A1357 Datasheet

A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
Features and Benefits
Description
▪ Two-wire output enables reduced wiring costs in
long wire systems
▪ Simultaneous programming of PWM carrier frequency,
quiescent duty cycle (QDC), and sensitivity for system
optimization
▪ Fully differential signal path increases EMC immunity and
reduces output offset drifts
▪ Factory programmed sensitivity temperature coefficient
and quiescent duty cycle drift
▪ Programmability at end-of-line
▪ Pulse width modulated (PWM) current output provides
increased noise and EMC immunity compared to an
analog output
▪ Precise recoverability after temperature cycling
• Duty cycle clamps provide short circuit diagnostic
capabilities
▪ Optional 50% duty cycle calibration test mode at device
power up
▪ Wide ambient temperature range: –40°C to 150°C
▪ Resistant to mechanical stress
The A1357 device is a high precision, programmable two-wire
Hall-effect linear sensor IC with a pulse width modulated
(PWM) current. The A1357 device converts an analog signal
from its internal Hall sensor element to a digitally encoded
PWM signal. The coupled noise immunity of the digitally
encoded PWM is far superior to the noise immunity of an
analog output signal.
The BiCMOS, monolithic circuit inside of the A1357 integrates
a Hall element, precision temperature-compensating circuitry
to reduce the intrinsic sensitivity and offset drift of the Hall
element, a small-signal high-gain amplifier, proprietary
dynamic offset cancellation circuits, and PWM conversion
circuitry. The dynamic offset cancellation circuits reduce the
residual offset voltage of the Hall element that is normally
caused by device overmolding, temperature dependencies,
and thermal stress. The high frequency offset cancellation
(chopping) clock allows for a greater sampling rate, which
increases the accuracy of the output current signal and results
in faster signal processing capability.
The A1357 sensor is provided in a lead (Pb) free 3-pin single
inline package (KB suffix), with 100% matte tin leadframe
plating.
Package: 3-pin SIP (suffix KB)
Not to scale
Functional Block Diagram
VSUPPLY
VCC (and
programming)
PWM Carrier
Generation
Regulator
PWM
Frequency Trim
1
2
2
1
CBYBASS
Chopper
Switches
Amp
Signal
Recovery
Signal
Conditioning
Voltage Controlled
Current Source
Sensitivity
Trim
Temperature
Compensation
% Duty
Cycle
% Duty Cycle
Temperature
Coefficient
GND
A1357-DS
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Selection Guide
Part Number
Packing*
A1357LKB-T
500 pieces per bag
A1357LKBTN-T
4000 pieces per 13-in. reel
*Contact Allegro™ for additional packing options
Absolute Maximum Ratings
Characteristic
Symbol
Notes
Rating
Unit
Forward Supply Voltage
VCC
28
V
Reverse Supply Voltage
VRCC
–18
V
Forward Supply Current
ICC
50
mA
Reverse Supply Current
IRCC
–50
mA
–40 to 150
ºC
165
ºC
–65 to 170
ºC
Operating Ambient Temperature
TA
Maximum Junction Temperature
TJ(max)
Storage Temperature
Tstg
L temperature range
VCC = 0 V
Pin-out Diagram
Terminal List Table
Number
1
2
Name
Function
1
VCC
Input power supply; use bypass capacitor to connect to ground; also
used for programming
2
GND
Ground
3
NC
No connect
3
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2
A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
OPERATING CHARACTERISTICS Valid over full operating temperature range, TA , VCC = 4.5 to 18 V, CBYPASS = 0.1 μF, unless
otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit1
Electrical Characteristics
Supply Voltage2
Supply Current
VCC
4.5
–
18
V
ICC_LOW
–
6
8
mA
ICC_HIGH
12
–
16.5
mA
2
–
–
–
ICC = 18 mA, TA = 25ºC
28
–
–
V
tPO
fpwm = 1 kHz
–
–
5
ms
BWi
Small signal –3 dB, 100 G(P-P) magnetic input
signal, TA = 25 C°
–
400
–
Hz
fC
TA = 25°C
–
200
–
kHz
tr
VCC pin, No CBYPASS or RSENSE, TA = 25 C°
–
6.5
–
mA/μs
tf
VCC pin, No CBYPASS or RSENSE, TA = 25 C°
–
6.5
–
mA/μs
TA = 25 C°
–
2
3
ms
–
2
3.125
ms
–
–
±0.090
%D
DCLP(HIGH)
90
–
95
%D
DCLP(LOW)
5
–
10
%D
Supply Current Ratio
Supply Zener Clamp Voltage
Power-On Time3,4
Internal Bandwidth
Chopping Frequency5
VZsupply
Output Current Characteristics
PWMOUT Rise Time3,4
PWMOUT Fall
Time3,4
Maximum Propagation Delay3,4
tPROP
Response Time3,4
tRESPONSE
Impulse magnetic field of 300 G, fpwm = 1 kHz,
