High Voltage SLA6860M and SMA6860M Series Driver ICs for 3-Phase DC Motor Applications

Product Information
High Voltage SLA6820M and SMA6820MP Series
Driver ICs for 3-Phase DC Motor Applications
Introduction
The SLA6820M and SMA6820MP Series power packages
incorporate all of the necessary power control components
to configure the main circuit of an inverter power module
(IPM). These products are especially suitable for driving the
inverters of low-capacity motors, such as those used in 100
to 200 V fans for air conditioners.
Leadform 2452
(SMA)
Features and benefits include the following:
▪ Built-in pre-driver ICs and three bootstrap diodes as a
high-side drive power supply
▪ CMOS-compatible input (5 V)
▪ High-side gate driver using bootstrap circuit or floating
power supply
▪ One pin for 7.5 V regulator output
▪ Built-in protection circuit for controlling power supply
voltage drop (UVLO)
▪ Built-in overtemperature detection circuit (TD)
▪ Fault signal output during operation of protection circuit
▪ Output current up to 2.5 A continuous
▪ Small SIP (SLA and SMA, 24 pins)
Leadform 2451
(SMA)
Functional Description
The functional block diagram is shown in figure 2. High
voltage power and 15 VDC are input between VBB and
LS1/LS2, between VCC1 and COM1, and between VCC2
and COM2. The on/off signals of the power MOSFETs
are operated by six signals: HIN1, HIN2, HIN3, LIN1,
LIN2, and LIN3. These input signals are positive logic (the
MOSFET turns on at VxINx = high). The boot capacitors are
connected between VB1 and U, VB2 and V, and VB3 and
W1, as the high voltage power source.
Leadform 2171
(SLA)
Leadform 2175
(SLA)
Figure 1. SLA6820M and SMA6820MP Series packages are fully
molded SIPs, offering compact configurations both horizontal mount
(leadforms 2451 and 2175) and vertical mount (leadforms 2452 and
2171). The SLA packages feature an aluminum heatsink pad for
mounting external heatsinks.
Product Lineup
MOSFET
Rating
Input Voltage
(VAC)
Heatsink
Pad
SLA6826M
250 V / 2 A
120
Yes
SLA6827M
500 V / 1.5 A
230
Yes
SLA6828M
500 V / 2.5 A
230
Yes
SMA6821MP
250 V / 2 A
120
No
SMA6822MP
500 V / 1.5 A
230
No
SMA6823MP
500 V / 2.5 A
230
No
Type
SLASMA6820Mx-AN, Rev. 2
Contents
Introduction
Functional Description
Protection Functions
Application Circuit Recommendations
Electrical Characteristics Data
1
1
7
10
10
VB1
VB2
VB3
VD
VBB 1
VCC1
VBB 2
UVLO
HIN1
HIN2
HIN3
Input
Logic
UVLO
UVLO
UVLO
High-Side
Level Shift Driver
COM1
VCC 2
7.5V
Reg.
VREG
UVLO
Overtemperature
Detect
Input
Logic
Low-Side
Driver
LIN1
LIN2
LIN3
COM 2
U
V
W1
W2
LS2
LS1
FO
Heatsink Tab
(SLA only)
Figure 2. SLA6820M and SMA6820MP Series Functional Block Diagram. These
devices support high-side and low-side three-phase MOSFET output drivers.
Terminal List
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Tab
Name
VB1
VB2
VD
VB3
VCC1
COM1
HIN3
HIN2
HIN1
VBB1
VBB2
W1
V
W2
LS2
VREG
LS1
LIN3
LIN2
LIN1
COM2
FO
VCC2
U
–
Function
High-side bootstrap terminal (U phase)
High-side bootstrap terminal (V phase)
Bootstrap diodes anode terminal
High-side bootstrap terminal (W phase)
High-side logic supply voltage
High-side logic GND terminal
High-side input terminal (W phase)
High-side input terminal (V phase)
High-side input terminal (U phase)
Main supply voltage 1 (connect to VBB2 externally)
Main supply voltage 2 (connect to VBB1 externally)
Output of W phase (connect to W2 externally)
Output of V phase
Output of W phase (connect to W1 externally)
Low-side emitter terminal (connect to LS1 externally)
Internal regulator output terminal
Low-side emitter terminal (connect to LS2 externally)
Low-side input terminal (W phase)
Low-side input terminal (V phase)
Low-side input terminal (U phase)
Low-side GND terminal
Overtemperature and low-side UVLO fault-signal output
Low-side logic supply voltage
Output of U phase
(SLA only) Electrically isolated heatsink/external heatsink
mounting tab
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2
The protection functions, including overtemperature detection
(at abnormal ambient temperature, overload, and so forth), and
undervoltage of low control power supply voltage (at instantaneous fall, and so forth) are built-in and when any of these functions is operated, it can be monitored at the fault output terminal,
FO.
