Application Information SX68000MH Series High Voltage 3-Phase Motor Driver ICs Introduction The SX68000MH series is an inverter power module which includes power MOSFETs, pre-driver IC, and bootstrap diodes with limit resistors in a single package. The device provides an ideal solution especially for small size inverter motors such as fans and pumps. These ICs take 230 VAC input voltage, and up to 2.5 A (continuous) output current. Figure 1 shows the functional block diagram of the device. High voltage power supply is applied between VBB1 and VBB2 and LS. 15 V is applied between VCC1 and COM1, and VCC2 and COM2. Six signals, HIN1 through HIN3 and LIN1 through LIN3, control the on-off switching of the six internal power MOSFETs. These input signals are active high (xIN = High → MOSFET on). Boot capacitors should be connected between VB1 and U, VB2 and V, and VB31 and W1, for high-side power supply. The device includes: OCP (overcurrent protection, activated for example at a short on the inverter bridge), TSD (thermal shutdown, activated for example at abnormal temperatures, or overloads), and UVLO (protection circuit for sudden drops of the controlling power supply voltage). Operation of these protection features can be monitored on the fault signal output terminal, F̄¯¯Ō¯. There is a current limiter function for the MOSFET control signal. When the current through a shunt resistor exceeds the threshold, the OCL terminal goes high (active high). By connecting this signal to the SD terminal, current limiter operation (high-side of MOSFETs turned off for 1 carrier PWM cycle) can be performed. Table 1. SX68000MH Series Lineup MOSFET Rating (Ω Typ) (Ω Max) Boot Resistance (Ω) SX68001MH 250 2 1.25 1.5 60 SX68002MH 500 1.5 3.2 4 60 SX68003MH 500 2.5 2 2.4 60 Part Number Breakdown (V) Output (A) RDS(on) Contents Introduction Features Terminal Functions Protection Functions Application Information Cautions and Warnings Performance Characteristics Worldwide Contacts SX68000MH-AN January 28, 2013 SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/ 1 2 4 7 12 14 15 25 • OCP (Overcurrent Protection) Features OCP is a function that shuts down the MOSFET gate signal at overcurrent conditions, such as output short-circuit and inverter bridge short-circuit, and to output an alarm signal. The output time of the alarm signal is set by an external resistor and capacitor. • Package: 27-pin SOP The SX68000MH series is packaged in an SOP package with 27 pins, which enables down-sizing and simple PCB layout. Pin pitch is 1.2 mm, with a 2.4 mm pitch separating adjacent high and low voltage pins. Pin width is 0.4 mm. Body thickness is 2.1 mm. This package size is suitable to be embedded in a motor. • Gate shutdown function on both high- and low-side at abnormal operation • Integrated boot diode (600 V, 0.5 A) with a current limit resistor for each of the high-side gate drivers Externally connecting the SD terminal and the inverted F̄¯¯Ō¯ terminal signal enables the device to shut down all high-side and low-side MOSFETs at abnormal conditions (when the F̄¯¯Ō¯ signal goes low), such as overheating, overcurrent, or controlling power supply voltage drop. • OCL (Overcurrent Limiter) function (with signal output and shut-down terminal) • Built-in TSD (thermal shutdown) function, embodied in the low-side driver IC (MIC) When the current exceeds the setting value, to limit the current the MOSFET is switched off for one PWM cycle at the carrier frequency. When the MIC chip temperature exceeds the set value, the gate input is shut down, and the device outputs an alarm signal. Temperature is monitored by the low-side MIC. • Three built-in high voltage bootstrap diodes, each with current limiting resistor VB1 VB2 VB31 VB32 VCC1 VBB1 VBB2 UVLO HIN1 HIN2 HIN3 UVLO Input Logic UVLO UVLO High Side Level Shift Driver W1 W2 V V1 V2 U COM1 SD VCC2 REG LIN 1 LIN 2 LIN 3 COM2 REG UVLO Input Logic (OCP Reset) Thermal Shutdown Low Side Driver OCP OCP and OCL FO LS OCL Figure 1. Functional Block Diagram SX68000MH-AN SANKEN ELECTRIC CO., LTD. 2 • Built-in protection circuit for controlling power supply voltage drop (UVLO) The device monitors each controlling supply voltage: VCC1, VCC2, VB1, VB2, and VB31. If any of these voltages falls below the undervoltage threshold, the gate is shut down. If the VCC2 voltage falls below the undervoltage threshold, the F̄¯¯Ō¯ signal is asserted. • Alarm signal output (indicating shut down) while protection circuit is in operation Operates on the low, through the F̄¯¯Ō¯ terminal, an open collector output. When TSD, OCP, or UVLO protection for controlling power supply voltage VCC2 drop are activated, the internal tran- sistor turns on and drives the F̄¯¯Ō¯ terminal low. • RoHS compliance RoHS compliant (Pb free) for terminal solder and internal solder. • Structure The SX68000MH series has a total of 11 chips: six MOSFETs, two drive ICs, and three bootstrap diodes mounted on a copper leadframe. Gold wires connect from chip to chip, and from chip to leadframe. The case is molded epoxy resin. Part number and lot number are printed on the surface of the case. Figure 2 shows the package exterior and the internal construction. Cu leadframe Au wire Chip Figure 2. SX68000MH Package Structure; external view (left), and cross section view (right) 22 ±0.2 (Including mold flash) +0.15 0.25 –0.05 18 27 14.1 ±0.3 1 +0.15 0.4 –0.05 1.2 ±0.2 17 11.4 ±0.2 (Not including mold flash) 1.05 ±0.2 2.1 ±0.2 Figure 3. SX68000MH Package Outline Drawing SX68000MH-AN 0.2 0 SANKEN ELECTRIC CO., LTD. 3 Terminal Functions Pin-out Diagram V2 W2 LS LIN2 LIN3 OCL V1 VB32 18 FO 8 VCC2 7 U 6 19 COM2 5 VB1 SD 4 REG HIN1 3 LIN1 W1 HIN2 2 21 20 VBB1 VB31 1 VBB2 HIN3 22 COM1 23 VCC1 25 24 V 26 VB2 27 9 10 11 12 13 14 15 16 17 To keep sufficient distance between high and low voltage terminals, or between high-voltage terminals with different electric potentials, one pin each is removed between: pin 2 (V) and pin 3 (VCC1), pin 18 (W2) and pin 19 (V2), pin 19 (V2) and pin 20 (U), pin 21 (VB1) and pin 22 (VBB1), pin 22 (VBB1) and pin 23 (V1), pin 23 (V1) and pin 24 (W1), pin 25 (VB31) and pin 26 (VBB2), and pin 26 (VBB2) and pin 27 (VB32). Table 2. Terminal List Table Number Name Function Number Name Function 1 VB2 2 V High-side bootstrap terminal (V phase) 14 COM2 Low-side GND terminal Output of V-phase 15 VCC2 3 VCC1 Low-side logic supply voltage High-side logic supply voltage 16 ¯¯Ō ¯ F̄ Fault signal output; active low 4 COM1 High-side logic GND terminal 17 LS Low-side MOSFET source terminal 5 HIN3 High-side input terminal (W-phase) 18 W2 Output of W phase (connect to W1) 6 HIN2 High-side input terminal (V-phase) 19 V2 Output of V phase (connect to V1) 7 HIN1 High-side input terminal (U-phase) 20 U Output of U phase 8 SD High-side shut down input 21 VB1 9 OCL Current limiter signal output (CMOS output) 22 VBB1 10 LIN3 Low-side input terminal (W phase) 23 V1 Output of V phase (connect to V2) 11 LIN2 Low-side input terminal (V phase) 24 W1 Output of W phase (connect to W2) 12 LIN1 Low-side input terminal (U phase) 25 VB31 26 VBB2 Main supply voltage 2 (connect VBB1 externally) 27 VB32 High side bootstrap terminal (W phase) 13 SX68000MH-AN REG 7.5 V regulator output SANKEN ELECTRIC CO., LTD. High-side bootstrap terminal (U phase) Main supply voltage 1 (connect VBB2 externally) High side bootstrap terminal (W phase) 4 Table 3. Equivalent Circuits for Input and Output Terminals Pin Number Terminals Input or Output 1, 21, 25 (27) VB2, VB1, VB31 (VB32) Input VCC1 Input Equivalent Circuit VBx (High side) U, V, W High-side drive circuit VCC1 3 REG UVLO COM1 5, 6, 7, 10,11,12 HIN3, HIN2, HIN1, LIN3, LIN2, LIN1 2 kΩ Input HINx, LINx 2 kΩ SD Input 5V 2 kΩ 20 kΩ COMx 8 Boot Diode, VBx SD 5V 2 kΩ Filter 3.3 µs To Shutdown 1 MΩ COM1 5V 100 Ω 9 OCL Output 200 kΩ OCL COM2 VCC2 13 REG REG Output 100 kΩ COM2 VCC2 15 VCC2 Input REG UVLO Low-side drive circuit COM2 5V Shut down 16 ¯¯Ō ¯ F̄ Input, Output 1 MΩ 50 Ω FO COM2 5V 2 kΩ 17 LS Input LS OCL OCP 200 kΩ COM2 SX68000MH-AN SANKEN ELECTRIC CO., LTD. 5 Descriptions of input and output terminals The following are explanations for the input and output terminals (please refer to figure 18): or damage by power supply ripple or external surges, please put ceramic capacitors, CBYP , of 0.01 to 0.1 μF near the terminals. In addition, if surge voltage could exceed 20 V, it is recommended to use a Zener diode, DZ (VZ = 18 to 20 V) . • VBB1, VBB2 terminals • REG terminal These are the main supply voltage terminals, and they are internally connected to each other. For thermal considerations, it is recommended to connect both VBB1 and VBB2 externally. This is the terminal for the regulated 7.5 V output. The maximum load current is 35 mA. If the regulator output is used in the application, please consider stabilizing the output voltage by using an electrolytic capacitor between REG and COM. Note: In order to reduce surge voltages, it is recommended to use a snubber capacitor, CS in figure 18, of 0.01 to 0.1 μF between VBB and COM. In order to achieve