Product Information SCM1100M Series High Voltage 3 Phase Motor Drivers Introduction The SCM1100M is a high voltage three-phase motor driver IC for 85 to 253 VAC input, middle output power motor driver systems. IGBTs, diodes, and controller ICs are all housed in the proprietary SCM package (figure 1), and the protection circuits enhance system-level reliability. Features and benefits include the following: ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others ▪ Protection against simultaneous high- and low-side turn-on (STP) ▪ Bootstrap diodes with series resistors for suppressing inrush current are incorporated ▪ CMOS compatible input (3.3 to 5 V) ▪ Designed to minimize simultaneous current through both high- and low-side IGBTs by optimizing gate drive resistors ▪ UVLO protection with auto restart ▪ Overcurrent protection with off-time period adjustable by an external capacitor ▪ Fault (FO indicator) signal output at protection activation: UVLO (low side only), OCP, and STP ▪ Proprietary power DIP package ▪ UL Recognized Component (File No.: E118037) The product lineup for the SCM1100M series provides the following options for motor driving applications: Part Number IGBT Rating Remarks SCM1101M 600 V / 10 A Low saturation voltage SCM1103M 600 V / 5 A Low saturation voltage SCM1104M 600 V / 8 A Low saturation voltage SCM1104MF 600 V / 8 A Low saturation voltage SCM1105MF 600 V / 15 A Low saturation voltage SCM1106M 600 V / 10 A High speed SCM1106MF 600 V / 10 A High speed SCM1110MF 600 V / 15 A High speed Figure 1. SCM1100M Series packages are fully molded DIPs, For 10 to 15 A (suffix F) variants, a copper heat dissipation pad is attached to the upper surface of the case.(left); for 5 to 10 A devices, the standard case is available (right). stands for inverter power module, a technology that has now become prominent in the marketplace, and for Sanken, it highlights a broad variety of high voltage, three-phase motor driver ICs targeted at the residential white goods (home appliance) and commercial three-phase motor market segments, such as: air conditioners, refrigerators, and washing machines. Sanken IPM devices are particularly well-suited to applications in variable speed control systems and power inverter systems. Sanken has developed a great deal of expertise in these markets, which have become mature in certain areas due to governmental regulations, and are emerging in many other marketplaces. Demand for these applications is expected to increase rapidly in the near future, due to commercial economic pressures and governmental regulations mandating the use of energy-conserving technologies. Contents Energy-Conserving Technology The SCM1100M series is one of the expanding IPM product lines being offered by the Sanken Electric Company. IPM All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of 25°C, unless otherwise stated. 38100, Rev. 3 Introduction Energy-Conserving Technology Rapid Redesign Support Robust Device Design Pin Functional Descriptions Protection Circuits Precautions Application Circuit Characteristic Performance Data Output Characteristic Performance Data 1 1 2 2 2 4 5 6 7 9 Rapid Redesign Support IPM type ICs are gradually becoming prevalent for controlling motors in residential and commercial laundry washing machines. In this application, the ICs replace several discrete components, thus saving application space and design effort. In many instances, IPM devices yield the lowest overall cost solution, especially in the current regulatory environment, which is forcing manufacturers to redesign their power management systems. Traditional discrete-device topologies are proving difficult to adapt to these applications, and manufacturers can take advantage of rapid design solutions using the highly integrated topologies offered by IPM types of devices. Sanken Electric IPMs optimally fulfill such market needs with products that integrate