Application Information SCM1240M Series High Voltage 3 Phase Motor Drivers Introduction The SCM1240M is a high voltage three-phase motor driver IC for 100 to 200 VAC input, middle output power motor driver systems. IGBTs, diodes, and controller ICs are all housed in the proprietary SCM package (figure 1), and the protection circuits enhance system-level reliability. Features and benefits include the following: ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the other ▪ Protection against simultaneous high- and low-side turn-on (shoot-through protection, STP) ▪ Bootstrap diodes with series resistors for suppressing inrush current are incorporated ▪ Integrated Fast Recovery Diode (FRD) as freewheeling diode for each IGBT ▪ CMOS compatible input (3.3 to 5 V) ▪ Optimized gate drive resistors ▪ UVLO protection with auto restart ▪ Overcurrent protection with off-time period adjustable by an external capacitor ▪ Thermal Shutdown (TSD) with auto restart ▪ Fault (FO indicator) signal output at protection activation: UVLO (low side only), OCP, TSD, and STP ▪ Three F̄¯¯Ō¯ pins can be tied together to shut down all IGBTs ▪ Proprietary power DIP package, internal soldering and leadframe plating lead (Pb) free ▪ 2000 V / 1 min isolation voltage tolerance ▪ UL Recognized Component (File No.: E118037) Energy-Conserving Technology Figure 1. SCM1240M Series packages are fully molded DIPs, For 15 to 30 A (suffix F) variants, a copper pad for heatsink mounting is attached to the upper surface of the case (left); for 10 A devices, the standard case is available (right). Contents Introduction 1 Energy-Conserving Technology 1 Rapid Redesign Support 2 Simplified Design for Application Circuits 2 Robust Device Design 2 Internal Structure 2 Pin Functional Descriptions 4 Protection Circuits 5 Absolute Maximum Rating and Recommended Condition of Use 10 Application Circuit 11 Characteristic Performance Data 13 Output Characteristic Performance Data 18 The SCM1240M series is one of the expanding IPM product lines being offered by the Sanken Electric Company. IPM Continued on the next page… The product lineup for the SCM1240M series provides the following options for motor driving applications: IGBT Rating SCM1240MF-AN, Rev. 5 Part Number (V) (A) VCE(sat) (V) RBOOT (Ω Typical) SCM1241M 600 10 1.7 22 Fully molded SCM1243MF 600 15 1.7 22 Copper heatsink pad SCM1245MF 600 20 1.7 22 Copper heatsink pad SCM1246MF 600 30 1.7 22 Copper heatsink pad Package SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/ stands for Inverter Power Module, a technology that has now become prominent in the marketplace, and for Sanken, it highlights a broad variety of high voltage, three-phase motor driver ICs targeted at the residential white goods (home appliance) and commercial three-phase motor market segments, such as: air conditioners, refrigerators, and washing machines. other designer-friendly features, the SCM1240M series allows a highly reliable inverter main circuit to be designed using only a small number of external components. Sanken IPM devices are particularly well-suited to applications in variable speed control systems and power inverter systems. Sanken has developed a great deal of expertise in these markets, which have become mature in certain areas due to governmental regulations, and are emerging in many other marketplaces. Demand for these applications is expected to increase rapidly in the near future, due to commercial economic pressures and governmental regulations mandating the use of energy-conserving technologies. Several built-in features allow the SCM1240M series to support a more dependable overall application. Rapid Redesign Support IPM type ICs are gradually becoming prevalent for controlling motors in residential and commercial laundry washing machines. In this application, the ICs replace several discrete components, thus saving application space and design effort. In many instances, IPM devices yield the lowest overall cost solution, especially in the current regulatory environment, which is forcing manufacturers to redesign their power management systems. Traditional discrete-device topologies are proving difficult to adapt to these applications, and manufacturers can take advantage of rapid design solutions using the highly integrated topologies offered by IPM types of devices. Sanken Electric IPMs optimally fulfill such market needs with products that integrate our latest technologies inside a single package. Simplified Design for Application Circuits The SCM1240M