better effectiveness of the snubber capacitor, please make the capacitor PCB trace as short as practicable, and place it between the IC and an additional electrolytic capacitor. VBB1 and VBB2 are high voltage terminals. Please provide sufficient separation from other traces or consider using overcoating material. In addition, the main current flows through VBB1 and VBB2. Please make these traces as wide as possible. • U, V1, V2, W1, W2 terminals These terminals are connected to the motor. Because V1 and V2, and W1 and W2, are not connected to each other internally in the IC, please connect those terminals on the PCB. Because these output terminals have high voltage, please provide sufficient separation from other lines or consider using overcoating material. Note: Because the V terminal is internally connected the V1 terminal, there is no requirement to connect these two terminals to each other externally. The V terminal is used to connect the bootstrap capacitor. Please do not connect this terminal to the motor. Because the main current flows through the U, V1, V2, W1, and W2 terminals, please make the traces wide for these terminals. • VB1, VB2, VB31(VB32) terminals If the regulator output is unused, please leave the terminal open. • HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3 terminals These are the input terminals for MOSFET control. Threshold voltage is set for the use of both 3.3 V and 5 V inputs. Input logic is active high and a pull-down resistor of 22 kΩ (typ) is built-in. In case external noise becomes significant or wire connections are long, please consider using an RC filter, as shown in figure 4 (RA = 50 to 300 Ω , C = 100 to 1,000 pF), or a pull-down resistor (RPD ≈ 4.7 to 10 kΩ). • SD terminal This input terminal is used to shut down the high-side output MOSFETs. The terminal is active high, and when a high signal (3.3 or 5 V) is applied, those MOSFET gates are shut down. By connecting OCL to the SD terminal externally, current limiter operation is enabled (figure 6 shows the timing diagram for the current limiter function). There is an internal filter of 3.3 μs (typ) on the SD terminal. Pulses input from the OCL terminal that are narrower than that are considered noise, and the gates are not shut down. If a pulse is wider than 3.3 μs, the gates are shut down. When the gates are shut down, the current flowing through the shunt resistor becomes 0 A, and the OCL signal goes low (0 V), However, each high-side MOSFET remains off until the corresponding HIN signal transitions from low to high, until a positive (rising) signal edge comes (referred to as edge operation). These are terminals to connect the bootstrap capacitors for smoothing the high-side controlling supply voltage. Please connect individual capacitors, CB , between VB1 and U, VB2 and V, and VB31 and W1. VB31 is internally connected to VB32. Please leave VB32 unconnected. By connecting the SD terminal and the inverted F̄¯¯Ō¯ terminal signal, all high-side and low-side MOSFETs can be shut down when an abnormal circumstance occurs, such as overheating, overcurrent, or undervoltage on the control supply voltage. In order to avoid effects of external noise, please place these capacitors very near to the IC. In addition, please use ceramic capacitors which have good high frequency response. As shown in figure 5, the LS terminal can be used to control the OCL terminal. If the voltage at the LS terminal is kept higher The bootstrap capacitors are charged from the VB terminals, which are supplied through the VCC1 terminal, the bootstrap diodes, DB , inside the IC, and the in-rush current limiter boot resistors, RB . The time constant for charging is RB × CB . • OCL, LS terminals System Control IC （MCU） SX68000MH RPD • VCC1, VCC2 terminals These are the control power supply voltage terminals. Please connect both VCC1 and VCC2 to 15 V. To avoid malfunction SX68000MH-AN RA Figure 4. External Noise Reduction Circuit; for HIN and LIN input terminals SANKEN ELECTRIC CO., LTD. 6 than 0.65 V (typ) for 2 μs (typ), the output voltage at the OCL terminal goes high (5 V). When OCL is connected to the SD terminal, it operates as a current limiter (see figure 6 for current limiter timing; F̄¯¯Ō¯ is the fault flag signal output). • F̄¯¯Ō¯ terminal An internal transistor on the F̄¯¯Ō¯ output terminal is turned on by the protection circuits due to overcurrent, overtemperature, or for undervoltage on the control supply voltage, VCC2 . At the same time, the low-side MOSFETs are shut down. After the fault condition is released, the F̄¯¯Ō¯ transistor operates according to LIN (logic level operation). Please connect a pull-up resistor, RFO = 3.3 to 10 kΩ, and a capacitor for noise malfunction prevention, CFO = 0.001 to 0.01 μF, to the F̄¯¯Ō¯ terminal. 