BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating This series is obsolete and not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage E T E L O S B O BD539B BD539C V CBO BD539D BD539 Collector-emitter voltage (see Note 1) Emitter-base voltage Continuous collector current BD539A BD539B BD539C BD539D UNIT 40 BD539 BD539A VALUE V CEO VEBO IC 60 80 100 V 120 40 60 80 100 120 V 5 V 5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Operating free air temperature range TA -65 to +150 °C Tstg -65 to +150 Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Ptot Tj TL 2 -65 to +150 260 W °C °C °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE(on) hfe |hfe | Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 4) BD539 40 BD539A 60 BD539B 80 BD539C 100 BD539D 120 TYP MAX V VCE = 40 V VBE = 0 BD539 0.2 VCE = 60 V VBE = 0 BD539A 0.2 VCE = 80 V VBE = 0 BD539B 0.2 VCE = 100 V VBE = 0 BD539C 0.2 VCE = 120 V VBE = 0 BD539D 0.2 VCE = 30 V IB = 0 BD539/539A 0.3 VCE = 60 V IB = 0 BD539B/539C 0.3 VCE = 90 V IB = 0 BD539D 0.3 VEB = 5V IC = 0 VCE = 4V IC = 0.5 A VCE = 4V IC = 1 4V IC = 3A IB = 125 mA IC = 1A IB = 375 mA IC = 3A IB = 1A IC = 5A VCE = 4V IC = 3A mA mA mA 40 1A (see Notes 4 and 5) 30 E T E L O S B O VCE = UNIT 12 0.25 (see Notes 4 and 5) 0.8 (see Notes 4 and 5) VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 V 1.5 1.25 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -4.3 V RL = 30 Ω tp = 20 µs, dc ≤ 2% 0.5 µs 2 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 0·1 TCS631AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·0 0·1 IC = IC = IC = IC = 100 mA 300 mA 1A 3A E T E L O S B O 1·0 10 0·01 0·1 IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS631AI 1·0 0·1 BD539 BD539A BD539B BD539C BD539D E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AC Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.