our latest technologies inside a single package. Simplified Design for Application Circuits The SCM1100M series supports the 3-shunt method, in which a shunt resistor is used in each phase. This enables small currents to be detected, and highly accurate inverter control to be achieved, thus contributing to low motor noise. In addition, each of the three phases contains an overcurrent protection circuit, and a function that prevents simultaneous turn-on of both the highside and low-side IGBTs. Overall, use of the SCM1100M series with the 3-shunt method allows a 15% reduction in the area of the application print circuit board used for the main circuit of the inverter, and a reduction in the quantity of components of about 50%. With these and many other designer-friendly features, the SCM1100M series allows a highly reliable inverter main circuit to be designed using only a small number of external components. allowing stable control to be achieved. It also avoids consecutive short-circuits when OCP protection mode is released. The OCP mode also features soft turn-off at power-down during an overcurrent event. This minimizes negative voltage impinging on the LS terminal, by restraining di/dt. This protects the IC from failure due to reverse voltage there and on the external current sense circuit. All three drive phases can be simultaneously brought to a complete stop (all three gates turned off) during protection modes. This can be implemented by connecting the 3 failure signal output terminals externally. The FO terminal is also used as an enable input. Failure signal output continues during protection modes: CMOS logic circuit operation continues, as well as UVLO during OCP and STP modes. Pin Functional Descriptions This section describes the features of the SCM1100M devices in order by pin function. Refer to figure 2 for a block diagram of the devices. U, V, and W. These pins are the outputs of the individual IC phases, and serve as the connection terminals to the 3 phase motor that is being driven. VB1, VB2, and VB3. Circuit main supply inputs that drive high-side IGBTs. Serve as terminals for the bootstrap capacitors, CBOOT, for each phase. The bootstrap circuits are floated during operation, thus each half-bridge circuit needs one bootstrap circuit, and it is recommended to place CBOOT as close to the IC as possible (see figure 2). Robust Device Design HS Several built-in features allow the SCM1100M series to support a more dependable overall application. VB A built-in high-voltage bootstrap diode is built-in, simplifying trace layout on the application PCB by reducing component count, and eliminating the corresponding adequate creepage distance. An in-rush current-absorbing resistor provides built-in protection (STP) circuit against high-sde/low-side simultaneous on (shoot-through). In addition, employing a pre-driver for each half-bridge, prevents high/low simultaneous ON due to erroneous command signal input or external noise. The embedded pre-driver for each half-bridge ensures short input dead-time. This optimizes the switching speed of high/low sides, VBB HO UV VCC Input Detect HIN Logic Level LIN & Shift Drive Circuit U, V, or W Shoot Through Prevention UV Detect COM FO O .C . Drive LS Protect CFO LO Circuit HVIC Figure 2. SCM1100M Series Phase Block Diagram. These devices support three phases, referred to as U, V, and W. One of three phases is shown in the diagram. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 At the beginning of operation, during the startup period, this capacitor needs to be fully charged by turning on the low-side IGBT. The capacitance of the individual capacitors can be calculated by the following formulas, and whichever resulting capacitance value is larger should be chosen: CBOOT (μF) > 800 ×tLoff (s) , or CBOOT = 0.1 μF , where TLoff is the maximum off-period of the low-side IGBT, in seconds, corresponding to the non-charging period of CBOOT. The gate driver circuit consumes current even if the high-side IGBT is not on, and the voltage across CBOOT goes down. Therefore, make sure that that sufficient voltage is maintained across CBOOT during low frequency operation, such as the startup period. In addition, capacitance tolerance needs to be taken into account in selecting the CBOOT value, and it is strongly recommended to optimize the value of CBOOT through actual board tests to make sure UVLO circuits for VB1, VB2 and VB3 are not activated. HS1, HS2, and HS3. These pins are internally connected to the U, V, and W pins. The negative node of corresponding CBOOT is connected to the pin. VCC1, VCC2, and VCC3. These pins are logic supply inputs. To prevent malfunctioning of operation from ripple voltage on supply voltage input, it is recommended to place a ceramic capacitor (> 0.01 μF) as close to the pin as possible. COM1, COM2, and COM3. These are logic GND pins of the incorporated pre-driver chips. In order to drive and control the internal IGBTs properly, these should be connected as close to the LSx pins as possible. CBOOT VB VCC VBB Rboot VBB Dboot CBOOT U,V,W High Side & Low Side SCM1100 M 1 phase of 3 LS Figure 3. Bootstrap Circuit. Each of the three phases has an independent bootstrap circuit. The CBOOT circuit for one phase is shown above. HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3. These are gate driver control pins, and are 5 V CMOS compatible, with Schmitt trigger circuits. These are active high, and have internal pulldown 100 kW resistors. In case of high noise interference or unstable input logic status, it is recommended to use external filter circuits or additional pull-down resistors. The equivalent circuits are shown in figure 5. VBB1, VBB2, and VBB3. These are the main supply inputs. Place bypass capacitors and also film capacitors for snubber circuits of approximately 0.1 μF at each pin, in order to suppress surge voltage. In addition, it is recommended to shorten the PCB traces for those pins to a minimum. 25 33 Branded Side 24 1 Figure 4. SCM1100M Series Pin-out Diagram. The pin assignments are listed in the table below. Terminal List Table Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Number FO1 CFO1 LIN1 COM1 HIN1 VCC1 VB1 HS1 FO2 CFO2 LIN2 COM2 HIN2 VCC2 VB2 HS2 FO3 CFO3 LIN3 COM3 HIN3 VCC3 VB3 HS3 VBB W LS3 VBB V LS2 VBB U 33 LS1 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com Function U phase fault output for overcurrent and UVLO detected Capacitor for U phase overcurrent protection hold time Signal input for low-side U phase (active high) Supply ground for U phase IC Signal input for high-side U phase (active high) Supply voltage for U phase IC High-side floating supply voltage for U phase High-side floating supply ground for U phase V phase fault output for overcurrent and UVLO detected Capacitor for V phase overcurrent protection hold time Signal input for low-side V phase (active high) Supply ground for V phase IC Signal input for high-side V phase (active high) Supply voltage for V phase IC High-side floating supply voltage for V phase High-side floating supply ground for V phase W phase fault output for overcurrent and UVLO detected Capacitor for W phase overcurrent protection hold time Signal input for low-side W phase (active high) Supply ground for W phase IC Signal input for high-side W phase (active high) Supply voltage for W phase IC High-side floating supply voltage for W phase High-side floating supply ground for W phase Positive DC bus supply voltage Output for W phase Negative DC bus supply ground for W phase Cut-pin ( positive DC bus supply voltage) Output for V phase Negative DC bus supply ground for V phase Cut-pin ( positive DC bus supply voltage) Output for U phase Negative DC bus supply ground for U phase 3 LS1, LS2, and LS3. These are inverter GND terminals and a shunt resistor for monitoring current