series supports the 3-shunt method, in which a shunt resistor is used in each phase. This enables small currents to be detected, and highly accurate inverter control to be achieved, thus contributing to low motor noise. In addition, each of the three phases contains an overcurrent protection circuit, and a function that prevents simultaneous turn-on of both the highside and low-side IGBTs. Overall, use of the SCM1240M series with the 3-shunt method allows a 15% reduction in the area of the application print circuit board used for the main circuit of the inverter, and a reduction in the quantity of components of about 50%. With these and many SCM1240MF-AN, Rev. 5 Robust Device Design A built-in high-voltage bootstrap diode is built-in, simplifying trace layout on the application PCB by reducing component count, and eliminating the corresponding adequate creepage distance. An in-rush current-absorbing resistor provides built-in protection (STP) circuit against high-side/low-side simultaneous on (shoot-through). In addition, employing a pre-driver for each half-bridge, prevents high/low simultaneous ON due to erroneous command signal input or external noise. The embedded pre-driver for each half-bridge ensures short input dead-time. This optimizes the switching speed of high/low sides, allowing stable control to be achieved. It also avoids consecutive short-circuits when OCP protection mode is released. All three drive phases can be simultaneously brought to a complete stop (all three gates turned off) during protection modes. This can be implemented by connecting the 3 failure signal output terminals externally. The F̄¯¯Ō¯ terminal is also used as an enable input. Failure signal output continues during protection modes: CMOS logic circuit operation continues, as well as UVLO during OCP and STP modes. Internal Structure A cross-section view of an SCM1240 series package is shown in figure 3. The heatsink-mounting pad is exposed, and internally it is isolated by isolation resin. The Cu leadframe is encapsulated by the isolation resin. On the top of the PCB structure, the individual die for the IGBTs, fast-recovery diodes (FRD), boot diodes, and Gate Driver IC (monolithic IC) are mounted by soldering. Each die is connected with Al or Au wire, and the resistors and capacitors are connected with Cu traces. Furthermore, the leadframe is connected by soldering. The isolation resin between the Cu heatsink pad and the leadframe has a specification of 2000 V / 1 min. All solders used for in the SCM1240M series, including internal solder and leadframe solder, are Pb-free. SANKEN ELECTRIC CO., LTD. 2 One of three phases SCM1240M VB VBB HS RB BootDi UV Detect VCC HIN Input Logic LIN COM UV Detect Level Shift FRD Drive Circuit U,V,W Drive Circuit STP FO OCP MIC O.C. Protect Thermal Protect FRD LS Figure 2. SCM1240M Series Phase Block Diagram. These devices support three phases, referred to as U, V, and W. One of three phases is shown in the diagram. SCM1240MF-AN, Rev. 5 SANKEN ELECTRIC CO., LTD. 3 Pin Functional Descriptions This section describes the features of the SCM1240M devices in order by pin function. Refer to figure 2 for a block diagram of the devices. strongly recommended to optimize the value of CBOOT through actual board tests to make sure UVLO circuits for VB1, VB2 and VB3 are not activated. HS1, HS2, and HS3. These pins are internally connected to the U, V, and W pins. The negative node of corresponding CBOOT is connected to the pin. U, V, and W. These pins are the outputs of the individual IC phases, and serve as the connection terminals to the 3 phase motor VCC1, VCC2, and VCC3. These pins are logic supply inputs. that is being driven. To prevent malfunctioning of operation from ripple voltage VB1, VB2, and VB3. Circuit main supply inputs that drive on supply voltage input, it is recommended to place a ceramic high-side IGBTs. Serve as terminals for the bootstrap capacitors, capacitor (> 0.01 μF) as close as possible to each of VCCx and CBOOT, for each phase. The bootstrap circuits are floated during COMx pins. operation, thus each half-bridge circuit needs one bootstrap circuit, and it is recommended to place CBOOT as close to the IC 25 33 as possible (see figure 3). At the beginning of operation, during the startup period, this capacitor needs to be fully charged by turning on the low-side IGBT. The capacitance of the individual capacitors can be calculated by the following formulas, and whichever resulting capacitance value is larger should be chosen: CBOOT (μF) > 800 ×tLoff (s) , CBOOT ≥ 1 μF , where TLoff is the maximum off-period of the low-side IGBT, in seconds, corresponding to the non-charging period of CBOOT. The resistance value of the bootstrap resistors is 22 Ω ±20% (optional: 60 Ω ±20% or 210 Ω ±20%). The gate driver circuit consumes current even if the high-side IGBT is not on, and the voltage across CBOOT goes down. Therefore, make sure that that sufficient voltage is maintained across CBOOT during low frequency operation, such as the startup period. In addition, capacitance tolerance needs to be taken into account in selecting the CBOOT value, and it is CBOOT VCC VBB RBOOT VBB DBOOT CBOOT High-Side and Low-Side Driver Circuit SCM1240 M(F) 1 phase of 3 U,V,W LS Figure 3. Bootstrap Circuit. Each of the three phases has an independent bootstrap circuit. The CBOOT circuit for one phase is shown above. SCM1240MF-AN, Rev. 5 24 1 Figure 4. SCM1240M Series Pin-out Diagram. The pin assignments are listed in the table below. or VB Branded Side Terminal List Table Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Number ¯¯Ō ¯1̄¯ F̄ OCP1 LIN1 COM1 HIN1 VCC1 VB1 HS1 ¯¯Ō ¯2̄¯ F̄ OCP2 LIN2 COM2 HIN2 VCC2 VB2 HS2 ¯¯Ō ¯3̄¯ F̄ OCP3 LIN3 COM3 HIN3 VCC3 VB3 HS3 VBB W LS3 VBB V LS2 VBB U 33 LS1 SANKEN ELECTRIC CO., LTD. Function U phase fault output for OCP, STP, and UVLO detected Reference voltage input for U phase OCP Signal input for low-side U phase (active high) Supply ground for U phase IC Signal input for high-side U phase (active high) Supply voltage for U phase IC High-side floating supply voltage for U phase High-side floating supply ground for U phase V phase fault output for OCP, STP, and UVLO detected Reference voltage input for V phase OCP Signal input for low-side V phase (active high) Supply ground for V phase IC Signal input for high-side V phase (active high) Supply voltage for V phase IC High-side floating supply voltage for V phase High-side floating supply ground for V phase W phase fault output for OCP, STP, and UVLO detected Reference voltage input for W phase OCP Signal input for low-side W phase (active high) Supply ground for W phase IC Signal input for high-side W phase (active high) Supply voltage for W phase IC High-side floating supply voltage for W phase High-side floating supply ground for W phase Positive DC bus supply voltage Output for W phase Negative DC bus supply ground for W phase (Pin trimmed) positive DC bus supply voltage Output for V phase Negative DC bus supply ground for V phase (Pin trimmed) positive DC bus supply voltage Output for U phase Negative DC bus supply ground for U phase 4 COM1, COM2, and COM3. These are logic GND pins of the incorporated pre-driver chips. In order to drive and control the internal IGBTs properly, these should be connected as close to the LSx pins as possible. HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3. These are gate driver control pins, and are 5 V CMOS compatible, with Schmitt trigger circuits. These are active high, and have internal pulldown 22 kΩ resistors. In case of high noise interference or unstable input logic status, it is recommended to use external filter circuits or additional pull-down resistors. The equivalent circuits are shown in figure 6. VBB1, VBB2, and VBB3. These are the main supply inputs. Place bypass capacitors and also film capacitors for snubber circuits of approximately 0.1 μF at each pin, in order to suppress surge voltage. In addition, it is recommended to shorten the PCB traces for those pins to a minimum. LS1, LS2, and LS3. These are inverter GND terminals and a shunt resistor for monitoring current should be placed between those pins and the COM pins. Trace length between the correpsonding current sensing resistor and LSx pin should be as short as possible, otherwise, malfunctioning may occur. OCP1, OCP2, and OCP3. Each OCP pin provides the reference voltage to an input of a comparator. The equivalent circuit diagram is shown in figure 6. 5V COM Figure 5. Logic Inputs. The HIN and LIN internal equivalent circuits are illustrated. 