INTERSIL HCTS190MS

HCTS190MS
Radiation Hardened
Synchronous 4-Bit Up/Down Counter
September 1995
Features
Description
• 3 Micron Radiation Hardened CMOS SOS
The Intersil HCTS190MS is an asynchronously presettable
BCD Decade synchronous counter. Presetting the counter to
the number on the preset data inputs (P0 - P3) is accomplished by a low on the parallel load input (PL). Counting
occurs when (PL) is high, Count Enable (CE) is low and the
Up/Down (U/D) input is either low for up-counting or high for
down-counting. The counter is incremented or decremented
synchronously with the low-to-high transition of the clock.
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting,
goes high and remains high for one clock cycle. This output
can be used for look-ahead carry in high speed cascading.
The TC output also initiates the Ripple Clock output (RC)
which, normally high, goes low and remains low for the lowlevel portion of the clock pulse. These counter can be cascaded using the Ripple Carry output.
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
If the decade counter is preset to an illegal state or assumes
an illegal state when power is applied, it will return to the
normal sequence in one or two counts
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
The HCTS190MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
• Input Current Levels Ii ≤ 5µA @ VOL, VOH
The HCTS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
TEMPERATURE RANGE
HCTS190DMSR
-55oC
HCTS190KMSR
-55oC
SCREENING LEVEL
PACKAGE
to
+125oC
Intersil Class S Equivalent
16 Lead SBDIP
to
+125oC
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCTS190D/Sample
+25oC
Sample
16 Lead SBDIP
HCTS190K/Sample
+25oC
Sample
16 Lead Ceramic Flatpack
HCTS190HMSR
+25oC
Die
Die
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
P1
1
16 VCC
P1
1
16
VCC
Q1
2
15 P0
Q1
2
15
P0
Q0
3
14
CP
Q0
3
14 CP
CE
4
13 RC
CE
4
13
RC
U/D
5
12 TC
U/D
5
12
TC
Q2
6
11 PL
Q2
6
11
PL
Q3
7
10 P2
Q3
7
10
P2
GND
8
9 P3
GND
8
9
P3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number
File Number
518614
2474.2
HCTS190MS
Functional Diagram
15
P0
1
P1
10
P2
9
P3
PL
11
U/D
5
PL
PL
PL
PL
P
P
P
P
Q
T
CP
Q
T
Q
Q
CP
FF0
Q
T
CP
FF1
Q
CP
FF2
Q3
Q
T
7
Q
FF3
TC
12
13
CE
4
RC
CP
14
3
Q0
2
Q1
6
Q2
TRUTH TABLE
FUNCTION
P;
CE
U/D
CP
Count Up
H
L
L
Count Down
H
L
H
Asynchronous Preset
L
X
X
X
No Change
H
H
X
X
H = High Level
L = Low Level
X = Immaterial
= Transition from low to high
NOTE: U/D or CE should be changed only when clock is high.
Spec Number
2
518614
Specifications HCTS190MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA
θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73oC/W
24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W
29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage(VCC) . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times @ 4.5 VCC (TR, TF) . . . . . . . .500ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Noise Immunity
Functional Test
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
40
µA
2, 3
+125oC, -55oC
-
750
µA
1
+25oC
4.8
-
mA
2, 3
+125oC, -55oC
4.0
-
mA
1
+25oC
-4.8
-
mA
2, 3
+125oC, -55oC
-4.0
-
mA
VCC = 4.5V, VIH =2.25V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or
GND
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
-
(NOTE 1)
CONDITIONS
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
LIMITS
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number
3
518614
Specifications HCTS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
PL to Qn
SYMBOL
TPLH
TPHL
Pn to Qn
TPLH
TPHL
CP to Qn
TPLH
TPHL
CP to RC
TPLH
TPHL
CP to TC
TPLH
TPHL
U/D to RC
TPLH
TPHL
U/D to TC
TPLH
TPHL
CE to RC
(NOTES 1, 2)
CONDITIONS
TPLH
TPHL
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
2
32
ns
10, 11
+125oC, -55oC
2
37
ns
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
LIMITS
o
9
+25 C
2
38
ns
10, 11
+125oC, -55oC
2
44
ns
o
9
+25 C
2
24
ns
10, 11
+125oC, -55oC
2
28
ns
o
9
+25 C
2
36
ns
10, 11
+125oC, -55oC
2
41
ns
o
9
+25 C
2
24
ns
10, 11
+125oC, -55oC
2
29
ns
9
+25oC
2
23
ns
10, 11
+125oC, -55oC
2
27
ns
9
+25oC
2
17
ns
10, 11
+125oC, -55oC
2
19
ns
9
+25oC
2
26
ns
10, 11
+125oC, -55oC
2
29
ns
9
+25oC
2
33
ns
10, 11
+125oC, -55oC
2
39
ns
9
+25oC
2
33
ns
10, 11
+125oC, -55oC
2
39
ns
9
+25oC
2
32
ns
10, 11
+125oC, -55oC
2
36
ns
9
+25oC
2
34
ns
10, 11
+125oC, -55oC
2
38
ns
9
+25oC
2
29
ns
10, 11
+125oC, -55oC
2
33
ns
9
+25oC
2
35
ns
10, 11
+125oC, -55oC
2
38
ns
9
+25oC
2
20
ns
10, 11
+125oC, -55oC
2
21
ns
9
+25oC
2
29
ns
10, 11
+125oC, -55oC
2
31
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
Spec Number
4
518614
Specifications HCTS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
Capacitance Power Dissipation
CPD
(NOTE 1)
CONDITIONS
VCC = 5.0V, f = 1MHz
LIMITS
TEMPERATURE
MIN
MAX
UNITS
+25oC
-
60
pF
CIN
VCC = 5.0V, f = 1MHz
-
128
pF
C
-
10
pF
oC,
-55oC
-
10
pF
-
15
ns
-
+125
Output Transition Time
Maximum Operating Frequency
(CPU, CPD)
Setup Time
Pn to PL
TTHL
TTLH
VCC = 4.5V
FMAX
VCC = 4.5V
TSU
+25oC
+125oC,
VCC = 4.5V
TSU
22
ns
30
MHz
+125oC, -55oC
20
MHz
12
-
ns
18
-
ns
12
-
ns
18
-
ns
18
-
ns
27
-
ns
2
-
ns
+25
oC
TSU
VCC = 4.5V
TH
Hold Time
CE to CP
TH
VCC = 4.5V
+25 C
TH
oC,
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
oC,
TREC
VCC = 4.5V
2
-
ns
2
-
ns
+125oC, -55oC
2
-
ns
+25oC
0
-
ns
0
-
ns
12
-
ns
18
-
ns
16
-
ns
24
-
ns
+25
TW
TW
-55oC
o
VCC = 4.5V
+25 C
+125
PLN Pulse Width
-55oC
oC
+125oC,
CP Pulse Width
-55oC
+25oC
+125oC,
Recovery Time
-55oC
+25oC
+125
Hold Time
U/D to CP
-55oC
o
+125
Hold Time
Pn to PL
-55oC
+25oC
+125oC,
Setup Time
U/D to CP
-55oC
+25oC
+125oC,
Setup Time
CE to CP
-55oC
+25o
+125
Input Capacitance
oC,
oC,
-55oC
+25oC
VCC = 4.5V
+125
oC,
-55oC
20
ns
30
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC
-4.0
-
mA
Spec Number
5
518614
Specifications HCTS190MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
(NOTES 1, 2)
CONDITIONS
SYMBOL
TEMPERATURE
MIN
MAX
UNITS
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
+25oC
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V , IOH = -50µA
+25oC
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25oC
-
±5
µA
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25oC
-
-
-
TPLH
VCC = 4.5V
+25oC
2
37
ns
TPHL
VCC = 4.5V
+25oC
2
44
ns
TPLH
VCC = 4.5V
+25oC
2
24
ns
TPHL
VCC = 4.5V
+25oC
2
41
ns
TPLH
VCC = 4.5V
+25oC
2
29
ns
TPHL
VCC = 4.5V
+25oC
2
27
ns
TPLH
VCC = 4.5V
+25oC
2
19
ns
TPHL
VCC = 4.5V
+25oC
2
29
ns
TPLH
VCC = 4.5V
+25oC
2
39
ns
TPHL
VCC = 4.5V
+25oC
2
39
ns
TPLH
VCC = 4.5V
+25oC
2
36
ns
TPHL
VCC = 4.5V
+25oC
2
38
ns
TPLH
VCC = 4.5V
+25oC
2
33
ns
TPHL
VCC = 4.5V
+25oC
2
38
ns
TPLH
VCC = 4.5V
+25oC
2
21
ns
TPHL
VCC = 4.5V
+25oC
2
31
ns
PL to Qn
Pn to Qn
CP to Qn
Cp to RC
CP to TC
U/D to RC
U/D to TC
CE to RC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
PARAMETER
Spec Number
6
518614
Specifications HCTS190MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 7, 9
Group A (Note 1)
Group B
Group D
READ AND RECORD
ICC, IOL/H
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
NOTES:
1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
TEST
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
1/2 VCC = 3V ± 0.5V
GROUND
VCC = 6V ± 0.5V
50kHz
25kHz
-
16
-
-
-
1, 4, 5, 9 - 11, 14 - 16
-
-
2, 3, 6, 7, 12, 13
11, 16
14
-
STATIC BURN-IN I TEST CONNECTIONS (Note 1
2, 3, 6, 7, 12, 13
1, 4, 5, 8 - 11, 14, 15
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
2, 3, 6, 7, 12, 13
8
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
1, 4, 5, 8 - 10, 15
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
2, 3, 6, 7, 12, 13
8
1, 4, 5, 9 - 11, 14 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
7
518614
HCTS190MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
100% Interim Electrical Test 2 (T2)
Sample - Wire Bond Pull Monitor, Method 2011
100% Delta Calculation (T0-T2)
Sample - Die Shear Monitor, Method 2019 or 2027
100% PDA 1, Method 5004 (Notes 1and 2)
100% Internal Visual Inspection, Method 2010, Condition A
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Delta Calculation (T0-T1)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Interim Electrical Test 3 (T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% PIND, Method 2020, Condition A
100% Final Electrical Test
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Serialization
100% Radiographic, Method 2012 (Note 3)
100% Initial Electrical Test (T0)
100% External Visual, Method 2009
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number
8
518614
HCTS190MS
AC Timing Diagrams
AC Load Circuit
DUT
TEST
POINT
VIH
INPUT
VS
CL
VIL
RL
TPLH
TPHL
VOH
CL = 50pF
VS
OUTPUT
RL = 500Ω
VOL
VOH
TTLH
TTHL
80%
VOL
20%
80%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
HCTS
UNITS
VCC
4.50
V
VIH
3.00
V
VS
1.30
V
VIL
0
V
GND
0
V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
9
518614
HCTS190MS
Die Characteristics
DIE DIMENSIONS:
104 x 86 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
(16) VCC
(1) P1
(2) Q1
HCTS190MS
(15) P0
Q0 (3)
(14) CP
CE (4)
(13) RC
U/D (5)
(12) TC
Q2 (6)
(11) PL
P2 (10)
P3 (9)
GND (8)
Q3 (7)
NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS190 is TA14444A.
Spec Number
10
518614