SEE Report

Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
Irradiation Test Report
Single Event Effect Test on Infineon Rad-Hard-MOSFETs
Dr Gerald Soelkner
IMM INP DC T PM
Dr. Stefan Gamerith
IMM PSD D HVM TD
Dr. Bernd Eisener
PMM RPD D HIR
Table of Contents
1
SCOPE
2
2
2.1
2.2
2.3
DEVICE INFORMATION
Applicable Documents
Devices Markings and Sample Preparation
Parameter Measurements
2
2
2
3
3
3.1
3.2
TEST SET-UP
Test Board
Measurement Equipment ...
3
3
3
4
4.1
4.2
4.3
HEAVY ION IRRADIATION FACILITY
Beam Parameters
Test Chamber
Dosimetry
5
5
5
5
5
5.1
5.2
5.3
TEST SEQUENCE
Beam Parameters and Test Criteria for all Tests
Test Bias Sequence for SEB-SOA
Test Bias Sequence for SEGR-SOA
5
5
6
6
6
6.1
6.2
6.3
TEST RESULTS
Test Devices
Details of Test Runs
Safe Operation Area Diagrams
6
6
6
10
8
CONCLUSION
10
1
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
1 SCOPE
This test report describes Single Event Effect (SEE) tests and results for radiation
hardened MOSFETs from Infineon with designated device types BUY25CS12J and
BUY25CS54A, in accordance to ESCC Basic Specification 25100.
Tests have been performed at the facility SPIRAL of Grand Accélérateur National
d'Ions Lourds (GANIL), Caen, France, week 14 (test GANIL2) and week 23 (test
GANIL3) in 2011.
For each test session Test Plans have been established and reviewed by ESA:

Test Plan GANIL2, April 04, 2011

Test Plan GANIL3, June 20, 2011
Fig. 1: Device packages: SMD2 on 3-pin TOadapter for BUY25CS54A (left) and TO257
(right) for BUY25CS12J
2 DEVICE INFORMATION
Part Type
Vds [V]
Vgs(th) [V]
Rds(on) [Ohm]
Idmax [A]
BUY25CS12J-01
250
2.0 – 4.0
0.13
12.5 (RT)
BUY25CS54A-01
250
2.0 – 4.0
0.03
54 (RT)
2. 1Applicable Documents

BUY25CS12J01_V3
Target Data Sheet for HiRel RadHard Power-MOS
(12.5A SMD05 package), Revision V3c, July 2011

BUY25CS54A01_V1
Target Data Sheet for HiRel RadHard Power-MOS
(54A, SMD2 package), Revision V1c, July 2011
2.2 Devices Markings and Sample Preparation
Devices are mounted either in SMD2 packages (BUY25CS54A) or TO257/SMD05
packages (BUY25CS12J) with the packages left unlidded. In order to contact
devices with the TO test sockets on bias boards SMD-packages have been
soldered
to
respective
3-pin-adapter
boards
(fig. 1)
to
connect
Gate/Drain/Source contacts of the MOSFETs.
Devices numbers are engraved on the backside of the TO257 package or scribed
on the metallization of adapter boards in the case of SMD. The engraving
represents information on wafer lot and wafer number as well as device number.
Prior to SEE tests imide layers on the chip’s surface have been chemically
removed.
2
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
Fig. 2: Test-Board with 10 positions with TO test sockets. Separate bias of UDS and UGS for each
device. Flat-band connector on back side. The arrangement of devices is such that the GANIL ion beam
irradiations all of the devices simultaneously (beam area: 200mm (horizontal) x 50mm (vertical).
2.3 Parameter Measurements
Test samples have passed on-wafer tests, notably BVDSS, Vgs(th), RDSON,
IDSS, IGSS with their parameters within predetermined upper/lower limits.
Parameter measurements have been performed on package- and adaptermounted devices to check that devices have not been degraded.
3. TEST SET-UP
3.1 Test Board
The test board was designed to accommodate up to 10 test samples, each
consisting of an individual bias circuit (fig. 2). This test board was fixed to the
mechanical positioning stage provided at the GANIL beam line. All voltages UDS
and UGS were provided via a flat band cable from a switch board. The
oscilloscope output was left unconnected. The bias circuit is given in fig. 3.