2kǡ 2kǡ 200kǡ Vref Blanking + Comparator Filter Gate OFF & FO MOSFET ON Figure 7 shows the internal circuit of the F̄¯¯Ō¯ pin, which must be pulled-up by an external pull-up resistor because of the open drain structure. The sink current is limited to 5 mA. In addition, the F̄¯¯Ō¯ pin potential is monitored by the internal circuit and when its potential is pulled down externally, it shuts off the circuit. Therefore, by tying the three F̄¯¯Ō¯ pins together, it can shut off all phases if even one of the phase protection circuits is activated. It is recommended to place a capacitor CN (<0.01 μF) near those pins to prevent malfunctioning from noise interference. Protection Circuits When the boot voltage (between VB and VS) becomes less than UVHL, the high-side IGBT turns off. However, the F̄¯¯Ō¯ pin is not FO 1.65us(typ) Gate OFF & FO MOSFET ON 2kǡ 2kǡ 50ǡ Blanking Filter 3.0us(typ) COM COM Figure 6. OCP circuit Inputs. The internal circuits of the OCPx pins are illustrated. SCM1240MF-AN, Rev. 5 ¯¯Ō ¯. This pin is pulled down in the event of the protection cirF̄ cuits enabling; low-side UVLO, OCP, TSD, or STP (simultaneous high- and low-side turning on) being activated; or both high- and low-side IGBTs being turned off. Undervoltage Lockout (UVLO). The UVLO circuit is integrated to protect the IGBT from being driven by low gate driving voltage due to insufficient main supply voltage of the gate driver circuit. The UVLO circuit timing chart is shown in figure 8. 22 kΩ OCP After the gates are driven to low, the current through these IGBTs reduces and this overcurrent condition no longer persists. However, the F̄¯¯Ō¯ pin stays asserted for a constant period (20 μs (min)) then returns to normal operation from the OCP condition. Note: Because the OCP function is a secondary protection, the primary protection of using the F̄¯¯Ō¯ pin to stop the SCM1240M by the application microcontroller should be taken into consideration. This section describes the various protection cricuits provided in the SCM1240M series. 2 kΩ HIN LIN There is a 200 kΩ pull-down resistor. When the input voltage exceeds VTRIP for more than 1.65 μs (typ), the OCP function is enabled: two gates of the high and low side IGBTs shut down and the internal MOSFET of the FO block is turned on to drive the F̄¯¯Ō¯ pin to low. Figure 7. Fault Circuit Inputs. The internal circuits of the FO pins are illustrated. SANKEN ELECTRIC CO., LTD. 5 pulled down. After that, when the boot voltage becomes more than UVLH, it automatically restarts at the first rising edge of the control input signal. When VCC voltage becomes less than UVLL threshold, both high- and low-side IGBTs are turned off, and the F̄¯¯Ō¯ pin is pulled down. After it becomes more than UVLH, F̄¯¯Ō¯ is raised by the pull-up resistor, and the IGBT is turned on at the next rising edge of each corresponding input. Simultaneous High- and Low-Side On Protection (Shoot-through protection, STP) This circuit protects the high- and low-side IGBTs against the event of both the low- and high-side inputs being high, or a malfunction turning on both IGBTs simultaneously because of noise interference. During the time when both the low- and high-side inputs are high, the IGBTs on both sides are shut down. After recovering from a simultaneous-on state, the IC auto restarts, and the IGBT output turns on/off in accordance with HIN and LIN commands (see Shoot Through Prevention HIN High-side Driver I/O Timing Diagrams LIN HIN VCC VB- HS LIN UVHL UVHH VB- HS * Start from positive edge after UVLO release HO LO HO FO HIN and LIN are the paired inputs for a single phase LO FO * VCC * No output at High-side UVLO = 15 V The open-collector transistor is on while FO = Low Figure 9. Shoot-Through Prevention (STP) timing diagram. Low-side Driver I/O Timing Diagrams LIN Overcurrent Protection HIN HIN VCCCOM UVLL UVLH * Start from positive edge after UVLO release . LO LIN HO and LO resume after OCP is released HO HO LO FO * No output at High- side UVLO * VB-HS = 15 V VTRIP (0.5 V Typ.) Figure 8. Undervoltage Protection (UVLO) timing diagrams. LS Blanking Time (1.65 μs typ.) OCP Hold Time (20 μs min.) FO * Off operation of all phases can be done by wired OR system (three FO pins short circuited) Figure 10. Overcurrent Protection (OCP) timing diagram. SCM1240MF-AN, Rev. 5 SANKEN ELECTRIC CO., LTD. 6 figure 9). Note that STP does not have a dead-time programming circuit. A 1.0 μs dead time, implemented with an external circuit is required. Overcurrent Protection (OCP). The overcurrent protection circuit monitors the voltage across the external current sensing resistor, and when it reaches the threshold voltage of 0.5 V (VTRIP) and remains there longer than 1.65 μs (typ), OCP shuts off both high- and low-side IGBTs. The OCP hold time is 20 μs that turns off the high- and low-side IGBTs and drives the F̄¯¯Ō¯ terminal low. The OCP timing is shown in figure 10. Overheating Protection (TSD) A thermal shutdown (TSD) protection circuit is built-in for