Protection Device TVS (Transient Voltage Suppressor) ESD128-B1-W0201 Bi-directional, 18 V (AC), 13 V (DC), 0.3 pF, 0201, RoHS and Halogen Free compliant ESD128-B1-W0201 Data Sheet Revision 1.3, 2016-04-06 Final Power Management & Multimarket Edition 2016-04-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD128-B1-W0201 Product Overview 1 Product Overview 1.1 Features • ESD / transient protection of high speed data lines according to: – IEC61000-4-2 (ESD): ±15 kV (air/contact discharge) – IEC61000-4-4 (EFT): ±2 kV / ±40 A(5/50 ns) – IEC61000-4-5 (surge): ±2 A (8/20 µs) Bi-directional working voltage up to: VRWM = ±18 V (AC), ±13 V (DC) Line capacitance: CL = 0.3 pF (typical) at f = 1 MHz Clamping voltage: VCL = 32 V (typical) at ITLP = 16 A with RDYN = 0.85 Ω (typical) Very low reverse current. IR < 1 nA (typical) Minimized clamping overshoot due to extremely low parasitic inductance Small form factor SMD Size 0201 and low profile (0.58 mm x 0.28 mm x 0.15 mm) Bidirectional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package • • • • • • • • Guidelines for optimized PCB design and assembly process available [2] 1.2 • Application Examples ESD Protection of RF signal lines in Near Field Communication (NFC) applications[3] 1.3 Product Description a) Pin configuration b) Schematic diagram Configutation_Schematic_Diagram.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Part Information Type Package Configuration Marking code ESD128-B1-W0201 WLL-2-1 1 line, bi-directional K1) 1) The device does not have any marking or date code on the device backside. The Marking code is on pad side. Final Data Sheet 3 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit 2) Reverse working voltage VRWM ±18 ±133) V ESD (air / contact) discharge4) VESD ±15 kV Peak pulse power5) PPK 53 W Peak pulse current IPP ±2 A Operating temperature range TOP -55 to 125 °C Storage temperature Tstg -65 to 150 °C 5) 1) 2) 3) 4) 5) Device is electrically symmetrical For RF peak voltage (NFC) For DC voltage VESD according to IEC61000-4-2 Stress pulse: 8/20μs current waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 Electrical Characteristics at TA = 25 °C, unless otherwise specified ( )!! %! )* ! +! )#! % ##%# !"!!""!" #$%"&!'!! Figure 3-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Electrical Characteristics at TA = 25 °C, unless otherwise specified Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition VR = 18 V Reverse current IR – <1 30 nA Trigger voltage Vt1 20 22 – V Holding voltage Vh 13 17 21 V IT = 40 mA Unit Note / Test Condition pF VR = 0 V, f = 1 MHz 1) Device is electrically symmetrical Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 3-3 CL Values Min. Typ. Max. 0.15 0.3 0.5 – 0.3 – VR = 0 V, f = 1 GHz ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol 2) Clamping voltage VCL 3) Clamping voltage 2) Dynamic resistance RDYN Values Min. Typ. Max. – 32 – – 18.5 – – 0.85 – Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns IPP = 1 A, tp = 8/20 µs Ω tp = 100 ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 0.6 ns. 3) Stress pulse: 8/20μs current waveform according to IEC61000-4-5 Final Data Sheet 5 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical charateristics diagrams at TA = 25 °C, unless otherwise specified -3 10 10-4 10-5 10-6 -7 10 -8 IR [A] 10 -9 10 10-10 10-11 10-12 -13 10 -14 10 -18 -15 -12 -9 -6 -3 0 3 VR [V] 6 9 12 15 18 12 15 18 Figure 4-1 Reverse leakage current IR = f(VR) 1 0.9 0.8 CL [pF] 0.7 0.6 0.5 0.4 1 MHz 0.3 1 GHz 0.2 0.1 0 -18 -15 -12 -9 -6 -3 0 VR [V] 3 6 9 Figure 4-2 Line capacitance CL = f(VR), f = 1 MHz Final Data Sheet 6 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 140 Scope: 6 GHz, 20 GS/s 120 100 VCL [V] 80 VCL-max-peak = 122 V 60 VCL-30ns-peak = 26 