Structural Description
The external configurations of the device packages are shown in
figure 1. The device cases are molded epoxy resin. The surface of
each package has branding that includes the part number and lot
number.
As shown in figure 3, the backside of SLA6820M series provides
an aluminum heatsink tab. It is electrically isolated from the
leadframe. It can be attached to external heatsinks by means of
one or two M3 screws.
The devices each have 11 embedded die, including six power
MOSFETs, two pre-driver ICs, and three bootstrap diodes. These
die are mounted on a copper leadframe and connected with gold
wire between die and from die to leadframe (figure 3).
Terminal Descriptions
A summary description of the function of the various terminals is
given in the Terminal List table. Pin 1 for the package appears in
figure 5. This section provides detailed functional descriptions of
the individual pins.
U, V, W1, and W2 These are the output terminals that are connected to the motor. W1 and W2 must be tied together externally
on the printed circuit board (PCB) with a trace of minimum
length.
VD, VB1, VB2, and VB3 Power supply terminals for driving
the high-side MOSFETs.
As shown in figure 4, a bootstrap capacitor, CBOOTx, must be
connected between VB1 and U, VB2 and V, and VB3 and W. A
bootstrap capacitor circuit is required on each high-side bridge,
because they operate independently of each other.
The bootstrap capacitors, CBOOTx, must be charged at startup.
Before charging CBOOT, the corresponding low-side MOSFET
must be turned on. The IC has a built-in 22 Ω ±20% serial resistor and a bootstrap diode (600 V / 1 A). In applications in which
22 Ω is not sufficient, an external resistor can be added between
VCC and the VD pin.
The following factors should be considered when determining the
parameters of the bootstrap circuit. First, the optimal value for
the bootstrap capacitor, CBOOT, varies according to the driving
method (modulation method and output frequency), the switching
frequency (carrier frequency), the modulation ratio (duty cycle),
and the gate input capacity of the driving MOSFETs.
The following table provides an example for three-phase modulation with 90% duty cycle:
VBB
VD
Epoxy resin case
Gold wire
VBx
VBB
CBOOT
charge current
Die
Copper leadframe
High Side
Drive Circuit
Resin isolation layer
VCC
CBOOT
U,V,W
Aluminum heatsink
To Motor
Low Side
Drive Circuit
LS
Figure 3. SLA Package Cross-section View
Figure 4. Connection of Bootstrap Capacitor. There is a separate CBOOT
capacitor for each of the three phases.
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Gate protrusion
31.3 ±0.2
4 ±0.2
31 ±0.2
(A)
2X Gate protrusion
1.2 ±0.1
BSC
10.2 ±0.2
3 ±0.5
BSC
2X Exposed
tie bar
2.2 ±0.7
BSC
R1
REF
4.4
REF
1
+0.15
C 0.7
– 0.05
Gate protrusion
1.27 ±0.1 A
1.27 ±0.6 B
0.6 +0.15
– 0.05
2.2 ±0.7
BSC
0.55 +0.2
– 0.1
31.3 ±0.2
4 ±0.2
31 ±0.2
(B)
2X Gate protrusion
1.2 ±0.1
BSC
10.2 ±0.2
2X Exposed
tie bar
R1
REF
5 ±0.5
9.5 +0.7
– 0.5
0.5 +0.15
– 0.05
4.5
REF
1
1.27 ±0.5 A
4.5 ±0.5
0.6 +0.15
– 0.05
Figure 5. Package Outline Drawings. (A) LF2451, L-bend horizontal mount, (B) LF2452, vertical mount.
31.3 ±0.1
31 ±0.2
24.4 ±0.2
16.4 ±0.2
Gate protrusion
(A)
4.8 ±0.2
0.6
Exposed
heatsink pad
1.7 ±0.1
Ø3.2 ±0.15
Ø3.2 ±0.15
2X Gate protrusion
2.45 ±0.1
BSC
16 ±0.2 B
12.9 ±0.2
3 ±0.3
BSC
9.9 ±0.1
Branding Area
2X Exposed
tie bar
2.2 ±0.6
BSC
R1
REF
4.4
REF
0.6 +0.2
– 0.1
2.2 ±0.6
BSC
1.27 ±0.2 A
0.5 ±0.1
31.3 ±0.2
31 ±0.2
24.4 ±0.2
16.4 ±0.2
Gate protrusion
(B)
4.8 ±0.2
0.6
Exposed
heatsink pad
1.7 ±0.1
Ø3.2 ±0.15
Ø3.2 ±0.15
2X Gate protrusion
16 ±0.2 B
2.45 ±0.2
BSC
12.9 ±0.2
9.9 ±0.2
Branding Area
2X Exposed
tie bar
5 ±0.5
9.5 +0.7
– 0.5
0.6 +0.15
– 0.05
1.27 ±0.7 A
R1
REF
+0.15
0.5 – 0.05
4.5
REF
4.5 ±0.7
Figure 6. Package Outline Drawings. (A) LF2175, L-bend horizontal mount, (B) LF2171, vertical mount.
