Singl e - Ch ip Si G e T r ans c ei ve r Chips et fo r E -ba nd Bac k h aul Applic atio ns fr o m 8 1 to 86 G Hz Applic atio n N ote A N 378 Revision: Rev. 1.0 2014-06-10 RF and P r otecti on D evic es Edition 2014-06-10 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Application Note Revision History: 2014-06-10 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. 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Last Trademarks Update 2009-10-19 Application Note AN378, Rev. 1.0 3 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 7 2 About E-Band Backhaul Application................................................................................................ 8 3 3.1 3.2 Infineon E-Band BGT80 RF Front-End Transceiver Chipset ......................................................... 9 Key Features ........................................................................................................................................ 9 Description of BGT80 ......................................................................................................................... 10 4 Typical Measurement Results ......................................................................................................... 11 5 5.1 5.2 Package ............................................................................................................................................. 13 BGT80 in PG-WFWLB-119-1 Package ............................................................................................. 13 Pin Definition and Function ................................................................................................................ 14 6 6.1 About BGT80 Evaluation Board ...................................................................................................... 16 Application Diagram and Schematic of the Evaluation Board ........................................................... 16 7 7.1 7.2 7.3 Performance of BGT80 Transmitter ............................................................................................... 18 rd Measurement Results of 3 -Order Intermodulation Products ........................................................... 21 Measurement Results of VGA and Buffer Amplifier ........................................................................... 22 PPD Power Amplifier – MUX out........................................................................................................ 23 8 8.1 Performance of BGT80 Receiver .................................................................................................... 24 Intercept Point Measurement of Receiver .......................................................................................... 26 9 VCO Signal Generation .................................................................................................................... 27 10 10.1.1 10.1.2 Getting Started with Evaluation Board .......................................................................................... 29 Configuring as Transmitter ................................................................................................................. 29 Configuring as Receiver ..................................................................................................................... 31 11 Authors .............................................................................................................................................. 32 Application Note AN378, Rev. 1.0 4 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz List of Content, Figures and Tables List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Top View (left), Bottom View (right) and Side View of BGT80 in eWLB Package ............................. 13 Dimension of eWLB Package PG-WFWLB-119-1 for BGT80 (left: top view; center: side view; right: bottom view) ....................................................................................................................................... 14 Pin Number Assignment of BGT80 package eWLB PG-WFWLB-119-1 (Top View) ........................ 14 Evaluation Board for BGT80 – Top View ........................................................................................... 16 Evaluation Board for BGT80 – Bottom View ...................................................................................... 17 Output Spectrum of BGT80 at TX Waveguide Port on the evaluation board @ f TX=83.2 GHz (DAC VGA=27)............................................................................................................................................. 18 Measurement Setup used to measure TX Output Spectrum of BGT80 @ fTX=83.2 GHz ................. 