FSR1110D, FSR1110R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. March 2000 File Number 4828.1 Features • 1.0A, 100V, rDS(ON) = 0.680Ω • Contains Four Isolated and Independent N-Channel MOSFETs • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 0.3nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Packaging 14 PIN DIP Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSR1110D1 100K TXV FSR1110R3 100K Space FSR1110R4 Pinout D3 1 14 D2 S3 2 13 S2 G3 3 12 G2 NC 4 11 NC G4 5 10 G1 S4 6 9 S1 D4 7 8 D1 Formerly available as type TA45032. Symbol D G S 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 FSR1110D, FSR1110R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSR1110D, FSR1110R UNITS 100 100 V V 1.0 0.6 3.0 ±20 A A A V 1.25 0.5 0.01 3.0 1.0 3.0 -55 to 150 300 W W W/ oC A A A oC oC Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) rDS(ON)12 Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA VDS = 80V, VGS = 0V VGS = ±20V TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC VGS = 12V, ID = 1.0A ID = 0.6A, VGS = 12V TC = 25oC TC = 125oC VDD = 50V, ID = 1.0A, RL = 50Ω, VGS = 12V, RGS = 7.5Ω td(OFF) Fall Time tf Total Gate Charge Qg(TOT) VGS = 0V to 20V Gate Charge at 12V Qg(12) VGS = 0V to 12V Threshold Gate Charge Qg(TH) VGS = 0V to 2V VDD = 50V, ID = 1.0A MIN TYP MAX UNITS 100 - - V - - 5.0 V 1.5 - 4.0 V 0.5 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - 0.71 V - 0.570 0.680 Ω - - 1.09 Ω - - 15 ns - - 15 ns - - 25 ns - - 20 ns - - 14 nC - 8.7 9.7 nC - - 0.54 nC Gate Charge Source Qgs - 1.4 1.7 nC Gate Charge Drain Qgd - 4.2 4.7 nC Plateau Voltage V(PLATEAU) ID = 1.0A, VDS = 15V - 6 - V Input Capacitance CISS - 155 - pF Output Capacitance COSS VDS = 25V, VGS = 0V, f = 1MHz - 70 - pF Reverse Transfer Capacitance CRSS - 20 - pF 100 oC/W Thermal Resistance Junction to Ambient 2 RθJA - - FSR1110D, FSR1110R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS MIN TYP MAX UNITS 0.6 - 1.8 V - - 110 ns ISD = 1.0A trr ISD = 1.0A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 100 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 80V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 1.0A - 0.710 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 0.6A - 0.680 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) TEST SYMBOL ION SPECIES Single Event Effects Safe Operating Area SEESOA Ni 28 43 -20 100 Br 37 36 -10 100 Br 37 36 -15 80 Br 37 36 -20 50 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). 3 FSR1110D, FSR1110R Typical Performance Curves LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ LIMITING INDUCTANCE (HENRY) 120 1E-3 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 100 VDS (V) 80 60 40 20 TEMP = 25oC 0 0 -5 -10 -15 -20 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 10 -25 30 VGS (V) 100 1000 300 DRAIN SUPPLY (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 1.2 10 TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN (A) 1.0 0.8 0.6 0.4 5ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.2 0 -50 0 50 100 0.1 0.1 150 TC , CASE TEMPERATURE (oC) 1 50ms 10 100 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 12V QG QGS QGD VG NORMALIZED rDS(ON) PULSE DURATION = 250ms,VGS = 12V, ID = 0.6A 2.0 1.5 1.0 0.5 CHARGE 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. BASIC GATE CHARGE WAVEFORM 4 FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FSR1110D, FSR1110R Typical Performance Curves (Continued) 10 T1 P1 .73P2 .73P3 .73P4 .73P1 P2 .73P3 .73P4 .73P1 .73P2 P3 .73P4 .73P1 .73P2 .73P3 P4 1 T2 0.5 0.1 T3 0.2 0.1 = T4 0.05 0.02 SINGLE PULSE PDM 0.01 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-4 10-3 10-2 10-1 100 t1 t2 101 102 103 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 10 IAS , AVALANCHE CURRENT (A) THERMAL RESPONSE (ZθJC) THERMAL MATRIX STARTING TJ = 25oC 1 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING 5 10 _ ] * [R0JA FSR1110D, FSR1110R Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD 50V-150V DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50Ω tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 6 FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FSR1110D, FSR1110R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Unclamped Inductive Switching VGS(PEAK) = 15V, L = 0.1mH; Limit = 3.0A Thermal Response tH = 100ms; VH = 15V; IH = 0.15A; LIMIT = 62mV tH = 100ms; VH = 15V; IH = 0.15A; LIMIT = 62mV Gate Stress VGS = 30V, t = 250µs VGS = 30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 VGS(PEAK) = 15V, L = 0.1mH; Limit = 3.0A NOTE: 9. Test limits are identical pre and post burn-in. Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 80V, t = 10ms 0.58 A Thermal Impedance ∆VSD tH = 500ms; VH = 13V; IH = 0.50A 260 mV 7 FSR1110D, FSR1110R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE F. Group A - Attributes Data Sheet A. Certificate of Compliance G. Group B - Attributes Data Sheet B. Assembly Flow Chart H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D 8 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSR1110D, FSR1110R MO-036AB 14 LEAD CERAMIC SIDE LEADED DUAL IN LINE PACKAGE (DIP) 14 8 1 INCHES 7 INDEX MARK H1 E D L1 e1 b1 L b e2 SEATING PLANE MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.290 0.325 7.37 8.25 - A1 0.280 0.310 7.12 7.87 - b 0.015 0.021 0.38 0.53 - b1 0.038 0.060 0.97 1.52 - c 0.008 0.012 0.21 0.30 - D 0.105 0.175 2.67 4.44 - E 0.730 0.770 18.55 19.55 - e 0.290 0.325 7.37 8.25 3 e1 0.100 Typ. 2.54 Typ. 2 e2 0.600 BSC 15.24 BSC 2 H1 0.010 - 0.25 - - L 0.125 0.175 3.18 4.44 - L1 0.025 0.055 0.64 1.39 - M 0o 15o 0o 15o 3 NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC MO-036AB outline dated 4-81. 2. Position of leads to be measured a maximum of 0.030 (0.76mm) from bottom of Seating Plane. 3. Applies to spread of leads prior to installation. 4. Controlling dimension: Inch. 5. Revision 1 dated 1-00. 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