slew rate < 120 G/ms, TA = 25 C°
Duty Cycle Jitter3,4,6
JitterPWM
Measured over 1000 output PWM clock periods,
3 sigma values, Sens = 60 m% / G, TA = 25 C°
Clamp Duty Cycle
Pre-Programming Target7
Pre-Programming Quiescent Current
Duty Cycle
D(Q)PRE
B = 0 G, TA = 25°C
–
50
–
%D
Pre-Programming Sensitivity
SensPRE
TA = 25°C
–
25
–
(m% D)/G
Pre-Programming PWMOUT Carrier
Frequency
fPWMPRE
TA = 25°C
–
1.5
–
kHz
Quiescent Current Duty Cycle Programming
Initial Quiescent Current Duty Cycle
D(Q)init
B = 0 G, TA = 25°C
–
D(Q)PRE
–
%D
Guaranteed Quiescent Current Duty
Cycle Output Range8
D(Q)
B = 0 G, TA = 25°C
40
–
60
%D
–
9
–
bit
Quiescent Current Duty Cycle
Programming Bits
Average Quiescent Current Duty Cycle
Step Size9,10
StepD(Q)
TA = 25°C
0.091
0.103
0.115
%D
Quiescent Current Duty Cycle
Programming Resolution11
ErrPGD(Q)
TA = 25°C
–
StepD(Q)
× ±0. 5
–
%D
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
OPERATING CHARACTERISTICS (continued) Valid over full operating temperature range, TA , VCC = 4.5 to 18 V,
CBYPASS = 0.1 μF, unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Sensitivity Programming
Initial Sensitivity
Sensitivity Programming Bits
Guaranteed Sensitivity Range
Average Sensitivity Step Size9,10
Sensitivity Programming Resolution11
Sensinit
TA = 25°C
–
SensPRE
–
(% D)/G
Range_
Selection
TA = 25°C
–
1
–
bit
Fine
TA = 25°C
–
8
–
bit
SensRange1 TA = 25°C
35
–
70
(m% D)/G
SensRange2 TA = 25°C
70
–
145
(m% D)/G
StepSENS1
TA = 25°C
215
300
375
(μ% D)/G
StepSENS2
TA = 25°C
430
600
750
(μ% D)/G
–
(μ% D)/G
fPWMPRE
–
Hz
StepSENS
ErrPGSENS
TA = 25°C
–
fPWMinit
TA = 25°C
–
fPWM
TA = 25°C
0.9
1
1.1
kHz
–
4
–
bit
54
70
Hz
–
Hz
× ±0. 5
Carrier Frequency Programming
Initial Carrier Frequency
Carrier Frequency Programming Range
Carrier Frequency Programming Bits
Average Carrier Frequency Step
Size9,10
Carrier Frequency Programming
Resolution11
StepfPWM
ErrPGfPWM
TA = 25°C
TA = 25°C
38
–
StepfPWM
× ±0. 5
Calibration Test Mode
Calibration Test Mode Selection Bit
Calibration Test Mode
Duration4
Output Duty Cycle During Calibration
Mode4
–
1
–
bit
45
50
55
ms
DCAL
49
50
51
%D
LOCK
–
1
–
bit
TA = 150°C
–
0.11
–
%/°C
TA = 150°C
–
< ±3
–
%
–
< ±1
–
%
tCAL
fPWM = 1 kHz
Lock Bit Programming
Overall Programming Lock Bit
Factory Programmed Sensitivity Temperature Coefficient And Drift Characteristics
Sensitivity Temperature Coefficient12
SensTC_
Sensitivity Drift Through Temperature
Range13
ΔSensTC
Sensitivity Drift Due to Package
Hysteresis3
ΔSensPKG TA = 150°C, after temperature cycling
NdFeB
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
OPERATING CHARACTERISTICS (continued) Valid over full operating temperature range, TA , VCC = 4.5 to 18 V,
CBYPASS = 0.1 μF, unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Factory Programmed Quiescent Current Duty Cycle Drift
Quiescent Current Duty Cycle
Temperature Coefficient12
DTC(Q)
TA = 150°C
–
0
–
(% D)/°C
Quiescent Current Duty Cycle Drift
Through Temperature Range14
ΔD(Q)
Sens = SensPRE, TA = 150°C
–
< ±0.35
–
%D
LinERR
–
< ±1.5
–
%
SymERR
–
< ±1.5
–
%
Error Components
Linearity Sensitivity Error
Symmetry Sensitivity Error
11
G (gauss) = 0.1 mT (millitesla).
Voltage is the voltage drop between device supply and ground pins. It does not include a drop through a sense resistor.
3See Characteristic Definitions section.
4Guaranteed by design only. Characterized but not tested in production.
5f varies up to approximately ±20% through the full operating ambient temperature range, T , and process.
C
A
6Jitter is dependent on the sensitivity of the device.
7Raw device characteristic values before any programming.
8D (max) is the value available with all programming fuses blown (maximum programming code set). The D
(Q)
(Q) range is the total range from D(Q)(min)
up to and including D(Q)(max). See Characteristic Definitions section.
9Step size is larger than required, in order to provide for manufacturing spread. See Characteristic Definitions section.
10Non-ideal behavior in the programming DAC can cause the step size at each significant bit rollover code to be greater than twice the maximum
specified value of StepD(Q) , StepSENS , or StepfPWM .
11Overall programming value accuracy. See Characteristic Definitions section.
12Programmed at 150°C and calculated relative to 25°C.
