INTERSIL X60008D-41

X60008B-41, X60008C-41, X60008D-41
®
Data Sheet
March 14, 2005
Precision 4.096V FGA™ Voltage
Reference
FN8142.0
DESCRIPTION
The X60008-41 FGA™ voltage references are very
high precision analog voltage references fabricated in
Intersil’s proprietary Floating Gate Analog technology,
which achieves superior levels of performance when
compared to conventional band gap, buried zener, or
XFET™ technologies.
FEATURES
• Output Voltage: 4.096V
• Absolute Initial Accuracy Options:
±0.5mV & ±1.0mV
• Ultra Low Power Supply Current: 500nA
• Low Temperature Coefficient options:
3, 5 & 10ppm/°C
• 10 mA Source & Sink Current Capability
• 10 ppm/1000hrs Long Term Stability
• Very Low Dropout Voltage: 100 mV @ no load
• Supply Voltage Range: 4.5V to 9.0V
• 5kV ESD (Human Body Model)
FGA™ voltage references feature very high initial
accuracy, very low temperature coefficient, excellent
long term stability, low noise and excellent line and
load regulation, at the lowest power consumption
currently available. These voltage references enable
advanced applications for precision industrial &
portable systems operating at significantly higher
accuracy and lower power levels than can be achieved
with conventional technologies.
• Standard Package: SOIC-8
• Temp Range: -40°C to +85°C
APPLICATIONS
• High Resolution A/Ds & D/As
• Precision Current Sources
• Smart sensors
• Digital Meters
• Precision Regulators
• Strain Gage Bridges
• Calibration Systems
• Precision Oscillators
• Threshold Detectors
• V-F Converters
• Battery Management Systems
• Servo Systems
TYPICAL APPLICATION
VIN = +5.0V
0.1µF
10µF
VIN
VOUT
X60008-41
0.001µF(*)
GND
REF IN
Serial
Bus
Enable
SCK
SDAT
16 to 24-bit
A/D Converter
(*)Also
1
see Figure 3 in Applications Information
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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X60008B-41, X60008C-41, X60008D-41
PACKAGE DIAGRAM
X60008-XX
SOIC
GND
1
8
DNC
VIN
2
7
DNC
DNC
3
6
VOUT
GND
4
5
DNC
PIN CONFIGURATIONS
Pin Name
GND
VIN
Description
Ground Connection
Power Supply Input Connection
VOUT
Voltage Reference Output Connection
DNC
Do Not Connect; Internal Connection – Must Be Left Floating
ORDERING INFORMATION
X 60008 X I S8 – 41
Logo
Device Part Number
60008 = Standard
Grade
B = ±0.5 mV, 3 ppm/°C
C = ±0.5 mV, 5 ppm/°C
D = ±1.0 mV, 10 ppm/°C
2
Temperature Range
I = -40°C to +85°C
Package
S8 = 8 lead SOIC
VOUT Option
41 = 4.096V
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
ABSOLUTE MAXIMUM RATINGS
COMMENT
Storage Temperature Range............. -65°C to +125°C
Voltage on any Pin
Referenced to Gnd............................. -0.5V to +10V
Voltage on “DNC” pins.........No connections permitted
to these pins.
Lead Temperature (soldering, 10 secs)........... +225°C
Absolute Maximum Ratings indicate limits beyond
which permanent damage to the device and impaired
reliability may occur. These are stress ratings provided
for information only and functional operation of the
device at these or any other conditions beyond those
indicated in the operational sections of this specification are not implied.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Industrial
-40°C
+85°C
For guaranteed specifications and test conditions, see
Electrical Characteristics.
The guaranteed specifications apply only for the test
conditions listed. Some performance characteristics
may degrade when the device is not operated under
the listed test conditions.
ELECTRICAL CHARACTERISTICS
(Operating Conditions: VIN = 5.0V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C unless otherwise specified.)