the SCM1240M series. In the event of overheating, such as due to increased power consumption or an increase in the ambient temperature at the device, the power IGBTs are shut down. Thermal detection is monitored by the SCM1240 controller chip (MIC). The shut-down temperature and back-up temperature are shown in the following table. Thermal Protection Range °C Min. Typ. Max. TDH 135 150 165 TDL 105 120 135 THYS – 30 – When the temperature of the MIC exceeds 150°C (typ), the MIC shuts down the IGBTs, and when the temperature decreases below 120°C, the shut-down condition is released and the IGBTs will start operating according to the IN signals. The thermal detection circuit monitors the temperature of the MIC. Both the high and low side IGBTs are shut down when the temperature increases more than TDH, and drives the F̄¯¯Ō¯ pin (open drain MOSFET) on. Because each of thermal detection circuits of the three MICs are independently functioning, it is recommended to connect the three F̄¯¯Ō¯ pins together for shutting down six IGBTs simultaneously. HIN LIN Tmic TDH TDL HO LO FO Figure 11. Thermal Shutdown Timing Diagram SCM1240MF-AN, Rev. 5 SANKEN ELECTRIC CO., LTD. 7 Note: Because the temperatures of the power IGBTs themselves are not monitored for overtemperature conditions, the internal protection function on its own may not be sufficient to prevent damage to the device due to overheating. It also should be noted that if the temperatures of the IGBTs rise very rapidly, the overtemperature detection function may lag. Furthermore, if monitoring temperature with the system microcontroller and shutting down the gate with an error signal from the microcontroller, the open-drained FOx pins should be connected to an interrupt pin of the application microcontroller. Precautions Power-up Sequence. Make sure proper VCC voltage is secured before applying logic high to HIN and LIN. When powering down, apply logic low to all HIN and LIN pins, and then turn off VCC. Short Circuit. Output short circuit (load short, short to GND) protection is not integrated, therefore; make sure such conditions are not applied to the IC. PCB Trace Length. Circuit traces around the IC should be as short as possible. If the lengths are long, especially between the LSx and COM terminals, it may cause not only malfunctioning, but also IC breakdown because of surge voltage resulting from parasitic inductance of the traces. Surge Voltage. Surge voltage superimposed on the inputs should be suppressed by be suppressed by RC filters and Zener diodes. Otherwise, it could cause malfunctioning or IC breakdown in worst case scenarios. Mounting a 0.01 to 0.1 μF ceramic capacitor between the VCC and COM pins and also between the VB and high-side (U, V, W) pins is recommended to prevent improper operation from surge voltage. If the logic power supply, VCC , changes rapidly due to surge voltage superimposed on the circuits between the VCC and COM pins and between the VB and high-side (U, V, W) pins, the IC may have malfunctions (see figures 12 and 13). In particular, if the power supply decrease occurs at a frequency shorter than that of the waveforms, there is a possibility that IC will remain on constantly, because a reset signal would not be transmitted after the level shift. VB S Set HIN (Inverted waveform) Input Logic Pulse Generator Reset COM Figure 12. High-side level shift circuit structure SCM1240MF-AN, Rev. 5 Q To HO R HIN (Inverted waveform) Set Reset High S VB - High Side (U,V,W) 0V HO Figure 13. A malfunction waveform showing superimposed VB to high-side noise SANKEN ELECTRIC CO., LTD. 8 Input Dead-Time. Ensure a dead time between high- and low-side turn on and turn off to avoid simultaneous current flow through the high- and low-side IGBTs. It is recommended that the dead time be longer than 2 μs. The IC itself does not have an integrated dead time circuit. There is a possibility that the IC will remain on constantly due to transmission signal oscillation error if the voltage between the VB and high-side (U,V,W) pins is lowered during a reset pulse. The noise level increases if the traces are too long between an external MCU or controller IC and the HINx and LINx pins of an SCM1240MF. Sanken recommends using the noise filter shown in figure 14. Note: R1 and R2 work as a voltage divider, resulting in voltage levels at the HINx or LINx pins that are lower than the VOH of the MCU. So, please take this into account. SCM1240MF-AN, Rev. 5 Ω kΩ R1＝33 to 100 Ω R2＝1 to 10 kΩ SCM1240M(F) Figure 14. A circuit