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SW Frequency
(kHz)
Recommended
Capacitor Value
(μF)
3
2.2
5
1
10
0.47
20
0.22
the built-in pre-driver IC. COM1 and COM2 must be connected
together externally on the application PCB. Varying electric
potential may become a cause of improper operation, so careful
attention is required to the design of connection points and minimizing the length of the PCB traces.
For two-phase modulation, or 120°C current-carrying topology,
several tens of times the values above would be required due to
the longer on-time.
Please select capacitors considering the conditions used. When
starting-up the IC, the low-side must be turned on first, and the
boot capacitor needs to be charged sufficiently. The adequacy of
the values shown above needs to be validated by testing in the
actual application. Because the VB1, VB2, and VB3 pins connect
to UVLO circuits, these terminal voltages must be set such that
the UVLO protection does not operate.
VCC1 and VCC2 These are the IC logic supply terminals for
the built-in pre-driver IC. VCC1 and VCC2 must be connected
together externally on the application PCB. To avoid improper
operation because of supply ripples or other factors, a ceramic
capacitor of approximately 0.1 μF must be installed near the pins.
Also, there is the possibility of permanent damage to the IC if a
voltage greater than 20 V is applied to the IC. To protect against
this, adding a Zener diode (VZ = 20 to 23 V) is recommended.
VCC1 and VCC2 have a built-in UVLO circuit, so these terminal
voltages need to be regulated within the rated range, so that the
UVLO protection does not operate.
COM1 and COM2 These are the logic ground terminals for
HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3 These are the input
terminals for controlling driver output to the motor. The IC uses a
5 V, CMOS Schmitt trigger circuit configuration. The input logic
is active high, and internal pull-down resistors are provided. The
value for the pull-down resistors is 100 kΩ on both the HIN side
and the LIN side, as shown in figure 7, but an additional input
filter (RC filter) or pull-down resistor should be considered in
case the application has excessive noise or the input voltage is
unstable.
VBB1 and VBB2 These are the main power supply terminals. The VBB1 and VBB2 terminals are connected internally,
but it is recommended to also tie them together externally by a
short-circuit connection on the PCB, in order to decrease wiring
impedance. A snubber capacitor (0.01 μF) should be placed near
each of VBB1 and VBB2, connecting to the corresponding COM
terminal, for suppressing surge voltages.
LS1 and LS2 These are source terminals for the low-side
MOSFETs. LS1 and LS2 must be connected together externally
on the PCB. When connecting a shunt resistor to these terminals,
such as for overcurrent sensing, the length of the trace between
the IC terminals and the shunt resistor must be as short as practicable. Greater length increase the susceptibility to improper
operation due to noise.
VREG This is the terminal for the 7.5 V / 35 mA output to an
external current regulator. Using an external regulation function
is an important consideration for stabilizing the supply voltage.
5V
HIN
2 kΩ
2 kΩ
LIN
COM
100 kΩ
Figure 7. HINx and LINx Terminals Internal Equivalent Circuit
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This could include placing an electrolytic capacitor between
VREG and COM for avoiding supply ripple, and placing a
ceramic capacitor for noise protection. If an external regulator is
not required, VREG can be left open.
FO This is the fault signal output terminal used to indicate abnormal operation. Its internal circuit is shown in figure 8. The output
logic is shown in the following table
Overtemperature
Detection (TD)
Logic Supply
Undervoltage
Detection (UVLO
VCC2 to COM2)
FO Output
Yes
Yes
IC Shutdown
No
Yes
It outputs a 5 V signal at overtemperature detection (TD) or a
UVLO condition between VCC2 and COM2. When a UVLO
condition is in effect, the IC shuts down output on the low side,
at the same time FO output occurs. When a TD condition occurs,
the FO output occurs, but there is no shutdown of the low-side
output. The response to a TD condition must be handled by the
application system logic. For example, the FO signal could be
input into the application microprocessor, which could then turn
off the gate control inputs to the IC.
