Application Note AN-1085revC IRS2153(1)D and IR2153(1)/IR2153(1)D Comparison Table of Contents Page Introduction...................................................................................................................................... 1 Block Diagrams............................................................................................................................. 2 IR2153(1)/IR2153(1)D vs. IRS2153(1)D Electrical Characteristics Differences.................... 4 Conclusions..................................................................................................................................... 7 1. INTRODUCTION The new IRS2153(1)D replaces the existing IR2153(1)/IR2153(1)D HVICs advantageously by saving the need for an external bootstrap diode. It is based on the same core design and is pin-to-pin compatible, allowing minimum changes to the previous design. This application note describes the differences between the existing IR2153(1)/IR2153(1)D IC family and the new IRS2153(1)D. 2. BLOCK DIAGRAMS The IR2153(1)/IR2153(1)D is not a single IC, but consists of a family of ICs (Table I). P/N IR2153PbF IR2153SPbF IR21531PbF IR21531SPbF IR2153DPbF IR2153DSPbF IR21531DPbF IR21531DSPbF Deadtime (typ.) 1.2 μs 1.2 μs 0.6 μs 0.6 μs 1.2 μs 1.2 μs 0.6 μs 0.6 μs Internal Bootstrap Diode No No No No Yes Yes Yes Yes www.irf.com PDF created with pdfFactory trial version www.pdffactory.com Package Type DIP8 SO8 DIP8 SO8 DIP8 SO8 DIP8 SO8 1 The functional block diagrams of each IC (Figs. 1 and 2) are exactly the same except the internal bootstrap diode. Figure 1: IR2153(1) Functional Block Diagram Figure 2: IR2153(1)D Functional Block Diagram www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 2 In the new IRS2153(1)D IC (Fig. 3), an internal FET now replaces the internal bootstrap diode, which was previously a separate die. IRS2153(1)D has the same functionality as IR2153(1)D and the need for an additional diode has been eliminated. Figure 3: IRS2153(1)D Functional Block Diagram Consequently: a customer using IR2153(1)/IR2153(1)D should take particular care of the bootstrap circuitry when switching to IRS2153(1)D. www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 3 3. IR2153(1)/IR2153(1)D vs. IRS2153(1)D ELECTRICAL CHARACTERISTICS DIFFERENCES The following tables and comments highlight the differences between the IR2153(1)/IR2153(1)D and the new IRS2153(1)D: Absolute Maximum Ratings Parameter Symbol IR2153(1)/IR2153(1)D Definition IRS2153(1)D Units min max min max -0.3 625 -0.3 625 V VB High side floating supply voltage VS High side floating supply offset voltage VB - 25 VB + 0.3 VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VS - 0.3 VB + 0.3 V V V VLO Low side output voltage -0.3 VCC + 0.3 -0.3 VCC + 0.3 V IRT RT pin current -5 5 -5 5 mA VRT RT pin voltage -0.3 VCC + 0.3 -0.3 VCC + 0.3 VCT CT pin voltage -0.3 VCC + 0.3 -0.3 VCC + 0.3 V V V ICC Supply current (Note 1) --- 25 --- 20 IOMAX Maximum allowable current at LO and HO due to external power transistor Miller effect -500 500 mA mA mA dVS/dt Allowable offset voltage slew rate -50 50 -50 50 V/ns PD Max. power dissipation @ TA ≤ +25 ºC, 8-Pin DIP --- 1.0 --- 1.0 PD Max. power dissipation @ TA ≤ +25 ºC, 8-Pin SOIC --- 0.625 --- 0.625 W W W RthJA Thermal resistance, junction to ambient, 8-Pin DIP --- 125 --- 85 ºC/W oC/W RthJA Thermal resistance, junction to ambient, 8-Pin SOIC --- 200 --- 128 ºC/W TJ Junction temperature -55 150 -55 150 TS Storage temperature -55 150 -55 150 TL Lead temperature (soldering, 10 seconds) --- 300 --- 300 ºC Comments: All absolute maximum