3.2 Measurement Equipment
As a voltage source for UDS and for ID current measurements a Keithley 237
High Voltage Measurement Unit has been employed.
3
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
Fig. 1: Test circuit for SEB/SEGR test (GANIL 2011).
Gate voltage UGS was provided by an Agilent E3649A Dual Output DC Power
Supply with gate current measured by a HP34401A Multimeter.
Voltages were set manually as were all recordings of run number, time, sample
number, PIGS current. The irradiation log provided by GANIL operators, in
addition, give fluence values for each test run (GANIL Report on Infineon
Irradiations April 20, 2011, and July 5 , 2011).
Fig. 4: Test Board positioning at GANIL beam line exit window
4
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
4 HEAVY ION IRRADIATION FACILITY
4. 1 Beam Parameters
SPIRAL at GANIL is a cyclotron capable of providing heavy ions of very high
energy, in the order 50MeV/u, i.e. 6 GeV per ion for 129Xe (46+ charge state)
employed in irradiation runs GANIL2 and GANIL3.
Table 5-1: GANIL beam characteristics for 129Xe (TRIM based).
Run
Setting
GANIL2
Degrader
Air [mm]
LET [MeVcm2/mg]
Range [µm]
Al 500µm
98
55.14
90.03
GANIL3
A
Al 500µm
93
55.1
90.28
GANIL3
B
Al 300µm
150
38.02
278.9
The change of beam parameters, i.e. insertion of Al-degraders and adjustment of
appropriate air space takes a few minutes.
Parameters of GANIL2 and GANIL3(A) were chosen to provide the highest
possible LET for a given minimum of penetration depth, determined by the
thickness of the – active – epitaxial layer of the MOSFETs (less than 50µm
including top metallization).
Parameter GANIL3B was chosen to not only penetrate the epitaxial layer but also
to fully penetrate the device substrate.
4.2 Testing Position and Test Board Mounting
Irradiation is performed in air with a minimum gap spacing of 53 mm. The test
board is screwed onto a motorized positioning frame (fig. 4). The beam exit of
the vacuum tube has a 10 µm stainless steel window. Beam size is 200 mm
(horizontal) and 50 mm (vertical). With the bias board as in fig. 2, all devices are
irradiated simultaneously and further device positioning is usually not necessary.
4.3 Dosimetry
Control of beam homogeneity and dosimetry lies within the responsibility of
GANIL operators. An irradiation log provided by GANIL gives fluence values for
each test run (GANIL Report on Infineon Irradiations April 20, 2011, and July 5 ,
2011), including fluence-to-fail, if applicable.
5 TESTING SEQUENCE
5.1 Beam Parameters and Test Criteria for all Tests:
 LET
see Table 5-1
 Flux
1E4 ions/cm2/s (plan). GANIL2: 7E3-1.1E4; GANIL3: 1.3E3-4.2E3
 Fluence
3E+5 ions/cm2
 Normal incidence of ion beam
 Destructive mode. FAIL current criteria: IDS>2 µA or IGS>100 nA.
 Required number of test samples per test case: 1(for FAIL)/3(for PASS)
5
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
 Post Irradiation Gate Stress (PIGS) test at any UDS (at respective UDS, UGS
down to -20V, in steps of -5V). FAIL criterion: either IDS or IGS>100nA
5.2 Test Bias Sequence to determine Single Event Breakdown (SEB)-SOA
UGS: 0 V
UDS: Start at 260V (or UDS,max). If FAIL occurs UDS is stepped-down by 10V until PASS.
5.3 Test Bias Sequence to determine Single Event Gate Rupture (SEGR)-SOA
UGS: -5 V to –20 V, starting at -5 V, steps of -5 V.
UDS: Start at maximum UDS at which PASS value was obtained for previous UGS-test
sequence (or UGS=0°V). If FAIL occurs UDS is stepped-down by 10V until PASS.
6. TEST Results
6.1 Test Devices
In the two campaigns GANIL2 and GANIL3 devices groups originating from four
wafer lots underwent ion irradiation tests (see Tab: 6-1). Devices are mounted in
SMD and TO257 packages, as indicated in the “descriptor” of Tab.6-1.
Tab. 6-1: Device groups in SEE tests GANIL2 and GANIL3 of 4 different wafer lots.
