Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 25 V Peak collector current ICP 500 mA Collector current IC 300 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 0.3–0 0.65 1.3±0.1 0.65 +0.1 0.15–0.05 Symbol 0 to 0.1 Parameter Parameter 2 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 3 0.2 ■ Absolute Maximum Ratings 1 0.7±0.1 ● Low ON resistance Ron. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.9±0.1 ● +0.1 ■ Features 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 3W (Ta=25˚C) Symbol min Conditions typ max Unit Collector cutoff current ICBO VCB = 50V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 25V, IC = 0 1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 Forward current transfer ratio hFE*1 VCE = 2V, IC = 4mA 500 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Base to emitter voltage VBE VCE = 2V, IC = 4mA Transition frequency fT Collector output capacitance Cob ON resistanse Ron*2 *1h FE V 2500 0.1 V 0.6 V VCB = 6V, IE = –4mA, f = 200MHz 80 MHz VCB = 10V, IE = 0, f = 1MHz 4.5 pF 1.0 Ω *2R on Rank classification Measurement circuit 1kΩ Rank S T hFE 500 ~ 1500 800 ~ 2500 Marking Symbol 3WS 3WT IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 2SD1979 Transistor PC — Ta IC — VCE 120 20 160 120 80 40 8µA 7µA 12 6µA 5µA 8 –25˚C Ta=75˚C 9µA 16 4µA 3µA 2µA 4 80 60 40 20 1µA 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) — IC 3 1 Ta=75˚C 25˚C 1200 0.1 Ta=75˚C 25˚C –25˚C 0.01 0.003 3 10 30 100 Collector current IC (mA) 800 400 f=1MHz IE=0 Ta=25˚C 10 8 6 4 2 0 3 10 30 1 3 10 30 100 300 Collector current IC (mA) Cob — VCB 12 1 –25˚C 0 1 100 Collector to base voltage VCB (V) 0.8 1.0 1.2 120 1600 0.3 0.6 VCE=2V 2000 0.3 0.4 fT — I E 2400 Forward current transfer ratio hFE IC/IB=10 0.001 0.1 0.2 Base to emitter voltage VBE (V) hFE — IC 10 0.03 0 Collector to emitter voltage VCE (V) VCB=6V Ta=25˚C Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 IB=10µA Base current IB (mA) 200 0 Collector output capacitance Cob (pF) VCE=2V Ta=25˚C 0 2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (mW) 240 1000 100 80 60 40 20 0 –1 –3 –10 –30 Emitter current IE (mA) –100