Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Symbol 0.15–0.05 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : AL (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE VCE = –10V, IC = –2mA 200 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA – 0.1 Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz 250 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 1.5 pF Collector cutoff current *h FE V 500 – 0.3 V Rank classification Rank Q R hFE 200 ~ 400 250 ~ 500 Marking Symbol ALQ ALR 1 2SA1748 Transistor PC — Ta IC — VCE –60 –100 160 120 80 40 –80 IB=–300µA –250µA –60 –200µA –150µA –40 –100µA –20 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –1 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 –10 –30 –100 –300 –1000 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –6 –8 –10 –12 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –30 –100 Collector to base voltage VCB (V) –1.2 Base to emitter voltage VBE (V) fT — IE 600 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 6 –20 VCE=–10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –3 –3 –4 600 IC/IB=10 –10 – 0.01 –1 –30 hFE — IC –30 – 0.3 –40 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –25˚C 0 0 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 40 Ta=75˚C –10 –50µA 0 20 25˚C –50 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=–10V Ta=25˚C 0 2 IC — VBE –120 Collector current IC (mA) Collector power dissipation PC (mW) 240 –100 500 400 300 200 100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100