Lot
VE106719.01
VE112380
VE109331
VE109331
VE117988
Wafer
7
2
25
25
5
GANIL2
GANIL3 Descriptor
SMD05
SMD2
TO257
TO257
SMD2
6.2 Details of Test Runs
Details of individual test runs are given in Tab. 6-2 (GANIL2) and Tab. 6-3
(GANIL3).
6
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
Tab. 6-2: Devices tested in campaign GANIL2.
April 5, 2011
GANIL2
Lot
Wafer
Chip
Pos
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
VE112380
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
3
3
3
3
3
3
4
4
4
4
4
4
5
5
5
5
5
5
46
56
47
55
48
54
49
53
50
52
57
58
63
59
59
59
59
64
64
64
64
64
60
60
65
65
65
65
61
61
61
1
2
3
4
5
1
6
2
7
3
8
4
9
5
10
1
2
7
3
3
3
3
8
8
8
8
8
4
4
9
9
9
9
5
5
5
Ion
Fluence
(/cm²)
3.0E+05
3.0E+05
3.0E+05
3.0E+05
2.7E+05
3.0E+05
3.5E+04
8.7E+04
3.0E+05
3.0E+05
3.0E+05
3.0E+05
3.0E+05
5.5E+04
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
7.99E+04
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
7.90E+03
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
8.05E+04
3.00E+05
3.00E+05
3.00E+05
1.92E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
2.47E+05
3.00E+05
4.43E+04
3.00E+05
3.00E+05
3.00E+05
4.88E+04
3.00E+05
3.00E+05
2.46E+05
Vgs test (V)
0 V
-5 V
-10 V
-15 V
-20 V
-20 V
-25 V
-20 V
-15 V
-20 V
-20 V
-20 V
-20 V
-25 V
-15 V
-20 V
-20 V
-20 V
-25 V
-25 V
-20 V
-20 V
-20 V
-25 V
-25 V
-25 V
0 V
0 V
0 V
-5 V
-5 V
-5 V
-10 V
-10 V
-10 V
-15 V
-15 V
-15 V
-20 V
-20 V
-20 V
-20 V
-20 V
-20 V
-20 V
-20 V
-20 V
-20 V
-25 V
-25 V
-25 V
-25 V
-25 V
-25 V
-25 V
-25 V
-25 V
Vds test (V)
260
260
260
260
260
260
260
260
260
200
220
240
260
160
260
220
240
260
100
120
220
240
260
100
120
140
260
260
260
260
260
260
260
260
260
260
260
260
200
140
160
180
200
160
180
200
220
240
80
100
60
80
100
120
60
80
100
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Nb events
0
0
0
0
0
0
1
1
0
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
1
0
1
0
0
0
1
0
0
1
PIGS
test
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
7
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
April 5, 2011
GANIL2
Lot
Wafer
Chip
Pos
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
VE106719.01
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
7
47
46
48
49
54
50
55
51
56
52
57
53
58
58
58
58
58
59
59
59
59
59
60
60
61
61
62
62
62
64
64
2
1
6
1
6
2
7
3
8
4
9
5
10
10
10
10
10
1
1
1
1
1
6
6
2
2
7
7
7
3
3
Ion
Fluence
(/cm²)
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
3.00E+05
4.70E+04
3.00E+05
3.00E+05
4.90E+04
3.00E+05
3.00E+05
3.00E+05
3.00E+05
4.70E+04
3.00E+05
2.35E+05
Vgs test (V)
0 V
0 V
0 V
-5 V
-5 V
-5 V
-10 V
-10 V
-10 V
-15 V
-15 V
-15 V
-15 V
-15 V
-15 V
-15 V
-15 V
-25 V
-25 V
-25 V
-25 V
-20 V
-20 V
-20 V
-20 V
-20 V
-25 V
-25 V
-25 V
-25 V
-25 V
Vds test(V)
260
260
260
260
260
260
260
260
260
260
260
260
180
200
220
240
260
100
120
140
160
220
240
260
220
240
100
120
140
100
120
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Nb events
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
1
PIGS
test
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
ok
Tab. 6-2 continued: Devices tested in campaign GANIL2.