Symbol
Parameter
VOUT
Output Voltage
VOA
VOUT Accuracy
X60008B-41
X60008C-41
X60008D-41
IIN
Supply Current
VIN
Input Voltage Range
TC VOUT
Output Voltage
Temperature Coefficient(1)
∆VOUT/∆VIN
Conditions
Min
Typ
Max
4.096
Units
V
TA = 25°C
mV
-0.50
-0.50
-1.00
+0.50
+0.50
+1.00
800
nA
9.0
V
X60008B-41
X60008C-41
X60008D-41
3
5
10
ppm/°C
Line Regulation
+4.75V ≤ VIN ≤ +8.0V
150
µV/V
∆VOUT/∆IOUT
Load Regulation
0mA ≤ ISOURCE ≤ 10mA
-10mA ≤ ISINK ≤ 0mA
10
20
50
100
µV/mA
∆VOUT/∆t
Long Term Stability
TA = 25°C
10
ppm/1000Hrs
∆T = -40°C to +85°C
50
ppm
TA = 25°C
50
0.1Hz to 10Hz
30
∆VOUT/∆TA
Thermal
Hysteresis(2)
Current(3)
ISC
Short Circuit
VN
Output Voltage Noise
Note:
500
4.5
80
mA
µVpp
1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided
by the temperature range; in this case, -40°C to +85°C = 125°C.
2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at
TA = 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The
deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm.
3. Guaranteed by Device Characterization
3
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
LINE REGULATION
300
-40°C
250
DELTA VOUT (µV)
(normailized to VIN = 5.0V)
+25°C
200
+85°C
150
100
50
0
-50
-100
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
VIN (V)
LINE REGULATION
(3 Representative Units)
4.0963
Unit 2,
IIN = 520nA
VOUT (V)
(normailized to 4.096V at VIN = 5.0V)
4.09625
Unit 3,
IIN = 700nA
4.0962
4.09615
4.0961
Unit 1,
IIN = 360nA
4.09605
4.096
4.09595
4.0959
4.5
5.5
6.5
7.5
8.5
VIN (V)
4
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
LOAD REGULATION
0.6
0.4
0.3
+25°C
+85°C
0.2
-40°C
0.1
0.0
-0.1
-20
-15
-10
-5
0
5
10
15
20
SOURCING
SINKING
OUTPUT CURRENT (mA)
0.1Hz to 10Hz VOUT NOISE
Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz
10µV/div
DELTA VOUT (mV)
0.5
1 Sec/div
5
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
VOUT vs TEMPERATURE
Normalized to 25°C
(3 Representative Units)
4.0996
4.0984
VOUT (V)
Unit 3,
IIN = 700nA
Unit 2, IIN = 520nA
4.0972
4.096
Unit 1, IIN = 360nA
4.0948
4.0936
4.0924
4.0912
4.09
-40
-15
10
35
85
60
TEMPERATURE (°C)
PSRR vs CAP Load
0
No Load
-10
1nF Load
-20
PSRR (dB)
-30
10nF Load
-40
-50
-60
100nF Load
-70
-80
-90
-100
1
10
100
1000
10000
100000
1000000
FREQUENCY (Hz)
6
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
50µA LOAD TRANSIENT RESPONSE
10mA LOAD TRANSIENT RESPONSE
CL = .001µF
∆I IN = -10mA
∆I IN = +10mA
100mV/DIV
500mV/DIV
CL = .001µF
∆IIN = -50µA
∆I IN = +50µA
2mS/DIV
500µSEC/DIV
LINE TRANSIENT RESPONSE
LINE TRANSIENT RESPONSE
200mV/DIV
CL = .001µF
200mV/DIV
CL = 0
∆VIN = +500mV
∆VIN = -500mV
500µSEC/DIV
7
∆VIN = -500mV
∆VIN = +500mV
500µSEC/DIV
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
ZOUT vs FREQUENCY
350
300
no Load
ZOUT (Ω)
250
1nF Load
200
10nF Load
150
100
50
100nF Load
0
1
10
100
1000
10000
100000
FREQUENCY (Hz)
IIN vs VIN
800
-40°C
700
25°C
600
85°C
I IN (nA)
500
400
300
200
100
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
VIN (V)
8
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)
IIN vs VIN
(3 Representative Units)
1000
900
Unit 3
800
700
Unit 2
I IN (nA)
600
500
Unit 1
400
300
200
100
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
VIN (V)
TURN-ON TIME
6
VIN
5
VOUT
VIN & VOUT (V)
4
3
2
1
0
-1
1
3
5
7
9
11
TIME (mSec)
9
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
APPLICATIONS INFORMATION
FGA Technology
The X60008 series of voltage references use the floating gate technology to create references with very low
drift and supply current. Essentially the charge stored
on a floating gate cell is set precisely in manufacturing.