19 Linear (PIF/TX=-27 dBm) and Saturated Power variation over Frequency of BGT80 (DAC VGA=63) 19 Linear Gain (PIF/TX=-27 dBm) over Frequency @ DAC VGA=63 ....................................................... 20 Output P1dB over Frequency @ DAC VGA=63 ................................................................................ 20 OIP3 versus Frequency at PIF/TX=-27 dBm ........................................................................................ 21 DAC VGA Setting versus Output Power at different IF Input Power levels (f TX=82.78 GHz) ............ 22 PPD PA Output Voltage versus Output Power @ f TX=82.78 GHz ..................................................... 23 Receiver Gain over Frequency for BGT80 ......................................................................................... 24 Input P1dB of Receiver @ fRX=83.2 GHz ........................................................................................... 24 P1dB over Frequency of BGT80 Receiver ......................................................................................... 25 Noise Figure variation over Frequency for BGT80 ............................................................................ 25 Input IP2 of Receiver over Frequency at PRX-RF=-28 dBm ................................................................. 26 Input IP3 of Receiver over Frequency at PRX-RF=-31 dBm ................................................................. 26 VCO Frequency over Tuning Voltage ................................................................................................ 27 Tuning Sensitivity (Kvco) versus Tuning Voltage ............................................................................... 28 Phase Noise over Frequency for BGT80 ........................................................................................... 28 E-Band V-Band SPI-Programmer Main Window and PLL Window ................................................... 29 Typical Transmitter Settings for the BGT80 ....................................................................................... 30 Typical Receiver Settings for the BGT80 ........................................................................................... 31 Application Note AN378, Rev. 1.0 5 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz List of Content, Figures and Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Measurement Results - DC Parameters ............................................................................................ 11 IF Port Features and Sensor Characteristics ..................................................................................... 11 Measurement Results - Transmitter ................................................................................................... 12 Measurement Results – LO Generation............................................................................................. 12 Measurement Results - Receiver ....................................................................................................... 12 Pin Definition and Function ................................................................................................................ 15 Interface Description of BGT80 Application Board ............................................................................ 17 Application Note AN378, Rev. 1.0 6 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Introduction 1 Introduction The smartphone revolution has led to a growing demand in mobile data traffic which subsequently has resulted in increased throughput per user. The high mobile data requirements has led to the deployment of advanced 4G services like Long Term Evolution (LTE) by the mobile network operators and this is expected to grow further in the coming years. LTE and LTE Advanced will provide users with higher data rates which will increase data traffic drastically. The increasing data rate puts an enormous burden on the network operator’s backhaul networks. The bulk of today’s basestation infrastructure is not ready to support the required high data throughput using the existing microwave backhaul techniques. The connection between the basestations is usually planned for lower data rates up to 100 MBit/s which has to be increased significantly to meet the demands for LTE systems. Though optical fiber based backhaul networks can handle a huge data throughput, they are faced with the challenge of easy and cost-effective deployment. The concept of small cells make the deployment of fiber optic based solution even complex and expensive and sometimes even not feasible. This is where the wireless backhaul technology comes into place. A new solution using millimeter wave backhaul opens upto 10 GHz bandwidth in the E-band (71-76 and 81-86 GHz) and 7 GHz bandwidth in the V-band (57– 64 GHz). The