8
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
Tab. 6-3: Devices tested in campaign GANIL3. Ion parameters A, B with reference to Tab. 5-1
June 22, 2011
GANIL3
Lot
Wafer
Chip
Pos
Ion
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE117988
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
VE109331
25
25
25
25
25
25
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
7
1
A
8
1
6
1
2
6
3
2
4
7
5
3
6
8
1
1
2
6
3
2
4
7
5
3
6
8
A
B
Fluence
(/cm²)
Vgs test
(V)
Vds test (V)
Nb events
300000
300000
300000
300000
300000
<300000
300000
300000
300000
300000
300000
300000
137900
300000
300000
300000
93600
300000
273000
300000
300000
300000
300000
300000
201000
300000
300000
300000
49000
300000
300000
300000
300000
300000
300000
300000
69600
300000
117600
300000
300000
30900
300000
300000
300000
300000
300000
300000
300000
89900
300000
300000
300000
300000
300000
300000
300000
0
0
-15
-20
-20
-25
0
-15
-10
-15
-15
-15
-20
-20
-20
-20
-20
-25
-25
-10
-15
-15
-20
-20
-20
-20
-20
-25
-25
0
-15
-20
-20
-20
-25
-25
-25
-25
-25
-25
-25
-25
0
-10
-15
-20
-25
-30
-25
-30
-25
-30
-30
-30
-30
-30
-30
200
260
260
240
260
100
260
260
260
220
240
260
200
140
160
170
180
80
100
260
240
260
160
180
200
160
180
80
100
260
260
220
240
260
80
100
120
80
100
100
120
140
260
260
260
260
260
260
260
260
260
220
240
260
220
240
260
ok
ok
ok
ok
PIGS
test
ok
ok
ok
ok
fail
fail
ok
fail
ok
ok
ok
ok
fail
ok
ok
ok
fail
ok
fail
ok
ok
ok
ok
ok
fail
ok
ok
ok
fail
ok
ok
ok
ok
ok
ok
ok
fail
ok
ok
ok
fail
ok
ok
ok
ok
ok
ok
ok
fail
ok
ok
ok
ok
ok
ok
ok
9
Single Event Effect Test on Infineon Rad-Hard MOSFETs Types BUY25CS12J and BUY25CS54A
September 26th, 2012
6.3 Safe Operation Area Diagram
From pass/fail results as shown in Tab. 6-2 and Tab. 6-3 Safe-Operation-Area
(SOA) plots pertaining to (negative) UGS and UDS can be derived in which
individual curves connects “PASS”- UDS values as a function of UGS (Fig. 6-1).
Maximum UDS of 260 V in all tests was limited by device breakdown (device
rated to 250 V). As a typical result, Fig. 6-1 shows that SEB and SEGR fails do
not occur at negative gate voltages UGS = 0 V to -15 V for ion beam parameters
given in Tab. 5-1.
Additionally, for beam parameters B in Tab. 5-1 (i.e. LET = 38 MeVcm2/mg and
279 µm of projected range), a “PASS” – UGS of -25 V is obtained at full UDS of
260 V, which shows a significant decrease of SEE sensitivity at lower LET despite
the much longer penetration length.
SOA BUY25CS-Family
280
260
Drain voltage (V)
240
220
200
180
LET = 55 MeVcm2/mg; d = 90 µm
160
LET = 38 MeVcm2/mg; d= 279 µm
140
120
100
80
60
-30
-25
-20
-15
-10
-5
0
Gate voltage (V)
Fig. 6-1: SOA in terms of (negative) Gate voltage (UGS) and Drain voltage (UDS) for the “Standard”
technology of BUY25CS Family. Results show no “FAIL” at full UDS of 260 V for UGS = 0 V to -15 V. At
LET = 38 MeVcm2/mg, no FAIL was recorded to UGS = -25 V.
8. CONCLUSION
As a typical result, Fig. 6-1 shows that SEB and SEGR fails do not occur at
negative gate voltages UGS = 0 V to -15 V for ion beam parameters given in
Tab. 5-1.
Additionally, for beam parameters B in Tab. 5-1 (i.e. LET = 38 MeVcm2/mg and
279 µm of projected range), a “PASS” – UGS of -25 V is obtained at full UDS of
260 V, which shows a significant decrease of SEE sensitivity at lower LET despite
the much longer penetration length.
10