The reference voltage output itself is a buffered version of the floating gate voltage. The resulting reference device has excellent characteristics which are
unique in the industry: very low temperature drift, high
initial accuracy, and almost zero supply current. Also,
the reference voltage itself is not limited by voltage
bandgaps or zener settings, so a wide range of reference voltages can be programmed (standard voltage
settings are provided, but customer-specific voltages
are available).
The process used for these reference devices is a
floating gate CMOS process, and the amplifier circuitry
uses CMOS transistors for amplifier and output transistor circuitry. While providing excellent accuracy,
there are limitations in output noise level and load regulation due to the MOS device characteristics. These
limitations are addressed with circuit techniques discussed in other sections.
Nanopower Operation
Reference devices achieve their highest accuracy
when powered up continuously, and after initial stabilization has taken place. This drift can be eliminated by
leaving the power-on continuously.
The X60008 is the first high precision voltage reference
with ultra low power consumption that makes it practical
to leave power-on continuously in battery operated circuits. The X60008 consumes extremely low supply current due to the proprietary FGA technology. Supply
current at room temperature is typically 500nA which is
1 to 2 orders of magnitude lower than competitive
devices. Application circuits using battery power will
benefit greatly from having an accurate, stable reference which essentially presents no load to the battery.
In particular, battery powered data converter circuits
that would normally require the entire circuit to be disabled when not in use can remain powered up
between conversions as shown in Figure 1. Data
acquisition circuits providing 12 to 24 bits of accuracy
can operate with the reference device continuously
biased with no power penalty, providing the highest
accuracy and lowest possible long term drift.
Other reference devices consuming higher supply currents will need to be disabled in between conversions
to conserve battery capacity. Absolute accuracy will
10
suffer as the device is biased and requires time to settle to its final value, or, may not actually settle to a final
value as power-on time may be short.
Figure 1.
VIN = 4.5 - 9V
10µF
0.01µF
VIN
VOUT
X60008-41
GND
0.001µF
REF IN
Serial
Bus
Enable
SCK
SDAT
12 to 24-bit
A/D Converter
Board mounting Considerations
For applications requiring the highest accuracy, board
mounting location should be reviewed. Placing the
device in areas subject to slight twisting can cause
degradation of the accuracy of the reference voltage
due to die stresses. It is normally best to place the
device near the edge of a board, or the shortest side,
as the axis of bending is most limited at that location.
Obviously mounting the device on flexprint or
extremely thin PC material will likewise cause loss of
reference accuracy.
Noise Performance and Reduction:
The output noise voltage in a 0.1Hz to 10Hz
bandwidth is typically 30µVp-p. This is shown in the
plot in the Typical Performance Curves. The noise
measurement is made with a bandpass filter made of
a 1 pole high-pass filter with a corner frequency at
.1Hz and a 2-pole low-pass filter with a corner
frequency at 12.6Hz to create a filter with a 9.9Hz
bandwidth. Noise in the 10KHz to 1MHz bandwidth is
approximately 400µVp-p with no capacitance on the
output, as shown in Fig. 2 below. These noise
measurements are made with a 2 decade bandpass
filter made of a 1 pole high-pass filter with a corner
frequency at 1/10 of the center frequency and 1-pole
low-pass filter with a corner frequency at 10 times the
center frequency. Figure 2 also shows the noise in the
10KHz to 1MHz band can be reduced to about 50µVpp using a .001µF capacitor on the output. Noise in the
1KHz to 100KHz band can be further reduced using a
0.1µF capacitor on the output, but noise in the 1Hz to
100Hz band increases due to instability of the very low
power amplifier with a 0.1µF capacitance load. For
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
load capacitances above .001µF the noise reduction
network shown in Fig. 3 is recommended. This
network reduces noise sig-nificantly over the full
bandwidth. As shown in Fig. 2, noise is reduced to less
than 40µVp-p from 1Hz to 1MHz using this network
with a .01µF capacitor and a 2kΩ resistor in series with
a 10µF capacitor.