high bandwidth and channel spacing offered at these frequencies enables data rates higher than 1 Gbps for video and data service even with simple modulation schemes. Infineon has developed a complete family of packaged RF Transceivers for mobile backhaul applications – supporting both the V-band and E-band frequencies with its BGT60, BGT70 and BGT80 ICs. The modular approach followed by Infineon provides same package dimensions and RF footprint for all the three chipsets which enable customers to quickly setup a radio system at any of the above allowed frequency bands. The highly integrated ICs help to eliminate discrete components, thereby simplifying the customer’s system design and time-to-market. This also helps to reduce the total cost of the mmWave backhaul solutions. The ICs are designed in Infineon´s advanced SiGe:C (Silicon Germanium) technology with device transit frequency of 200 GHz, that enable integration of several mmWave building blocks such as Power Amplifier (PA), Low Noise Amplifier (LNA), Up- and Down-Convertor, Programmable Gain Amplifier (PGA), Voltage Controlled Oscillator (VCO) and more with high performance into a single chip. This technology is proven and fully qualified for other Infineon millimeter- and microwave chipsets already. Furthermore, Infineon is the leading company to house these single chipsets into a plastic Embedded Wafer Level Ball Grid Array (eWLB) package which can be processed in standard SMT flow. In this application note, the performance of Infineon’s fully integrated E-Band Transceiver BGT80 for 81 to 86 GHz on its evaluation board is described in detail. All the measurements presented in this application note are done port-to-port on Infineon’s EVB i.e. Board losses (~2dB) are not dembedded. The measurements are done at backside chip temperature of 45°C. This leads to an additional loss of 1dB. For the specifications of BGT80 transceiver IC, please refer the datasheet of BGT80. Application Note AN378, Rev. 1.0 7 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz About E-Band Backhaul Application 2 About E-Band Backhaul Application Solutions using millimeter wave backhaul in the E-band of 71-76 and 81-86 GHz open up 10 GHz bandwidth for a full-duplex wireless radio link. It allows gigabit data rates with the simplest modulation scheme which minimize linearity requirements of the transmitter power amplifier (PA). With more spectrally efficient modulations, data rates even higher than 10 Gbps can be achieved. Antennas at high frequencies become compact and can provide higher gain than their contemporaries at lower microwave frequencies which can improve the link condition. The technical specifications for the E-band communication was specified by ETSI within the document ETSI TS 102 524 “Fixed Radio Systems; Point-to-Point equipment; Radio equipment and antennas for use in Point-to-Point Millimeter wave applications in the Fixed Services (mmwFS) frequency bands 71 GHz to 76 GHz and 81 GHz to 86 GHz” in 2006. The approach for E-band backhaul is to allow site-by-site coordination through the so-called “pencil beam” concept of operation, in which strict requirements are placed on the antenna radiation pattern requiring at least 43 dBi antenna gain with a half-power beamwidth of about only 2 degree. To ensure a high data rate communication, 19 channels of bandwidth 250 MHz each and 125 MHz spacing at the band edge are defined within each of the 5 GHz bandwidth. Aggregation of any of the 19 channels is allowed. Minimum radio interface capacity (RIC) of 150 Mbps with the simplest two-state binary modulation and up to 19 Gbps with high level modulation scheme like 128-QAM is specified. Maximum equivalent isotropically radiated power (EIRP) is specified to 45 dBW which is equivalent to about +30 dBm output power at the antenna port. A large channel bandwidth with a higher modulation scheme demands higher carrier-to-noise ratio (CNR), which imposes stringent requirements on the high frequency transmitter and receiver design. For example, a typical receiver with 12 dB noise figure at the antenna port in an E-band radio system using 500 MHz channel bandwidth and 16-QAM modulation would need about the same minimum receiver signal power level as a system using 1250 MHz BW and FSK to ensure the bit error rate (BER) of 1E-6. This also limits the maximum distance of an E-band radio link to 2 to 3 km. The radio link can be either in full-duplex (FDD) or half-duplex (TDD) system configuration. In FDD E-Band systems, one of the two frequencies sub-bands 71 – 76 GHz or 81 - 86 GHz is used for transmission and the other for reception. In a TDD system, the same frequency band is used for transmit or receive mode. Application Note AN378, Rev. 1.0 8 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Infineon