0.65 V LS 2 kΩ COM2 – + 200 kΩ OCL Filter 2 μs (typ) Figure 5. Equivalent Circuit from LS to OCL Protection Functions The following are descriptions and timing charts of the operation of protection functions for the SX68000MH series. Protection circuit for controlling power supply voltage drop (undervoltage lockout, UVLO) If gate drive voltage of the output MOSFETs becomes insufficient, there is greater MOSFET power dissipation, and in the worst case, the IC may be damaged. In order to avoid this, a protection circuit for controlling power supply voltage drop is incorporated. The control IC (MIC) monitors the high-side voltage: between VCC1 and COM1, VB1 and U, VB2 and V1, and VB3 and W1 (the MIC also monitors the low-side voltage, between VCC2 and COM2). As shown in figure 7, after VB exceeds the VUVHH rated value, 10.5 V (typ), at the next positive (rising) edge on HIN (edge operation), an output-on pulse appears at HO (the gates of the high-side output MOSFETs). When VB goes below the VUVHL rated value, 10 V (typ), the high-side MOSFETs are shut down. When the voltage between VCC1 and COM1 goes below VUVLL , 11 V (typ), which applies on both of VCC1 and VCC2 UVLO conditions, the high-side MOSFETs are shut down. After a shutdown, when the power supply voltage rises and exceeds VUVLH , HIN LIN High-side gate shut down HO (high-side MOSFET gate) 3.3 μs 3.3 μs Low-side gate shut down LO (low-side MOSFET gate) VTRIP (1V) LS VLIM 2 μs 2 μs 2 μs OCL and SD 20 μs(min) FO Figure 6. Timing Chart of Current Limiter Operation SX68000MH-AN SANKEN ELECTRIC CO., LTD. 7 collector internal transistor on the F̄¯¯Ō¯ terminal turns on. When VCC2 rises and exceeds VUVLH , 11.5V(typ), the shut down of the low-side MOSFETs is released and internal transistor on the F̄¯¯Ō¯ terminal turns off. After the fault condition is released, the F̄¯¯Ō¯ transistor operates according to LIN (logic level operation), see figure 10. 11.5 V (typ), at the next positive (rising) edge (edge operation), an output-on pulse appears at HO. Note: When power MOSFET output is shut down according to UVLO operation due to a voltage drop on the high side, the fault is not reflected at the F̄¯¯ Ō¯ output. Figures 8 and 9 show the internal equivalent circuit of the UVLO detection features on the high-side control power supply, on the VB and VCC1 terminals. As shown in the figures, internal filters are provided to eliminate line noise. The low-side UVLO circuit has an internal filter to eliminate line noise, similar to the high-side UVLO circuit. As mentioned above, this IC contains filters against steep drops in the control voltages: VB, VCC1, and VCC2. However, there are possibilities of malfunction due to line noise or IC damage When the voltage between VCC2 and COM2 goes below VUVLL , 11 V (typ), the low-side MOSFETs are shut down and the open HIN VCC1 VUVLH VUVLL VB to VUVHH High Side (U,V,W) VUVHH VUVHL HO Figure 7. Timing Chart of High-Side UVLO Operation SET pulse FF S Q RESET pulse MOSFET gate to Drive circuit HIN SET pulse Pulse Generator RESET pulse R VREF VB VREF VCC1 Filter MOSFET gate to Drive circuit R Comparator + – FF S Q Comparator + – Filter U,V,W Figure 8. High-Side UVLO Internal Equivalent Circuit at VB SX68000MH-AN Figure 9. High-Side UVLO Internal Equivalent Circuit at VCC1 SANKEN ELECTRIC CO., LTD. 8 in the event excessive voltage is applied, a filter time-constant is exceeded, or only VCC1 drops but VB is retained, and so forth. Therefore, please place an external ceramic capacitor, CBYP , of 0.01 to 0.1 μF and a Zener diode, DZ (VZ = 18 to 20 V) near the power supply terminals. Note: Because the die temperature of the power MOSFETs is NOT directly monitored, damage to the IC by overheating cannot be fully prevented. Please note that there may be some delay in temperature detection, such as in cases when the MOSFET temperature is increased abruptly, until the heat reaches the monitors. Thermal Shutdown (TSD) Over Current Protection (OCP) The SX68000MH series contains a Thermal Shutdown circuit. In the event the IC is overheated by an increase of power consumption due to overload or an increase of ambient temperature, the low-side power MOSFETs are shut down, and the internal open collector transistor on the F̄¯¯Ō¯ terminal is turned