SHD114611 SHD114611A SHD114611B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1057, REV. A HERMETIC POWER SCHOTTKY RECTIFIER DESCRIPTION: A 30 VOLT, 120 AMP, HERMETIC POWER SCHOTTKY RECTIFIER IN A SHD-3/3A/3B PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MAX. UNITS PIV 30 Volts MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=100 C) IO 120 Amps MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT (t=10ms, Sine) IFSM 1650 Amps MAXIMUM JUNCTION CAPACITANCE CT 6600 pF 0.38 C/W Top/Tstg -65 to + 150 C SYMBOL MAX. UNITS Vf 0.53 Volts PEAK INVERSE VOLTAGE O (Vr =5V) MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode) MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE R JC ELECTRICAL CHARACTERISTICS CHARACTERISTIC MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 120 Amps) TJ = 25 C 0.43 TJ = 125 C MAXIMUM REVERSE CURRENT (Ir @ 30 V PIV) TJ = 25 C TJ = 125 C Ir 12 600 ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] mA SHD114611 SHD114611A SHD114611B SENSITRON DATA SHEET 1057, REV. A MECHANICAL DIMENSIONS: In Inches / mm .560±.020 .550±.020 (14.0±.508) .410±.010 (10.4±.254) (14.2±.508) .410±.010 .410±.010 (10.4±.254) (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .075 (1.91) Max .200±.010 (5.08 ±.254) Moly Lid .410±.010 (10.4±.254) .015±.005 (.381±.127) Copper Anode .020±.005 R (.508±.127 ) .090 (2.29) Max Alumina Ring .075 (1.91) Max Moly Lid Alumina Ring .020±.005 R (.508±.127 ) Moly Bas e (Cathode) Moly Anode .020±.002 (.508±.051) .060±.010 (1.52±.254) Alumina Ring Moly Base (Cathode) .015±.002 (.381±.051) .060±.010 Moly Bas e SHD-3 .150±.010 (3.81±.254) SHD-3A (1.52±.254) SHD-3B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]