5V
100 Ω
200 kΩ
FO
COM
Figure 8. FO Terminal Internal Equivalent Circuit
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Undervoltage Lockout (UVLO) of Control Power Supply
When the gate-driving voltages on the output MOSFETs become
too low, the losses of the power MOSFETs increase, and in the
worst case the circuits may be damaged. In order to prevent this,
undervoltage protection circuits are built into the control power
supply.
The high-side driver IC monitors the voltage between VCC1 and
COM1, the voltage between VB1 and U, VB2 and V, and VB3
and W. The low-side driver IC monitors the voltage between
VCC2 and COM2.
As shown in the timing charts (figure 10), the UVLO functions
monitor VB voltage, and if it falls below theVUVHL voltage level,
the high-side MOSFETs will be shut down. Similarly, if the
VCC1 to COM1 voltage falls below the VUVHL voltage level, the
high-side MOSFETs will be shut down. Subsequently, when the
supply voltage rises and exceeds VUVHH, the IC resets automatically and resumes outputs according to the input command signal
(HIN).
On the low side, if the VCC2 to COM2 voltage falls below the
VUVLL voltage, the low-side MOSFETs will be shut down and the
FO output goes high. When the supply voltage rises and exceeds
the VUVLH voltage level, the low-side MOSFETs will be released
from shut down, and the FO output goes low. Subsequently, the
low side operates according to the input command signal (LIN).
Overtemperature Detect Function The devices have a builtin overheating detection (TD) circuit. If the device overheats
abnormally (exceeds TDH), it outputs 5 V to the FO terminal. The
IC does not, however, shut down the output MOSFETs automatically. Instead, the application system logic should respond to
the FO output and transmit shutdown commands on the control
signals (HIN1, HIN2, and HIN3 and LIN1, LIN2, and LIN3).
When the device temperature falls below the TDL level, the TD
shutdown is released. The TD function parameters are as follows:
Min (°C)
Typ (°C)
Max (°C)
TDH
135
150
185
TDL
105
120
135
TDhys
25
30
35
This TD function is not intended to completely protect the internal MOSFETs or driver logic ICs. The application logic should
monitor temperature conditions, and be designed to minimize
the delay to response, particularly in the case of a rapid current
increase.
External Regulator Function The devices have a built-in
external regulator (7.5 V / 35 mA) output. The fundamental characteristics of the regulator are shown in figure 9.
8
6
25°C
VREG (V)
This section describes in detail the various device protection
features provided in these devices.
TDhys (Overtemperature Detect Hysteresis) is the difference
between TDH and TDL .
125°C
4
IO = 35 mA
25°C ≤ TJ ≤ 125°C
2
0
0
5
10
15
20
VCC (V)
(A)
10
8
VREG (V)
Protection Functions
6
4
VCC = 15 V
25°C ≤ TJ ≤ 125°C
2
0
0
10
20
IO (mA)
30
40
(B)
Figure 9. External Regulator Characteristics: (A) line regulation, and
(B) load regulation
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HIN
VUVHH
VUVHL
VB - HS
UVLO Release (High-Side)
HO
(A)
LIN
VUVLH
VCC
VUVLL
UVLO Release (Low-Side)
LO
FO
TDH
TJ
TDL
(B)
Figure 10. UVLO Protection Circuit Timing (A) high-side, (B) low-side
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1
2
4
11
10
3
5
VB1 VB2VB3
VCC1
HO1
HS1
24
High-side
Logic Circuit
ZD
HO2
9
8
7
6
HS2
HIN 1
HIN 2
HIN 3
HO3
COM1
HS3
13
M
12
14
23
VCC 2
ZD
LO 1
System
Logic
Low-side
Logic Circuit
20
19
18
16
22
21
LIN 1
LO 2
17
LIN 2
LIN 3
LO 3
VREG
15
FO
COM2
15V
Figure 11. Typical Application
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Application Circuit Recommendations
When designing application circuits using these devices, the following should be taken into consideration:
Supply Sequence The load power supply does not have to be
provided in any particular sequence. However, commands should
not be transmitted on the sequencing signal input terminals, HIN
and LIN, until after the logic control power supply, VCC, has
reached steady state.
Short Circuit Protection There is no built-in protection circuit
against short circuits through the outputs to ground. The application circuit logic should be designed to monitor outputs to detect
a short circuit condition.
Pin to Pin Distance The device packages have 24 pins, and
a 1.27 mm pin pitch. At operating voltage levels, there may be
insufficient creepage and clearance distance, and conformal coating or encapsulation of the application printed board assembly is
recommended.
Surge Protection Each terminal should be protected against
power surges by isolation using an external component such as a
ceramic capacitor or Zener diode. Power surges that impinge on
the device may cause critical damage to the IC as well as faulty
operation.