V 40 20 0 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse Scope: 6 GHz, 20 GS/s 0 VCL [V] -25 -50 -75 VCL-max-peak = -124 V -100 VCL-30ns-peak = -26 V -125 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-4 Clamping voltage (ESD): VCL = f(t), 8 kV negative pulse Final Data Sheet 7 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 180 Scope: 6 GHz, 20 GS/s 160 140 VCL-max-peak = 157 V VCL [V] 120 VCL-30ns-peak = 46 V 100 80 60 40 20 0 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-5 Clamping voltage (ESD): VCL = f(t), 15 kV positive pulse 20 Scope: 6 GHz, 20 GS/s 0 -20 VCL [V] -40 -60 -80 -100 VCL-max-peak = -150 V -120 VCL-30ns-peak = -46 V -140 -160 -180 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-6 Clamping voltage (ESD): VCL = f(t), 15 kV negative pulse Final Data Sheet 8 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 10 ESD128-B1-W0201 RDYN RDYN = 0.85 Ω 15 ITLP [A] 10 7.5 5 5 2.5 0 0 -5 -2.5 -10 -15 Equivalent VIEC [kV] 20 -5 RDYN = 0.85 Ω -7.5 -20 -10 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 VTLP [V] Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP) [1] Final Data Sheet 9 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 2.5 2 1.5 1 IPP [A] 0.5 0 -0.5 -1 -1.5 -2 -2.5 -25 -20 -15 -10 -5 0 VCL [V] 5 10 15 20 25 Figure 4-8 Clamping voltage(Surge): IPP = f(VCL) [1] Final Data Sheet 10 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Typical Characteristics Diagrams 0 Insertion Loss (|S21|) [dB] 1 2 3 4 5 6 7 8 9 10 10-2 ESD128-B1-W0201 0.1 1 Frequency [GHz] 10 Figure 4-9 Insertion loss vs. frequency in a 50 Ω system Final Data Sheet 11 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Application Information Application Information Mobile phone Main PCB / Top shell differential antenna Interconnection top/bottom shell “external pads” RF=13.56MHz signal vs. GND<+-18Vp +Vsignal vs. -Vsignal <36V!!! TX+ NFC Module TX/RX section Bottom shell loop+ TX- EMI - LP filter Antenna matching GND RX Loopantenna ~1µH 5 GND loop- Caps should be high voltage type to be save regards the residual ESD peak Mobile phone single ended antenna Interconnection top/bottom shell “external pads” Main PCB / Top shell Bottom shell RF=13.56MHz signal vs. GND<+-18Vp NFC Module TX/RX section TX+ loop TXGND RX EMI- LP filter Antenna matching GND Caps should be high voltage type to be save regards the residual ESD peak ESD 18V_application example.vsd Figure 5-1 Bi-directional ESD / Transient protection for NFC Frontend [3] Final Data Sheet 12 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Package Information 6 Package Information 6.1 WLL-2-1 Top view Bottom view 0.15 ±0.01 0.28 ±0.03 0.58 ±0.03 1 0.2 ±0.02 0.36 (0.16) 2 0.26 ±0.02 SG-WLL-2-1-PO V01 Figure 6-1 WLL-2-1 Package outline (dimension in mm) 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures SG-WLL-2-1-FP V01 Figure 6-2 WLL-2-1 Footprint (see:Recommendation for Printed Circuit Board Assembly[2]) 8 0.68 0.23 2 0.21 0.35 SG-WLL-2-1-TP V02 Figure 6-3 WLL-2-1 Packing (dimension in mm) Marking on pad-side Type code 1 1 1 Type code 1 SG-WLL-2-1-MK V03 Figure 6-4 WLL-2-1 Marking example Table 1-1 “Part Information” on Page 3 Final Data Sheet 13 Revision 1.3, 2016-04-06 ESD128-B1-W0201 References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages http://www.infineon.com/dgdl/?fileId=db3a304344f7b4f9014503db540027c0 [3] Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend Final Data Sheet 8 Revision 1.3, 2016-04-06 ESD128-B1-W0201 Revision History: Rev. 1.2, 2015-09-29 Page or Item Subjects (major changes since previous revision) Revision 1.3, 2016-04-06 All New layout Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 9 Revision 1.3, 2016-04-06 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG