BGS15MA12 Data Sheet (738 KB, EN)

BGS15MA12
SP5T Rx Diversity Switch
Data Sheet
Revision 3.1 - 2016-05-11
Power Management & Multimarket
Edition 2016-05-11
Published by Infineon Technologies AG
81726 Munich, Germany
c
2016
Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used
in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the
safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
BGS15MA12
Revision History
Document No.: BGS15MA12__v3.1.pdf
Revision History: Rev. v3.1
Previous Version: Revision v3.0 - 2015-07-24
Page
Subjects (major changes since last revision)
20
Carrier Tape drawing updated (Fig. 12)
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Data Sheet
3
Revision 3.1 - 2016-05-11
BGS15MA12
Contents
1 Features
5
2 Product Description
5
3 Maximum Ratings
6
4 Operation Ranges
8
5 RF Characteristics
9
6 MIPI RFFE Specification
11
7 Application Information
17
8 Package Information
19
List of Figures
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BGS15MA12 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MIPI to RF Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-Up Settling Time Definition: a) when the device is already in Active Mode. b) when changing
from Low Power Mode to Active Mode.
After Power-Up of VIO the device is set to Low Power Mode. An additional MIPI instruction is necessary
to set the switch to Active Mode. This case is covered by b). . . . . . . . . . . . . . . . . . . . . . . . .
Received clock signal constraints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bus active data receiver timing requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bus park cycle timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bus active data transmission timing specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Requirements for VIO-initiated reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BGS15MA12 Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BGS15MA12 Application Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ATSLP-12-4 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Specification (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Footprint Recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ATSLP-12-4 Carrier Tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
10
10
12
13
13
14
14
17
18
19
19
20
20
List of Tables
1
2
3
4
5
6
7
8
9
10
11
12
13
Ordering Information . . . .
Maximum Ratings, Table I .
Maximum Ratings, Table II .
Operation Ranges . . . . .
RF Input Power . . . . . . .
RF Characteristics . . . . .
MIPI Features . . . . . . . .
Startup Behavior . . . . . .
MIPI RFFE operating timing
Register Mapping . . . . . .
Truth Table, Register_0 . .
Pin Definition and Function
Bill of Materials . . . . . . .
Data Sheet
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Revision 3.1 - 2016-05-11
BGS15MA12
BGS15MA12 SP5T Rx Diversity Switch
1 Features
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• Suitable for LTE / WCDMA Rx Applications
• 0.1 to 2.9 GHz coverage
• No decoupling capacitors required if no DC applied on RF lines
• On chip control logic including ESD protection
• Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage
range
• Software programmable MIPI RFFE USID
• Direct to battery supply
• Small form factor 1.1 mm x 1.9 mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
2 Product Description
The BGS15MA12 RF MOS switch is specifically designed for LTE and WCDMA diversity applications. This SP5T
offers low insertion loss and low harmonic generation in termination mode.
The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from
1.1 to 1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The
BGS15MA12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs
with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device
has a very small size of only 1.1 x 1.9 mm2 and a maximum height of 0.65 mm.
Table 1: Ordering Information
Type
Package
Marking
Chip
BGS15MA12
ATSLP-12-4
S4
m4829
Data Sheet
5
Revision 3.1 - 2016-05-11
BGS15MA12
RX1
RX2
RX3
RX4
RX5
AI
SP5T
VBAT
VIO
MIPI-RFFE
ControlOInterface
GND
SSEL1
SCLK
SDATA
SSEL2
Figure 1: BGS15MA12 Block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Frequency Range
f
0.1
–
–
GHz
1)
Supply voltage
VBAT
-0.5
–
6.0
V
–
150
◦
C
–
C
–
Storage temperature range
TSTG
-55
–
Junction temperature
Tj
–
–
125
◦
RF input power at all RX ports
PRF_RX
–
–
27
dBm
CW
2)
VESD_CDM
-1
–
+1
V
All pins
3)
VESD_HBM
-1
–
+1
kV
Digital, digital versus RF
-1
–
+1
kV
RF
ESD capability, CDM
ESD capability, HBM
1) There
is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V.
Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 kΩ, C=100 pF).
4) IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge.
2) Field-Induced
Data Sheet
6
Revision 3.1 - 2016-05-11
BGS15MA12
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Maximum DC-voltage on RF-
Symbol
VRFDC
Values
Min.
Typ.
Max.
0
–
0
Unit
Note / Test Condition
V
No DC voltages allowed on
Ports and RF-Ground
RF-Ports
RFFE Supply Voltage
VIO
-0.5
–
RFFE Control Voltage Lev-
V
-0.7
–
3
V
–
VIO+0.7
V
–
els at SCLK, SDATA, SSEL1,
(max.
SSEL2
3)
Data Sheet
7
Revision 3.1 - 2016-05-11
BGS15MA12
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
VBAT
2.2
–
5.5
V
–
Supply current
IBAT
–
80
200
µA
–
Supply current in standby
IBAT_SB
–
0.5
1
µA
VIO=low or MIPI low-power
Supply voltage
3)
3)
mode
mode
RFFE supply voltage
VIO
1.1
1.8
1.95
V
–
VIH
0.7*VIO
–
VIO
V
–
RFFE input low voltage
VIL
0
–
0.3*VIO
V
–
RFFE output high voltage2)
VOH
0.8*VIO
–
VIO
V
–
RFFE output low voltage
VOL
0
–
0.2*VIO
V
–
RFFE control input capaci-
CCtrl
–
–
2
pF
–
IVIO
–
15
–
µA
Idle State
85
◦
–
1)
RFFE input high voltage
1)
2)
tance
RFFE supply current
Ambient temperature
1) SCLK,
TA
-30
25
C
SDATA, SSEL1 and SSEL2
2) SDATA
3) T
◦
◦
A = −30 C - 85 C, VBAT = 2.2 - 5.5 V
Table 5: RF Input Power
Parameter
RX ports (50 Ω)
Data Sheet
Symbol
PRF_RX
Values
Min.
Typ.
Max.
–
–
24
8
Unit
Note / Test Condition
dBm
–
Revision 3.1 - 2016-05-11
BGS15MA12
5 RF Characteristics
Table 6: RF Characteristics at TA = −30 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VBAT= 2.2 V–5.5 V, unless
otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
0.2
0.28
0.35
dB
700–1000 MHz
0.25
0.35
0.5
dB
1700–2200 MHz
0.3
0.42
0.6
dB
2300–2700 MHz
20
30
–
dB
700–1000 MHz
18
28
–
dB
1700–2200 MHz
12
22
–
dB
2300–2700 MHz
24
34
–
dB
700–1000 MHz
17
27
–
dB
1700–2200 MHz
15
25
–
dB
2300–2700 MHz
26
36
–
dB
700–1000 MHz
21
31
–
dB
1700–2200 MHz
18
28
–
dB
2300–2700 MHz
>30
–
–
dBm
-95
-75
dBc
1)
Insertion Loss
All RX Ports
IL
1)
Return Loss
All RX Ports
Isolation all RX Ports
Isolation RX Ports to AI
RL
ISO
ISO
P1 dB Compression Point, Extrapolated
All RX Ports
P1dB
Harmonic Generation up to 12.75 GHz
All RX Ports
PHarm
–
20 dBm, 50 Ω, CW mode
◦
2)
Intermodulation Distortion in Rx Band (TA = 25 C, VBAT= 2.6 V)
IMD2, low
IMD2low
–
-115
-105
dBm
IMD3
IMD3
–
-125
-110
dBm
IMD2, high
IMD2high
–
-120
-110
dBm
RF Rise Time RX Port On/Off
ton/off
0.5
1
5
µs
MIPI to RF Time
tINT
0.5
1.5
5
µs
Power Up Settling Time
t PUS
–
10
25
µs
Tx = 10 dBm,
Interferer = −15 dBm, 50 Ω
Switching Time
90 % OFF to 90 % ON;
90 % ON to 90 % OFF
50 % last SCLK falling flank to
90 % ON, Fig. 2
After power down mode,
Fig. 3
1) On
application board with a RF low-Q two element matching network at the antenna port
2) On application board with shunt inductor, Min/Max-values measured with phase shifter.
Data Sheet
9
Revision 3.1 - 2016-05-11
BGS15MA12
SDATA
TINT
SCLK
90%
RF Signal
Figure 2: MIPI to RF Time
VBAT
VIO
SDATA
SCLK
a)
TPUP
VBAT
VIO
SDATA
SCLK
b)
TPUP
Figure 3: Power-Up Settling Time Definition: a) when the device is already in Active Mode. b) when changing from
Low Power Mode to Active Mode.
After Power-Up of VIO the device is set to Low Power Mode. An additional MIPI instruction is necessary to
set the switch to Active Mode. This case is covered by b).
Data Sheet
10
Revision 3.1 - 2016-05-11
BGS15MA12
6 MIPI RFFE Specification
All sequences are implemented according to the ’MIPI Alliance Specification for RF Front-End Control Interface’
document version 1.10 - 26. July 2011.
Table 7: MIPI Features
Feature
Supported
Comment
Register write command sequence
Yes
Register read command sequence
Yes
Extended register write command sequence
No
Up to 4 Bytes
Extented register read command sequence
No
Up to 4 Bytes
Register 0 write command sequence
Yes
Trigger function
Yes
Programmable USID
Yes
Trigger assignment to each control register is supported
3 register command sequence and extended register command sequence
Status Register
Yes
Register for debugging
Reset
Yes
By VIO, Power Mode and RFFE_STATUS
Group SID
Yes
SSEL1 and SSEL2 pins
Yes
External pins for changing USID:
SSEL1=0 & SSEL2=0 → 1000,
SSEL1=0 & SSEL2=1 → 1001,
SSEL1=1 & SSEL2=0 → 1010,
SSEL1=1 & SSEL2=1 → 1011
Full speed write
Yes
Half speed read
Yes
Full speed read
Yes
Table 8: Startup Behavior
Feature
State
Comment
Power status
LOW POWER
The chip is in low power mode after startup
Trigger function
ENABLED
Trigger function is enabled after startup. Trigger function can be disabled via PM_TRIG register.
Data Sheet
11
Revision 3.1 - 2016-05-11
BGS15MA12
Table 9: MIPI RFFE Operating Timing
Parameter
Symbol
SCLK Frequency
FSCLK
SCLK Period
TSCLK
Values
Unit
Note / Test Condition
26
MHz
Full speed
–
13
MHz
Half speed
0.038
–
32
µs
Full speed
0.077
–
32
µs
Half speed
11.25
–
–
ns
Full speed, see Fig. 4
24
–
–
ns
Half speed, see Fig. 4
11.25
–
–
ns
Full speed, see Fig. 4
24
–
–
ns
Half speed, see Fig. 4
1
–
–
ns
Full speed, see Fig. 5
2
–
–
ns
Half speed, see Fig. 5
5
–
–
ns
Full speed, see Fig. 5
5
–
–
ns
Half speed, see Fig. 5
–
–
10
ns
Full speed, see Fig. 6
–
–
18
ns
Half speed, see Fig. 6
–
–
10.25
ns
Full speed, see Fig. 7
–
–
22
ns
Half speed, see Fig. 7
2.1
–
6.5
ns
Full speed, see Fig. 7
Min.
Typ.
Max.
0.032
–
0.032
SCLK Low Period
TSCLKIL
SCLK High Period
TSCLKIH
SDATA Setup Time
TS
SDATA Hold Time
TH
SDATA Release Time
TSDATAZ
Time for Data Output
TD
SDATA Rise/Fall Time
TSDATAOTR
2.1
–
10
ns
Half speed, see Fig. 7
VIO Rise Time
TVIO-R
10
–
450
µs
See Fig. 8
VIO Reset Time
TVIO-RST
10
–
–
µs
See Fig. 8
Reset Delay Time
TSIGOL
0.12
–
–
µs
See Fig. 8
TSCLKIH
TSCLKIL
VTPmax
VTNmin
Figure 4: Received clock signal constraints
Data Sheet
12
Revision 3.1 - 2016-05-11
BGS15MA12
VTPmax
SCLK
VTPmin
TS
TH
TS
TH
VTPmax
SDATA
VTPmin
Figure 5: Bus active data receiver timing requirements
VTPmax
SCLK
VTNmin
TSDATAZ
VOHmin
SDATA
VOLmax
Bus Park Cycle
Signal driven
Signal not driven, pull down only
TSDATAZ is measured from SCLK VTN level for a device receiving SCLK and driving SDATA lines
Figure 6: Bus park cycle timing
Data Sheet
13
Revision 3.1 - 2016-05-11
BGS15MA12
VTPmax
SCLK
VTPmin
TD
TD
TSDATAOTR
TSDATAOTR
VOHmin
SDATA
VOLmax
Figure 7: Bus active data transmission timing specification
TSIGOL
VIO (V)
VIOmax
Not To Scale
VIOmin
SCLK & SDATA must be
held at low level from
deassertion of VIO until
the end of TSIGOL
TVIO-RST
All slave registers
set/reset to
manufacturer‘s
defaults
TVIO-R
VVIO-RST
(0.2V)
Time
Figure 8: Requirements for VIO-initiated reset
Data Sheet
14
Revision 3.1 - 2016-05-11
BGS15MA12
Table 10: Register Mapping
Register
Address
0x0000
0x001D
Register Name
Function
Description
REGISTER_0
PRODUCT_ID
Data
Bits
7:0
7:0
MODE_CTRL
PRODUCT_ID
0x001E
MANUFACTURER_ID
7:0
MANUFACTURER_ID [7:0]
0x001C
PM_TRIG
7:6
PWR_MODE
Switch control
This is a read-only register. However,
during the programming of the USID
a write command sequence is performed on this register, even though
the write does not change its value.
This is a read-only register. However,
during the programming of the USID,
a write command sequence is performed on this register, even though
the write does not change its value.
00: Normal operation
01: Default settings (STARTUP)
10: Low power (LOW POWER)
11: Reserved
If this bit is set, trigger 2 is disabled.
When all triggers disabled, if writing to
a register that is associated to trigger
2, the data goes directly to the destination register.
If this bit is set, trigger 1 is disabled.
When all triggers disabled, if writing to
a register that is associated to trigger
1, the data goes directly to the destination register.
If this bit is set, trigger 0 is disabled.
When all triggers disabled, if writing to
a register that is associated to trigger
0, the data goes directly to the destination register.
A write of a one to this bit loads trigger
2’s registers.
A write of a one to this bit loads trigger
1’s registers.
A write of a one to this bit loads trigger
0’s registers.
These are read-only bits that are reserved and yield a value of 0b00 at
readback.
These bits are read-only. However,
during the programming of the USID,
a write command sequence is performed on this register even though
the write does not change its value.
Programmable USID. Performing a
write to this register using the described programming sequences will
program the USID in devices supporting this feature. These bits store the
USID of the device.
0x001F
MAN_USID
5
TRIGGER_MASK_2
4
TRIGGER_MASK_1
3
TRIGGER_MASK_0
2
TRIGGER_2
1
TRIGGER_1
0
TRIGGER_0
7:6
SPARE
5:4
MANUFACTURER_ID [9:8]
3:0
USID
Default
00000000
11010000
Broadcast_ID
Support
No
No
Trigger
Support
Yes
No
R/W
R/W
R
00011010
No
No
R
10
Yes
No
R/W
0
No
No
0
No
No
0
No
No
0
Yes
No
0
Yes
No
0
Yes
No
00
No
No
R/W
R/W
01
USID_Sel12
=00 →
1000,
USID_Sel12
=01 →
1001,
USID_Sel12
=10 →
1010,
USID_Sel12
=11 →
1011
Continued on next page
Data Sheet
15
Revision 3.1 - 2016-05-11
BGS15MA12
Table 10: Register Mapping – Continued from previous page
Register
Address
0x001A
Register Name
RFFE_STATUS
Data
Bits
7
6
5
4
3
2
1
0
0x001B
GROUP_SID
7:4
3:0
Function
Description
SOFTWARE RESET
0: Normal operation
1: Software reset
Command sequence received with
parity error - discard command.
