523

SENSITRON
SEMICONDUCTOR
SD275SC100A/B/C
TECHNICAL DATA
DATA SHEET 523, REV. B
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
200C Operating Temperature
Applications:
 Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode
Features:








Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
(1)
8.3 ms, half Sine wave
Max.
100
120
Units
V
A
1650
A
TJ = 25 C, IAS = 1.3 A,
L = 24 mH
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
-
19.0
mJ
1.3
A
-65 to +200
-65 to +200
C
C
Max.
0.87
0.72
2
Units
V
V
mA
48
mA
3000
pF
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Condition
@ 120A, Pulse, TJ = 25 C
@ 120A, Pulse, TJ = 125 C
@VR = 100V, Pulse,
TJ = 25 C
@VR = 100V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
(1) in SHD package
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
SD275SC100A/B/C
SENSITRON
TECHNICAL DATA
DATA SHEET 523, REV. B
Mechanical Dimensions: In Inches / mm
D
H
Schottky Chip
Figure 1
B A
h
Moly Attached
Schottky Die
Figure 2
Top side(Anode) metallization:
A = Al - 25 kÅ minimum, Figure 1
B = Ag - 30 kÅ minimum, Figure 1
C = Au - 12 kÅ min, Figure 2
Bottom side (Cathode) metallization:
A, B, C = Ti/Ni/Ag - 30 kÅ minimum.
A
0.275±0.003
Bottom side is cathode, top side is
anode. D
B
H
0.267±0.003
0.220±0.005
0.0155±0.001
h
0.011±0.002
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
SD275SC100A/B/C
SENSITRON
TECHNICAL DATA
DATA SHEET 523, REV. B
Typical Forw ard Characteristics
Typical Rev erse Characteristics
10
Instantaneous Reverse Current -R I(mA)
10 2
Instantaneous Forward Current F- I(A)
200 °C
175 °C
10 1
10 0
2
200 °C
10 1
175 °C
150 °C
10 0
125 °C
10
-1
100 °C
75 °C
10 -2
50 °C
10 -3
25 °C
10 -4
125 °C
0
20
40
60
80
Reverse Voltage - V R (V)
100
120
Typical Junction Capacitance
10
-1
10 -2
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage Drop - V F (V)
0.7
0.8
Junction Capacitance - C
T (pF)
25 °C
2500
2000
1500
1000
500
0
20
40
60
80
100
Reverse Voltage - V R (V)
120
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]