Input Blanking Time In order to avoid a high-side to low-side
short-circuit, the HIN and LIN signals must never be in phase.
The blanking time, tBLANK, or dead-time, is the delay between
rising edges on the HIN and LIN signals. It must be controlled
externally by the application system logic, as it is not set internally. A tBLANK of more than 1.5 μs is recommended.
Electrical Characteristics Data
The following pages contain characteristic performance data.
The information shown applies to all models of the SLA6820M/
SMA6820MP series, unless otherwise specified.
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All SLA6820M and SMA6820MP Series Devices
Bootstrap Current versus Bootstrap Voltage
Supply Current versus Supply Voltage
400
6
125°C
4
IBOOT (μA)
ICC (mA)
5
25°C
3
2
300
125°C
200
100
25°C
1
0
0
12
13
14
15
16
VCC (V)
17
18
19
20
10
14
16
VBOOT (V)
18
20
UVLO Voltage versus Case Temperature
IIN Current versus Case Temperature
100
15
VCC = 15 V
VCC = 15 V
VIN = 5 V
VUVLO (V)
80
IIN (μA)
12
60
40
UVHH
10
UVHL
5
20
0
-25
0
25
50
TC (°C)
75
100
0
-25
125
25
50
TC (°C)
75
100
125
Boot Diode Forward Current versus Forward Voltage
FO Voltage versus Case Temperature
Includes series resistance
200
6
5
TC = 25°C
150
4
IF (mA)
VFO (V)
0
3
2
100
TC = 125°C
50
1
0
0
-25
0
25
50
TC (°C)
75
100
125
0
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1
2
VF (V)
3
4
5
11
SLA6826M/SMA6821MP MOSFET Characteristics
RDS(on) versus ID
4
VSD = 15 V
3
1.5
ISD (A)
125°C
75°C
2
25°C
1
TC = 125°C
1
TC = 75°C
0.5
TC = 25°C
0
0
0.5
1
ID (A)
1.5
0
0.0
2
0.2
0.4
0.6
0.8
1.0
VSD (V)
Typical Switching Loss versus Drain Current
50
Switching Loss (μJ)
RDS (on) (Ω)
SD Voltage versus SD Current
2
VGS = 15 V
TJ = 125°C
VCC = 15 V
VBB = 120 V
Inductive load
40
30
Eon
20
Eoff
10
0
0.0
0.5
1.0
ID (A)
1.5
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2.0
12
SLA6827M/SMA6822MP MOSFET Characteristics
RDS(on) versus ID
8
VGS = 15 V
7
VSD = 0 V
6
5
ISD (A)
125°C
75°C
4
25°C
3
TC = 125°C
1
TC = 75°C
0.5
2
TC = 25°C
1
0
0.0
0
0.0
0.5
ID (A)
1.0
1.5
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
Typical Switching Loss versus Drain Current
100
Switching Loss (μJ)
RDS (on) (Ω)
SD Voltage versus SD Current
1.5
80
TJ = 125°C
VCC = 15 V
VBB = 280 V
Inductive load
Eon
60
40
Eoff
20
0
0.0
0.5
ID (A)
1.0
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1.5
13
SLA6828M/SMA6823MP MOSFET Characteristics
RDS(on) versus ID
5
VGS = 15 V
VSD = 0 V
125°C
4
2
75°C
25°C
2
TC = 125°C
1.5
ISD (A)
3
TC = 75°C
1
0.5
1
0
0.5
1
ID (A)
1.5
2
TC = 25°C
0
0.0
0
2.5
0.5
VSD (V)
1.0
1.5
Typical Switching Loss versus Drain Current
160
Switching Loss (μJ)
RDS (on) (Ω)
SD Voltage versus SD Current
2.5
140
120
100
TJ = 125°C
VCC = 15 V
VBB = 280 V
Inductive load
Eon
80
Eoff
60
40
20
0
0.0
0.5
1.0
ID (A)
1.5
2.0
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2.5
14
All performance characteristics given are typical values for
circuit or system baseline design only and are at the nominal
operating voltage and an ambient temperature of 25°C,
unless otherwise stated.
The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this
publication is current before placing any order.
When using the products described herein, the applicability and suitability of such products for the intended purpose should be reviewed at the
users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products
at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus
(home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aerospace equipment) is not supported.
When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems
or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written
confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are
given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property
rights, or any other rights of Sanken or Allegro or any third party that may result from its use.
Anti radioactive ray design is not considered for the products listed herein.
Copyright © 2008 Allegro MicroSystems, Inc.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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