Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 1 0.95 3 +0.1 1.9±0.2 (Ta=25˚C) +0.1 0.16 –0.06 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 18±5 V Collector to emitter voltage VCEO 18±5 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Emitter 3:Collector 0 to 0.1 ■ Absolute Maximum Ratings 0.65±0.15 2 +0.2 ● 1.5 –0.05 0.8 ● +0.2 ● 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● +0.25 0.65±0.15 0.4 –0.05 ■ Features JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : N Internal Connection C B ■ Electrical Characteristics E (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 100 nA 13 23 V 13 23 V Collector cutoff current ICBO VCB = 5V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 Collector to emitter voltage VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE*1 VCE = 2V, IC = 0.5A*2 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA*2 0.13 0.4 V Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA*2 0.92 1.2 V Transition frequency fT VCB = 10V, IE = –30mA, f = 200MHz 170 5 V 200 800 MHz *2 *1h FE Pulse measurement Rank classification Rank R S T hFE 200 ~ 350 300 ~ 500 400 ~ 800 Marking Symbol NR NS NT 1 2SD1679 Transistor IC — VCE 200 IB=100µA 25 Collector current IC (mA) 160 120 80 40 90µA 20 80µA 70µA 15 60µA 50µA 10 40µA 30µA 5 20µA 10µA 0 0 40 80 120 160 200 0 Ambient temperature Ta (˚C) 2 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 1 3 10 Collector current IC (A) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 25 20 15 10 5 0 1 3 10 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 240 Ta=75˚C 500 25˚C 400 300 –25˚C 200 100 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 30 12 3 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 600 IC/IB=25 0.1 8 IC/IB=25 hFE — IC 100 0.01 0.01 0.03 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 VCB=10V Ta=25˚C Transition frequency fT (MHz) Collector power dissipation PC (mW) Ta=25˚C 0 2 VCE(sat) — IC 30 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 240 10 200 160 120 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)