E-Band BGT80 RF Front-End Transceiver Chipset 3 Infineon E-Band BGT80 RF Front-End Transceiver Chipset 3.1 Key Features BGT80 covers the E-Band frequency range from 81 to 86 GHz Fabricated with Infineons advanced Silicon-Germanium (SiGe) technology Housed in Infineon’s Embedded Wafer Level Ball-Grid Array (eWLB) Package BGT80 can be programmed via SPI interface to work either in transmit (TX) or/and receive (RX) mode Zero IF – differential I/Q interface – direct conversion architecture Differential RF transmit output signaling Differential RF receive input signaling Differential intermediate frequency I/Q signaling Peak detector at VGA input at transmit path Peak detector at PA output at transmit path Built-in temperature sensor SPI interface ESD protected device BITE (Built-In-Test Equipment) for self-test and calibration in production at Infineon to verify RF performance Can support TDD or FDD systems Applications: - E-Band from 81 to 86 GHz FDD or TDD systems for telecommunication applications Product Name BGT80 Application Note AN378, Rev. 1.0 Package PG-WFWLB-119-1 9 / 33 Marking BGT80TR11 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Infineon E-Band BGT80 RF Front-End Transceiver Chipset 3.2 Description of BGT80 Currently, different mmWave system implementations based on III/V-compound semiconductor, silicon bipolar or silicon CMOS technologies have been reported. The advancements in SiGe based technologies in the last years have resulted in their increased use for applications in the mmWave regime with their successful deployment in several existing commercial mmWave applications. Infineon has a long history of research & development with SiGe based technologies and the BGT80 transceiver IC is designed with one of Infineons inhouse advanced SiGe bipolar process. The single-chip transceiver chipset BGT80 is manufactured with Infineon’s 200 GHz-fT SiGe-technology and applicable for telecommunication applications in the microwave and mmWave range. Infineon’s 200 GHz Silicon Germanium (SiGe) technology is proven and qualified for Millimeter (e.g. 77 GHz automotive radar) and Microwave chipsets (e.g. 24 GHz automotive/industrial radar). BGT80 uses fully-differential direct conversion architecture for the transmitter and receiver. A Fully-differential (balanced) architecture helps to mitigate the effects of common-mode interference and RF grounding issues, which become extremely critical at higher operating frequencies. Also a differential architecture offers the advantage of reduced even-order harmonics. The direct conversion architecture simplifies the frequency up/down-conversion process and can reduce bulky and expensive off-chip filtering components. Through the direct conversion architecture of the transceiver, the interface between RF and baseband is simplified significantly compared to currently available discrete millimeter wave solutions. Furthermore, the offering of the single chip solution in a eWLB plastic package makes a major difference to the market. With the packaged chipset, customers can save cost and reduce the time-to-market significantly. The outstanding RF performance of SiGe technology – such as deliverable saturated output power of up to 11 dBm, a low receiver noise figure of 9.5 dB and excellent VCO phase noise performance better than -83 dBc/Hz at 100kHz offset – allow designers to implement systems with high modulation schemes up to QAM64 with a sample rate of more than 1 Giga Samples per second (GS/s) or simple systems with QPSK with large bandwidth through channel aggregation. ESD (Electrostatic Discharge) performance of more than 1 kV increases robustness. The low power consumption of less than 2 W for this backhaul transceiver family also allows network operators to reduce related fixed expenses. In general, Infineon’s single-chip E-Band transceiver offers customers the following advantages: - lower production cost - broadband high data rate telecommunication which enable Gbps radio link - compact single chip integration leading to much smaller form factor - excellent device performance - individual VCO centering taking into account process and temperature variation - robust design & insensitive to interference through direct conversion architecture and fully differential topology - standard plastic package allows industrial assembly and cleaning tool can be used - product family approach with the same foot print i.e. same PCB layout possible for E-Band radios Application Note AN378, Rev. 1.0 10 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Typical Measurement Results 4 Typical Measurement Results In Chapter 4, typical measurement results of the E-Band 81 to 86 GHz transceiver BGT80 are summarized. Please note that these measurements are