IRF IR2154

Preliminary Data Sheet No. PD60063I
IR2154
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
High side output in phase with RT
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Product Summary
VOFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
Vclamp
15.6V
Deadtime (typ.)
1.2 µs
Packages
Description
The IR2154 is an improved version of the popular
IR2152 gate driver IC, and incorporates a high voltage
half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The
IR2154 provides more functionality and is easier to use
than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs
can be disabled using a low voltage control signal. In
addition, the gate driver output pulse widths are the
same once the rising undervoltage lockout threshold
on VCC has been reached, resulting in a more stable
profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering
the peak di/dt of the gate drivers, and by increasing the
undervoltage lockout hysteresis to 1V. Finally, special
attention has been payed to maximizing the latch
immunity of the device, and providing comprehensive
ESD protection on all pins.
8 Lead SOIC
8 Lead PDIP
Typical Connection
600V
MAX
VCC
VB
HO
Shutdown
RT
VS
CT
LO
COM
IR2154
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
-0.3
625
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VLO
Low side output voltage
-0.3
VCC + 0.3
VRT
RT pin voltage
-0.3
VCC + 0.3
VCT
CT pin voltage
-0.3
VCC + 0.3
ICC
Supply current (note 1)
—
25
IRT
RT pin current
-5
5
VB
High side floating supply voltage
VS
dVs/dt
PD
RthJA
Allowable offset voltage slew rate
Maximum power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
-50
50
(8 Lead DIP)
—
1.0
(8 Lead SOIC)
—
0.625
(8 Lead DIP)
—
125
(8 Lead SOIC)
—
200
TJ
Junction temperature
-55
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
Min.
Max.
VCC - 0.7
VCLAMP
Units
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
Definition
VBs
High side floating supply voltage
VS
Steady state high side floating supply offset voltage
-3.0 (note 2)
600
VCLAMP
Units
V
VCC
Supply voltage
10
ICC
Supply current
(note 3)
5
mA
TJ
Junction temperature
-40
125
°C
Note 1:
Note 2:
Note 3:
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Enough current should br supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
2
IR2154
Recommended Component Values
Symbol
Component
RT
Timing resistor value
CT
CT pin capacitor value
Min.
Max.
10
—
Units
kΩ
330
—
pF
IR2154 RT
RT vs
IR2153
vs Frequency
Frequency
1000000
Frequency (Hz)
100000
330pf
10000
470pF
1nF
1000
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
Electrical Characteristics
VBIAS (VCC, V BS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to COM. The VO and I O parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+
VCCUVVCCUVH
IQCCUV
IQCC
VCLAMP
Rising VCC undervoltage lockout threshold
Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage
Min.
Typ.
Max.
8.1
7.2
0.5
—
—
14.4
9.0
8.0
1.0
75
500
15.6
9.9
8.8
1.5
150
950
16.8
3
Units Test Conditions
V
µA
V
VCC ≤ VCCUVICC = 5mA
IR2154
Electrical Characteristics (cont.)
Floating Supply Characteristics
Symbol Definition
Min.
Typ.
Max.
—
—
—
0
30
4.0
10
50
5.0
V
—
—
50
µA
Symbol Definition
Min.
Typ.
fosc
Oscillator frequency
d
ICT
ICTUV
VCT+
VCTVCTSD
VRT+
RT pin duty cycle
CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, V CC - VRT
VRT-
Low-level RT output voltage
VRTUV
VRTSD
UV-mode RT output voltage
SD-Mode RT output voltage, VCC - VRT
19.4
94
48
—
0.30
—
—
1.8
—
—
—
—
—
—
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
IQBSUV
IQBS
VBSMIN
ILK
Micropower startup VBS supply current
Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Units Test Conditions
µA
VCC ≤ VCCUVVCC=VCCUV+ + 0.1V
VB = VS = 600V
Oscillator I/O Characteristics
—
10
Max. Units Test Conditions
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
kHz
%
uA
mA
RT = 36.9kΩ
RT = 7.43kΩ
fo < 100kHz
VCC = 7V
V
mV
300
IRT = 100µA
IRT = 1mA
IRT = 100µA
IRT = 1mA
VCC ≤ VCCUVIRT = 100µA,
VCT = 0V
IRT = 1mA,
VCT = 0V
Gate Driver Output Characteristics
Symbol Definition
VOH
High level output voltage, VBIAS -VO
VOL
Low-level output voltage, VO
VOL_UV UV-mode output voltage, VO
tr
tf
tsd
td
Output rise time
Output fall time
Shutdown propogation delay
Output deadtime (HO or LO)
Min.
Typ.
—
—
—
0
0
0
100
100
100
—
—
—
0.35
80
45
660
0.60
150
100
—
0.85
4
Max.
Units Test Conditions
mV
nsec
µsec
IO = OA
IO = OA
IO = OA
VCC ≤ VCCUV-
IR2154
Functional Block Diagram
RT
VB
HV
LEVEL
HV
SHIFT
LEVEL
SHIFT
R
+
R
+
-
R
Q
S
Q
DEAD
TIME
Q
PULSE
FILTER
R
PULSE
GEN
VS
VCC
R/2
CT
HO
S
15.6V
+
R/2
LOGIC
LO
DELAY
DEAD
TIME
UV
DETECT
COM
Lead Definitions
Symbol
Description
VCC
RT
CT
COM
LO
VS
HO
VB
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
Low side gate driver output
High voltage floating supply return
High side gate driver output
High side gate driver floating supply
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2154
IR2154S
5
IR2154
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
6
IR2154
V CLAMP
Vccuv+
Vcc
RT
R T ,C T
2/3
1/3
CT
td
HO
td
LO
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630
IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
3/1/99
7