INTERSIL FSYA254D3

FSYA254D, FSYA254R
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
March 1999
• 21A, 250V, rDS(ON) = 0.150Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 15nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
SCREENING LEVEL
SMD-1
PART NO./BRAND
10K
Commercial
FSYA254D1
10K
TXV
FSYA254D3
100K
Commercial
FSYA254R1
100K
TXV
FSYA254R3
100K
Space
FSYA254R4
4-1
S
Packaging
Ordering Information
RAD LEVEL
4677
Features
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17658.
File Number
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
FSYA254D, FSYA254R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s (Max)
FSYA254D, FSYA254R
250
250
UNITS
V
V
21
14
63
±20
A
A
A
V
150
60
1.20
63
21
63
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
On Resistance
IDSS
Fall Time
Total Gate Charge
250
-
-
V
TC = -55oC
-
-
5.0
V
TC = 25oC
1.5
-
4.0
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
0.5
-
-
V
-
-
25
µA
-
-
250
µA
-
100
nA
200
nA
-
-
3.31
V
-
0.120
0.150
Ω
-
-
0.276
Ω
-
-
40
ns
-
-
65
ns
td(OFF)
-
-
80
ns
tf
-
-
15
ns
-
-
260
nC
-
130
150
nC
-
-
10
nC
-
27
36
nC
VDS(ON)
VGS = 12V, ID = 21A
ID = 14A,
VGS = 12V
TC = 25oC
TC = 125oC
VDD = 125V, ID = 21A,
RL = 6.0Ω, VGS = 12V,
RGS = 2.35Ω
Qg(TOT)
VGS = 0V to 20V
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
Gate Charge Source
VDD = 125V,
ID = 21A
Qgs
Gate Charge Drain
-
58
76
nC
ID = 21A, VDS = 15V
-
8
-
V
VDS = 25V, VGS = 0V,
f = 1MHz
-
3000
-
pF
-
550
-
pF
-
150
-
pF
0.83
oC/W
Qgd
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
4-2
UNITS
-
tr
Turn-Off Delay Time
MAX
-
td(ON)
Rise Time
VGS = ±20V
TYP
-
IGSS
rDS(ON)12
Turn-On Delay Time
VDS = 200V,
VGS = 0V
MIN
RθJC
-
-
FSYA254D, FSYA254R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
TEST CONDITIONS
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
820
ns
ISD = 21A
trr
ISD = 21A, dISD/dt = 100A/µs
Electrical Specifications up to 100K RAD
TC = 25oC, Unless Otherwise Specified
MIN
MAX
UNITS
Drain to Source Breakdown Volts
PARAMETER
(Note 3)
SYMBOL
BVDSS
VGS = 0, ID = 1mA
TEST CONDITIONS
250
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate-Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero-Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 200V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 21A
-
3.31
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 14A
-
0.150
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT (NOTE 5)
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
-20
250
TEST
SYMBOL
ION
SPECIES
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
Br
37
36
-5
250
Br
37
36
-10
200
Br
37
36
-15
125
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
300
1E-3
LIMITING INDUCTANCE (H)
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
VDS (V)
200
100
TEMP = 25oC
0
0
-5
-10
VGS (V)
-15
-20
-25
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
4-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
10
30
100
300
DRAIN SUPPLY (V)
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
1000
FSYA254D, FSYA254R
Typical Performance Curves
Unless Otherwise Specified
(Continued)
26
TC = 25oC
100
ID , DRAIN CURRENT (A)
ID , DRAIN (A)
20
10
100ms
10
1µs
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
0
-50
0
50
100
150
1
TC , CASE TEMPERATURE (oC)
10ms
10
100
1000
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING CURVE
2.5
PULSE DURATION = 250µs, VGS = 12V, ID = 14A
2.0
QGS
NORMALIZED rDS(ON)
QG
12V
QGD
VG
1.5
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
NORMALIZED
THERMAL RESPONSE (ZθJC)
10
1
0.5
0.1
0.01
0.001
10-5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4-4
t1
t2
100
101
FSYA254D, FSYA254R
Typical Performance Curves
Unless Otherwise Specified
(Continued)
IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
50V-150V
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50Ω
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
VDD
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
VGS = 12V
10%
10%
DUT
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
4-5
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FSYA254D, FSYA254R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
On Resistance
rDS(ON)
TC = 25oC at Rated ID
±20% (Note 8)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = 30V, t = 250µs
VGS = 30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
Safe Operating Area
SOA
Unclamped Inductive Switching
TEST CONDITIONS
VDS = 200V, t = 10ms
MAX
UNITS
1.77
A
IAS
VGS(PEAK) = 15V, L = 0.1mH
63
A
Thermal Response
∆VSD
tH = 10ms; VH = 25V; IH = 4A
70
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = 20V; IH = 4A,
HEAT SINK REQUIRED
159
mV
4-6
FSYA254D, FSYA254R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
- Attributes Data Sheet
A. Certificate of Compliance
G. Group B
- Attributes Data Sheet
B. Assembly Flow Chart
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
4-7
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FSYA254D, FSYA254R
SMD-1
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
E
D
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.129
0.139
3.27
3.53
-
b
0.135
0.145
3.43
3.68
-
D
0.445
0.455
11.30
11.55
-
D1
0.370
0.380
9.39
9.65
-
D2
0.100
0.110
2.54
2.79
-
E
0.620
0.630
15.74
16.00
-
E1
0.410
0.420
10.41
10.66
-
E2
0.152
0.162
3.86
4.11
-
NOTES:
A
1. No current JEDEC outline for this package.
2. Controlling dimension: INCH.
3. Revision 2 dated 6-98.
E2
E1
2
D1
D2
3
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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4-8
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