PANASONIC XN6A554

Composite Transistors
XN6A554
Silicon NPN epitaxial planer transistor
Unit: mm
+0.2
For high speed switching
2.8 –0.3
+0.25
1.5 –0.05
Symbol
Ratings
Unit
VCBO
40
V
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
VCEO
40
V
VEBO
5
V
IC
100
mA
Peak collector current
ICP
300
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
■ Electrical Characteristics
Parameter
6
Tr1
4
1
2
5
Tr2
3
(Ta=25˚C)
Symbol
Conditions
min
VCB = 40V, IE = 0
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
Forward current transfer ratio
hFE
VCE = 1V, IC = 10mA
60
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = 1V, IC = 10mA
0.5
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
Base to emitter saturation voltage
VBE(sat)
IC = 10mA, IB = 1mA
Transition frequency
fT
VCE = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Turn-off time
ton
Turn-on time
toff
Storage time
tstg
Test Circuits
+0.1
Internal Connection
ICBO
Ratio between 2 elements
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DT
Collector cutoff current
*2
1.45±0.1
+0.1
+0.1
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
(Ta=25˚C)
Collector to base voltage
*1
0.5 –0.05
0.95
0.95
0.4±0.2
■ Absolute Maximum Ratings
Storage temperature
3
0.1 to 0.3
2SC3757 × 2 elements
Parameter
4
0 to 0.05
●
2
0.16–0.06
■ Basic Part Number of Element
5
0.8
+0.2
2.9 –0.05
+0.2
●
1.1–0.1
●
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
Low VCE(sat).
1.9±0.1
■ Features
●
0.65±0.15
1
6
0.3 –0.05
0.65±0.15
typ
max
Unit
0.1
µA
0.1
µA
320
0.99
0.17
0.25
1.0
450
2
V
V
MHz
6
pF
17
*2
17
ns
10
1
Composite Transistors
XN6A554
ton, toff Test Circuit
Total power dissipation PT (mW)
90%
Vout
Vbb=2V
0
Vin
10%
Vout
10%
10%
Vin
10%
VCC=10V
50Ω
VCC=3V
Vbb=
–3V
Vin
90Ω
Vin=10V
500Ω
3.3kΩ
50Ω
1kΩ
910Ω
0.1µF 500Ω
220Ω
50Ω
Vout
A
Vout
3.3kΩ
500
0.1µF
0.1µF
Vin=10V
PT — Ta
tstg Test Circuit
90%
Vout
ton
tstg
toff
(Wave form at A)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
IC — VCE
VCE(sat) — IC
IB=3.0mA
2.5mA
80
2.0mA
1.5mA
60
1.0mA
40
0.5mA
20
0
0
0.2
0.4
0.6
0.8
1.0
30
10
3
1
25˚C
0.3
0.1
Collector to emitter voltage VCE (V)
–25˚C
1
3
30
400
300
Ta=75˚C
25˚C
–25˚C
1
3
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
1
100
10
3
30
Collector current IC (mA)
100
100
300
1000
Cob — VCB
500
400
300
200
100
0
–1
30
Collector current IC (mA)
6
VCE=10V
Ta=25˚C
Transition frequency fT (MHz)
500
0.3
10
fT — I E
VCE=1V
Forward current transfer ratio hFE
10
600
100
30
0.01
0.3
hFE — IC
200
IC/IB=10
Collector current IC (mA)
600
0
0.1
Ta=75˚C
0.03
0.01
0.1
1.2
IC/IB=10
Collector output capacitance Cob (pF)
Collector current IC (mA)
100
100
Base to emitter saturation voltage VBE(sat) (V)
Ta=25˚C
2
VBE(sat) — IC
100
Collector to emitter saturation voltage VCE(sat) (V)
120
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–3
–10
–30
–100 –300 –1000
Emitter current IE (mA)
1
3
10
30
100
Collector to base voltage VCB (V)