executed on the Infineon evaluation board at room temperature. Table 1 Measurement Results - DC Parameters Parameter Symbol Unit Value Voltage Supply Vcc V 3.300 Condition Current Consumption - IC powered on, TX off, RX off ICoff 315 - TX on, RX off ICTX mA 550 @ max power - TX off, RX on ICRX 440 - TX on, RX on ICTRX 620 @ max power The current values are of complete EVB. For BGT80 current consumption only please refer Datasheet. Table 2 IF Port Features and Sensor Characteristics Parameter Symbol Unit Output Power Vs PA Peak Detector Readout Relation Pout dBm * PPD_PA selected via MUXout PPD_PA V (MUX out) * This provides the output power level at the landing pad Value Condition Pout t1 ln( PPD _ PA y0 ) A1 y0 0.92899 A1 0.14084 t1 6.04829 Temperature Sensor Sensitivity Tsense mV/K 5 Load Impedance for Tsense Output IF Input Interface at TX Rsensload MΩ 1 Signaling differential IF Load Impedance IFload Ω 100 IF Bandwidth IFBW MHz 500 IF Lower Cutoff Frequency IFlow kHz 3 IF Higher Cutoff Frequency IFhigh MHz 500 I/Q Amplitude Imbalance IQAI dB 0.5 I/Q Phase Imbalance IF Output Interface at RX IQPI deg 8 IF Load Impedance IF Bandwidth IFload IFBW Ω MHz 400 500 IF Lower Cutoff Frequency IFlow kHz 3 IF Higher Cutoff Frequency IFhigh MHz 500 IF Coupling on Board AC Signaling differential external Capacitance > 1µF required value to be specified differential IF Coupling on Board AC I/Q Amplitude Imbalance IQAI dB 1 I/Q Phase Imbalance IQPI deg 7 Application Note AN378, Rev. 1.0 single-ended 11 / 33 Differential, minimum value external Capacitance > 1µF required value to be specified 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Typical Measurement Results Table 3 Measurement Results - Transmitter Parameter Symbol Frequency TX Output Unit Freq GHz Value 81 Output Signaling 83 Condition 86 differential TX-Port Load Impedance TX load Ω TX Chain Gain GTX dB Output Referred P-1dB 100 differential 18.9 20.9 24 From one IF port to Waveguide port OP-1dBTX dBm 3.9 4.9 6.9 differential 100 Ω load Saturated Power Psat dBm 8.3 9.2 10.8 differential 100 Ω load Output Referred IP3 OIP3TX dBm 12.5 13 14.5 differential 100 Ω load PA Control Dynamic Range P_ctrld dB 18.7 LO feed-through Suppression LOs dBc -67 PA Control Step P_ctrls dB 1 6 bits Image Rejection IMR dB 30 w/o feedback loop Table 4 before LO calibration Measurement Results – LO Generation Voltage Control Sensitivity Kvco GHz/V 2.3 1.6 1.1 @TX output @100kHz Offset PNssb100k dBc/Hz -82 @1MHz Offset PNssb1M dBc/Hz -105 -83 -84 SSB -105 -106 SSB @10MHz Offset PNssb10M dBc/Hz -125 -126 -125 SSB Divider Output Power PDIVout dBm VCO Tuning Voltage Vtune V Phase Noise Table 5 differential 100 Ω load -9 0 5.5 single tuning port Measurement Results - Receiver Parameter Symbol Unit Frequency RX Chain Freq GHz Value 81 83 Condition 86 Input Signaling Conversion Gain CGdiff dB 16.3 Double-Side-Band Noise Figure NFdsb dB Input Referred P-1dB IP-1dBRX dBm Input Referred IP3 IIP3RX dBm LO Residual Power at the RX Input LOres dBm RF-Port Load Impedance RFload Ω Application Note AN378, Rev. 1.0 18.2 19.3 10.9 10 10.9 -12 -12 -12 -4.3 -4.1 -5.2 -67.5 100 12 / 33 differential differential in 400Ω load at IF Ports differential 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Package 5 Package 5.1 BGT80 in PG-WFWLB-119-1 Package The BGT80 chipset is in eWLB type package PG-WFWLB-119-1 with bump balls of 300µm diameter and 150µm height as shown in Figure 1. The physical dimension of 6.0 x 6.0 mm² with a bump pitch of 500 µm is shown in Figure 2. The maximum height of the package is 0.8 mm with 0.1 mm planarity variation. The maximum variation of bump coplanarity is 80 µm. On top of the package, Pin 1 is marked by a laser marking. The product name and its production date code are also described there. Package Dimension: 6.0 mm x 6.0 mm x 0.8 mm Figure 1 Top View (left), Bottom View (right) and Side View of BGT80 in eWLB Package For mmWave applications, eWLB offers excellent electrical and thermal characteristics. With a well-engineered design, it offers a comparable loss like a bonding wire package version but has large bandwidth which is required for broadband mmW applications. Furthermore, its outstanding thermal resistance of 15 K/W ensures its proper working even under critical environment. The BGA-like package form enables customers to use industrial standard reflow process to solder it. Application Note AN378, Rev. 1.0 13 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Package Figure 2 Dimension of eWLB Package PG-WFWLB-119-1 for BGT80 (left: top view; center: side view; right: bottom view) 5.2 Pin Definition and Function Figure 3 shows the top view of BGT80 package eWLB PG-WFWLB-119-1 with the pin number assignment. The function of each pin is described in Table 6 