MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPZ60R040C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPZ60R040C7 1Description PG-TO247-4 CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4pinkelvinsourceconcept Drain Pin 1 Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 40 mΩ Qg.typ 107 nC ID,pulse 211 A ID,continuous @ Tj<150°C 73 A Eoss@400V 12.6 µJ Body diode di/dt 480 A/µs Type/OrderingCode Package Marking IPZ60R040C7 PG-TO 247-4 60C7040 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 50 32 A TC=25°C TC=100°C - 211 A TC=25°C - - 249 mJ ID=7.4A; VDD=50V; see table 10 EAR - - 1.24 mJ ID=7.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 7.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 227 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 50 A TC=25°C Diode pulse current2) IS,pulse - - 211 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=11.4A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 480 A/µs VDS=0...400V,ISD<=11.4A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 4 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.55 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=1.24mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.034 0.077 0.040 - Ω VGS=10V,ID=24.9A,Tj=25°C VGS=10V,ID=24.9A,Tj=150°C Gate resistance RG - 0.77 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4340 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 85 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 158 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 1640 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Turn-off delay time td(off) - 81 - ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Fall time tf - 3.2 - ns VDD=400V,VGS=13V,ID=24.9A, RG=3.3Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 22 - nC VDD=400V,ID=24.9A,VGS=0to10V Gate to drain charge Qgd - 36 - nC VDD=400V,ID=24.9A,VGS=0to10V Gate charge total Qg - 107 - nC VDD=400V,ID=24.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=24.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=24.9A,Tj=25°C 460 - ns VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 - 9.2 - µC VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 - 40 - A VR=400V,IF=24.9A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 103 250 100 µs 1 ms 102 200 1 µs 10 µs 10 ms DC 101 ID[A] Ptot[W] 150 100 100 10-1 50 0 10-2 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 100 µs 1 ms 102 10 µs 1 µs 10 ms 0.5 DC ZthJC[K/W] ID[A] 101 0 10 0.2 10 -1 0.1 10-1 0.05 0.02 10-2 0.01 single pulse 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 350 250 20 V 300 10 V 200 8V 7V 250 20 V 10 V 8V 7V 150 6V ID[A] ID[A] 200 150 100 5.5 V 6V 100 5.5 V 5V 50 50 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.13 0.10 5.5 V 6.5 V 6V 0.09 0.12 7V 0.08 0.11 0.07 RDS(on)[Ω] RDS(on)[Ω] 10 V 20 V 0.10 0.06 98% 0.05 0.09 typ 0.04 0.08 0.03 0.07 0 20 40 60 80 100 120 140 160 180 0.02 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=24.9A;VGS=10V 9 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 350 12 120 V 300 10 25 °C 400 V 250 8 ID[A] VGS[V] 200 150 6 150 °C 4 100 2 50 0 0 2 4 6 8 10 0 12 0 20 40 VGS[V] 60 80 100 120 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 250 225 200 125 °C 101 175 25 °C IF[A] EAS[mJ] 150 100 125 100 75 50 25 10-1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=7.4A;VDD=50V 10 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 640 C[pF] VBR(DSS)[V] 103 620 600 Coss 102 580 560 101 540 Crss 520 -60 -30 0 30 60 90 120 150 100 0 100 Tj[°C] 200 300 400 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 14 12 Eoss[µJ] 10 8 6 4 2 0 0 100 200 300 400 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 7PackageOutlines Figure1OutlinePG-TO247-4 Final Data Sheet 13 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 8AppendixA Table11RelatedLinks • IFXCoolMOSTMC7Webpage:www.infineon.com • IFXCoolMOSTMC7applicationnote:www.infineon.com • IFXCoolMOSTMC7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2015-05-08 600VCoolMOS™C7PowerTransistor IPZ60R040C7 RevisionHistory IPZ60R040C7 Revision:2015-05-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-05-08 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2015-05-08