13Sensitivity drift from expected value at T after programming SENS . See Characteristic Definitions section.
A
TC
14D
(Q) drift from expected value at TA after programming DTC(Q).
2Supply
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic
Symbol
RθJA
Package Thermal Resistance
Test Conditions*
Value Units
1-layer PCB with copper limited to solder pads
177
ºC/W
*Additional thermal data available on the Allegro Web site.
Power Derating Curve
20
Maximum Allowable VCC (V)
VCC(max)
15
10
5
0
VCC(min)
20
40
60
80
100
120
140
160
Ambient Temperature, TA (ºC)
Power Dissipation versus Ambient Temperature
900
Power Dissipation, PD (mW)
800
700
600
500
400
300
200
100
0
20
40
60
80
100
120
140
160
Ambient Temperature, TA (ºC)
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
6
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Characteristic Definitions
Power-On Time When the supply is ramped to its operating
voltage, the device requires a finite time to power its internal
components before supplying a valid PWM output duty-cycle.
Power-On Time, tPO, is defined as the time it takes for the output
voltage to settle within ±10% of its steady state value after the
power supply has reached its minimum specified operating voltage, VCC(min). (See figure 1.)
Average Quiescent Current Duty Cycle Step Size The
Average Quiescent Current Duty Cycle Step Size, StepD(Q) , for a
single device is determined using the following calculation:
StepD(Q) =
D(Q)(max) – D(Q)(min)
,
2n –1
(1)
where:
Propagation Delay Traveling time of signal from input Hall
plate to output stage of device. (See figure 2.)
n is the number of available programming bits in the trim range,
Response Time The time interval, tRESPONSE , between
a) when the applied magnetic field reaches 90% of its final value,
and b) when the sensor IC reaches 90% of its output corresponding to the applied magnetic field. (See figure 2.)
D(Q)(max) is the maximum reached quiescent duty cycle, and
2n – 1 is the value of programming steps in the range,
D(Q)(min) is minimum reached quiescent duty cycle.
PWMOUT Rise Time The time, tr , elapsed between 10% and
90% of the rising signal value when output current switches from
low to high states.
PWMOUT Fall Time The time, tf , elapsed between 90% and
10% of the falling signal value when output current switches
from high to low states.
Quiescent Current Duty Cycle In the quiescent state (no
significant magnetic field: B = 0 G), the Quiescent Current Duty
Cycle, D(Q), equals a specific programmed duty cycle throughout
the entire operating ranges of VCC and ambient temperature, TA.
Guaranteed Quiescent Current Duty Cycle Range The
Quiescent Current Duty Cycle, D(Q), can be programmed around
its nominal value of 50% D, within the Guaranteed Quiescent
Duty Cycle Range limits: D(Q)(min) and D(Q)(max). The available
guaranteed programming range for D(Q) falls within the distributions of the minimum and the maximum programming code for
setting D(Q). (See figure 3.)
ADC – DC corresponds to the A field
BDC – DC corresponds to the B field
CDC – DC corresponds to the 0.9 × C field
1 ms
0.9 × C
C
B-field
A
B
Time
ADC
BDC
CDC
Icc
Propagation
Delay
Response
Time
Figure 2. Definitions of Propagation Delay and Response Time
VCC
Guaranteed D(Q)
Programming
Range
VCC(min)
Time
ICC
First valid duty cycle
tPO
Figure 1. Definition of Power-On Time
Time
Min Code D(Q)
Distribution
Max Code D(Q)
Distribution
Initial D(Q)
Distribution
D(Q)(min)
D(Q)(max)
Figure 3. Definition of Guaranteed Quiescent Voltage Output Range
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115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
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A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
Quiescent Current Duty Cycle Output Programming
Resolution The programming resolution for any device is half
of its programming step size. Therefore, the typical programming
resolution will be:
ErrPGD(Q)(typ) = 0.5 × StepD(Q)(typ)
.
(2)
Quiescent Duty Cycle Output Drift through Temperature Range Due to internal component tolerances and thermal
considerations, the Quiescent Duty Cycle Temperature Coefficient, DTC(Q), may drift from its nominal value over the operating ambient temperature, TA. For purposes of specification, the
Quiescent Duty Cycle Output Drift Through Temperature Range,
∆D(Q) (% D), is defined as:
∆D(Q) = D(Q)(TA) – D(Q)(25°C)
,
(3)
where D(Q)(TA) is the quiescent duty cycle measured at TA and
D(Q)(25°C) is the quiescent duty cycle measured at 25°C.
Sensitivity The presence of a south polarity magnetic field,
perpendicular to the branded surface of the package face,
increases the current duty cycle from its quiescent value toward
the maximum duty cycle limit. The amount of the current duty
cycle increase is proportional to the magnitude of the magnetic
field applied. Conversely, the application of a north polarity
field decreases the current duty cycle from its quiescent value.
This proportionality is specified as the magnetic Sensitivity, Sens ((% D)/G), of the device, and it is defined for bipolar
devices as:
D(BPOS) – D(BNEG)
Sens =
,
(4)
BPOS – BNEG
and for unipolar devices as:
D(BPOS) – D(Q)
Sens =
BPOS
,
(5)
where BPOS and BNEG are two magnetic fields with opposite
polarities.