example for minimizing noise over the HINx and LINx inputs SANKEN ELECTRIC CO., LTD. 9 Absolute Maximum Rating and Recommended Condition of Use Absolute Maximum Ratings, valid at TA = 25°C; data from SCM1246MF (30 A) type Characteristic Symbol Supply Voltage Supply Voltage (Surge) Remarks Rating Units VDC Between VBB and LS1, LS2, and LS3 450 V VDC(surge) Between VBB and LS1, LS2, and LS3 500 V IGBT Breakdown Voltage VCES VCC = 15 V, IC = 1 mA, VIN = 0 V 600 V Logic Supply Voltage VCC Between VCC and COM 20 V Boot-strap Voltage VBS Between VB and HS (U,V,W) 20 V Output Current, Continuous IO TCase = 25°C 30 Adc Output Current, Pulsed IOP Pulse Width ≤ 1 ms 45 A Input Voltage VIN –0.5 to 7 V ¯¯Ō ¯ Terminal Voltage F̄ VFO ¯¯Ō ¯ and COM Between F̄ 7 V –10 to 5 V 3.0 °C/W 4.0 °C/W –20 to 100 °C OCP Terminal Voltage Thermal Resistance, Junction-to-Case Case Operation Temperature VOCP Between OCP and COM R(j-c)Q 1 element operation (IGBT) R(j-c)F 1 element operation (FRD) TCOP Junction Temperature (IGBT) TJ 150 °C Storage Temperature Tstg –40 to 150 °C Isolation Voltage Viso 2000 Vrms Between exposed thermal pad and each pin; 1 minute, ac Recommended Operating Conditions at TA = 25°C; for SCM1246MF (30 A) type Characteristic Symbol Remarks Min. Typ. Max. Units Main Supply Voltage VDC Between VBB and LS – 300 400 V Logic Supply Voltage VCC Between VCC and COM 13.5 – 16.5 V VBS Logic Supply Voltage Minimum Input Pulse Width Between VB and HS 13.5 – 16.5 V tINmin(on) On pulse 0.5 – – μs tINmin(off) Off pulse 0.5 – – μs Dead Time tdead 1.0 – – μs FO Pull-up Resistor RFO 1 – 22 kΩ FO Pull-up Voltage VFO(PU) 3.0 – 5.5 V Bootstrap Capacitor CBOOT 10 – 220 μF 10 – – mΩ Shunt Resistor RS PWM Carrier Frequency fC – – 20 kHz Junction Temperature TJ – – 125 °C SCM1240MF-AN, Rev. 5 For IP ≤ 45 A SANKEN ELECTRIC CO., LTD. 10 Application Circuit The following diagram applies for a common current sensing shunt resistor for the three phases. VCC CP CBOOT (7) VB1 (8) HS1 (31) RB BootDi (6) ZD CP UV Detect VCC1 (5) HIN1 (3) LIN1 (4) COM1 (1) FO1 UV Detect Level Shift Input Logic CBOOT OCP1 (15) VB2 (16) HS2 Controller LIN2 (12) COM2 (9) FO2 UV Detect UV Detect Level Shift Input Logic STP CBOOT OCP2 (23) VB3 (24) HS3 INT (19) LIN3 COM3 (17) FO3 FRD (30) Thermal Protect LS2 RB UV Detect VCC3 (20) M V (25) (22) HIN3 (29) MIC2 BootDi (21) FRD Drive Circuit Drive Circuit O.C. Protect (10) LS1 RB VCC2 (11) (33) FRD Thermal Protect (28) (14) HIN2 (32) MIC１ BootDi (13) U Drive Circuit STP O.C. Protect (2) FRD Drive Circuit Input Logic VBB UV Detect Level Shift STP FRD Drive Circuit (26) W Drive Circuit CS VFO (18) RFO OCP3 O.C. Protect FRD (27) Thermal Protect LS3 MIC3 A/D RO CFO CO DRS RS COM SCM1240MF-AN, Rev. 5 SANKEN ELECTRIC CO., LTD. 11 Power Dissipation Calculation The following shows IGBT dissipation formulas for sine wave drive with three-phase modulation. Calculation of IGBT dissipation is separated into constant dissipation and switching dissipation. M is the Modulation Rate (0 to 1), Constant Dissipation, Pi: Fc is the Carrier Frequency in Hz, 1 P Vce(F ) Ic(F ) DT dF 2P 0 1 2 1 P 1 4 Ai M cos Q I 2 Vo M cos Q I 2 P 2 8 2 3P Pi Switching Dissipation, Psw: V 2 Psw Fc ( Eon( I ) Eoff ( I )) BB 300 P where: I is the motor current actual value in A, SCM1240MF-AN, Rev. 5 cosθ is the Motor Power Factor (0 to 1), Vce is Ai × I + VO , VBB is the DC link voltage, Eon (I) is the switching-on dissipation at a current I, and Eoff (I) is the switching-off dissipation at a current I. Regarding calculations for Ai, VO, Eon (I), and Eoff (I), please refer to the output characteristics data later in this document. Also, from the above dissipation, the IGBT die temperature, TJ, is calculated as: TJ = Rθ(j-c)Q × (Pi + PSW) +TC where Rθ(j-c)Q is the IGBT thermal resistance, TC is the IC case temperature, measured on the IC case surface. SANKEN ELECTRIC CO., LTD. 12 Characteristic Performance Data The following data is applicable to all of the SCM1240M series. Logic Supply Current (Off) versus Junction Temperature VCC = 15 V, 3 phases Logic Supply Current (Off) versus Logic Supply Voltage 3 phases I+% (mA) CC% =O #? 7 / #: Max. ͠ TJ = 125°C ͠ TJ = 25°C ͠ 6 5 6;2 Typ. / +0 Min. ICC (mA) +% % =O # ? 9 8 7 6 5 4 3 2 1 0 -25 4 3 2 1 0 0 25 50 75 100 125 150 12 13 14 6 L=͠? TJ (°C) Bootstrap Supply Current (Off) versus Junction Temperature VB = 15 V, HIN = Low, 1 phase 700 Typ. 6;2 300 Min. 200 IBOOT (μA) +DQQV =W# ? (μA) BOOT +IDQQV =W# ? / #: / +0 -25 Typ. 500 300 Min. / +0 100 0 50 75 6 L=͠? 