below. The ground pins (in black color) are used not only for RF and DC but also as a heat sinker for the BGT80 chipset on the PCB. It has to be noted that the four edge ground pins A1, A12, M1 and M12 are in fact not used in the transceiver IC but it is recommended to connect them to the RF ground for mechanical stability reason. Top View VCC IF_I_TX VCC IFx_I_TX VCC IF_Q_TX VCC VCC IFx_Q_TX IF_Q_RX 11 IFx_Q_RX GND IF_I_RX IFx_I_RX 12 : VCC GND : GND & Thermal Pads VCC 10 : TX IF Ports GND VCC GND GND GND VCC VCC GND GND GND VCC GND GND GND GND GND GND GND GND GND GND GND GND GND 9 : TX RF Ports 8 : RX IF Ports RX Inx GND TX_Outx 7 : RX RF Ports RX In TX_ Out 6 : Sensor Output Ports GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND GND VCC VCC GND GND GND GND GND GND GND GND VCC SP4 VCC GND GND GND GND GND VCC VCC VCC SP4 SP3 SP2 SP1 Vtune VCC MUXout D_MOD Div Divx Temp VCC GND SP3 SP2 SP1 Vtune VCC MUXout D_MOD Div Divx Temp GND A B C D E K L M 5 : VCO/PLL Ports 4 : SPI Ports 3 GND 2 1 Figure 3 F G H J Pin Number Assignment of BGT80 package eWLB PG-WFWLB-119-1 (Top View) Application Note AN378, Rev. 1.0 14 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Package Table 6 Pin Definition and Function Pin No. Name Function A3, A4, A11, B4, B10, C3, Vcc F10, F11, F12, G10, G11, G12, L10, M11 DC supply for the transceiver chip – 3.3V K3, L3, M2, M3 Vcc_Temp Supply voltage for the temperature sensor – 3.3V F1, F2 Vcc_VCO Supply voltage for the VCO – 3.3V E1, E2 Vtune VCO tuning voltage D1, D2 SP1 SPI Enable - chip select C1, C2 SP2 SPI Dataout - SPI data sequence (device control board) B1, B2 SP3 SPI Data - SPI data sequence (control board device) A2, B3 SP4 SPI clock G1, G2 MUXout MUX output (PPD_PA or PPD_MOD DC level output) H1, H2 D_MOD Modulator detector output L1, L2 Temp Temperature sensor output – DC voltage J1, J2 Div Frequency divider output K1, K2 DivX Complementary frequency divider output B7 RX_In RF input of receiver B8 RX_Inx Complementary RF input of receiver B11, B12 IFx_I_RX Complementary inphase IF output of receiver C11, C12 IF_I_RX Inphase IF output of receiver D11, D12 IFx_Q_RX Complementary Quadrature IF output of receiver E11, E12 IF_Q_RX Quadrature IF output of receiver L7 TX_Out RF output of transmitter L8 TX_OuTX Complementary RF output of transmitter L11, L12 IF_I_TX Inphase IF input of transmitter K11, K12 IFx_I_TX Complementary inphase IF input of transmitter J11, J12 IF_Q_TX Quadrature IF input of transmitter H11, H12 IFx_Q_TX Complementary Quadrature IF input of transmitter A5, A6, A9, A10, B5, B6, B9, C4, C5, C6, C9, C10, D3, D4, D5, D6, D9, D10, E3, E4, E5, E6, E9, E10, F3, F8, F9, G3, G9, H3, H4, H5, H6, H9, H10, J3, J4, J5, J6, J9, J10, K4, K5, K6, K9, K10, L4, L5, L6, L9, M4, M5, M6, M9, M10 GND Ground and thermal pads A1, A12, M1, M12 GND A1, A12, M1, M12 are electrically not connected in chip but should be connected to ground for mechanical stability. Note: all pins described in the same line need to be connected on the PCB. Application Note AN378, Rev. 1.0 15 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz BGT80 Evaluation Board 6 BGT80 Evaluation Board 6.1 Overview of the Evaluation Board Figure 4 shows the top view of evaluation board for BGT80. In addition to the BGT80 chip, the PLL circuit with a reference oscillator is also implemented on the evaluation board as showin in Figure 4. Figure 4 Evaluation Board for BGT80 – Top View Application Note AN378, Rev. 1.0 16 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz BGT80 Evaluation Board Figure 5 Table 7 Evaluation Board for BGT80 – Bottom View Interface Description of BGT80 Application Board Pin Function Description SMA Connectors DMOD Wideband PPD MOD output Envelop tracking detector Muxout Provides DC voltage corresponding to PPD PA or PPD MOD Inphase/Complementary I input of transmitter PPD PA or PPD MOD selectable through SPI control Source impedance at input: differential 100 Ω IF_Q_TX/ IF_Qx_TX Quadrature/Complementary Q input of transmitter Source impedance at input: differential 100 Ω IF_I_RX/ IF_Ix_RX Inphase/Complementary I output of receiver Load impedance at output: differential 400 Ω IF_Q_RX/ IF_Qx_RX Quadrature/Complementary Q output of receiver Load impedance at output differential 400 Ω Transmitter/Receiver WR-12 waveguide WR-12 waveguide IF_I_TX/ IF_Ix_TX RF interface TX/RX Port Application Note AN378, Rev. 1.0 17 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter 7 Performance of BGT80 Transmitter The output spectrum at the TX port of BGT80 is shown in Figure 6. The measurement setup is shown in Figure 7. A Direct Digital Synthesizer (DDS) from Analog Devices (AD9959) is used to generate the IF signals for the transmitter. By adjusting the phase of the I and Q output signals