Guaranteed Sensitivity Range The magnetic Sensitivity can
be programmed from its initial value, Sensinit , to a value within
the Guaranteed Sensitivity Range limits: SensRange(min) and
SensRange(max).
Average Sensitivity Step Size Refer to the Average Quiescent Current Duty Cycle Step Size section for a conceptual
explanation.
Sensitivity Programming Resolution Refer to the Quiescent Current Duty Cycle Programming Resolution section for a
conceptual explanation.
Carrier Frequency Target The PWMOUT signal Carrier
Frequency Programming Range, fPWM, can be programmed to its
typical value of 1 kHz.
Average Carrier Frequency Step Size Refer to the Average
Quiescent Current Duty Cycle Step Size section for a conceptual
explanation.
Carrier Frequency Programming Resolution Refer to the
Quiescent Durrent Duty Cycle Programming Resolution section
for a conceptual explanation.
Sensitivity Temperature Coefficient Device sensitivity changes as temperature changes, with respect to its programmed Sensitivity Temperature Coefficient, SensTC. SensTC
is programmed at 150°C, and calculated relative to the nominal
sensitivity programming temperature of 25°C. SensTC (%/°C) is
defined as:
 1 
SensT2 – SensT1

SensTC = 
100% 
×
SensT1
 T2–T1

,
(6)
where T1 is the nominal Sens programming temperature of 25°C,
and T2 is the programming temperature of 150°C. The expected
value of Sens through the full ambient temperature range,
SensEXPECTED(TA), is defined as:
SensEXPECTED(TA) =
SensT1× [100% +SensTC (TA –T1)]
100 %
.
(7)
SensEXPECTED (TA) should be calculated using the actual measured
values of SensT1 and SensTC rather than programming target
values.
Sensitivity Drift Through Temperature Range Second
order Sensitivity Temperature Coefficient effects cause the magnetic Sensitivity, Sens, to drift from its expected value through
the operating ambient temperature range, TA. For purposes of
specification, the Sensitivity Drift Through Temperature Range,
∆SensTC , is defined as:
∆SensTC =
SensTA – SensEXPECTED(TA)
SensEXPECTED(TA)
× 100% .
(8)
Sensitivity Drift Due to Package Hysteresis Package
stress and relaxation can cause the device Sensitivity at TA =
25°C to change during and after temperature cycling.
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115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
For purposes of specification, the Sensitivity Drift Due to Package Hysteresis, ∆SensPKG, is defined as:
∆SensPKG =
Sens(25°C)2 – Sens(25°C)1
× 100%
Sens(25°C)1
,
(9)
where Sens(25°C)1 is the programmed value of sensitivity at TA =
25°C, and Sens(25°C)2 is the value of sensitivity at TA = 25°C,
after temperature cycling TA up to 150°C, down to –40°C, and
back to up 25°C.
Linearity Sensitivity Error The A1357 is designed to provide
a linear current output in response to a ramping applied magnetic
field. Consider two magnetic fields, B1 and B2. Ideally, the sensitivity of a device is the same for both fields, for a given supply
voltage and temperature. Linearity error is present when there is a
difference between the sensitivities measured at B1 and B2.
Linearity Sensitivity Error is calculated separately for the positive
(LinERRPOS) and negative (LinERRNEG ) applied magnetic fields.
Linearity error (%) is measured and defined as:
 SensBPOS2 
 × 100%
LinERRPOS = 1–
 SensBPOS1 
,
 SensBNEG2
 × 100%
LinERRNEG = 1–
 SensBNEG1
,
(10)
where:
|D(Bx) – D(Q)|
SensBx =
Bx
.
2 × BPOS1 and BNEG2 = 2 × BNEG1.
Then:
LinERR = max( LinERRPOS , LinERRNEG)
and BPOSx and BNEGx are positive and negative magnetic fields,
with respect to the quiescent current duty cycle such that BPOS2 =
(12)
Note that unipolar devices only have positive linearity error
(LinERRPOS).
Symmetry Sensitivity Error The magnetic sensitivity of the
A1357 device is constant for any two applied magnetic fields of
equal magnitude and opposite polarities. Symmetry Sensitivity
Error, SymERR (%), is measured and defined as:
 SensBPOS 
 × 100% ,
SymERR = 1–
(13)
 SensBNEG 
where SensBx is as defined in equation 11, and BPOS and BNEG
are positive and negative magnetic fields such that |BPOS| =
|BNEG|. Note that the Symmetry Sensitivity Error specification is
valid only for bipolar devices.
Duty Cycle Jitter The duty cycle of the PWMOUT output may
vary slightly over time despite the presence of a constant applied
magnetic field and a constant Carrier Frequency, fPWM , for the
PWMOUT signal. This phenomenon is known as jitter, and is
defined as:
1
JitterPWM =
n
(11)
.
n
i=1
DBi ± 3 S
,
(14)
where DB1 ,…, DBn are the sampled duty cycles in a constant
applied magnetic field, B, measured over 1000 PWM clock periods, and JitterPWM is given in % D.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
9
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Typical Application Circuit
The current switching performed by the Hall sensor IC can be
observed as voltage switching. To do so, place a sense resistor,
RSENSE , between the supply and the A1357 VCC pin (see figure
4), or between the A1357 GND pin and ground (figure 5). There
is an advantage to putting the sense resistor between the supply
and the A1357 VCC pin, because the resistor can then provide
additional device protection from supply transients.
