TISP4xxxH3LM

PL
IA
NT
CO
M
*R
oH
S
TISP4070H3LM THRU TISP4115H3LM,
TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3LM Overvoltage Protector Series
TISP4xxxH3LM Overview
This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3LM is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used.
These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN
60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3LM meets the FCC Part 68 “B” ringer voltage requirement and survives the
Type A and B impulse tests. These devices are housed in a through-hole DO-92 package (TO-92 package with cropped center leg).
Summary Electrical Characteristics
TISP4070H3
TISP4080H3
TISP4095H3
TISP4115H3
TISP4125H3
TISP4145H3
TISP4165H3
TISP4180H3
VDRM
V
58
65
75
90
100
120
135
145
V(BO)
V
70
80
95
115
125
145
165
180
VT @ IT
V
3
3
3
3
3
3
3
3
IDRM
A
5
5
5
5
5
5
5
5
I(BO)
mA
600
600
600
600
600
600
600
600
IT
A
5
5
5
5
5
5
5
5
IH
mA
150
150
150
150
150
150
150
150
Co @ -2 V
pF
120
120
120
120
65
65
65
65
Functionally
Replaces
P0640EC†
P0720EC†
P0900EC†
P1100EC†
TISP4220H3
TISP4240H3
TISP4250H3
TISP4260H3
TISP4290H3
TISP4300H3
TISP4350H3
TISP4395H3
TISP4400H3
160
180
190
200
220
230
275
320
300
220
240
250
260
290
300
350
395
400
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
5
5
600
600
600
600
600
600
600
600
600
5
5
5
5
5
5
5
5
5
150
150
150
150
150
150
150
150
150
65
55
55
55
55
55
55
55
55
P1800EC
Part #
E
T
E
L
O
S
B
O
P1300EC†
P1500EC
P2300EC†
P2600EC†
P3100EC
P3500EC†
† Bourns part has an improved protection voltage
Summary Current Ratings
ITSP
A
Parameter
Waveshape
Value
2/10
500
1.2/50, 8/20
300
10/160
250
NOVEMBER 1997 - REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
5/320
200
10/560
160
10/1000
100
ITSM
A
1 cycle 60 Hz
60
di/dt
A/μs
2/10 Wavefront
400
TISP4xxxH3LM Overvoltage Protector Series
ITU-T K.20/21 Rating ............................ 8 kV 10/700, 100 A 5/310
LM Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
VDRM
V(BO)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
V
58
65
75
90
100
120
135
145
V
70
80
95
115
125
145
165
180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
160
180
190
200
220
230
275
320
300
220
240
250
260
290
300
350
395
400
Device
T(A)
NC
R(B)
1
2
3
MD4XAT
NC - No internal connection on pin 2
LMF Package (LM Package with Formed Leads) (Top View)
T(A)
1
2
3
NC
R(B)
E
T
E
L
O
S
B
O
MD4XAKB
NC - No internal connection on pin 2
Device Symbol
T
Rated for International Surge Wave Shapes
Waveshape
Standard
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
ITSP
R
A
500
300
250
200
160
100
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Low Differential Capacitance ...................................... 80 pF max.
................................................UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations
of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent
d.c. latchup as the diverted current subsides.
How to Order
Device
TISP4xxxH3LM
Package
Straight Lead DO-92 (LM)
Carrier
Bulk Pack
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled
Order As
TISP4xxxH3LM-S
TISP4xxxH3LMR-S
TISP4xxxH3LMFR-S
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
TISP4xxxH3LM Overvoltage Protector Series
Description (Continued)
This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied
in a DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A
10/1000 TISP4xxxM3LM series is available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
Value
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±160
±180
±190
±200
±220
±230
±275
±320
±300
E
T
E
L
O
S
B
O
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
VDRM
ITSP
500
300
250
220
200
200
200
200
160
100
Unit
V
A
ITSM
55
60
2.3
A
diT/dt
TJ
Tstg
400
-40 to +150
-65 to +150
A/µs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH3LM must be in thermal equilibrium with TJ = 25 °C.