should be placed between those pins and the COM pins. Trace length between the correpsonding current sensing resistor and LSx pin should be as short as possible, otherwise, malfunctioning may occur. CFO1, CFO2, and CFO3. In the event of the overcurrent protection enabling, both high- and low-side drivers are turned off. The overcurrent protection off-time period is adjusted by the external capacitors at those pins. See the Protection Circuits section for more details. FO. This pin is pulled down in the event of the protection circuits enabling; UVLO, OCP, or STP (Simultaneous high- and low-side turning on) being activated; or both high- and low-side IGBTs being turned off. Figure 6 shows the internal circuit of the FO pin, which must be pulled-up by an external pull-up resistor because of the open drain structure. The sink current is limited to 5 mA. In addition, the FO pin potential is monitored by the internal circuit and when its potential is pulled down externally, it shuts off the circuit. Therefore, by tying the three FO pins together, it can shut off all phases if even one of the phase protection circuits is activated. It is recommended to place a capacitor CN (<0.01 μF) near those pins to prevent malfunctioning from noise interference. 5V HIN LIN 2 kΩ Protection Circuits This section describes the various protection cricuits provided in the SCM1100M series. Undervoltage Lockout (UVLO). The UVLO circuit is integrated to protect the IGBT from being driven by low gate driving voltage due to insufficient main supply voltage of the gate driver circuit. The UVLO circuit timing chart is shown in figure 7. When the boot voltage (between VB and VS) becomes less than UVHL, the high-side IGBT turns off. However, the FO pin is not pulled down. After that, when the boot voltage returns to the normal operating voltage range, it automatically restarts at the first rising edge of the control input signal. When VCC voltage becomes less than UVLL threshold, both high- and low-side IGBTs are turned off, and the FO pin is pulled down. After it recovers to the normal operating voltage, FO is raised by the pull-up resistor, and the IGBT is turned on at the next rising edge of each corresponding input. Simultaneous High- and Low-Side On Protection (STP). This circuit protects the high- and low-side IGBTs against the event of both the low- and high-side inputs being high, or a malfunction turning on both IGBTs because of noise interference. In that case, the FO pin is pulled down. Overcurrent Protection (OCP). The overcurrent protection circuit monitors the voltage across the external current sensing resistor, and when it reaches the threshold voltage of 0.5 V (VTRIP) and remains there longer than 2 μs, OCP shuts off both high- and low-side IGBTs. The OCP timing is shown in figure 8. It is possible to adjust the off-time duration by an external capacitor at the CFO pin (see figure 9 for the circuit at the CFO pin, and figure 10 for timing effects). In that case, the current sensing resistor is dedicated to its respective output, and if only 100 kΩ COM Hside- Driver I/O Timing Diagrams Figure 5. Logic Inputs. The HIN and LIN internal equivalent circuits are illustrated. 5V HIN LIN UVHL VB- HS FO UVHH * Start from positive edge after UVLO release . HO 2 kΩ LO FO * No output at H-side UVLO *VCC = 15 V COM Figure 6. Fault Circuit Inputs. The internal circuits of the FO pins are illustrated. Figure 7. Undervoltage Protection (UVLO) timing diagram. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 4 one of them is activated, only the corresponding phase circuit is turned off. During the off-time period, the FO pin remains low, and the phase circuit remains off, regardless of any input signals to the HIN and LIN pins. The OCP circuit is integrated in each phase circuit, and protects each phase circuit individually. However; as explained before, by tying the FO pins together, it is possible to shut off all phase circuits when one of the phases’ OCP circuit is activated. See the Application Circuit section for more details. After being shutoff by OCP, and the CFO duration is passed, FO is pulled-up by the external resistor, and the IGBTs are enabled for activattion, but it only occurs at the rising edge of the HIN and LIN inputs. The value for the shunt (current sensing) resistor, RS , can be calculated as follows: RS (Ω) = 0.5 V / ITRIP(typ.) A – 0.0035 , where 0.0035 is the SCM1100 internal wiring resistance. For example, if ITRIP(typ.) = 10 A, then 0.5 V /10 A – 0.0035 = 0.0465 Ω . Note: The formula above does not include any parasitic resistance of the PCB traces. It is recommended to use a less than 10 nF capacitor, otherwise, the formulas above are not applicable. Precautions Power-up Sequence. Make sure proper VCC voltage is secured before applying logic high to HIN and LIN. When powering down, apply logic low to all HIN and LIN pins, and then turn off VCC. Short Circuit. Output short circuit (load short, short to GND) protection is not integrated, therefore; make sure such conditions are not applied to the IC. PCB Trace Length. Circuit traces around the IC should be as short as possible. If the lengths are long, it may cause not only malfunctioning, but also IC breakdown because of surge voltage resulting from parasitic inductance of the traces. Surge Voltage. Surge voltage superimposed on the inputs should be suppressed by capacitors. Otherwise, it could cause malfunctioning or IC breakdown in worst case scenarios. The OCP off-time setting capacitors can be configured as either one common capacitor for all three CFOx pins, or as a separate capacitor for each CFOx pin. The value for each configuration can be calculated as follows, 5V 2 μA for one common capacitor: CFO 20Ω toff(min) = tmin ms = 0.31 × CFO nF , and for three individual capacitors: COM toff(min) = tmin ms = 0.93 × CFO nF . 2 kΩ FO Overcurrent Protection Figure 9. Overcurrent Protection (OCP) timing diagram. LIN IGBT turns off softly after overcurrent condition is detected VB- HS VCC 1.5 )2 TA = 25°C 1.0 .) (Typ arate (Min.) rate Sepa Sep 'XUDWLRQ LS PV BlankingTime (2 μs typ.) 0.5 Common (Typ.) ) Common (Min. FO CFO 0 Vrc (3.5 V typ.) &)2Q) The slope depends on OCP Assist Timer CFO capacitance (2 μs min.) * Off operation of all phases can be done by wired OR system with the three FO pins short circuited Figure 8. Overcurrent Protection (OCP) timing diagram. Figure 10. CFO Off-Time Duration versus CFO Capacitance. Shown for common and separate capacitor configurations. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 5 Input Dead-Time. Ensure a dead time between high- and low-side turn on and turn off to avoid simultaneous current flow through the high- and low-side IGBTs. It is recommended that the dead time be longer than 2 μs. The IC itself does not have an integrated dead time circuit. HS1 Application Circuit The following diagram applies for a common current sensing shunt resistor for the three phases. SCM 1106 M 8 CBOOT1 7 31 VBB 32 U VB1 VCC1 6 HIN1 5 LIN1 3 4 FO1 1 HS2 & Shoot Through Prevention COM1 CFO1 Input Logic UV Detect Level Shift HO Drive Circuit UV Detect O.C. Protect 2 Drive LO Circuit 33 LS1 HVIC 1 16 CBOOT2 15 28 VBB 29 V VB2 VCC2 C o n t r o lle r HIN2 LIN2 COM2 FO2 CFO2 HS3 14 13 11 HO UV Input Logic & Shoot Through Prevention 12 9 Detect Level Shift UV Detect O.C. Protect 10 Drive Circuit Drive Circuit M LO 30 LS2 HVIC 2 24 CBOOT3 25 23 VBB VB3 VCC3 22 HIN3 21 LIN3 19 VFO COM3 RFO CN & Shoot Through Prevention 20 FO3 17 CFO3 Input Logic 18 UV Detect Level Shift HO Drive Circuit 26 W UV Detect O.C. Protect Drive LO Circuit VBB 27 LS3 HVIC 3 VCC RS CFO Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 6 Characteristic Performance Data The following data is applicable to all of the SCM1100M series. SCM1100M ICC-Tj(3 phase) 1 VCC=15 V