SHD123622 SHD123622P SHD123622N SHD123622D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4667, REV. - POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 200 Volt Ultra Fast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Max. Average Forward Current IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature IFSM Electrical Characteristics: Characteristics Max. Forward Voltage Drop EAS IAR RthJC TJ Tstg Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition 50% duty cycle, rectangular wave form Common Cathode (N)/Common Anode(P) 50% duty cycle, rectangular wave form Doubler (D) and Single 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 ms limited by TJ max VA=1.5VR Per Package Condition @ 120A, Pulse, TJ = 25 C (per leg) measured at the leads @ 120A, Pulse, TJ = 125 C (per leg) measured at the leads @VR = 45V, Pulse, TJ = 25 C (per leg) @VR = 45V, Pulse, TJ = 125 C (per leg) @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Max. 45 150 Units V A 120 A 1000 A 27 mJ 1.3 A 0.2 -65 to +175 -65 to +175 C/W C C Max. 0.78 Units V 0.71 V 2.4 mA 90 mA 4800 pF 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-Mail Address - [email protected] SHD123622P SHD123622N SHD123622D SENSITRON TECHNICAL DATA DATA SHEET 4667, REV. - Mechanical Dimensions: in inches / mm 1.27 (32.26 1.23 31.24) 0.370 (9.40 0.330 8.38) 0.64 (16.26 0.60 15.24) 0.720 (18.29 0.680 17.27) 1 2 3 0.50(12.70) Min 0.167 (4.24 Dia 0.147 3.73) 0.220 (5.59 0.180 4.57) 3 Places 0.40(10.16) Typ 0.030 (0.762 0.010 0.254) 0.260(6.61) Max Epoxy Shell 0.180 (4.57 0.140 3.55) Heat Sink Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) 103 102 150 °C 125 °C 101 100 °C 100 75 °C 10-1 50 °C 10-2 25 °C 125 °C 0 10 20 30 Reverse Voltage - VR (V) 40 50 Typical Junction Capacitance 25 °C 101 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 0.8 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 175 °C 175 °C 102 5000 4000 3000 2000 1000 0 10 20 30 Reverse Voltage - VR (V) 40 50 Vf Curves Shown are for die only. 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-Mail Address - [email protected] SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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