When specifying value of the RSENSE and the applied supply voltage in the application, the following equation must be applied, in
order to provide enough voltage to allow the A1357 to power-up:
VSUPPLY > RSENSE × ICC_HIGH(max) + VCC(min) ,
where ICC(max) is the maximum A1357 supply current and
(15)
VCC(min) is the A1357 minimum supply voltage.
Substituting into equation 15:
12 V > RSENSE × 16.5 mA + 4.5 V ,
therefore:
RSENSE ≤ (12 – 4.5) V / 16.5 mA
≤ 454 Ω .
It can be seen that RSENSE is proportional to VSUPPLY . The higher
the value of RSENSE , the higher the application supply voltage
required.
The recommended minimum CBYPASS value is 0.01 μF.
RSENSE
1
VCC
VSUPPLY
1
VCC
VSUPPLY
A1357
CBYPASS
0.1 μF
A1357
CBYPASS
GND
0.1 μF
GND
2
2
RSENSE
Figure 4. High-side PWM voltage sensing configuration
Figure 5. Low-side PWM voltage sensing configuration
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
10
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Programming Guidelines
Overview
Programming is accomplished by sending a series of input voltage pulses serially through the VCC pin of the device. A unique
combination of different voltage level pulses controls the internal
programming logic of the device to select a programmable
parameter and change its value. There are three voltage levels
that must be taken into account when programming. These levels
are referred to as high, VP(HIGH) , mid, VP(M ID), and low, VP(LOW) .
Definition of Terms
Register The section of the programming logic that controls the
choice of programmable modes and parameters.
Bit Field The internal fuses unique to each register, represented
as a binary number. Changing the bit field settings of a particular
register causes its programmable parameter to change, based on
the internal programming logic.
Key A series of mid-level voltage pulses used to select a register,
with a value expressed as the decimal equivalent of the binary
value. The LSB of a register is denoted as key 1, or bit 0.
The A1357 features Try mode, Blow mode and Lock mode:
• In Try mode, the value of multiple programmable parameters
may be set and measured simultaneously. The parameter values
are stored temporarily, and reset after cycling the supply voltage.
Code The number used to identify the combination of fuses
activated in a bit field, expressed as the decimal equivalent of the
binary value. The LSB of a bit field is denoted as code 1, or bit 0.
• In Blow mode, the value of a single programmable parameter
may be set and measured, and then permanently set by blowing
solid-state fuses internal to the device. Additional parameters
may be blown sequentially. This mode also is used for blowing the device-level fuse (when Lock mode is enabled), which
permanently blocks the further programming of all parameters.
Addressing Increasing the bit field code of a selected register
by serially applying a pulse train through the VCC pin of the
device. Each parameter can be measured during the addressing
process, but the internal fuses must be blown before the programming code (and parameter value) becomes permanent.
• Lock mode prevents all future programming of the device. This
is accomplished by blowing a special fuse using Blow mode.
Fuse Blowing Applying a high voltage pulse of sufficient
duration to permanently set an addressed bit by blowing a fuse
internal to the device. After a bit (fuse) has been blown, it cannot
be reset.
The programming sequence is designed to help prevent the
device from being programmed accidentally; for example, as a
result of noise on the supply line. Although any programmable
variable power supply can be used to generate the pulse waveforms, Allegro highly recommends using the Allegro Sensor
Evaluation Kit, available on the Allegro website On-line Store.
The manual for that kit is available for download free of charge,
and provides additional information on programming this device.
Blow Pulse A high voltage pulse of sufficient duration to blow
the addressed fuse.
Cycling the Supply Powering-down, and then powering-up the
supply voltage. Cycling the supply is used to clear the programming settings in Try mode.
Programming Pulse Requirements, Protocol at TA = 25 °C
Characteristic
Programming
Voltage
Symbol
Notes
VP(LOW)
VP(MID)
Measured at the VCC pin.
VP(HIGH)
Programming
Current
IP
tLOW
Pulse Width
Minimum supply current required to ensure proper fuse blowing. In addition, a
minimum capacitance, CBLOW = 0.1 μF, must be connected between the supply and
GND pins during programming to provide the current necessary for fuse blowing.
The blowing capacitor should be removed and the load capacitance used for properly
programming duty cycle measurements.
Min.
Typ.
Max.
Unit
4.5
5
5.5
V
13
15
16
V
26
27
28
V
300
–
–
mA
Duration of VP(LOW) for separating VP(MID) and VP(HIGH) pulses.
40
–
–
μs
tACTIVE
Duration of VP(MID) and VP(HIGH) pulses for register selection or bit field addressing.
40
–
–
μs
tBLOW
Duration of VP(HIGH) pulses for fuse blowing.
40
–
–
μs
Pulse Rise Time
tPr
Rise time required for transitions from VP(LOW) to either VP(MID) or VP(HIGH).
5
–
100
μs
Pulse Fall Time
tPf
Fall time required for transitions from VP(HIGH) to either VP(MID) or VP(LOW).