The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM
TISP4xxxF3LMOvervoltage
OvervoltageProtector
ProtectorSeries
Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
VD = ±V DRM
V(BO)
Breakover voltage
dv/dt = ±750 V/ms,
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000
Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A
Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
Min
TA = 25 °C
TA = 85 °C
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
E
T
E
L
O
S
B
O
RSOURCE =
dv/dt = ±750 V/ms, RSOURCE =
IT = ±5 A,t W = 100
IT = ±5 A,d i/dt = - / +30 mA/ms
±0.15
±0.15
Max
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±220
±240
±250
±260
±290
±300
±350
±395
±400
±78
±88
±103
±124
±134
±154
±174
±189
±230
±250
±261
±271
±301
±311
±362
±408
±413
±0.6
±3
±0.6
±5
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Typ
TA = 85 °C
Unit
V
V
A
V
A
kV
±10
μA
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM
TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -1 V
Coff
Off-state capacitance
f = 100 kHz, Vd = 1 V rms, VD = -2 V
E
T
E
L
O
S
B
O
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
NOTE
Parameter
NOTE
Typ
172
95
92
157
85
80
145
78
72
70
33
28
25
22
Max
218
120
115
200
110
100
185
100
90
90
43
35
33
28
Unit
Typ
Max
Unit
pF
6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
Thermal Characteristics
R θJA
Min
4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
Junction to free air thermal resistance
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
105
°C/W
55
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
E
T
E
L
O
S
B
O
IDRM
ID
VD
ID
VD
VDRM
+v
IH
I(BO)
V(BO)
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAS
102
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
1.10
TC4HAF
VD = ±50 V
Normalized Breakover Voltage
|ID| - Off-State Current - µA
101
100
10-1
1.05
E
T
E
L
O
S
B
O
10-2
10-3
10-4
1.00
0.95
10-5
-25
0
25
50
75
100
125
TJ - Junction Temperature - °C
-25
150
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
200
150
100
TA = 25 °C
tW = 100 µs
Normalized Holding Current
IT - On-State Current - A
2
1.5
1
0.7
'4125
THRU
'4220
'4240
THRU
'4400
1
TC4HAD
1.5
20
15
5
4
3
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
2.0
TC4HACB
50
40
30
7
150
Figure 3.
70
10
0
25
50
75
100 125
TJ - Junction Temperature - °C
1.0
0.9
0.8
0.7
0.6
0.5
'4070
THRU
'4115
0.4
1.5
2
3
4 5
VT - On-State Voltage - V
7
Figure 4.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 5.
150
TISP4xxxH3LM Overvoltage Protector Series
Typical Characteristics
Capacitance Normalized to VD = 0
0.7
0.6
0.5
'4125 THRU '4220
0.3
'4240 THRU '4400
0.2
0.5
'4145
'4165
'4180
'4125
80
75
70
E
T
E
L
O
S
B
O
'4070 THRU '4115
0.4
85
'4115
TJ = 25 °C
Vd = 1 Vrms
0.8
'4095
0.9
TCHATB
90
'4220
'4240
'4250
'4260
'4290
'4300
'4350
'4395
'4400
TC4HAQA
'4070
'4080
1
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
C - Differential Off-State Capacitance - pF
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
C = Coff(-2 V) - Coff(-50 V)
65
60
55
50
45
40
1
2
3
5
10
20 30
VD - Off-state Voltage - V
Figure 6.
50
100150
50
60 70 80 90100
150
200 250 300
VDRM - Repetitive Peak Off-State Voltage - V
Figure 7.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
Rating and Thermal Information
THERMAL IMPEDANCE
vs
POWER DURATION
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
20
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
15
10
9
8
7
6
5
100
80
60
50
40
30
E
T
E
L
O
S
B
O
4
3
2
1.5
0·1
1
10
100
20
15
10
8
1
10
100
1000
t - Power Duration - s
Figure 8.
Figure 9.