Command length error
Address frame parity error = 1
0
Data frame with parity error
0
Read command to an invalid address
Write command to an invalid address
Read command with a BROADCAST_ID or GROUP_SID
0
0
0
COMMAND_FRAME_
PARITY_ERR
COMMAND_LENGTH_ERR
ADDRESS_FRAME_
PARITY_ERR
DATA_FRAME_
PARITY_ERR
READ_UNUSED_REG
WRITE_UNUSED_REG
BID_GID_ERR
RESERVED
GROUP_SID
Default
0
Trigger
Support
No
R/W
R/W
No
No
R
No
No
R/W
0
0
0
0
Group slave ID
Broadcast_ID
Support
No
Table 11: Modes of Operation (Truth Table, Register_0)
REGISTER_0 Bits
State
Mode
D7
D6
D5
D4
D3
D2
D1
D0
1
Isolation
x
x
x
0
0
0
0
0
2
RX1-AI
x
x
x
0
0
0
0
1
3
RX2-AI
x
x
x
0
0
0
1
0
4
RX3-AI
x
x
x
0
1
0
0
0
5
RX4-AI
x
x
x
0
0
1
0
0
6
RX5-AI
x
x
x
1
0
0
0
0
7
RX1&RX2-AI
x
x
x
0
0
0
1
1
8
RX2&RX3-AI
x
x
x
0
1
0
1
0
9
RX3&RX4-AI
x
x
x
0
1
1
0
0
10
RX4&RX5-AI
x
x
x
1
0
1
0
0
11
RX1&RX3-AI
x
x
x
0
1
0
0
1
12
RX2&RX4-AI
x
x
x
0
0
1
1
0
13
RX3&RX5-AI
x
x
x
1
1
0
0
0
14
RX1&RX4-AI
x
x
x
0
0
1
0
1
15
RX2&RX5-AI
x
x
x
1
0
0
1
0
16
RX1&RX5-AI
x
x
x
1
0
0
0
1
Data Sheet
16
Revision 3.1 - 2016-05-11
BGS15MA12
7 Application Information
Pin Configuration and Function
1
12
10
13
2
3
11
4
5
9
8
6
7
Figure 9: BGS15MA12 Pin Configuration (top view)
Table 12: Pin Definition and Function
Pin No.
Name
Function
1
SLK
MIPI RFFE Clock (Input)
2
VIO
MIPI RFFE Power Supply
3
RX5
RF-Port RX No. 5
4
RX4
RF-Port RX No. 4
5
RX3
RF-Port RX No. 3
6
RX2
RF-Port RX No. 2
7
RX1
RF-Port RX No. 1
8
SSEL1
MIPI SEL Port No. 1 (Input)
9
SSEL2
MIPI SEL Port No. 2 (Input)
10
AI
RF-Input Port
11
VBAT
Power Supply
12
SDATA
MIPI RFFE Data (Input / Output)
13
GND
Ground
Data Sheet
17
Revision 3.1 - 2016-05-11
BGS15MA12
Application Board Configuration
RX1
RX2
RX3
RX4
RX5
AI
SP5T
VBAT=2.8V
VIO=1.8V
C1
(optionalp
C2
(optionalp
MIPI-RFFE
ControlNInterface
SCLK
SDATA
GND
C3
(optionalp
C4
(optionalp
SSEL1=0/1.8V
SSEL2=0/1.8V
Figure 10: BGS15MA12 Application Schematic
Table 13: Bill of Materials Table
Name
Value
Package
Manufacturer
Function
C1 (optional)
1 nF
0201
Various
RF Bypass1)
C2 (optional)
1 nF
0201
Various
RF Bypass1)
C3 (optional)
1 nF
0201
Various
RF Bypass1)
C4 (optional)
1 nF
0201
Various
RF Bypass1)
N1
BGS15MA12
ATSLP-12-4
Infineon
RF MOS Switch
1) RF
bypass recommended to mitigate power supply noise
Data Sheet
18
Revision 3.1 - 2016-05-11
BGS15MA12
8 Package Information
Top view
Bottom view
9
6
10
5
11
4
12
0.4
B
8
3
2
1
0.1 A
0.1 A
0.1 B
7
0.2 ±0.05
12x
0.2 ±0.05
12x
Pin 1 marking
0.2 ±0.05
0.1 B
0.4
4 x 0.4 = 1.6
A
0.05 MAX.
STANDOFF
1.9 ±0.05
1.1±0.05
0.75 ±0.05
0.6 ±0.05
2 x 0.4 = 0.8
ATSLP-12-1, -2, -3, -4, -5, -7-PO V03
Figure 11: ATSLP-12-4 Package Outline (top, side and bottom views)
12
Type code
Date code
(YW)
Pin 1 marking
ATSLP-12-1, -2, -3, -4, -5, -7-MK V03
Figure 12: Marking Specification (top view)
Data Sheet
19
Revision 3.1 - 2016-05-11
BGS15MA12
0.4
0.4
0.25
0.25
0.25
Copper
0.8
0.4
0.4
0.8
0.25
0.25
Stencil apertures
Solder mask
ATSLP-12-1, -2, -3, -4, -5, -7-FP V01
Figure 13: Footprint Recommendation
4
8
2.1
Pin 1
marking
0.75
1.3
ATSLP-12-1, -2, -3, -4, -5, -7-TP V02
Figure 14: ATSLP-12-4 Carrier Tape
Data Sheet
20
Revision 3.1 - 2016-05-11
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG