BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDX54 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDX54A V CBO -80 BDX54C -100 -45 BDX54B V CEO BDX54C Emitter-base voltage -60 BDX54 BDX54A UNIT -45 E T E L O S B O BDX54B VALUE -60 -80 V V -100 VEBO -5 IC -8 A IB -0.2 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 60 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Continuous collector current Continuous base current Operating junction temperature range Operating temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(sat) VCE(sat) VEC Collector-emitter TEST CONDITIONS MIN BDX54 -45 BDX54A -60 BDX54B -80 BDX54C -100 TYP MAX V IC = -100 mA IB = 0 VCE = -30 V IB = 0 BDX54 -0.5 Collector-emitter VCE = -30 V IB = 0 BDX54A -0.5 cut-off current VCE = -40 V IB = 0 BDX54B -0.5 breakdown voltage (see Note 3) VCE = -50 V IB = 0 BDX54C -0.5 VCB = -45 V IE = 0 BDX54 -0.2 Collector cut-off VCB = -60 V IE = 0 BDX54A -0.2 current VCB = -80 V IE = 0 BDX54B -0.2 VCB = -100 V IE = 0 BDX54C -0.2 VEB = -5 V IC = 0 VCE = -3 V IC = -3 A (see Notes 3 and 4) IB = -12 mA IC = -3 A IB = -12 mA IC = -3 A Emitter cut-off current Forward current transfer ratio Base-emitter saturation voltage Collector-emitter saturation voltage Parallel diode forward voltage -3 A mA mA -2 mA (see Notes 3 and 4) -2.5 V (see Notes 3 and 4) -2 V -2.5 V 750 E T E L O S B O IE = UNIT IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.08 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs toff Turn-off time VBE(off) = 4.2 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS125AG 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 -1·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -2·5 -2·0 -1·5 -1·0 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS125AH -3·0 -0·5 -10 0 -0·5 IC - Collector Current - A -1·0 TC = -40°C TC = 25°C TC = 100°C -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS125AI VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·0 TC = -40°C TC = 25°C TC = 100°C -2·5 -1·0 -1·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS125AD IC - Collector Current - A DC Operation tp = 300 µs, d = 0.1 = 10% -10 -1·0 BDX54 BDX54A BDX54B BDX54C E T E L O S B O -0·1 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.