on. The SX68000MH series contains an Overcurrent Protection function. Figure 12 shows the internal equivalent circuit structure for OCP. If the voltage between LS and COM is exceeds VTRIP , Table 4 provides the TSD temperature parameters. Detection is done by the low-side MIC. When the temperature exceeds 150°C (typ), the low-side MOSFETs are shut down, and when the temperature goes below 120°C (typ), the shutdown is released and the IC operates according to the LIN signals. Table 4. Thermal Protection (TSD) Levels Low-Side MIC Temperature (°C) Symbol Min. Typ. Max. TSD Enable TDH 135 150 165 TSD Release TDL 105 120 135 TDHYS – 30 – TSD Hysteresis LIN VCC2 VUVLH VUVLL VUVLH LO FO Open collector transistor turns on at low Figure 10. Timing chart of low-side UVLO operation LIN TMIC TDH TDL LO FO Open collector transistor turns on at low Figure 11. Timing Chart of Thermal Protection (TSD) Operation (TMIC is the temperature monitored at the low-side MIC) SX68000MH-AN SANKEN ELECTRIC CO., LTD. 9 1.0 V (typ), for the blanking time, tBK , 2 μs (typ), OCP operation is started. At the start of OCP operation, at the same time as an internal transistor on the F̄¯¯Ō¯ terminal (connected to F̄¯¯Ō¯ through a 50 Ω resistor) turns on, the gates of the low-side output MOSFETs are shut down. OCP operation is continued for a period of 25 μs (typ) after the LS terminal voltage becomes less than 1 V. After the 25 μs period has passed, the gate shutdown is released, and the transistor of the F̄¯¯Ō¯ terminal turns off. After that, the IC oper- ates according to the LIN signals. There is an internal circuit that shuts down the MOSFET gates when the F̄¯¯Ō¯ terminal is low. The F̄¯¯Ō¯ Recovery time, the delay in return from OCP mode to normal operation, is adjustable by an external pull-up resistor, RFO , on the F̄¯¯Ō¯ terminal. If it is required to extend the MOSFET shutdown period beyond the 25 μs (typ) of OCP, it can be extended by increasing the value of RFO or not inserting RFO. For more information, please refer to the Implementing Adjustable F̄¯¯Ō¯ Recovery Time section. 1 MΩ MOSFET Shut down 2 kΩ VREF (1 V) ー LS OCP ＋ Filt er 2 μs FF S Q Timer 25 μs FO 50 Ω R Figure 12. OCP Internal Equivalent Circuit LIN LO LS VTRIP (1V) ＜2 μs 2μs 20 μs (min) FO Figure 13. Timing Chart of Overcurrent Protection (OCP) Operation SX68000MH-AN SANKEN ELECTRIC CO., LTD. 10 ¯¯Ō ¯ Recovery Time Implementing Adjustable F̄ This IPM has a function to adjust F̄¯¯Ō¯ recovery time using an external pull-up resistor and a capacitor added at the F̄¯¯ Ō¯ terminal. Figure 14 is an example for the implementation. Using this implementation the recovery time from an OCP mode to the normal operation can be increased. 5V SX68000MH Shut down 1 MΩ 3.3 or 5 V RFO FO 50 Ω CFO COM2 ¯¯Ō ¯ Internal Equivalent Circuit; demonstrating Figure 14. F̄ RFO and CFO implementation LIN Protection feature operation FO recovery time LO Filter 3.3 μs (typ) Filter 3.3 μs (typ) 2 V (typ) FO ¯¯Ō ¯ Recovery Figure 15. Timing Chart for F̄ 3.0 FO Recovery Time (ms) FO Recovery Time (ms) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.5 2.0 1.5 1.0 0.5 0 0 1000 2000 3000 4000 5000 0 0.002 RFO (kΩ) 0.006 0.008 0.010 CFO (μF) ¯¯Ō ¯ Recovery Time Versus RFO; CFO = 0.01 μF, VFO = 5 V Figure 16. F̄ SX68000MH-AN 0.004 ¯¯Ō ¯ Recovery Time Versus CFO; RFO = 1 MΩ, VFO = 5 V Figure 17. F̄ SANKEN ELECTRIC CO., LTD. 11 Application Information Figure 18 is an example of a typical application circuit. • Make the PCB circuit layout between the bootstrap capacitors, CB (≈ 1 μF) and the IC as short as possible to avoid malfunction due to noise. • Please be sure to connect W1 and W2, and V1 and V2, on the printed circuit board. • One of the bootstrap capacitors for the W phase can be populated between pin 24 (W1) and pin 25 (VB31). Also, because pin 27 (VB32) and pin 25 are internally connected, pin 27 can be left open. • When the current limiter is not used, please leave the OCL terminal open, and the SD terminal open or connected to GND (when significant external noise is expected). • Although the F̄¯¯Ō¯ terminal has an internal pull-up resistor of 1 MΩ, please connect a pull-up resistor RFO between the F̄¯¯Ō¯ terminal and a 5 V or 3.3 V power supply in consideration a noise reduction capability. Please note, if the F̄¯¯Ō¯ terminal is connected to the 5 V or 3.3 V without the pull-up resistor, the thermal protection (TSD) function is disabled (low-side UVLO protection and Overcurrent Protection functions remain enabled). • Place a ceramic capacitor, CBYP (0.01 to 0.1 μF) between VCC1 and COM1, as well as VCC2 and COM2, to avoid malfunction due to noise. Make the PCB circuit layout between these capacitors and the IC as short as possible. • Make the PCB circuit layout between current sense resistor, RS , inserted between LS and COM2, and the IC as wide and as short as possible to avoid malfunction due to noise. • Place a ceramic capacitor, CFO (0.001 to 0.01 μF) between the F̄¯¯Ō¯ and COM2 terminals to avoid malfunction due to noise. VB1 15 V VB2 VB32 VB31 DB1 RB1 VCC1 DB2 RB2 DB3 RB3 CBYP UVLO HIN1 HIN2 HIN3 Input Logic VBB1 VBB2 UVLO UVLO UVLO CB1 High Side Level Shift Driver COM1 System 5V Control To regulator Block （MCU） CBYP 5V RFO SD VCC2 REG LIN1 LIN2 LIN3 REG UVLO Input Logic (OCP reset) CB2 CB3 W1 W2 V V1 V2 U BLDCM CS Low Side Driver COM2 FO Thermal Shutdown OCP OCP and OCL LS OCL RS Figure 18. Typical Application Circuit; with a 5 V MCU (with current limiter configured) SX68000MH-AN SANKEN ELECTRIC CO., LTD. 12 Figure 19 shows the recommended PCB footprint solder pad layout. When designing, please consider ease of mounting, reliability of connection, wiring space, whether or not it generates solder bridges, and so forth. Pin18 Pin 27 Recommended PCB pattern layout Pin 17 Pin 1 Figure 19. Example Footprint Pattern Layout; please perform sufficient mounting evaluation at your company when designing PCB Measurement point of IC case temperature Table 5 shows the thermal resistance data for the SX68000MH series. Figure 20 shows the point of measurement for case temperature for the thermal resistance data. Table 5. Thermal Resistance Symbol Rating (°C/W) Junction to Case* RθJC 15 Junction to Ambient* RθJA 41.7 *Mounted on 1.6 mm thick CEM-3 PCB, with 35 μm thick copper layer, without overmolding, in still air. 7.65 mm 4 mm – Measurement point Figure 20. Temperature Measurement Point; located on top face of device case SX68000MH-AN SANKEN ELECTRIC CO., LTD. 13 Cautions and Warnings • Power supply sequence • Surge suppression Powering-on the IC has no specific sequencing requirements. However, please ensure that the minimum controlling voltage, VCC , has been established before sending input to the HIN or LIN terminals. Please reduce applied surges to each terminal by adding ceramic capacitors or Zener diodes, or other measures. Surges may cause not only malfunction but also damage the IC. Make sure to fully consider this point. • Input dead-time • Short-circuit protection This IC does not contain a protection circuit for ground-fault. Please make sure not to cause ground-fault mode. Please set dead-time externally (no internal setting), so as not to cause shoot-through (high to low short-circuit). 1.5 μs or longer is recommended for the SX68000MH series. • Distance between terminals • Heat dissipation The SX68000MH series uses an SOP 27-pin package and the distance between the terminals is 1.2 mm pitch. It is recommended to apply overcoating or overmolding between the terminals and on the PCB. This IC is intended for use with small size motor controllers. Because of the package physical size and corresponding higher thermal resistances, it is strongly recommended to verify heat dissipation experimentally in the actual application in a design phase. SX68000MH-AN SANKEN ELECTRIC CO., LTD. 14 Performance Characteristics Applicable to all SX68000MH series 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 -25 Power Supply Input Current versus Junction Temperature Input on, VCC = 15 V, VIN = 5 V, 3 phases Typ. Min. 0 25 50 75 100 125 ICC (mA) Max. 150 Max. Typ. Min. 0 25 50 75 100 125 150 TJ (°C) Bootstrap Current versus Junction Temperature Input off, VCC = 15 V, VIN = 0 V Bootstrap Current versus Junction Temperature Input on, VCC = 15 V, VIN = 5 V 400 400 350 350 300 300 250 Max. 200 150 Typ. 100 Min. 50 Max. 250 200 Typ. 150 100 Min. 50 0 0 -25 0 25 50 75 100 125 -25 150 0 25 50 75 100 125 150 TJ (°C) TJ (°C) Power Supply Input Current versus Voltage Input off, VCC = 15 V, 3 phases Bootstrap Current versus Bootstrap Voltage Input off, VB = 15 V 6.0 250 5.0 TJ = 25°C 4.5 TJ = –20°C IBOOT (μA) TJ = 125°C 5.5 ICC (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 -25 TJ (°C) IBOOT (μA) IBOOT (μA) ICC (mA) Power Supply Input Current versus Junction Temperature Input off, VCC = 15 V, VIN = 0 V 4.0 200 TJ = 125°C 150 TJ = 25°C 100 TJ = –20°C 50 3.5 3.0 12 13 14 15 16 17 18 19 20 0 12 13 VCC (V) SX68000MH-AN 14 15 16 17 18 19 20 VB (V) SANKEN ELECTRIC CO., LTD. 15 Applicable to all SX68000MH series Power