Protection Device TVS (Transient Voltage Suppressor) ESD231-B1-W0201 Bi-directional, 5.5 V, 3.5 pF, 0201, RoHS and Halogen Free compliant ESD231-B1-W0201 Data Sheet Revision 1.1, 2015-10-02 Final Power Management & Multimarket Edition 2015-10-02 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD231-B1-W0201 Product Overview 1 Product Overview 1.1 Features • ESD / transient protection of susceptible I/O lines to: – IEC61000-4-2 (ESD): ±30 kV (air/contact discharge) – IEC61000-4-4 (EFT): ±4 kV / ±80 A(5/50 ns) – IEC61000-4-5 (surge): ±12 A (8/20 µs) Bi-directional working voltage up to: VRWM = ±5.5 V Line capacitance: CL = 3.5 pF (typical) at f = 1 MHz Clamping voltage: VCL = 12 V (typical) at ITLP = 16 A with RDYN = 0.3 Ω (typical) Very low reverse current. IR < 1 nA (typical) Minimized clamping overshoot due to extremely low parasitic inductance Small form factor SMD Size 0201 and low profile (0.58 mm x 0.28 mm x 0.15 mm) Bidirectional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package • • • • • • • • Guidelines for optimized PCB design and assembly process available [2] 1.2 • • • • Application Examples USB 2.0 HA, MIPI, (µ)SD-card (UHS), SIM-card Control ports for DVI, HDMI, Display Port, and Thunderbolt Audio Line, Speaker, Headset, Microphone Protection Human Interface Devices (Keyboard, Touchpad, Buttons) 1.3 Product Description a) Pin configuration b) Schematic diagram Configutation_Schematic_Diagram.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Part Information Type Package Configuration Marking code ESD231-B1-W0201 WLL-2-1 1 line, bi-directional M1) 1) The device does not have any marking or date code on the device backside. The Marking code is on pad side. FinalData Sheet 3 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Rating at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit VRWM ±5.5 V ESD air discharge ESD contact discharge2) VESD ±30 ±30 kV Peak pulse power3) PPK 132 W Peak pulse current IPP 12 A Operating temperature TOP -55 to 125 °C Storage temperature Tstg -65 to 150 °C Reverse working voltage 2) 3) 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) Stress pulse: 8/20μs current waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Table 2-2 Thermal Resistance Parameter Symbol Values Min. 1) Typ. Unit Max. Junction - soldering point RthJS 30 1) For calculation of RthJA please refer to Application Note [3] 077 Thermal Resistance Calculation. FinalData Sheet 4 K/W Revision 1.1, 2015-10-02 ESD231-B1-W0201 Electrical Characteristics at TA = 25 °C, unless otherwise specified 3 Electrical Characteristics at TA = 25 °C, unless otherwise specified Table 3-1 ( )!! %! )* ! +! )#! % ##%# Figure 3-1 Definitions of electrical characteristics !"!!""!" #$%"&!'!! DC Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Trigger voltage Vt1 6.1 9.5 – V Holding voltage Vh 6.1 7.8 12.5 V IR = 10 mA Reverse current IR – – 20 nA VR = 5.5 V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz 1) Device is electrically symmetrical Table 3-2 RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Line capacitance FinalData Sheet Symbol CL Values Min. Typ. Max. 3 3.5 4.1 – 3.2 – 5 VR = 0 V, f = 1 GHz Revision 1.1, 2015-10-02 ESD231-B1-W0201 Electrical Characteristics at TA = 25 °C, unless otherwise specified Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol 2) VCL Clamping voltage Clamping voltage3) Dynamic resistance 2) RDYN Values Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns Min. Typ. Max. – 12 – – 16 – ITLP = 30 A, tp = 100 ns – 8 – IPP = 2 A, tp = 8/20 µs – 10 – IPP = 9 A, tp = 8/20 µs – 0.3 – Ω tp = 100 ns 1) Device is electrically symmetrical 2) Please refer