with TDK PC95 ferrite material
09.10.2015
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26
Resonant choke: RM12 core, material N87
09.10.2015
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Support slides
600 W LLC evaluation board
Evaluation board page
–
–
–
–
–
Technical description
Datasheets
Parameters
Related material
Videos
– www.infineon.com/600w-llc-evaluationboard-a
– www.infineon.com/600w-llc-evaluationboard-d
Product family pages
–
–
–
–
–
–
Product brief
Application notes
Selection guides
Datasheets and portfolio
Videos
Simulation models
09.10.2015
–
–
–
–
www.infineon.com/p6
www.infineon.com/xmc
Resonant Mode Controller
www.infineon.com/optimos5-40v60v
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28