ratings are exactly the same except for the maximum supply current limit and the thermal resistance. The maximum supply current is rated at 20 mA for the new IRS2153(1)D versus 25 mA for the IR2153(1)/IR2153(1)D and is due to the internal zener clamp. A 20 mA maximum versus 25 mA should be a negligible amount for most applications. A lower thermal resistance will give lower temperatures on the package surface. Recommended Operating Conditions Parameter Symbol VBS IR2153(1)/IR2153(1)D Definition High side floating supply voltage VS Steady state high side floating supply offset voltage VCC Supply voltage ICC Supply current TJ Junction temperature IRS2153(1)D Units min max min max VCC - 0.7 VCLAMP VCC - 0.7 VCLAMP V -3.0 600 -3.0 600 V V 10 VCLAMP VCCUV+ + 0.1V VCLAMP V 5 mA 125 ºC 5 -40 125 -40 Comments: All parameters are mostly the same. www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 4 Recommended Component Values Parameter Symbol Definition RT CT IR2153(1)/IR2153(1)D IRS2153(1)D Units min max min max Timing resistor value 1 --- 1 --- kΩ CT pin capacitor value 330 --- 330 --- pF Comments: All parameters are exactly the same. Electrical Characteristics Bootstrap FET/Diode Characteristics Symbol VF Definition Bootstrap diode forward voltage (IR2153(1)D) IR2153(1)/IR2153(1)D Min Typ Max 0.5 --- 1.0 IRS2153(1)D Min Typ Max VB_ON VB when the bootstrap FET is on --- 13.7 --- IB_CAP VB source current when bootstrap FET is on 40 55 --- IB_10V VB source current when bootstrap FET is on 10 12 Units Test Conditions V IF = 250 mA V V mA CBS=0.1 µF mA VB=10 V mA Comments: The IRS2153(1)D contains an integrated bootstrap MOSFET that eliminates the need for an external highvoltage bootstrap diode. The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and has a limited source current due to RDSon. The VBS voltage will determined each cycle by on the on-time of LO, the size of the external MOSFETs and the value of the CBS capacitor. At start-up, several cycles of LO will occur first until VBS increases above VBSUV+ (see Floating Supply Characteristics) and then HO will start to oscillate. The maximum operating frequency will be determined by the MOSFET driven by IRS2153(1)D and the value of the CBS capacitor since the bootstrap MOSFET needs to maintain VBS above VBSUV- each cycle. If the frequency is too high, VBS will fall below VBSUV- and the HO output will turn off. To avoid this problem, an external high-voltage bootstrap diode can be added in parallel to maintain VBS above VBSUV- during high-frequency applications. Low Voltage Supply Characteristics Symbol Definition IR2153(1)/IR2153(1)D IRS2153(1)D Min Typ Max Min Typ M ax Units Test Conditions VCCUV+ Rising VCC undervoltage lockout threshold 8.1 9.0 8.1 10.0 11.0 12.0 VCCUV- Falling VCC undervoltage lockout threshold t threshold 7.2 8.0 7.2 8.0 9.0 10.0 VCC undervoltage lockout hysteresis 0.5 1.0 0.5 1.6 2.0 2.4 Micropower startup VCC supply current --- 75 150 --- 130 170 IQCC Quiescent VCC supply current --- 500 950 --- 800 1000 ICC VCC supply current --- 1.8 --- mA R T =36.9 kΩ 14.4 15.4 16.8 V ICC = 5 mA VCCUVHYS IQCCUV VCLAMP VCC zener clamp voltage 14.4 15.6 16.8 V µA V CC ≤ V CCUV- Comments: No major changes other than VCCUV+ and VCCUV- being higher, as well as the hysteresis. The higher UVLO thresholds should not impact the application since typically VCC is regulated against its internal 15.4 V clamp voltage. The increased hysteresis should make the application more robust and prevent the IC from turning off momentarily should transient dips in the VCC voltage occur. www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 