MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPD60R180C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPD60R180C7 1Description DPAK CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. tab 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². 1 2 3 Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 180 mΩ Qg.typ 24 nC ID,pulse 45 A ID,continuous @ Tj<150°C 22 A Eoss@400V 2.7 µJ Body diode di/dt 350 A/µs Type/OrderingCode Package Marking IPD60R180C7 PG-TO 252 60C7180 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 13 8 A TC=25°C TC=100°C - 45 A TC=25°C - - 53 mJ ID=3.3A; VDD=50V; see table 10 EAR - - 0.26 mJ ID=3.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 3.3 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 68 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - Continuous diode forward current IS - - 13 A TC=25°C Diode pulse current2) IS,pulse - - 45 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=5.2A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 350 A/µs VDS=0...400V,ISD<=5.2A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 4 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.832 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 °C Final Data Sheet 5 reflow MSL1 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.26mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.155 0.346 0.180 - Ω VGS=10V,ID=5.3A,Tj=25°C VGS=10V,ID=5.3A,Tj=150°C Gate resistance RG - 0.85 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1080 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 18 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 34 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 349 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.3 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω;seetable9 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω;seetable9 Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate charge total Qg - 24 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=5.3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=5.3A,Tj=25°C 280 - ns VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8 - 2.6 - µC VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8 - 21 - A VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 80 100 µs 70 10 ms 10 1 DC 60 50 100 ID[A] Ptot[W] 1 µs 10 µs 1 ms 40 10-1 30 20 10-2 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 100 µs 10 µs 1 µs 1 ms 10 ms 101 DC 100 ID[A] ZthJC[K/W] 100 -1 10 0.2 0.1 10-1 10-2 10-3 0.5 0.05 0.02 0.01 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 80 40 20 V 70 35 10 V 7V 8V 20 V 10 V 8V 60 6V 7V 25 ID[A] 50 ID[A] 30 40 30 5.5 V 20 15 6V 5V 20 10 5.5 V 10 4.5 V 5 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.53 0.43 5.5 V 6V 0.51 0.38 0.49 RDS(on)[Ω] 7V 0.45 RDS(on)[Ω] 0.33 6.5 V 0.47 10 V 0.43 20 V 0.41 0.39 98% 0.28 typ 0.23 0.18 0.37 0.13 0.35 0.33 0 10 20 30 0.08 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=5.3A;VGS=10V 9 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 70 12 120 V 25 °C 60 400 V 10 50 8 VGS[V] ID[A] 40 150 °C 30 6 4 20 2 10 0 0 2 4 6 8 10 0 12 0 5 10 VGS[V] 15 20 25 30 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=5.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 60 50 101 40 EAS[mJ] 25 °C IF[A] 125 °C 100 30 20 10 10-1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.3A;VDD=50V 10 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 103 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 101 580 560 100 Crss 540 520 -60 -30 0 30 60 90 120 150 10-1 0 100 Tj[°C] 200 300 400 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 3.0 2.5 Eoss[µJ] 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 8AppendixA Table11RelatedLinks • IFXCoolMOSTMC7Webpage:www.infineon.com • IFXCoolMOSTMC7applicationnote:www.infineon.com • IFXCoolMOSTMC7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2015-08-10 600VCoolMOS™C7PowerTransistor IPD60R180C7 RevisionHistory IPD60R180C7 Revision:2015-08-10,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-08-10 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2015-08-10