Supply Input Current versus Voltage VCC = 15 V, Logic on (output on), 3 phase 6.5 300 TJ = 125°C 6.0 TJ = 125°C IBOOT (μA) 250 5.5 ICC (mA) Bootstrap Current versus Bootstrap Voltage VB = 15 V, Logic on (output on) TJ = 25°C 5.0 4.5 TJ = –20°C 4.0 TJ = 25°C 200 150 TJ = –20°C 100 50 3.5 3.0 0 12 13 14 15 16 17 18 19 20 12 13 14 VCC (V) 1.8 1.6 1.6 1.4 1.2 1.2 0 25 50 75 100 125 1.0 -25 150 Min. 0 25 50 75 100 125 150 TJ (°C) MOSFET Switch-On Delay versus Junction Temperature HIN input to high-side output (HO) MOSFET gate (internal) MOSFET Switch-On Delay versus Junction Temperature LIN input to low-side output (LO) MOSFET gate (internal) 1100 1100 Max. 1000 900 Typ. 800 700 600 500 Input Delay(L) (ns) Input Delay(H) (ns) Max. Typ. 1.8 TJ (°C) 400 Max. 1000 900 800 Typ. 700 600 500 400 300 300 0 25 50 75 100 125 -25 150 0 25 MOSFET Switch-On Minimum Pulse Width versus Junction Temperature HIN input Typ. 25 50 75 100 125 150 twON(L)(min) (ns) Max. 0 50 75 100 125 150 TJ (°C) TJ (°C) twON(H)(min) (ns) 20 2.0 1.4 500 450 400 350 300 250 200 150 100 50 0 -25 MOSFET Switch-On Minimum Pulse Width versus Junction Temperature LIN input Max. Typ. 0 TJ (°C) SX68000MH-AN 19 2.2 VIL (V) VIH (V) 2.0 -25 18 2.4 Max. Typ. Min. 2.2 500 450 400 350 300 250 200 150 100 50 0 17 Input Threshold Voltage versus Junction Temperature Logic off (output off) 2.4 -25 16 VB (V) Input Threshold Voltage versus Junction Temperature Logic on (output on) 1.0 -25 15 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 16 Applicable to all SX68000MH series Input Terminal High Current versus Junction Temperature VIN = 5 V 1200 700 1000 600 800 500 IINH (μA) Gate Output Pulse Width (ns) Output MOSFET Gate Pulse Width versus Input Pulse Width Typical values at TJ = 25°C, VCC = 15 V 600 400 300 Low side 400 Min. 100 0 -25 0 200 Typ. 400 200 High side 200 0 Max. 600 800 1000 1200 0 25 Input Pulse Width (ns) 12.0 11.5 11.5 Min. 9.5 150 Max. Typ. 10.5 Typ. 10.0 9.5 9.0 9.0 8.5 8.5 8.0 8.0 0 25 50 75 100 125 150 -25 0 25 TJ (°C) 50 75 100 125 150 TJ (°C) Low-Side Undervoltage Lockout Enable Threshold versus Junction Temperature Low-Side Undervoltage Lockout Release Threshold versus Junction Temperature 13.0 13.0 12.5 Typ. 11.5 11.0 Min. 10.5 12.0 11.5 Min. 11.0 10.5 10.0 10.0 9.5 9.5 9.0 9.0 -25 0 25 50 75 100 125 150 -25 0 TJ (°C) SX68000MH-AN Max. Typ. 12.5 Max. VUVLH (V) 12.0 VUVLL (V) 125 11.0 VUVHH (V) VUVHL (V) Max. Typ. 10.0 -25 100 High-Side Undervoltage Lockout Release Threshold versus Junction Temperature 12.0 10.5 75 TJ (°C) High-Side Undervoltage Lockout Enable Threshold versus Junction Temperature 11.0 50 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 17 Applicable to all SX68000MH series Low-Side Undervoltage Lockout Filter versus Junction Temperature 35 14 30 12 25 20 15 Max. 10 Typ. 5 0 25 50 75 100 125 10 8 6 Max. 4 Typ. 2 Min. 0 -25 UVLO Filter (μs) VB UVLO Filter (μs) High-Side (VB) Undervoltage Lockout Filter versus Junction Temperature 0 -25 150 Min. 0 25 Overcurrent Limiter Reference High Threshold Voltage versus Junction Temperature 0.66 Typ. 0.65 Min. VTRIPH (V) VLIMH (V) 150 Max. 1.06 Max. 0.67 0.64 1.04 Typ. 1.02 Min. 1.00 0.63 0.62 0.98 0 25 50 75 100 125 150 -25 0 25 TJ (°C) 50 75 100 125 150 TJ (°C) Blanking Time (OCL, OCP) versus Junction Temperature Overcurrent Protection Hold Time versus Junction Temperature 3.5 40 3.0 2.5 Typ. 2.0 Min. 1.5 Max. 35 Max. 30 tP (μs) tbk (μs) 125 1.08 0.68 Typ. 25 Min. 20 15 10 5 0 1.0 0 25 50 75 100 125 150 -25 0 TJ (°C) SX68000MH-AN 100 Overcurrent Protection Trip High Threshold Voltage versus Junction Temperature 0.69 -25 75 TJ (°C) TJ (°C) -25 50 25 50 75 100 125 150 TJ (°C) SANKEN ELECTRIC CO., LTD. 18 Applicable to all SX68000MH series Fault Signal Input (FO) Gate Off Release Voltage versus Junction Temperature Output off Overcurrent Limit Output (OCL) Voltage versus Junction Temperature 5.4 2.4 Typ. 5.2 Max. Min. 4.6 VFOH (V) VOCL (V) 4.8 Max. 2.2 5.0 4.4 Typ. 2.0 Min. 1.8 1.6 1.4 4.2 4.0 -25 0 25 50 75 100 125 1.2 -25 150 0 25 Fault Signal Input (FO) Gate Off Enable Voltage versus Junction Temperature Output off 2.0 1.8 Max. Typ. Min. 1.6 FO Filter (μs) VFOL (V) 2.2 1.4 25 50 75 100 125 150 -25 150 Max. Typ. Min. 0 25 50 75 100 125 150 TJ (°C) Fault Signal Output (FO) On Voltage versus Junction Temperature Output on, external pull-up to 5 V via 3.3 kΩ resistor High-Side Shutdown (SD) High Threshold Voltage versus Junction Temperature 350 3.6 Typ. Max. Min. 250 200 Max. VSDH ( V ) 300 VFO (mV) 125 9 8 7 6 5 4 3 2 1 0 TJ (°C) 