BD239, BD239A, BD239B, BD239C

BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD240 Series
TO-220 PACKAGE
(TOP VIEW)
30 W at 25°C Case Temperature
2 A Continuous Collector Current
4 A Peak Collector Current
B
1
C
2
Customer-Specified Selections Available
E
3
This series is OBSOLETEANDNOT
recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD239
Collector-emitter voltage (RBE = 100 Ω)
BD239A
VCER
BD239C
BD239
Collector-emitter voltage (IC = 30 mA)
Emitter-base voltage
Continuous collector current
BD239A
BD239B
BD239C
V CEO
VEBO
IC
Peak collector current (see Note 1)
ICM
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
Continuous base current
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
UNIT
55
E
T
E
L
O
S
B
O
BD239B
VALUE
70
90
115
45
60
80
100
5
2
4
IB
0.6
Ptot
2
½LIC2
V
V
A
A
A
30
W
32
mJ
Tj
-65 to +150
TL
250
Tstg
V
-65 to +150
W
°C
°C
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD239
45
BD239A
60
BD239B
80
BD239C
100
TYP
MAX
V
VCE = 55 V
VBE = 0
BD239
0.2
Collector-emitter
VCE = 70 V
VBE = 0
BD239A
0.2
cut-off current
VCE = 90 V
VBE = 0
BD239B
0.2
VCE = 115 V
VBE = 0
BD239C
0.2
Collector cut-off
VCE = 30 V
IB = 0
BD239/239A
0.3
current
VCE = 60 V
IB = 0
BD239B/239C
0.3
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 0.2 A
transfer ratio
VCE =
4V
IC =
1A
0.2 A
IC =
1A
4V
IC =
1A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IB =
VCE =
UNIT
mA
mA
1
µA
(see Notes 5 and 6)
0.7
V
(see Notes 5 and 6)
1.3
V
(see Notes 5 and 6)
40
15
E
T
E
L
O
S
B
O
VCE = 10 V
IC = 0.2 A
f = 1 kHz
20
VCE = 10 V
IC = 0.2 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
4.17
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 200 mA
IB(on) = 20 mA
IB(off) = -20 mA
0.3
µs
toff
Turn-off time
VBE(off) = -3.4 V
RL = 150 Ω
tp = 20 µs, dc ≤ 2%
0.8
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE = 4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
100
10
0·01
TCS631AE
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS631AG
1000
hFE - DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC = 100 mA
IC = 300 mA
IC = 1 A
1·0
0·1
E
T
E
L
O
S
B
O
0·1
0·01
0·1
1·0
IC - Collector Current - A
1·0
10
100
1000
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
TCS631AF
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS631AE
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD239
BD239A
BD239B
BD239C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AB
Ptot - Maximum Power Dissipation - W
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.