25 100 125 0 -25 150 0 25 100 160 140 = 125°C 6TLJ͠ 200 100 IIN(L) (μA) ++0 * =W# ? 6 L͠ TJ = 25°C 6 L͠ 300 75 6 L=͠? 125 150 Input Current versus Junction Temperature VIN = High 600 500 400 50 TJ (°C) Bootstrap Supply Current (Off) versus Bootstrap Supply Voltage Typical, HIN = 5 Low, 1 phase I (μA) +$BOOT QQV=W#? 6;2 400 TJ (°C) 0 12 20 / #: 600 200 100 0 19 Max. 700 500 400 18 800 16 17 8 CC % % (V) =8 ? V Bootstrap Supply Current (On) versus Junction Temperature VB = 15 V, HIN = High, 1 phase Max. 600 15 / #: Max. 120 100 80 Typ. 6;2 / +0 60 40 Min. 20 0 13 14 SCM1240MF-AN, Rev. 5 15 16 17 8 $ =8 ? VB (V) 18 19 20 -25 0 SANKEN ELECTRIC CO., LTD. 25 50 75 6 L=͠? TJ (°C) 100 125 150 13 Characteristic Performance Data (continued) The following data is applicable to all of the SCM1240M series. Input Threshold Voltage (On) versus Junction Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 Max. Input Threshold Voltage (Off) versus Junction Temperature Typ. / #: VIL (V) 8 +.=8 ? VIH (V) 8 +* =8 ? Min. 6;2 / +0 -25 0 25 50 75 6 L=͠? TJ (°C) 100 125 150 / #: Min. 6;2 0 -25 / +0 0 25 50 75 6 L=͠? TJ (°C) 100 125 +0tpdOFF(H) A& '.# ;(ns) =WU? (ns) +0tpdON(H) A& '.# ; =WU? Typ. 6;2 / +0 0 SCM1240MF-AN, Rev. 5 25 50 75 6 L=͠? TJ (°C) 100 125 150 +0tpdOFF(L) A& '.# ;(ns) =WU? (ns) +0tpdON(L) A& '.# ; =WU? / #: 0 -25 25 50 75 6 L=͠? TJ (°C) 100 125 Max. 150 / #: Typ. 6;2 Min. / +0 200 150 100 50 0 25 400 350 Typ. 200 150 100 50 / +0 0 50 75 6 L=͠? TJ (°C) 100 125 150 IGBT Switch-Off Delay versus Junction Temperature LIN input Max. Min. / #: 6;2 300 250 0 -25 150 IGBT Switch-On Delay versus Junction Temperature LIN input 400 350 300 250 Typ. Min. 400 350 Max. 200 150 100 50 Max. IGBT Switch-Off Delay versus Junction Temperature HIN input IGBT Switch-On Delay versus Junction Temperature HIN input 400 350 300 250 3.0 2.5 2.0 1.5 1.0 0.5 0 -25 Max. / #: Typ. 300 250 Min. 200 150 6;2 / +0 100 50 0 -25 0 SANKEN ELECTRIC CO., LTD. 25 50 75 6 L=͠? TJ (°C) 100 125 150 14 Characteristic Performance Data (continued) The following data is applicable to all of the SCM1240M series. 80 70 60 50 40 30 20 10 Max. / #: Typ. 6;2 / +0 0 -25 0 25 50 75 6 L =͠? TJ (°C) 100 125 150 Gate Output Pulse Width versus Input Pulse Width Typical, TJ = 25°C, VCC = 15 V LIN pin Max. Typ. / #: 6;2 / +0 0 25 50 75 6 L =͠? TJ (°C) 100 125 150 Fault Output Voltage (Active) versus Junction Temperature VFO(PU) = 5 V; RFO = 10 kΩ VFO(active) (mV) ̖* UKFG ̖. UKFG 600 400 Low-side 200 High-side 0 12.4 12.2 12.0 11.8 11.6 11.4 11.2 11.0 10.8 10.6 -25 200 400 600 800 1000 1200 80 70 60 50 40 30 20 10 0 -25 Max. Typ. / #: Min. 0 25 50 75 100 6;2 / +0 125 150 6 L=͠? twIN (ns) TJ (°C) Undervoltage Lockout Release (High-side) versus Junction Temperature Undervoltage Lockout Enable (High-side) versus Junction Temperature / #: Max. 6;2 / +0 Typ. Min. 0 SCM1240MF-AN, Rev. 5 25 50 75 =͠? T6JL(°C) 100 125 150 (V)? V7UVHL 8 * .=8 0 VUVHH (V) 7 8 * * =8 ? 80 70 60 50 40 30 20 10 0 -25 90 800 twGATE (ns) Minimum IGBT Power-On Pulse Width (Low-Side) versus Junction Temperature HIN pin twON(L)(min) (ns) twON(H)(min) (ns) Minimum IGBT Power-On Pulse Width (High-Side) versus Junction Temperature 11.8 11.6 11.4 11.2 11.0 10.8 10.6 10.4 10.2 10.0 -25 0 SANKEN ELECTRIC CO., LTD. 25 50 Max. / #: Typ. 6;2 Min. / +0 75 =͠? T6JL(°C) 100 125 150 15 Characteristic Performance Data (continued) The following data is applicable to all of the SCM1240M series. 13.2 13.0 12.8 12.6 12.4 12.2 12.0 11.8 11.6 11.4 -25 Max. / #: Typ. 6;2 / +0 Min. 0 25 50 75 =͠? T6 L(°C) Undervoltage Lockout Enable (Low-side) versus Junction Temperature 100 125 V7UVLL (V)? 8 ..=8 (V) 7V8UVLH .* =8 ? Undervoltage Lockout Release (Low-side) versus Junction Temperature 150 12.4 12.2 12.0 11.8 11.6 11.4 11.2 11.0 10.8 -25 Max. / #: Max. 6;2 Typ. Min. 0 25 50 75 6 L=͠? TJ (°C) 100 / +0 125 0 1400 1200 1000 800 600 400 200 0 -25 150 25 3.0 6;2 Min. / +0 tBLANK (μs) $NCPMVKO G=WU? VTRIP (V)8 ? 8 64+ 2* =O 3.5 0.55 0.50 0.45 0.40 -25 / #: 50 75 6 L=͠? TJ (°C) 100 150 125 / #: 6;2 Max. Typ. / +0 Min. 0 25 50 75 6L=͠? TJ (°C) 100 125 150 Blanking Time versus Junction Temperature 0.60 Max. 6;2 Logic Supply UVLO Filter Delay (Low-side) versus Junction Temperature Temperature Monitor Threshold versus Junction Temperature Typ. Min. TdUV(VCC) (μs) 8 % % A7 8 . 1 A( +. 6 ' 4 =WU? TdUV(VB) (μs) 8 $A7 8 .1 A(+.6'4=WU? 1400 1200 1000 800 600 400 200 0 -25 / #: / +0 J Bootstrap Supply UVLO Filter Delay (High-side) versus Junction Temperature Typ. Max. Typ. Min. 2.5 2.0 1.5 / #: 6;2 / +0 1.0 0.5 0 25 50 75 100 125 150 0 -25 6 L=͠? 