IMPULSE RATING
vs
AMBIENT TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4HAIA
1.00
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
3
2
0·1
1000
ITSM(t) APPLIED FOR TIME t
6
5
4
t - Current Duration - s
700
600
0.99
TC4HAA
BELLCORE 2/10
500
400
Impulse Current - A
0.98
Derating Factor
TI4HAG
150
ZθJA(t) - Transient Thermal Impedance - °C/W
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
0.97
'4070 THRU '4115
0.96
0.95
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
150
'4125 THRU '4220
120
0.94
BELLCORE 10/1000
'4240 THRU '4440
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 11.
TISP4xxxH3LM Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors
(Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3
Th1
Th1
Th2
E
T
E
L
O
S
B
O
Figure 12. Two Point Protection
Figure 13. Multi-point Protection
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to
protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each
conductor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its
±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then
protector Th1 is not required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave
forms. The table below shows some common values.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
2/10
10/1000
10/160
10/560
9/720 †
9/720 †
0.5/700
Peak Current
Value
A
Current
Waveform
µs
TISP4xxxH3
25 °C Rating
A
Series
Resistance
Ω
2500
500
2/10
500
0
1000
100
10/1000
100
1500
200
10/160
250
0
800
100
10/560
160
0
FCC Part 68
(March 1998)
1500
37.5
5/320 †
200
0
1000
25
5/320 †
200
0
I3124
1500
37.5
0.2/310
200
0
37.5
1500
5/310
200
0
ITU-T K.20/K 21
10/700
100
4000
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
GR-1089-CORE
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current
versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time
limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
APPLICATIONS INFORMATION
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given
in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be
about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at
-50 V.
Normal System Voltage Levels
E
T
E
L
O
S
B
O
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating
the ring trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the
maximum normal system voltages. The TISP4260H3LM, with a VDRM of 200 V, can be used for the protection of ring generators producing
100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of
-28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -28 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the
smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal
resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
Typical Circuits
TIP
WIRE
MODEM
FUSE
TIP
WIRE
R1a
RING DETECTOR
Th3
HOOK SWITCH
TISP4350
OR
TISP4400
RING
WIRE
PROTECTED
EQUIPMENT
Th1
D.C. SINK
E.G. LINE CARD
Th2
SIGNAL
AI6XBM
R1b
RING
WIRE
AI6XBK
E
T
E
L
O
S
B
O
Figure 14. MODEM IN TER-WIRE PROTECTION
Figure 15. PROTECTION MODULE
R1a
Th3
SIGNAL
Th1
Th2
R1b
AI6XBL
D.C.
Figure 16. ISDN PROTECTION
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
S3a
R1a
Th3
S1a
SLIC
PROTECTION
Th4
S2a
SLIC
Th1
Th2
RING
WIRE
Th5
R1b
S3b
S1b
S2b
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
C1
220 nF
TEST
EQUIPMENT
RING
GENERATOR
VBAT
AI6XBJ
Figure 17. LINE CARD RING/TEST PROTECTION
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3LM Overvoltage Protector Series
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as below.
TISP4070H3LM
TISP4080H3LM
Symbolization
Code
4070H3
4080H3
TISP4095H3LM
TISP4115H3LM
TISP4125H3LM
TISP4145H3LM
TISP4165H3LM
TISP4180H3LM
TISP4220H3LM
TISP4240H3LM
TISP4250H3LM
TISP4260H3LM
TISP4290H3LM
TISP4300H3LM
TISP4350H3LM
TISP4395H3LM
TISP4400H3LM
4095H3
4115H3
4125H3
4145H3
4165H3
4180H3
4220H3
4240H3
4250H3
4260H3
4290H3
4300H3
4350H3
4395H3
4400H3
Device
Carrier Information
E
T
E
L
O
S
B
O
Devices are shipped in one of the carriers below. A reel contains 2,000 devices.
Package Type
Straight Lead DO-92
Straight Lead DO-92
Carrier
Bulk Pack
Tape and Reeled
Order As
TISP4xxxH3LM-S
TISP4xxxH3LMR-S
Formed Lead DO-92
Tape and Reeled
TISP4xxxH3LMFR-S
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.