from the DDS an image rejection greater than 50 dBc is achieved at the transmitter output. An E-band smart harmonic mixer is used to measure the output signal. The transmitter output power level is kept low by setting the DAC VGA value to 27 in order not to drive the smart harmonic mixer in compression. The carrier feedthorugh suppression is achieved by sweeping the values of DAC_MOD_I and DAC_MOD_Q registers. LO suppression of >50dB is achieved with this particular setup. Figure 8 shows the linear and saturated output power at the transmitter output between 81-86 GHz. The transmitter gain over frequency is plotted in Figure 9. Figure 10 shows the measured output 1-dB compression point over frequency. Figure 11 shows the measured third order intermodulation performance of the transceiver over frequency. The transmitter output power can be varied by changing the DAC VGA and enabling/disabling the VGA buffer. Figure 12 shows the transmitter performance vs different DAC VGA settings. 10 Fundamental 5 0 -5 -10 Power Level [dBm] -15 -20 -25 -30 -35 -40 LO Leakage -45 Image -50 -55 -60 -65 -70 82.75 Figure 6 82.8 82.85 82.9 82.95 83 83.05 Frequency [GHz] 83.1 83.15 83.2 83.25 Output Spectrum of BGT80 at TX Waveguide Port on the evaluation board @ fTX=83.2 GHz (DAC VGA=27) Application Note AN378, Rev. 1.0 18 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter USB 3.3V 0° IF_I_Tx PLL and BGT 80 Control Software Mini USB 180° DDS (Direct Digital Synthesizer) Analog Devices AD9959 IFx_I_Tx BGT80 90° IF_Q_Tx Evaluation Board WR12 Waveguide TX out 270° Smart Harmonic Mixer M1970E Agilent IFx_Q_Tx 5.5V Spectrum Analyzer PXA N9030 Agilent Figure 7 Measurement Setup used to measure TX Output Spectrum of BGT80 @ fTX=83.2 GHz 11.0 9.0 7.0 Pout [dBm] 5.0 3.0 1.0 -1.0 -3.0 -5.0 -7.0 -9.0 80 81 82 83 Frequency [GHz] Linear Power Figure 8 84 85 86 Saturated Power Linear (PIF/TX=-27 dBm) and Saturated Power variation over Frequency of BGT80 (DAC VGA=63) Application Note AN378, Rev. 1.0 19 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter 25 Gain [dB] 23 21 19 17 15 80 Figure 9 81 82 83 Frequency [GHz] 84 85 86 Linear Gain (PIF/TX=-27 dBm) over Frequency @ DAC VGA=63 8 Ouptut P1dB [dBm] 7 6 5 4 3 80 Figure 10 81 82 83 Frequency [GHz] 84 85 86 Output P1dB over Frequency @ DAC VGA=63 Application Note AN378, Rev. 1.0 20 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter Measurement Results of 3rd-Order Intermodulation Products 7.1 15 14.5 OIP3 [dBm] 14 13.5 13 12.5 12 81 Figure 11 82 83 84 Frequency [GHz] 85 86 87 OIP3 versus Frequency at PIF/TX=-27 dBm Application Note AN378, Rev. 1.0 21 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter 7.2 Measurement Results of VGA and Buffer Amplifier 10 5 0 Pout [dBm] -5 -10 -15 -20 -25 -30 -35 -40 -45 0 4 8 12 16 IF=-27dBm Figure 12 20 24 28 32 36 40 DAC VGA Setting IF=-18dBm IF=-10dBm 44 48 52 56 60 IF=0dBm DAC VGA Setting versus Output Power at different IF Input Power levels (f TX=82.78 GHz) Application Note AN378, Rev. 1.0 22 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Transmitter PPD Power Amplifier – MUX out 7.3 1.65 1.60 1.55 1.50 PPD PA [V] 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 -7 Figure 13 -6 -5 -4 -3 -2 -1 0 1 2 3 Pout [dBm] 4 5 6 7 8 9 10 PPD PA Output Voltage versus Output Power @ fTX=82.78 GHz Application Note AN378, Rev. 1.0 23 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Receiver 8 Performance of BGT80 Receiver 20 19.5 19 Gain [dB] 18.5 18 17.5 17 16.5 16 15.5 15 81 Figure 14 82 83 84 85 Frequency [GHz] 86 87 Receiver Gain over Frequency for BGT80 20 19 18 Gain [dB] 17 16 15 14 13 12 11 10 -28 Figure 15 -26 -24 -22 -20 -18 -16 Pin [dBm] -14 -12 -10 -8 Input P1dB of Receiver @ fRX=83.2 GHz Application Note AN378, Rev. 1.0 24 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Receiver -8 -9 IP1dB [dBm] -10 -11 -12 -13 -14 -15 81 Figure 16 82 83 84 Frequency [GHz] 85 86 87 P1dB over Frequency of BGT80 Receiver 12 DSB Noise Figure [dB] 11.5 11 10.5 10 9.5 9 8.5 8 81 Figure 17 82 83 84 Frequency [GHz] 85 86 Noise Figure variation over Frequency for BGT80 Application Note AN378, Rev. 1.0 25 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Performance of BGT80 Receiver 8.1 Intercept Point Measurement of Receiver 40 39 38 IIP2 [dBm] 37 36 35 34 33 32 31 30 81 Figure 18 82 83 84 Frequency [GHz] 85 86 87 Input IP2 of Receiver over Frequency at PRX-RF=-28 dBm -2 -3 IIP3 [dBm] -4 -5 -6 -7 -8 -9 -10 81 Figure 19 82 83 84 85 Frequency [GHz] 86 87 Input IP3 of Receiver over Frequency at PRX-RF=-31 dBm Application Note AN378, Rev. 1.0 26 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz VCO Signal Generation 9 VCO Signal Generation The BGT80 is designed to cover the complete tuning range of 81-86GHz with 0-5.5V of tuning voltage. All