Preliminary Data Sheet No. PD60063I IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity High side output in phase with RT Excellent latch immunity on all inputs and outputs ESD protection on all leads Product Summary VOFFSET 600V max. Duty Cycle 50% Tr/Tp 80/40ns Vclamp 15.6V Deadtime (typ.) 1.2 µs Packages Description The IR2154 is an improved version of the popular IR2152 gate driver IC, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2154 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins. 8 Lead SOIC 8 Lead PDIP Typical Connection 600V MAX VCC VB HO Shutdown RT VS CT LO COM IR2154 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. -0.3 625 High side floating supply offset voltage VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VLO Low side output voltage -0.3 VCC + 0.3 VRT RT pin voltage -0.3 VCC + 0.3 VCT CT pin voltage -0.3 VCC + 0.3 ICC Supply current (note 1) — 25 IRT RT pin current -5 5 VB High side floating supply voltage VS dVs/dt PD RthJA Allowable offset voltage slew rate Maximum power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient -50 50 (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 TJ Junction temperature -55 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) — 300 Min. Max. VCC - 0.7 VCLAMP Units V mA V/ns W °C/W °C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol Definition VBs High side floating supply voltage VS Steady state high side floating supply offset voltage -3.0 (note 2) 600 VCLAMP Units V VCC Supply voltage 10 ICC Supply current (note 3) 5 mA TJ Junction temperature -40 125 °C Note 1: Note 2: Note 3: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Enough current should br supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin. 2 IR2154 Recommended Component Values Symbol Component RT Timing resistor value CT CT pin capacitor value Min. Max. 10 — Units kΩ 330 — pF IR2154 RT RT vs IR2153 vs Frequency Frequency 1000000 Frequency (Hz) 100000 330pf 10000 470pF 1nF 1000 CT Values 2.2nF 4.7nF 10nF 100 10 10 100 1000 10000 100000 1000000 RT (ohms) Electrical Characteristics VBIAS (VCC, V BS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Low Voltage Supply Characteristics Symbol Definition VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage Min. Typ. Max. 8.1 7.2 0.5 — — 14.4 9.0 8.0 1.0 75 500 15.6 9.9 8.8 1.5 150 950 16.8 3 Units Test Conditions V µA V VCC ≤ VCCUVICC = 5mA IR2154 Electrical Characteristics (cont.) Floating Supply Characteristics Symbol Definition Min. Typ. Max. — — — 0 30 4.0 10 50 5.0 V — — 50 µA Symbol Definition Min. Typ. fosc Oscillator frequency d ICT ICTUV VCT+ VCTVCTSD VRT+ RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, V CC - VRT VRT- Low-level RT output voltage VRTUV VRTSD UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT 19.4 94 48 — 0.30 — — 1.8 — — — — — — 20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 IQBSUV IQBS VBSMIN ILK Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Units Test Conditions µA VCC ≤ VCCUVVCC=VCCUV+ + 0.1V VB = VS = 600V Oscillator I/O Characteristics — 10 Max. Units Test Conditions 20.6 106 52 1.0 1.2 — — 2.4 50 300 50 300 100 50 kHz % uA mA RT = 36.9kΩ RT = 7.43kΩ fo < 100kHz VCC = 7V V mV 300 IRT = 100µA IRT = 1mA IRT = 100µA IRT = 1mA VCC ≤ VCCUVIRT = 100µA, VCT = 0V IRT = 1mA, VCT = 0V Gate Driver Output Characteristics Symbol Definition VOH High level output voltage, VBIAS -VO VOL Low-level output voltage, VO VOL_UV UV-mode output voltage, VO tr tf tsd td Output rise time Output fall time Shutdown propogation delay Output deadtime (HO or LO) Min. Typ. — — — 0 0 0 100 100 100 — — — 0.35 80 45 660 0.60 150 100 — 0.85 4 Max. Units Test Conditions mV nsec µsec IO = OA IO = OA IO = OA VCC ≤ VCCUV- IR2154 Functional Block Diagram RT VB HV LEVEL HV SHIFT LEVEL SHIFT R + R + - R Q S Q DEAD TIME Q PULSE FILTER R PULSE GEN VS VCC R/2 CT HO S 15.6V + R/2 LOGIC LO DELAY DEAD TIME UV DETECT COM Lead Definitions Symbol Description VCC RT CT COM LO VS HO VB Logic and internal gate drive supply voltage Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low side gate driver output High voltage floating supply return High side gate driver output High side gate driver floating supply Lead Assignments 8 Lead PDIP 8 Lead SOIC IR2154 IR2154S 5 IR2154 8 Lead PDIP 01-3003 01 8 Lead SOIC 01-0021 08 6 IR2154 V CLAMP Vccuv+ Vcc RT R T ,C T 2/3 1/3 CT td HO td LO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions Figure 3. Deadtime Waveform Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99 7