T PL IA N M CO *R oH S Features Applications ■ Protects four lines ■ PoE power protection ■ Unidirectional ■ DC power supply protection ■ 24 A peak surge current ■ RoHS compliant* CDNBS08-T58CC - Common Cathode TVS Diode General Information The Model CDNBS08-T58CC is designed to protect the power section in Power over Ethernet (PoE) applications. The device is packaged in an eight lead narrow body SOIC package. Bourns® Chip Diodes are available in surface mount packages and are easy to handle using standard pick and place equipment. 8 7 6 5 1 2 3 4 In addition to surge protection, the device provides Level 4 ESD protection per IEC 61000-4-2. Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Value Unit Peak Pulse Current (8/20 µs) IPP 24 A Peak Pulse Power (8/20 µs) PPP 2700 W Working Peak Reverse Voltage VWM 58 V kV IEC 61000-4-2 Contact Discharge ESD 30 Junction Temperature TJ -55 to +150 °C Storage Temperature TSTG -65 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Test Condition Breakdown Voltage @ 1 mA VBR IBR = 1 mA VBR Temperature Coefficient VBR IBR = 1 mA Leakage Current IR VR = VWM Capacitance C VR = -44 V, f = 1 MHz, 30 mV rms Clamping Voltage VC IPP = 24 A (8/20 µs) Forward Voltage VF IF = 1 A, TW = 100 µs Min. Typ. Max. Unit 64.4 68 71.2 V 0.1 TA = 25 °C TA = 85 °C %/°C 200 nA 1 µA 55 pF 100 1 V V Device Pinout Pin Function 1 ANODE 1 2 GND 3 GND 4 ANODE 2 5 ANODE 3 6 GND 7 GND 8 ANODE 4 Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CDNBS08-T58CC - Common Cathode TVS Diode Typical Leakage vs. Junction Temperature Typical Capacitance vs. Reverse Voltage 1000 100 Capacitance (pF) IR (nA) 100 10 1 f = 1 MHz VOSC = 30 mV rms 0.1 VR = 58 V 10 0.01 0 50 75 100 125 44 150 46 48 50 54 56 58 3.0 3.5 VR (V) Junction Temperature (°C) Typical Clamping Voltage vs. Current Typical Forward Voltage vs. Forward Current 100 IF Forward Current (A) 100 10 Current (A) 52 1 8/20 µs Waveform 0.1 10 1 8/20 µs Waveform 0.1 60 70 80 VC Clamping Voltage (V) 90 0 0.5 1.0 1.5 2.0 2.5 VF Forward Voltage (V) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CDNBS08-T58CC - Common Cathode TVS Diode Product Dimensions Recommended Footprint This is an RoHS compliant molded JEDEC narrow body SO-8 package with 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a flammability rating of UL 94V-0. A B A D B C C E DIMENSIONS = MILLIMETERS (INCHES) D Dimensions J 7 ° NOM. 3 PLCS. 45 ° E NOM. G 4° ±4° F 1.27 (0.050) B 0.51 (0.020) C 6.80 (0.268) D 4.20 (0.165) E 1.30 (0.051) H I K 7 ° NOM. 4 PLCS. L A Dimensions A 4.80 - 5.00 (0.189 - 0.197) B 3.81 - 4.00 (0.150 - 0.157) C 5.80 - 6.20 (0.228 ± 0.244) D 0.36 - 0.51 (0.014 - 0.020) E 1.35 - 1.75 (0.053 - 0.069) F 0.102 - 0.203 (0.004 - 0.008) G 0.25 - 0.50 (0.010 - 0.020) H 0.51 - 1.12 (0.020 - 0.044) I 0.190 - 0.229 (0.0075 - 0.0090) J 4.60 - 5.21 (0.181 - 0.205) K 0.28 - 0.79 (0.011 - 0.031) L 1.27 (0.050) Typical Part Marking CDNBS08-T58CC ............................................................... 4T58CC How to Order CD NBS08 - T 58 CC Common Code Chip Diode Package NBS08 = Narrow Body SOIC8 Package Model T = Transient Voltage Suppressor Working Peak Reverse Voltage 58 = 58 VDC Suffix CC = Common Cathode Configuration Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm SMD Trimming Potentiometer CDNBS08-T58CC - Common Cathode TVS Diode Packaging Information The product is packaged in tape and reel format per EIA-481 standard. P 0 P 1 d PART ORIENTATION T E Index Hole 120 ° F D2 W B PIN 1 D1 D P A Trailer End ....... ....... C Device ....... ....... ....... ....... Leader ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) MM (INCHES) Direction of Feed Item Symbol NSOIC 8L Carrier Width A 6.7 ± 0.10 (0.264 ± 0.004) Carrier Length B 5.5 ± 0.10 (0.217 ± 0.004) Carrier Depth C 2.10 ± 0.10 (0.083 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 330 (12.992) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W1 Quantity per Reel -- 80.0 MIN. (3.1500) 18.4 MAX. (0.724) 2500 06/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.