the chips are tested during production and VCO is centered with the help of divider output signal. The tuning range is shown in the Figure 20 below. The Kvco is in the range of 3.3GHz/V to 0.8GHz/V being higher on lower tuning voltages and lower on higher tuning voltages. The phase noise shown below is measured directly at TX port of the EVB. 88 87 Frequency [GHz] 86 85 84 83 82 81 80 79 0 Figure 20 0.5 1 1.5 2 2.5 3 3.5 Tuning Voltage [V] 4 4.5 5 5.5 VCO Frequency over Tuning Voltage Application Note AN378, Rev. 1.0 27 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz VCO Signal Generation 3.5 Kvco [GHz/V] 3 2.5 2 1.5 1 0.5 0 Figure 21 0.5 1 1.5 2 2.5 3 3.5 Tuning Voltage [V] 4 4.5 5 5.5 Tuning Sensitivity (Kvco) versus Tuning Voltage -80 -85 Phase Noise [dBc/Hz] -90 -95 -100 -105 -110 -115 -120 -125 -130 80 81 100kHz offset Figure 22 82 83 Frequency [GHz] 84 1MHz offset 10MHz offset 85 86 Phase Noise over Frequency for BGT80 Application Note AN378, Rev. 1.0 28 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Getting Started with Evaluation Board 10 Getting Started with Evaluation Board 10.1.1 Configuring as Transmitter To configure BGT80 as transmitter the following steps should be followed: 1) Apply Vcc=6 V to the BGT60/70/80 board and connect USB cable from PC to the Evaluation Board. The current consumption should be in the range of 315 mA. 2) In the software folder supplied with this transceiver navigate to “E-Band V-Band SPI-Programmer.exe” and double click on it. A window will open as shown in Figure 23 below. Figure 23 E-Band V-Band SPI-Programmer Main Window and PLL Window 3) Click on the “PLL” button in top right corner of this window. Another window will open which looks like as Figure 23. 4) In this PLL window one can select the appropriate chip i.e. BGT60 or BGT70 or BGT80 from the drop down list. Then enter the required frequency in “LO frequency”. 5) In “Ref Frequency” box just enter the oscillation frequency of the reference used for PLL. In our case its 40 MHz reference. But exact frequency is also mentioned in the datalog or written on the backside of the board. Application Note AN378, Rev. 1.0 29 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Getting Started with Evaluation Board 6) In “R Counter” box one can choose between different divider values >1. It should be noted that the PLL IC ADF4158, which is assembled on the Evaluation Board, accepts maximum PFD frequency of 32 MHz. “Prescaler” should be set to 4/5 and “CP Current” can be set to 2.5 mA. “CP Current” value will change the bandwidth of the loop filter used on the board. 7) After setting everything one should click on the “Green Arrow” in top left side of the PLL window. 8) Before you proceed to this step make sure that there is no IF signal applied to the TX IF inputs. Then in the main window press button. This step will automatically execute the LO leakage calibration and set the right value to the DAC_MOD_Q and DAC_MOD_I registers. The current consumption in this case will jump to 550mA. The typical setting for the Transmitter would look like as shown in Figure 24. After LO calibration is done, IF can be applied to TX IF inputs of BGT80. Figure 24 Typical Transmitter Settings for the BGT80 9) Pressing the “Red Arrow” button will update the chip temperature i.e. reading of the integrated temperature sensor and also display DC voltage at Muxout. The DC voltage at Muxout corresponds to the reading of PPD PA or PPD MOD. One of them can be selected at a time from the drop down list under MUX register. 10) Pressing the “Meter” button this button will give you the approximate power output of the device at its landing pad, when IF is applied on the TX input. The measurement is accurate up to -5 dBm of Application Note AN378, Rev. 1.0 30 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Getting Started with Evaluation Board output power. The power at the output of the transmitter can be controlled by changing the value of DAC_VGA register. 10.1.2 Configuring as Receiver To configure BGT80 as receiver the following steps should be followed: 1) Follow step 1 to 7 from the above Section 10.1.1 2) Then in the main window enable the registers as shown in Figure 25. The supply current will jump to 415 mA. Figure 25 Typical Receiver Settings for the BGT80 Application Note AN378, Rev. 1.0 31 / 33 2014-06-10 BGT80 Transceiver for E-Band Backhaul Applications from 81 to 86 GHz Authors 11 Authors Jagjit Singh Bal, Staff Engineer of Application Engineering Abhiram Chakraborty, System Engineer of Application Engineering All the Authors are working in Business Unit “RF and Protection Devices” at Infineon Technologies AG. Application Note AN378, Rev. 1.0 32 / 33 2014-06-10 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN378