Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
IRRADIATION TEST REPORT: 1544TR10
Total Induced Dose Characterization of Power MOSFETs
**BUY25CS45B**
Dr. Martin Göllner
IFAG PMM RFS D HIR
Dr. Bernd Eisener
IFAG PMM RFS D HIR
Table of Contents
1
SCOPE
2
2
IRRADIATION FACILITY
2
3
3.1
3.2
3.3
EXPERIMENTAL DETAILS
Sample Placement and Sample Size
Irradiation Conditions
Pre- and Post-Irradiation Tests
3
3
3
3
4
RADIATION EXPOSURE AND TEST SEQUENCE
4
5
TEST RESULTS
4
6
SUMMARY
6
1
Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
1. SCOPE
This Test Report describes Total Induced Dose (TID) tests and results of
radiation-hardened power MOSFETs from Infineon Technologies, types
BUY25CS45B, in accordance to ESCC Basic Spec 22900.
Tests have been performed at the facilities Gammacell 1 of Helmholtz-Center,
Department of Radiation Sciences, Munich-Neuherberg, Germany, week 3, 2016.
2 IRRADIATION FACILITIES
The Co60 Source “GAMMACELL 1” is a facility at the Helmholtz-Centre,
Department of Radiation Sciences, Munich-Neuherberg, Germany.
Dose rate varies by +/-20 % within the irradiation chamber. However, sample
placement is such that position-dependent dose rate variation is from 85 % to
110 %, therefore, stays within +/-15 % of nominal (Fig. 1)
1
2
3
4
Fig. 1: Gamma
intensity within
Co60 irradiation
chamber. Samples
are positioned in
levels 1-4 at
defined locations.
2
Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
3. EXPERIMENTAL DETAILS
3.1 Sample Placement and Sample Size
Tab. 1 shows the individual placement of the devices and the local radiation
exposure. The dies are mounted on a PCB.
3.2 Irradiation Conditions
Dose rate:
72,4 Gy/h (Jan 2016, see note 1)
TID:
>1000 Gy on all parts (see note 2)
Bias:
C1: UGS= +20 V; UDS = 0 V
C2: UGS= - 20 V; UDS = 0 V
C3: UGS= 0 V; UDS = +250 V
Notes:
1. Dose rate performance of the source is updated monthly and recorded in the test
report.
2. Position-dependence of dose rate is accounted for to achieve target dose on all
parts.
3.3 Pre- and Post-Irradiation Tests
The following parameters will be measured for test sample type BUY25CS45B:
IDSS(200 V),
IGSS(+/-20 V),
RDSON(29 A, Ugs=10 V),
VSD(45 A),
Vgs(th)(1 mA),
BVDSS (0.25 mA).
3
Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
4. RADIATION EXPOSURE AND TEST SEQUENCE
Irradiation- anneal- and characterization steps according to the FLOW CHART
FOR QUALIFICATION TESTING of Basic Specifications ESCC22900.
1. Sample serialization
2. Electrical pre-test according to 3.3
3. Irradiation with a dose rate of 72,4 Gy/h for a dose of >1000Gy, in one
irradiation step,
4. Transport of samples, cooled to -23°C from irradiation site to electrical
characterization site.
5. Parameter measurements according to 3.3
6. Room temperature anneal for 24 hours under same bias conditions as
during TID, followed by parameter measurements according to 3.3
7. Accelerated aging under same bias conditions as during TID: 168 hours at
100°C.
8. Electrical post-rad/post anneal test, according to 3.3
5. TEST RESULTS
In the following, each of the electrically parameters listed in 3.3 is plotted for
four points of the testing sequence (see Fig.2), i.e.
1. Prior to irradiation (pre-rad)
2. Post-irradiation (post-rad 1000Gy)
3. Posterior to room-temperature anneal of 24 hours under same bias
conditions as during TID (anneal 24h)
4. Posterior to 168 hours of anneal at 100°C under same bias conditions as
during TID (anneal 168h)
Four groups of graphs are given coded by line-color (see Table 1):
1.
2.
3.
4.
Reference samples
C1: UGS= +20 V; UDS = 0 V
C2: UGS= - 20 V; UDS = 0 V
C3: UGS= 0 V; UDS = +250 V
(black)
(green)
(red)
(blue)
4
Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
BUY25CS45B / L5471A / PCB
Ref/C1/C2/C3 {5/8/8/8}
Ref/C1/C2/C3 {5/8/8/8}
700
3.0
600
500
3:IGSS20 [pA]
2:VGSTH [V]
2.8
2.6
400
300
200
2.4
100
2.2
0
0
500
1000
1500
0
500
1000
test duration [h]
1500
test duration [h]
Ref/C1/C2/C3 {5/8/8/8}
Ref/C1/C2/C3 {5/8/8/8}
1.2
10000
1.0
6:IDSS80% [nA]
4:IGSS-20 [nA]
1000
0.8
0.6
100
10
0.4
0.2
1
0
500
1000
1500
0
500
test duration [h]
Ref/C1/C2/C3 {5/8/8/8}
1500
Ref/C1/C2/C3 {5/8/8/8}
295
46
45
8:Ron29A [mOhm]
290
7:BVDSS [V]
1000
test duration [h]
285
280
275
44
43
42
41
270
40
0
500
1000
1500
0
test duration [h]
500
1000
1500
test duration [h]
Ref/C1/C2/C3 {5/8/8/8}
8:VSD45A [V]
1.15
1.14
1.13
1.12
0
500
1000
1500
test duration [h]
Radio Frequency & Sensors
L5471A 2016-02-08
-D1-
IFAG PMM RFS D HIR
Fig. 2: Plot of TID test results for BUY25CS45B
5
Total Induced Dose Test on Infineon Rad-Hard MOSFETs Type BUY25CS45B
February 8th, 2016
6. SUMMARY
SN
FE Wafer
Lot
Wafer
1544AK#115
1544AK#116
1544AK#117
1544AK#118
1544AK#119
1544AK#120
1544AK#121
1544AK#122
1544AK#123
1544AK#124
1544AK#125
1544AK#126
1544AK#127
1544AK#128
1544AK#129
1544AK#130
1544AK#131
1544AK#132
1544AK#133
1544AK#134
1544AK#135
1544AK#136
1544AK#137
1544AK#138
1544AK#139
1544AK#140
1544AK#141
1544AK#142
1544AK#143
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
VE519979
09
09
09
09
09
09
10
10
10
10
10
10
12
12
12
12
12
12
13
13
13
13
13
13
13
13
13
13
13
Bias
Condition
VGS
VDS
Level
Intensitiy
[%]
C1
C2
C3
C1
C2
C3
C1
C2
C3
C1
C2
C3
C1
C2
C3
C1
C2
C3
C1
C2
C3
C1
C2
C3
+20
-20
0
+20
-20
0
+20
-20
0
+20
-20
0
+20
-20
0
+20
-20
0
+20
-20
0
+20
-20
0
-
0
0
250
0
0
250
0
0
250
0
0
250
0
0
250
0
0
250
0
0
250
0
0
250
-
3
4
2
3
4
2
3
4
2
3
4
2
3
4
2
3
4
2
3
4
2
3
4
2
-
105
95
105
100-105
90-95
100-105
100
90
105
95-100
85-90
105-110
100
90
110
100-105
90-95
110
105
95
105-110
110
95-100
100-105
-
-
Result
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
pass
reference
reference
reference
reference
reference
Table 1: List of irradiated and unirradiated Devices
6