3.2 Typ. Min. 2.8 2.4 150 2.0 100 -25 100 Fault Signal Input (FO) Filter versus Junction Temperature 2.4 0 75 TJ (°C) TJ (°C) 1.2 -25 50 0 25 50 75 100 125 150 -25 0 TJ (°C) 25 50 75 100 125 150 TJ (°C) ¯¯Ō ¯ is an input/output terminal. Note: F̄ SX68000MH-AN SANKEN ELECTRIC CO., LTD. 19 Applicable to all SX68000MH series High-Side Shutdown (SD) Filter versus Junction Temperature High-Side Shutdown (SD) Low Threshold Voltage versus Junction Temperature 3.2 Typ. 2.4 SD Filter (μs) VSDL (V) 2.8 Max. Min. 2.0 1.6 -25 0 25 50 75 100 125 150 9 8 7 6 5 4 3 2 1 0 -25 Max. Typ. Min. 0 25 7.5 V Regulated Output (REG) Voltage versus Junction Temperature VCC = 15 V, IREG = 0 A 100 125 150 7.5 V Regulated Output (REG) Voltage versus Junction Temperature VCC = 15 V, IREG = 35 mA 8.3 8.3 8.1 8.1 7.9 Max. 7.7 Typ. 7.5 Min. 7.9 VREG (V) VREG (V) 75 TJ (°C) TJ (°C) 7.3 7.7 7.5 Max. 7.3 Typ. 7.1 7.1 6.9 6.9 6.7 -25 50 Min. 6.7 0 25 50 75 100 125 150 -25 0 25 TJ (°C) 50 75 100 125 150 TJ (°C) Typical 7.5 V Regulated Output (REG) Voltage versus Current VCC = 15 V 8.3 8.1 VREG (V) 7.9 7.7 TJ = –20°C 7.5 TJ = 25°C TJ = 125°C 7.3 7.1 6.9 6.7 0 5 10 15 20 25 30 35 IREG (mA) SX68000MH-AN SANKEN ELECTRIC CO., LTD. 20 MOSFET Characteristics Applicable to SX68001MH On-Resistance versus Drain Current VGS = 15 V Source to Drain Current versus Voltage VGS = 0 V 2.0 4 TJ = 125°C 1.5 TJ = 125°C TJ = 75°C 2 TJ = 25°C ISD (A) RDS(on) (Ω) 3 1.0 TJ = 75°C 0.5 1 TJ = 25°C 0 0 0 0.5 1.0 1.5 2.0 0 0.2 0.4 ID (A) Switching Loss versus Drain Current VBB = 150 V, VCC = 15 V, TJ = 25°C 1.0 1.2 50 EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) 30 EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) 40 E (μJ) 40 E (μJ) 0.8 Switching Loss versus Drain Current VBB = 150 V, VCC = 15 V, TJ = 125°C 50 20 10 30 20 10 0 0 0 0.5 1.0 1.5 0 2.0 0.5 1.0 1.5 2.0 ID (A) ID (A) Recovery Loss versus Drain Current VBB = 150 V, VCC = 15 V, TJ = 25°C Recovery Loss versus Drain Current VBB = 150 V, VCC = 15 V, TJ = 125°C 5 5 4 4 3 Low Side 2 High Side 1 0 E (μJ) E (μJ) 0.6 VSD (V) 3 Low Side 2 High Side 1 0 0 0.5 1.0 1.5 2.0 0 ID (A) SX68000MH-AN 0.5 1.0 1.5 2.0 ID (A) SANKEN ELECTRIC CO., LTD. 21 MOSFET Characteristics Applicable to SX68002MH On-Resistance versus Drain Current VGS = 15 V 8 1.5 TJ = 125°C 7 6 TJ = 75°C 5 4 TJ = 125°C 1.0 ISD (A) RDS(on) (Ω) Source to Drain Current versus Voltage VGS = 0 V TJ = 25°C 3 TJ = 75°C 0.5 2 TJ = 25°C 1 0 0 0 0.5 1.0 1.5 0 0.2 0.4 ID (A) 0.8 1.0 1.2 1.4 VSD (V) Switching Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 25°C Switching Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 125°C 200 200 EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) 150 E (μJ) 150 E (μJ) 0.6 100 50 100 50 0 0 0 0.5 1.0 0 1.5 0.5 ID (A) 1.0 1.5 ID (A) Recovery Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 25°C Recovery Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 125°C 15 15 10 10 Low Side 5 E (μJ) E (μJ) Low Side High Side 5 High Side 0 0 0 0.5 1.0 1.5 0 ID (A) SX68000MH-AN 0.5 1.0 1.5 ID (A) SANKEN ELECTRIC CO., LTD. 22 MOSFET Characteristics Applicable to SX68003MH On-Resistance versus Drain Current VGS = 15 V 5 Source to Drain Current versus Voltage VGS = 0 V 2.5 TJ = 125°C 2.0 TJ = 75°C 3 TJ = 25°C 2 TJ = 125°C ISD (A) RDS(on) (Ω) 4 1 1.5 TJ = 75°C 1.0 TJ = 25°C 0.5 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 ID (A) Switching Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 25°C Switching Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 125°C 300 300 EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) 200 EON (High Side) EOFF (High Side) EON (Low Side) EOFF (Low Side) 250 200 E (μJ) 250 E (μJ) 1.5 VSD (V) 150 150 100 100 50 50 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 ID (A) ID (A) Recovery Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 25°C Recovery Loss versus Drain Current VBB = 300 V, VCC = 15 V, TJ = 125°C 15 15 10 10 2.5 E (μJ) Low Side High Side 5 0 E (μJ) Low Side High Side 5 0 0 0.5 1.0 1.5 0 SX68000MH-AN 0.5 1.0 1.5 ID (A) ID (A) SANKEN ELECTRIC CO., LTD. 23 • The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. • Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. • When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. • Anti radioactive ray design is not considered for the products listed herein. • Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network. • The contents in this document must not be transcribed or copied without Sanken's written consent. SX68000MH-AN SANKEN ELECTRIC CO., LTD. 24