5 Floating Supply Characteristics Symbol IQBS VBSUV+ Definition Quiescent VBS supply current IR2153(1)/IR2153(1)D IRS2153(1)D Min Typ Max Min Typ Max --- 30 50 --- 60 80 8.0 9.0 9.5 VBS supply undervoltage positive going threshold Test Conditions Units µA V VBSUV- VBS supply undervoltage negative going threshold IQBSUV- Micropower startup VBS supply current --- 0 10 µA VCC ≤ VCCUV-, VCC = VBS VBSMIN Minimum required VBS voltage for proper functionality from RT to HO --- 4.0 5.0 V VCC = VCCUV- + 0.1 V Offset supply leakage current --- --- 50 µA VB = VS = 600 V ILK 7.0 --- 8.0 --- 9.0 50 Comments: The new IRS2153(1)D contains an under-voltage lockout circuit. This is necessary because of the additional integrated bootstrap MOSFET. The UVLO circuit will guarantee that VBS is high enough before turning on HO and will protect the external MOSFET from being driven in the linear region should VBS decrease too much. Oscillator I/O Characteristics Symbol f OSC Definition Oscillator frequency IR2153(1)/IR2153(1)D IRS2153(1)D Min Typ Max Min Typ Max 19.4 20 20.6 18.4 19.0 19.6 94 100 106 88 93 100 Units kHz d RT pin duty cycle 48 50 52 --- 50 --- % ICT CT pin current --- 0.001 1.0 --- 0.02 1.0 µA mA Test Conditions RT= 36.9/36.5 kΩ RT= 7.43/7.15 kΩ fo < 100 kHz ICTUV UV-mode CT pin pulldown current 0.30 0.70 1.2 0.2 0.3 0.6 VCT+ Upper CT ramp voltage threshold --- 8.0 --- --- 9.32 --- VCT- Lower CT ramp voltage threshold --- 4.0 --- --- 4.66 --- CT voltage shutdown threshold 1.8 2.1 2.4 2.2 2.3 2.4 --- 10 50 --- 10 50 IRT = -100 µA --- 100 300 --- 100 300 IRT = -1 mA --- 10 50 --- 10 50 IRT = 100 µA --- 100 300 --- 100 300 IRT = 1 mA --- 0 100 --- 0 100 --- 10 50 --- 10 50 --- 100 300 --- 100 300 VCTSD VRT+ High-level RT output voltage, VCC - VRT VRT- Low-level RT output voltage VRTUV UV-mode RT output voltage VRTSD SD-mode RT output voltage, VCC - VRT VCC = 7 V V mV VCC ≤ VCCUVIRT = -100 µA, VCT = 0 V IRT = -1 mA, VCT = 0 V Comments: The new IRS2153(1)D should fit into an existing design and maintain existing performance without any changes to the design with the exception of RT/CT value. www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 6 IR2153(1)/IR2153(1)D Gate Driver Output Characteristics Symbol Definition IRS2153(1)D Min Typ Max Min Typ Max VOH High level output voltage --- 0 100 --- VCC --- VOL Low level output voltage, VO --- 0 100 --- COM --- VOL_UV UV-mode output voltage, VO --- 0 100 --- COM --- tr Output rise time --- 80 150 --- 120 220 tf Output fall time --- 45 100 --- 50 80 tsd Shutdown propagation delay td Output deadtime (HO or LO) --- 660 --- --- 350 --- 0.75 0.35 1.20 0.6 1.65 0.85 0.65 0.35 1.10 0.6 1.75 0.85 I O+ Output source current --- 180 --- I O+ Output sink current --- 260 --- 2153D 21531D Units Test Conditions IO = 0 A mV IO = 0 A IO = 0 A , VCC ≤ VCCUV- ns µs mA Comments: Output rise and fall times are slightly longer due to a slight decrease in the output source and sink currents Deadtime tolerances had to be slightly downgraded, but should not impact most applications. 3. Conclusions In most cases, any member for the IR2153(1)/IR2153(1)D family will be easily and advantageously replaced by the new leadfree IRS2153(1)D. The application will benefit a monolithic solution integrating a bootstrap FET, an increased UVLO hysteresis, a possibility of non-latch IC shutdown, better thermal behavior and ROHS compatibility while keeping a 3% tolerance on the frequency. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 7/242006 www.irf.com AN-1085 PDF created with pdfFactory trial version www.pdffactory.com 7