ETC IR2153DS

Preliminary Data Sheet No. PD60062-K
IR2153(D) (S)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Product Summary
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
VOFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
Vclamp
15.6V
Deadtime (typ.)
1.2 µs
Packages
Description
The IR2153(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front
8 Lead SOIC
8 Lead PDIP
end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and
is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise
immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the
undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity
of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR2153D
IR2153(S)
600V
MAX
600V
MAX
VCC
VCC
VB
HO
HO
RT
www.irf.com
RT
VS
CT
Shutdown
VS
CT
LO
COM
VB
Shutdown
LO
COM
1
IR2153(D) (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
VB
High side floating supply voltage
Min.
Max.
-0.3
625
VB + 0.3
Units
VS
High side floating supply offset voltage
VB - 25
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VLO
Low side output voltage
-0.3
VCC + 0.3
VRT
RT pin voltage
-0.3
VCC + 0.3
VCT
CT pin voltage
-0.3
VCC + 0.3
ICC
Supply current (note 1)
—
25
IRT
RT pin current
-5
5
Allowable offset voltage slew rate
-50
50
dV s/dt
Maximum power dissipation @ T A ≤ +25°C
PD
RthJA
Thermal resistance, junction to ambient
(8 Lead DIP)
—
1.0
(8 Lead SOIC)
—
0.625
(8 Lead DIP)
—
125
(8 Lead SOIC)
—
200
150
TJ
Junction temperature
-55
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
High side floating supply voltage
VS
Steady state high side floating supply offset voltage
Min.
Max.
VCC - 0.7
VCLAMP
-3.0 (note 2)
600
VCLAMP
Units
V
VCC
Supply voltage
10
ICC
Supply current
(note 3)
5
mA
TJ
Junction temperature
-40
125
°C
Note 1:
Note 2:
Note 3:
2
Definition
VBs
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
www.irf.com
IR2153(D) (S)
Recommended Component Values
Symbol
Component
Min.
Max.
Units
RT
Timing resistor value
10
—
kΩ
CT
CT pin capacitor value
330
—
pF
IR2153 RT vs Frequency
1000000
Frequency (Hz)
100000
330pf
10000
470pF
1nF
1000
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
www.irf.com
3
IR2153(D) (S)
Electrical Characteristics
VBIAS (VCC , VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
Min.
Typ.
Max.
VCCUV+
VCCUVVCCUVH
IQCCUV
IQCC
VCLAMP
8.1
7.2
0.5
—
—
14.4
9.0
8.0
1.0
75
500
15.6
9.9
8.8
1.5
150
950
16.8
Min.
Typ.
Max.
—
—
—
0
30
4.0
10
50
5.0
V
VCC=VCCUV+ + 0.1V
—
0.5
—
—
50
1.0
µA
V
VB = VS = 600V
IF = 250mA
Rising V CC undervoltage lockout threshold
Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage
Units Test Conditions
V
µA
V
VCC ≤ VCCUVICC = 5mA
Floating Supply Characteristics
Symbol Definition
IQBSUV
IQBS
VBSMIN
ILK
VF
Micropower startup VBS supply current
Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR2153D)
Units Test Conditions
µA
VCC ≤ VCCUV-
Oscillator I/O Characteristics
Symbol Definition
fosc
Oscillator frequency
d
ICT
ICTUV
VCT+
VCTVCTSD
VRT+
RT pin duty cycle
CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, VCC - VRT
VRT-
Low-level RT output voltage
VRTUV
VRTSD
UV-mode RT output voltage
SD-Mode RT output voltage, VCC - VRT
Min.
Typ.
Max.
19.4
94
48
—
0.30
—
—
1.8
—
—
—
—
—
—
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
—
4
10
300
Units Test Conditions
kHz
%
uA
mA
RT = 36.9kΩ
RT = 7.43kΩ
fo < 100kHz
VCC = 7V
V
mV
IRT = 100µA
IRT = 1mA
IRT = 100µA
IRT = 1mA
VCC ≤ VCCUVIRT = 100µA,
VCT = 0V
IRT = 1mA,
VCT = 0V
www.irf.com
IR2153(D) (S)
Electrical Characteristics (cont.)
Gate Driver Output Characteristics
Symbol Definition
VOH
High level output voltage, V BIAS -VO
VOL
Low-level output voltage, VO
VOL_UV UV-mode output voltage, VO
tr
tf
tsd
td
Output rise time
Output fall time
Shutdown propogation delay
Output deadtime (HO or LO)
Min.
—
—
—
—
—
—
0.75
Typ.
0
0
0
80
45
660
1.20
Max.
100
100
100
150
100
—
1.65
Units Test Conditions
mV
IO = OA
IO = OA
IO = OA
VCC ≤ VCCUV-
nsec
µsec
Lead Definitions
Symbol
Description
VCC
RT
CT
COM
LO
VS
HO
VB
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
Low side gate driver output
High voltage floating supply return
High side gate driver output
High side gate driver floating supply
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2153(D)
IR2153S
NOTE: The IR2153D is offered in 8 lead PDIP only.
www.irf.com
5
IR2153(D) (S)
Functional Block Diagram for IR2153(S)
RT
VB
R
Q
HV
LEVEL
SHIFT
+
R
+
-
R
Q
S
Q
PULSE
FILTER
R
HO
S
PULSE
GEN
DEAD
TIME
VS
VCC
R/2
CT
15.6V
+
R/2
LOGIC
LO
DELAY
DEAD
TIME
UV
DETECT
COM
Functional Block Diagram for IR2153D
RT
VB
R
Q
HV
LEVEL
SHIFT
+
R
R
+
-
S
Q
DEAD
TIME
PULSE
FILTER
R
PULSE
GEN
VS
D1
Q
VCC
R/2
CT
15.6V
+
R/2
HO
S
LOGIC
UV
DETECT
DEAD
TIME
DELAY
LO
COM
NOTE: The D1 is a separate die.
6
www.irf.com
IR2153(D) (S)
www.irf.com
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
7
IR2153(D) (S)
V
CLAMP
Vccuv+
Vcc
RT
RT ,C T
2/3
1/3
CT
td
LO
td
HO
Figure 1. Input/Output Timing Diagram
RT
50%
50%
(HO)
(LO)
90%
HO
10%
DT
LO
90%
10%
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 4/6/2001
8
www.irf.com