MAX 6 TYP MIN 4 VB-HS=15V 80 Iboot[μA] 8 ICC[mA] SCM1100M IBoot-Tj(Single phase) 100 2 MAX 60 TYP MIN 40 20 0 0 0 -25 2 5 7 Tj[°C] 10 12 15 -25 0 IN=5V IIN[μA] 80 TYP 60 MIN 40 20 0 25 50 75 Tj[°C] 100 125 3 0 -25 150 0 25 50 75 100 4 4 3 MAX TYP MIN 2 3 MAX 2 TYP MIN 1 1 50 75 150 SCM1100M VIL-Tj 5 25 125 Tj[°C] VINL[V] VINH[V] 15 1 SCM1100M VIH-Tj 0 12 MAX TYP MIN 2 5 0 -25 10 4 MAX 100 0 -25 7 Tj[°C] 5 BlankTime[μs] 120 5 SCM1100M tbk(BlankTime)-Tj SCM1100M IIN-Tj 140 2 100 125 150 0 -25 0 25 50 75 100 125 150 Tj[°C] Tj[°C] Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 7 Characteristic Performance Data (continued) The following data is applicable to all of the SCM1100M series. 6&0089+/+6UHOHDVH7M MAX TYP MIN 7M>°C@ 6&0089///6UHOHDVH7M MAX TYP MIN 89/2UHOHDVH>9@ 89/2UHOHDVH>9@ MAX TYP MIN 7M>°C@ 6&0089/+DFWLYH 7M MAX TYP MIN 7M>°C@ 6&00)2GXUDWLRQ7M&)2 Q)VLQJOH 7M>°C@ 6&00)2GXUDWLRQ7M&)2 Q)FRPPRQ MAX TYP MIN )2GXUDWLRQ>PV@ )2GXUDWLRQ>PV@ 6&0089+++67M 89/2>9@ 89/2UHOHDVH>9@ MAX TYP MIN 7M>°C@ Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 7M>°C@ 8 Output Characteristic Performance Data The following data is applicable to the SCM1101M or SCM1101MF, 10 A device. IGBT and FRD DC Characteristics Forward Voltage versus Forward Current VCE(sat) versus Supply Current 2.5 VGE = 15 V 2 2 1.5 1.5 Vf (V) VCE(sat) (V) 2.5 1 75°C Tj=25°C 0.5 125°C 1 75°C 125°C 0.5 TJ = 25°C 0 0 0 1 2 3 4 5 IC (A) 6 7 8 9 0 10 1 2 3 4 5 If (A) 6 7 8 9 10 9 10 11 9 10 11 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current High-side Eon, Eoff versus Supply Current 500 VBB = 300 V,VB = 15 V Inductive load 400 VBB = 300 V, VCC=15 V Inductive load 400 Eoff 300 200 E (μJ) E (μJ) 500 Eon 100 Eoff 300 200 Eon 100 0 0 0 1 2 3 4 5 6 IC (A) 7 8 9 10 0 11 1 2 3 4 5 6 IC (A) 7 8 High-side Eon,Eoff versus Supply Current 900 800 700 600 500 400 300 200 100 0 VBB= 300 V,VB = 15 V Inductive load Eoff E (μJ) E (μJ) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) Eon 0 1 2 3 4 5 6 IC (A) 7 8 9 10 11 Low-side Eon, Eoff versus Supply Current 900 800 700 600 500 400 300 200 100 0 VBB = 300 V, VCC = 15 V Inductive load Eoff Eon 0 1 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 3 4 5 6 IC (A) 7 8 9 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1103M, 5 A device. IGBT and FRD DC Characteristics VCE(sat) versus Supply Current Forward Voltage versus Forward Current 2.5 VGE = 15 V 2 2 1.5 1.5 Vf (A) VCE(sat) (V) 2.5 1 125°C 75°C TJ = 25°C 0.5 1 75°C 125°C 0.5 0 TJ = 25°C 0 0 0.5 1 1.5 2 2.5 IC (A) 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 If (A) 3 3.5 4 4.5 5 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) High-side Eon, Eoff versus Supply Current Low-side Eon, Eoff versus Supply Current 300 VBB = 300 V, VB = 15 V Inductive load 200 E (μJ) E (μJ) 300 Eoff VBB = 300 V, VCC = 15 V Inductive load 200 100 100 Eoff Eoff Eon 0 0 0 1 2 3 IC (A) 4 5 0 6 1 2 3 IC (A) 4 5 6 Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon, Eoff versus Supply Current 400 300 VBB = 300 V,VCC = 15 V Inductive load 300 Eoff Eoff E (μJ) E (μJ) Low-side Eon, Eoff versus Supply Current 400 VBB = 300 V,VB =15 V Inductive load 200 Eon Eon 100 200 100 0 0 0 1 2 3 IC (A) 4 5 6 0 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 1 2 3 IC (A) 4 5 6 10 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1104M or SCM1104MF, 8 A device. IGBT and FRD DC Characteristics Forward Voltage versus Forward Current VCE(sat) versus Supply Current 2.5 2.5 VGE =15 V 2 1.5 1.5 Vf (V) VCE(sat) (V) 2 1 125°C 75°C TJ = 25°C 0.5 1 T = 25°C 75°C J 125°C 0.5 0 0 0 2 4 IC (A) 6 8 0 2 4 If (A) 6 8 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) High-side Eon, Eoff versus Supply Current 400 VBB = 300 V, VB=15 V Inductive load VBB = 300 V, VCC = 15 V Inductive load 300 Eoff E (μJ) E (μJ) 300 Low-side Eon, Eoff versus Supply Current 400 200 Eon 100 200 Eon Eoff 100 0 0 0 1 2 3 4 5 6 7 8 0 9 1 2 3 IC (A) 