Figure 2.
X60008-41 NOISE REDUCTION
Turn-On Time
The X60008 devices have ultra-low supply current and
thus the time to bias up internal circuitry to final values
will be longer than with higher power references. Normal turn-on time is typically 7ms. This is shown in the
graph, Figure 4. Since devices can vary in supply current down to 300nA, turn-on time can last up to about
12ms. Care should be taken in system design to
include this delay before measurements or conversions are started.
400
CL = .001µF
X60008 TURN-ON TIME (25°C)
(3 Representative Units)
CL = .1µF
300
CL = .01µF & 10µF + 2kΩ
6
250
VIN
5
200
VIN & VOUT (V)
NOISE VOLTAGE (µVp-p)
Figure 4.
CL = 0
350
150
100
50
4
IIN = 700nA
IIN = 520nA
3
IIN = 360nA
2
0
1
10
100
1000
10000
100000
0
-1
Figure 3.
1
3
5
7
9
11
TIME (mSec)
VIN = 5.0V
10µF
.1µF
1
VIN
Temperature Coefficient
VO
X60008-41
GND
2kΩ
.01µF
10µF
11
The limits stated for temperature coefficient (tempco)
are governed by the method of measurement. The
overwhelming standard for specifying the temperature
drift of a reference is to measure the reference voltage
at two temperatures, take the total variation, (VHIGH VLOW), and divide by the temperature extremes of
measurement (THIGH - TLOW). The result is divided by
the nominal reference voltage (at T = 25°C) and multiplied by 106 to yield ppm/°C. This is the “Box” method
for determining temperature coefficient.
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL APPLICATION CIRCUITS
Precision 4.096V, 50mA Reference.
VIN = 4.5V to 9V
R = 200Ω
2N2905
VIN
X60008-41
VOUT
4.096V/50mA
0.001µF
GND
±4.096V Dual Output, High Accuracy Reference
4.5V to 9V
0.1µF
VIN
X60008-41
VOUT
4.096V
0.001µF
GND
VIN
X60008-41
VOUT
R1 =
4.096V - VIN |
; IOUT ≥ 10mA
-IOUT
0.001µF
GND
VIN = -4.5V to -9V
-4.096V
R1
Kelvin Sensed Load
4.5V to 9V
0.1µF
VIN
VOUT
X60008-41
GND
12
+
VOUT Sense
–
Load
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
TYPICAL APPLICATION CIRCUITS
Negative Voltage Reference
X60008-41
VIN
VOUT
GND
CIN 0.001
COUT = 0.001µF
-4.096V
R1 = 1250Ω
R1 Limits max load current
with R1 = 1250Ω, ILOAD MAX = 4mA
VIN = -9V
R1 =
4.096V - VIN |
-(IOUT)
4.096V Full Scale Low-Drift 10-bit Adjustable Voltage Source
4.5V to 9V
0.1µF
VIN
VOUT
X60008-41
GND
0.001µF
VCC RH
X9119
2-Wire Bus
13
+
SDA
SCL
VSS
VOUT
–
VOUT
(buffered)
RL
FN8142.0
March 14, 2005
X60008B-41, X60008C-41, X60008D-41
PACKAGING INFORMATION
8-Lead Plastic, SOIC, Package Code S8
0.150 (3.80)
0.158 (4.00)
0.228 (5.80)
0.244 (6.20)
Pin 1 Index
Pin 1
0.014 (0.35)
0.019 (0.49)
0.188 (4.78)
0.197 (5.00)
(4X) 7°
0.053 (1.35)
0.069 (1.75)
0.004 (0.19)
0.010 (0.25)
0.050 (1.27)
0.010 (0.25)
X 45°
0.020 (0.50)
0.050" Typical
0.050"
Typical
0° - 8°
0.0075 (0.19)
0.010 (0.25)
0.250"
0.016 (0.410)
0.037 (0.937)
FOOTPRINT
0.030"
Typical
8 Places
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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14
FN8142.0
March 14, 2005