25 50 75 100 125 150 6 L=͠? TJ (°C) SCM1240MF-AN, Rev. 5 0 TJ (°C) SANKEN ELECTRIC CO., LTD. 16 Characteristic Performance Data (continued) The following data is applicable to all of the SCM1240M series. Overcurrent Protection Hold Time versus Junction Temperature Shoot-Through Protection Filter Delay versus Junction Temperature STP_FILTER (μs) tOCP (μs) / #: 6;2 / +0 6;2 / #: / +0 TJ (°C) tDVFO (μs) 8 HQ =8 ? TYP MIN Tj=25͠ MAX TYP MIN % H =W( ? 4 H =Mǡ? SCM1240MF-AN, Rev. 5 FO Pin Voltage Drop Delay versus Pulldown Capacitance Tj=25͠ MAX TJ (°C) FO Pin Saturation Voltage versus FO Pin Pullup Resistance SANKEN ELECTRIC CO., LTD. 17 Output Characteristic Performance Data The following data is applicable to the SCM1241M, 10 A devices. IGBT and FRD DC Characteristics Forward Voltage versus Forward Current VCE(sat) versus Supply Current VCC = 15 V Vf (V) VCE(sat) (V) ͠ ͠ 6 L͠ ͠ ͠ 6 L͠ If (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current VBB = 300 V,Vcc = 15 V, Inductive load, 25°C High-side Eon, Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 25°C 10 E (μJ) E (μJ) 10 1 (( 1 (( ICC (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon,Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 125°C 10 10 E (μJ) E (μJ) Low-side Eon, Eoff versus Supply Current VBB = 300 V,VCC = 15 V,Inductive load, 125°C 1 (( 1 (( ICC (A) SCM1240MF-AN, Rev. 5 ICC (A) SANKEN ELECTRIC CO., LTD. 18 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1243MF, 15 A device. IGBT and FRD DC Characteristics Forward Voltage versus Forward Current VCE(sat) versus Supply Current VCC = 15 V Vf (V) VCE(sat) (V) 6 L͠ ͠ ͠ 6 L͠ ͠ ͠ If (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current VBB = 300 V,Vcc = 15 V, Inductive load, 25°C 10 E (μJ) E (μJ) High-side Eon, Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 25°C 1 (( 1 (( 10 ICC (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon,Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 125°C Low-side Eon, Eoff versus Supply Current VBB = 300 V,VCC = 15 V,Inductive load, 125°C 1 (( E (μJ) E (μJ) 10 10 1 (( ICC (A) SCM1240MF-AN, Rev. 5 ICC (A) SANKEN ELECTRIC CO., LTD. 19 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1245MF, 20 A devices. IGBT and FRD DC Characteristics Forward Voltage versus Forward Current Vf (V) VCE(sat) (V) VCE(sat) versus Supply Current VCC = 15 V 6 L͠ ͠ ͠ ͠ 6 L͠ ͠ If (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current VBB = 300 V,Vcc = 15 V, Inductive load, 25°C 10 E (μJ) E (μJ) High-side Eon, Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 25°C 10 1 (( 1 (( ICC (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon,Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 125°C Low-side Eon, Eoff versus Supply Current VBB = 300 V,VCC = 15 V,Inductive load, 125°C 1 (( 1 (( 10 10 E (μJ) E (μJ) ICC (A) SCM1240MF-AN, Rev. 5 ICC (A) SANKEN ELECTRIC CO., LTD. 20 Output Characteristic Performance Data (Continued) The following data is applicable to the SCM1246MF, 30 A device. IGBT and FRD DC Characteristics Vf (V) VCE(sat) (V) Forward Voltage versus Forward Current VCE(sat) versus Supply Current VCC = 15 V ͠ ͠ 6 L͠ ͠ ͠ 6 L͠ If (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 25°C) Low-side Eon, Eoff versus Supply Current High-side Eon, Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 25°C VBB = 300 V,Vcc = 15 V, Inductive load, 25°C 10 E (μJ) E (μJ) 10 1 (( 1 (( ICC (A) ICC (A) Switching Power Loss (Half-Bridge Operation at TJ = 125°C) High-side Eon,Eoff versus Supply Current VBB = 300 V,VB = 15 V, Inductive load, 125°C Low-side Eon, Eoff versus Supply Current VBB = 300 V,VCC = 15 V,Inductive load, 125°C 10 E (μJ) E (μJ) 10 1 (( 1 (( ICC (A) SCM1240MF-AN, Rev. 5 ICC (A) SANKEN ELECTRIC CO., LTD. 21 • The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. • Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • In the case that you use our semiconductor devices or design your products by using our semiconductor devices, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor devices. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature (TJ) affects the reliability significantly. • When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. • Anti radioactive ray design is not considered for the products listed herein. • Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. • The contents in this document must not be transcribed or copied without Sanken’s written consent. SCM1240MF-AN, Rev. 5 SANKEN ELECTRIC CO., LTD. 22