4 5 IC (A) 6 7 8 9 8 9 Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon, Eoff versus Supply Current 600 500 400 Eoff 300 VBB= 300 V, VCC = 15 V Inductive load 500 200 E (μJ) E (μJ) 400 Low-side Eon,Eoff versus Supply Current 600 VBB = 300 V, VB =15 V Inductive load 200 Eon 100 300 Eoff Eon 100 0 0 0 1 2 3 4 5 IC ( A) 6 7 8 9 0 1 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 3 4 5 IC (A) 6 7 11 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1105MF, 15 A device. IGBT and FRD DC Characteristics VCE(sat) versus Supply Current Forward Voltage versus Forward Current 2.5 2.5 VGE = 15 V 2 1.5 Vf (V) VCE(sat) (V) 2 1 125°C 75°C 0.5 1.5 1 75°C 125°C 0.5 TJ = 25°C 0 Tj=25°C 0 0 1 2 3 4 5 6 7 8 IC (A) 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 If (A) 9 10 11 12 13 14 15 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) High-side Eon, Eoff versus Supply Current 700 E (μJ) 500 500 Eoff 400 VBB = 300 V, VCC =15 V Inductive load 600 Eon 300 E (μJ) 600 Low-side Eon, Eoff versus Supply Current 700 VBB = 300 V,VB =15 V Inductive load 400 200 200 100 100 0 Eoff 300 Eon 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC ( A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) 1400 VBB = 300 V, VB =15 V 1200 Inductive load 1000 600 Eon 400 Inductive load 1000 Eoff 800 VBB= 300 V, VCC = 15 V 1200 E (μJ) E (μJ) Low-side Eon, Eoff versus Supply Current High-side Eon, Eoff versus Supply Current 1400 200 Eoff 800 600 Eon 400 200 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) 0 1 2 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) 12 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1106M and SCM1106MF, 10 A device. IGBT and FRD DC Characteristics VCE(sat) versus Supply Current Forward Voltage versus Forward Current 2.5 VCE(sat) (V) 2 2.5 VGE = 15 V 2 1.5 Vf (V) 1.5 125°C 75°C 1 TJ= 25°C 0.5 1 75°C 125°C 0.5 0 TJ = 25°C 0 0 2 4 6 IC (A) 8 10 0 2 4 If (A) 6 8 10 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current High-side Eon, Eoff versus Supply Current 400 VBB = 300 V,VB =15 V Inductive load VBB = 300 V,VB =15 V Inductive load 300 200 E (μJ) 300 E (μJ) 400 Eon 100 Eon 200 Eoff 100 Eoff 0 0 0 1 2 3 4 5 6 IC (A) 7 8 9 10 11 0 1 2 3 4 5 6 7 8 9 10 11 10 11 IC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon, Eoff versus Supply Current Low-side Eon, Eoff versus Supply Current 600 600 VBB = 300 V,VB =15 V Inductive load 500 400 300 E (μJ) 400 E (μJ) VBB = 300 V,VB =15 V Inductive load 500 Eon 200 Eon 300 200 Eoff 100 Eoff 100 0 0 0 1 2 3 4 5 6 IC (A) 7 8 9 10 11 0 1 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 3 4 5 6 7 8 9 IC (A) 13 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1110MF, 15 A device. IGBT and FRD DC Characteristics Vf versus If VCE(sat) versus Supply Current 2.5 2.5 VGE= 15 V 2 1.5 1.5 Vf (V) VCE(sat) (V) 2 125°C 75°C 1 TJ = 25°C 0.5 1 75°C 125°C 0.5 TJ = 25°C 0 0 0 1 2 3 4 5 6 7 8 IC (A) 0 9 10 11 12 13 14 15 1 2 3 4 5 6 7 8 If (A) 9 10 11 12 13 14 15 Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current High-side Eon, Eoff versus Supply Current 700 700 VBB = 300 V,VB =15 V Inductive load 600 500 500 E (μJ) E (μJ) VBB = 300 V,VB =15 V Inductive load 600 400 300 Eon 200 300 Eoff 200 Eoff 100 Eon 400 100 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) IC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon, Eoff versus Supply Current E (μJ) 800 600 VBB = 300 V,VB =15 V Inductive load VBB = 300 V,VB =15 V Inductive load 800 Eoff 400 200 Low-side Eon, Eoff versus Supply Current 1000 E (μJ) 1000 Eon 600 Eon 400 Eoff 200 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) 0 1 2 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IC (A) 14 The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Anti radioactive ray design is not considered for the products listed herein. Copyright ©2007-2009 Allegro MicroSystems, Inc. Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 15