Composite Transistors XN6A554 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For high speed switching 2.8 –0.3 +0.25 1.5 –0.05 Symbol Ratings Unit VCBO 40 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 40 V VEBO 5 V IC 100 mA Peak collector current ICP 300 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C ■ Electrical Characteristics Parameter 6 Tr1 4 1 2 5 Tr2 3 (Ta=25˚C) Symbol Conditions min VCB = 40V, IE = 0 Emitter cutoff current IEBO VEB = 4V, IC = 0 Forward current transfer ratio hFE VCE = 1V, IC = 10mA 60 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 1V, IC = 10mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCE = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-off time ton Turn-on time toff Storage time tstg Test Circuits +0.1 Internal Connection ICBO Ratio between 2 elements 4 : Emitter (Tr2) 5 : Emitter (Tr1) 6 : Base (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: DT Collector cutoff current *2 1.45±0.1 +0.1 +0.1 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Collector (Tr2) (Ta=25˚C) Collector to base voltage *1 0.5 –0.05 0.95 0.95 0.4±0.2 ■ Absolute Maximum Ratings Storage temperature 3 0.1 to 0.3 2SC3757 × 2 elements Parameter 4 0 to 0.05 ● 2 0.16–0.06 ■ Basic Part Number of Element 5 0.8 +0.2 2.9 –0.05 +0.2 ● 1.1–0.1 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 1.9±0.1 ■ Features ● 0.65±0.15 1 6 0.3 –0.05 0.65±0.15 typ max Unit 0.1 µA 0.1 µA 320 0.99 0.17 0.25 1.0 450 2 V V MHz 6 pF 17 *2 17 ns 10 1 Composite Transistors XN6A554 ton, toff Test Circuit Total power dissipation PT (mW) 90% Vout Vbb=2V 0 Vin 10% Vout 10% 10% Vin 10% VCC=10V 50Ω VCC=3V Vbb= –3V Vin 90Ω Vin=10V 500Ω 3.3kΩ 50Ω 1kΩ 910Ω 0.1µF 500Ω 220Ω 50Ω Vout A Vout 3.3kΩ 500 0.1µF 0.1µF Vin=10V PT — Ta tstg Test Circuit 90% Vout ton tstg toff (Wave form at A) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 30 10 3 1 25˚C 0.3 0.1 Collector to emitter voltage VCE (V) –25˚C 1 3 30 400 300 Ta=75˚C 25˚C –25˚C 1 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 1 100 10 3 30 Collector current IC (mA) 100 100 300 1000 Cob — VCB 500 400 300 200 100 0 –1 30 Collector current IC (mA) 6 VCE=10V Ta=25˚C Transition frequency fT (MHz) 500 0.3 10 fT — I E VCE=1V Forward current transfer ratio hFE 10 600 100 30 0.01 0.3 hFE — IC 200 IC/IB=10 Collector current IC (mA) 600 0 0.1 Ta=75˚C 0.03 0.01 0.1 1.2 IC/IB=10 Collector output capacitance Cob (pF) Collector current IC (mA) 100 100 Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C 2 VBE(sat) — IC 100 Collector to emitter saturation voltage VCE(sat) (V) 120 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) 1 3 10 30 100 Collector to base voltage VCB (V)