BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD539 Series ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) (see Note 1) BD540B V CBO -60 -80 BD540C -100 BD540 -40 BD540A BD540B UNIT -40 BD540 BD540A VALUE VCEO -60 -80 V V -100 BD540C VEBO -5 IC -5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150 °C °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds V Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 4) BD540 -40 BD540A -60 BD540B -80 BD540C -100 TYP MAX V VCE = -40 V VBE = 0 BD540 -0.2 Collector-emitter VCE = -60 V VBE = 0 BD540A -0.2 cut-off current VCE = -80 V VBE = 0 BD540B -0.2 VCE = -100 V VBE = 0 BD540C -0.2 Collector cut-off VCE = -30 V IB = 0 BD540/540A -0.3 current VCE = -60 V IB = 0 BD540B/540C -0.3 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -1 VCE = -4 V IC = -0.5 A VCE = -4 V IC = -1 A VCE = -4 V IC = -3 A IB = -125 mA IC = - 1A IB = -375 mA IC = -3 A IB = -1 A IC = - 5A VCE = -4 V IC = -3 A UNIT mA mA mA 40 (see Notes 4 and 5) 30 12 -0.25 (see Notes 4 and 5) -0.8 V -1.5 (see Notes 4 and 5) -1.25 VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -1 A IB(on) = -0.1 A IB(off) = 0.1 A toff Turn-off time VBE(off) = 4.3 V RL = 30 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V tp = 300 µs, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V TCS632AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TC = 25°C TC = 80°C 100 10 -0·01 -0·1 -1·0 -10 TCS632AB -10 -1·0 -0·1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A -0·01 -0·1 IC - Collector Current - A -1·0 -10 -100 -1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1 TCS632AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -0·9 -0·8 -0·7 -0·6 -0·5 -0·01 -0·1 -1 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS632AE -1·0 -0·1 BD540 BD540A BD540B BD540C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AC Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5