5
–
100
μs
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11
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Programming Procedures
• Register Mode 2:
Try mode
And there are four registers that select among the four programmable parameters:
• Register 1:
Sensitivity, Sens
• Register 2:
Quiescent Current Duty Cycle, D(Q)
• Register 3:
Pulse width modulated carrier frequency , fPWM
• Register 6:
Lock (device locking)
Fuse Blowing
After the required code is found for a given parameter, its value
can be set permanently by blowing individual fuses in the appropriate register bit field. Blowing is accomplished by applying a
VP(HIGH) pulse, called a blow pulse, of sufficient duration at the
VP(HIGH) level to permanently set an addressed bit by blowing a
fuse internal to the device. Due to power requirements, the fuse
for each bit in the bit field must be blown individually. To accomplish this, the code representing the required parameter value
must be translated to a binary number. For example, as shown
in figure 8, decimal code 5 is equivalent to the binary number
101. Therefore bit 2 (code 4) must be addressed and blown, the
device power supply cycled, and then bit 0 (code 1) addressed
V+
V+
VP(HIGH)
VP(HIGH)
VP(MID)
VP(MID)
Code 2n – 1
Blow and Lock modes
Code 2n – 2
• Register Mode 1:
When addressing the bit field, the quantity of VP(MID) pulses
is represented by a decimal number called a code. Addressing
activates the corresponding fuse locations in the given bit field
by increasing the binary value of an internal DAC. The value of
the bit field (and code) increases by one with the falling edge
of each VP(MID) pulse, up to the maximum possible code (see
the Programming Logic table). As the value of the bit field code
increases, the value of the programmable parameter changes.
Measurements can be taken after each pulse to determine if the
required result for the programmable parameter has been reached.
Cycling the supply voltage resets all the locations in the bit field
that have unblown fuses to their initial states.
Code 2
The A1357 has two registers that select among the three programmable modes:
Bit Field Addressing
After a programmable parameter has been selected, a VP(HIGH)
pulse transitions the programming logic into the bit field addressing state. Applying a series of VP(MID) pulses to the VCC pin of
the device, as shown in figure 7, increases by one the bit field of
the selected parameter.
Code 1
Mode and Parameter Selection
Each programmable mode and parameter can be accessed through
specific registers. To select a register, a sequence of voltage
pulses consisting of a VP(HIGH) pulse, a series of VP(MID) pulses,
and a VP(HIGH) pulse (with no VCC supply interruptions) must be
applied serially to the supply pin. The quantity of VP(MID) pulses
is called the key, and uniquely identifies each register. The pulse
train used for selection of the first register, key 1, is shown in
figure 6.
VP(LOW)
VP(LOW)
tLOW
0
tACTIVE
Figure 6. Parameter selection pulse train. This shows the sequence for
selecting the register corresponding to key 1, indicated by a single VP(MID)
pulse.
0
Figure 7. Bit field addressing pulse train. Addressing the bit field by
increasing the code causes the programmable parameter value to change.
The number of bits available for a given programming code, n, varies
among parameters; for example, the bit field for D(Q) has 8 bits available,
which allows 255 separate codes to be used.
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12
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
and blown. An appropriate sequence for blowing code 5 is shown
in figure 9. The order of blowing bits, however, is not important.
Blowing bit 0 first, and then bit 2 is acceptable.
Note: After blowing, the programming is not reversible, even
after cycling the supply power. Although a register bit field fuse
cannot be reset after it is blown, additional bits within the same
register can be blown at any time until the device is locked. For
example, if bit 1 (binary 10) has been blown, it is still possible to
blow bit 0. The end result would be binary 11 (decimal code 3).
• The blowing capacitor, CBLOW , must be replaced in the final
application with the load capacitance, CL , for proper operation.
• The power supply used for programming must be capable of
delivering at least 26 V and 300 mA.
• Be careful to observe the tLOW delay time before powering
down the device after blowing each bit.
Locking the Device
After the required code for each parameter is programmed, the
device can be locked to prevent further programming of any
parameters.
• The following programming order is recommended:
1. fPWM
2. Sens
Additional Guidelines
The additional guidelines presented in this section should be followed to ensure the proper behavior of these devices:
3. D(Q)
4. Lock the device (only after all other parameters have been
programmed and validated, because this prevents any further
programming of the device)
• A 0.1 μF blowing capacitor, CBLOW , must be mounted between
the VCC pin and the GND pin during programming, to ensure
enough current is available to blow fuses.
Bit Field Selection
Address Code Format
(Decimal Equivalent)
Code 5
Code in Binary
(Binary)
1 0 1
Fuse Blowing
Target Bits
Fuse Blowing
Address Code Format
Bit 2
• The application load capacitance, CL , should be used when
measuring the duty cycle during programming. The blowing
capacitor, CBLOW , should be removed during measurement and
should only be applied when blowing fuses.
Programming Modes
Try Mode Try mode allows multiple programmable parameters
to be tested simultaneously without permanently setting any
values. In this mode, each VP(HIGH) pulse will indefinitely loop
the programming logic through the mode, register, and bit field
selection states. There must be no interruptions in the VCC supply.
After powering the VCC supply, select mode key 2, followed
by the parameter register, and then address its bit field. When
addressing the bit field, each VP(MID) pulse increases the value
of the parameter register by one, up to the maximum possible
code (see Programming Logic section). The addressed parameter
value is stored in the device even after the programming drive
voltage is removed from the VCC pin, allowing its value to be
measured. To test an additional programmable parameter in
Bit 0
Code 4
Code 1
(Decimal Equivalents)
Figure 8. Example of code 5 broken into its binary components, which are
code 4 and code 1.
V+
VP(HIGH)
VP(MID)
VP(LOW)
0
Cycle VCC
supply
1
Mode
Selection
(Key 1)
1
2
Parameter
Selection
(Key 2)
1
2
3
Addressing
Bitfield 2
(Code 4)
4
Blow
Code 4
tBLOW
tLow
Cycle VCC
supply
Figure 9. Example of Blow Mode programming pulses applied to the VCC pin. In this example, D(Q)
(Parameter Key 2) is addressed to code 4 (i.e bit 2) and its value is permanently blown.
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13
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
conjunction with the original, enter an additional VP(HIGH) pulse
on the VCC pin to reenter the parameter selection field. Select a
different parameter register, and address its bit field, without any
supply interruptions. Both parameter values will be stored and
can be measured after removing the programming drive voltage.
Multiple programming combinations can be tested to achieve
optimal application accuracy. See figure 10 for an example of the
Try mode pulse train.
Single parameters can be still addressed in the Blow mode before
fuse blowing. Simultaneous addressing of multiple parameters,
as in Try mode, is not possible. After powering the VCC supply,
select the desired parameter register and address its bit field.
When addressing the bit field, each VP(MID) pulse increases
the value of the parameter register by one, up to the maximum
possible code (see Programming Logic table). The addressed
parameter value is stored in the device even after the programming drive voltage is removed from the VCC pin, allowing its
value to be measured. It is not possible to decrease the value of
the register without resetting the parameter bit field. To reset the
bit field, and thus the value of the programmable parameter, cycle
the supply, VCC, voltage.
Registers can be addressed and re-addressed an indefinite number
of times in any order. After the required code is found for each
register, cycle the supply and blow the bit field using Blow mode.
Blow Mode After the required value of the programmable
parameter is found using Try mode, the corresponding code
should be blown to make the value permanent. To do this, first
select Blow mode as key 1, then the required parameter register,
and address and blow each required bit separately (as described
in the Fuse Blowing section). The supply must be cycled between
blowing each bit of a given code. After a bit is blown, cycling the
supply will not reset its value.
It is possible to switch between Try and Blow modes in that, after
individual programmable parameters have been blown in Blow
mode, other parameters can be still tested in Try mode.
Lock Mode To lock the device, first select Lock mode, then
address the Lock bit and apply a blow pulse with CBLOW in place.
After locking the device, no future programming of any parameter is possible.
V+
VP(HIGH)
VP(MID)
VP(LOW)
1
2
Mode
Selection
(Key 2, Try Mode)
1
Parameter
Selection
(Key 1)
1
2
Addressing
(Code 3)
3
1
2
Parameter
Selection
(Key 2)
1
2
Addressing
(Code 2)
0
Figure 10. Example of Try mode programming pulses applied to the VCC pin. In this example,
Sensitivity (parameter key 1) is addressed to code 3, and D(Q) (parameter key 2) is addressed
to code 2. The values set in the Sensitivity and D(Q) registers will be held in the device until the
supply is cycled. Permanent fuse blowing cannot be accomplished in Try mode.
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14
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Programming State Machine
VP(MID)
VP(HIGH)
VP(HIGH)
VP(MID)
VP(MID)
VP(MID)
2 x VP(HIGH)
VP(HIGH)
VP(MID)
1
(Sens
Range1/
Range2)
VP(MID)
2
VP(MID)
(D(Q))
3
(fPWM/
Calibration
Test Mode)
VP(HIGH)
VP(MID)
VP(MID)
VP(MID)
(Lock All)
VP(HIGH)
VP(MID)
VP(MID)
6
VP(MID)
VP(HIGH)
Select Mode
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15
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Programming Logic Table
Mode or Parameter
Name
(Register Key)
Bit Field Address
Description
Binary Format
[MSB → LSB]
Decimal Equivalent Code
Lock, Blow
(1)
01
1
Entry to Lock or Blow mode
Try
(2)
10
2
Entry to Try mode
0 0000 0000
0
Minimum Sens value in SensRange1, Sens =
SensPRE
0 1111 1111
255
Maximum Sens value in SensRange1
1 0000 0000
256
Minimum Sens value in SensRange2
1 1111 1111
511
Maximum Sens value in SensRange2
Programmable Mode
Programmable Parameter
Sens
(Range1/Range2)
(1)
D(Q)
(2)
0 0000 0000
0
0 1111 1111
255
Maximum quiescent current duty cycle in range
Initial value, D(Q) = D(Q)PRE
1 0000 0000
256
Switch from programming increasing D(Q) to
programming decreasing D(Q)
1 1111 1111
511
Minimum quiescent current duty cycle in range
0 0000 0000
0
Initial value; fPWM = fPWMPRE
fPWM /
Calibration Test Mode
(3)
0 0000 1111
15
Minimum PWM frequency in range
0 0001 0000
16
Enable 50% Duty Cycle Calibration Test Mode
Lock All
(6)
10 0000 0000
512
Enable blowing Lock fuse to lock device
Sens
(%/gauss)
D(Q)
(%)
fPWM
(Hz)
fPWMPRE
D(Q)(max)
Quiescent Current
Duty Cycle Range
fPWM(max)
D(Q)PRE
fPWM(min)
D(Q)(min)
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16
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
50% Duty Cycle Calibration Test Mode
powered via different power and ground circuits. As a result, the
ground reference for the A1357 may differ from the ground reference of the system controller. In some customer applications, this
ground difference can be as large as ±0.5 V.
The calibration mode is provided so that the user can compensate
for differences in the ground potential between the A1357 and
any interface circuitry used to measure the pulse width of the
A1357 current. The test mode is optional and must be enabled
by blowing programming bits. After the bit for the test mode has
been blown, the device enters 50% Duty Cycle Calibration Test
mode every time the device is powered-up. The bit enabling test
mode is key 3, bit 4.
Differences in the ground reference for the A1357 and the system
controller can result in variations in the threshold voltage used
to measure the duty cycle of the A1357. If the PWM conversion
threshold voltage varies, then the duty cycle will vary because
there is a finite rise time, tr , and fall time, tf , in the PWM waveform. This problem is shown in figure 12.
In customer applications, the PWM interface circuitry (shown
as the system controller in figure 11) and the A1357 may be
1
VCC
VSUPPLY
A1357
CBYPASS
0.1 μF
System
Controller
GND
2
RSENSE
GND1
GND2
Figure 11. In many applications the A1357 may be powered using a different ground reference
than the system controller. This may cause the ground reference for the A1357 (GND1) to differ
from the ground reference of the system controller (GND2) by as much as to ± 0.5 V.
Threshold Voltage,
Vth (V)
PWM period
3.5
2.5
1.5
Vth (high)
Vth (centered)
Vth (low)
∆tr
∆tf
Duty Cycle
shorter than
expected
Time
Duty Cycle at
expected duration
Duty Cycle longer
than expected
Figure 12. When the threshold voltage, Vth , is correctly centered between Vth (high) and Vth (low) , the current duty cycle
accurately coincides with the applied magnetic field. If the threshold voltage is raised, the current duty cycle appears shorter
than expected. Conversely, if the threshold voltage is lowered, the current duty cycle is longer than expected.
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115 Northeast Cutoff
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1.508.853.5000; www.allegromicro.com
17
A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
The 50% Duty Cycle Calibration Test mode allows end users to
compensate for any threshold errors that result from a difference
in system ground potentials. When calibration mode has been
enabled, at power-up the device operates initially in calibration
mode for tCAL , 50 ms, during which the device current waveform
has a fixed 50% duty cycle (the programmed quiescent duty
cycle, D(Q) , value) regardless of the applied external magnetic
field (see figure 13). This allows the system controller to com-
Calibration sequence
pare the measured quiescent duty cycle with an ideal 50% duty
cycle. After tCAL has elapsed, the duty cycle will correspond to
an applied magnetic field as expected. The calibration test time
(tCAL) corresponds with a target PWM frequency of 1 kHz. If the
PWM frequency is programmed away from its target of 1 kHz,
the duration of the calibration test time will scale inversely with
the change in PWM frequency.
PWM proportional to
magnetic field
Figure 13. With calibration mode in effect, after powering-on the A1357 outputs a 50%
duty cycle for the first 50 ms, tCAL , regardless of the applied magnetic field. After tCAL has
elapsed, the output responds to a magnetic field as expected. The example in this figure
assumes that a large +B field is applied to the device after tCAL has elapsed.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
18
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
A1357
Package KB, 3-Pin SIP
+0.08
5.21 –0.05
45°
C
B
1.55 ±0.05
2.60 D
1.33 D
+0.08
3.43 –0.05
D
Mold Ejector
Pin Indent
Branded
Face
1
0.84 REF
2.16
MAX
E
14.73 ±0.51
+0.06
0.38 –0.03
1
2
3
Standard Branding Reference View
N = Device part number
Y = Last two digits of year of manufacture
W = Week of manufacture
A
+0.07
0.51 –0.05
NNNN
YYWW
45°
For Reference Only; not for tooling use (reference DWG-9009)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A
Dambar removal protrusion (6X)
B
Gate and tie bar burr area
C
Active Area Depth 0.43 mm REF
D
Hall element (not to scale)
E
Branding scale and appearance at supplier discretion
1.90 NOM
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115 Northeast Cutoff
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19
A1357
Two-Wire High Precision Linear Hall-Effect Sensor IC
With Pulse Width Modulated Output Current
Copyright ©2011-2013, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in life support devices or systems, if a failure of an Allegro product can reasonably be expected to cause the
failure of that life support device or system, or to affect the safety or effectiveness of that device or system.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its use;
nor for any infringement of patents or other rights of third parties which may result from its use.
For the latest version of this document, visit our website:
www.allegromicro.com
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115 Northeast Cutoff
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20