to Application Note AN210[1].TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 0.6 ns. 3) Stress pulse: 8/20μs current waveform according to IEC61000-4-5 FinalData Sheet 6 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical characteristics diagrams at TA = 25°C, unless otherwise specified 10-6 -7 10 10-8 IR [A] 10-9 10-10 10-11 10-12 -13 10 -5 -4 -3 -2 -1 0 VR [V] 1 2 3 4 5 Figure 4-1 Reverse leakage current: IR = f(VR) 4 3.8 CL [pF] 3.6 3.4 1 MHz 3.2 3 2.8 2.6 1 GHz -5 -4 -3 -2 -1 0 VR [V] 1 2 3 4 5 Figure 4-2 Line capacitance: CL = f(VR) FinalData Sheet 7 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 45 Scope: 6 GHz, 20 GS/s VCL [V] 30 VCL-max-peak = 31 V 15 VCL-30ns-peak = 10 V 0 -15 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse 15 Scope: 6 GHz, 20 GS/s VCL [V] 0 -15 VCL-max-peak = -31 V -30 -45 -50 VCL-30ns-peak = -9 V 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-4 Clamping voltage (ESD): VCL = f(t), 8 kV negative pulse FinalData Sheet 8 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 60 Scope: 6 GHz, 20 GS/s VCL [V] 45 VCL-max-peak = 47 V 30 VCL-30ns-peak = 13 V 15 0 -15 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-5 Clamping voltage (ESD): VCL = f(t), 15 kV positive pulse 15 Scope: 6 GHz, 20 GS/s VCL [V] 0 -15 -30 VCL-max-peak = -47 V VCL-30ns-peak = -12 V -45 -60 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-6 Clamping voltage (ESD): VCL = f(t), 15 kV negative pulse FinalData Sheet 9 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 70 35 ESD231-B1-W0201 RDYN 60 30 50 25 40 20 30 15 20 10 10 5 0 0 -10 -5 -20 -10 -30 -15 -40 -20 Equivalent VIEC [kV] ITLP [A] RDYN = 0.3 Ω RDYN = 0.3 Ω -50 -25 -60 -30 -70 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 -35 30 VTLP [V] Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP) [1] FinalData Sheet 10 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 14 12 10 8 6 4 IPP [A] 2 0 -2 -4 -6 -8 -10 -12 -14 -12 -10 -8 -6 -4 -2 0 2 VCL [V] 4 6 8 10 12 Figure 4-8 Clamping voltage (Surge): IPP = f(VCL)[1] FinalData Sheet 11 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Typical Characteristics Diagrams 0 Insertion Loss (|S21|) [dB] 1 2 3 4 5 6 7 8 9 10 10-2 ESD231-B1-W0201 0.1 1 10 Frequency [GHz] Figure 4-9 Insertion loss vs. frequency in a 50 Ω system FinalData Sheet 12 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Package Information 5 Package Information 5.1 WLL-2-1 Top view Bottom view 0.15 ±0.01 0.28 ±0.03 0.58 ±0.03 1 0.2 ±0.02 0.36 (0.16) 2 0.26 ±0.02 SG-WLL-2-1-PO V01 Figure 5-1 WLL-2-1 Package outline (dimension in mm) 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures SG-WLL-2-1-FP V01 Figure 5-2 WLL-2-1 Footprint (dimension in mm) Recommendation for Printed Circuit Board Assembly[2] 8 0.68 0.23 2 0.21 0.35 SG-WLL-2-1-TP V02 Figure 5-3 WLL-2-1 Packing (dimension in mm) Marking on pad-side Type code 1 1 1 Type code 1 SG-WLL-2-1-MK V03 Figure 5-4 WLL-2-1 Marking example Table 1-1 “Part Information” on Page 3 FinalData Sheet 13 Revision 1.1, 2015-10-02 ESD231-B1-W0201 References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages http://www.infineon.com/dgdl/?fileId=db3a304344f7b4f9014503db540027c0 [3] Infineon AG - Application Note AN077: Thermal Resistance Calculation FinalData Sheet 8 Revision 1.1, 2015-10-02 ESD231-B1-W0201 Revision History: Rev. 1.0 2015-07-31 Page or Item Subjects (major changes since previous revision) Revision 1.1, 2015-10-02 All Sales code change from ESD231-B1-CSP0201 to ESD231-B1-W0201 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 FinalData Sheet 9 Revision 1.1, 2015-10-02 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG