TIC216 Series

TIC216 SERIES
SILICON TRIACS
●
Sensitive Gate Triacs
●
6 A RMS
●
Glass Passivated Wafer
MT1
1
●
400 V to 800 V Off-State Voltage
MT2
2
●
Max IGT of 5 mA (Quadrants 1 - 3)
G
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC216D
E
T
E
L
O
S
B
O
TIC216M
Repetitive peak off-state voltage (see Note 1)
TIC216S
600
VDRM
V
700
TIC216N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
UNIT
400
800
IT(RMS)
6
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3)
ITSM
60
A
Peak gate current
IGM
±1
A
W
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
A
PGM
2.2
PG(AV)
0.9
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
Repetitive peak
off-state current
TEST CONDITIONS
VD = rated VDRM
IG = 0
MIN
TC = 110°C
TYP
MAX
UNIT
±2
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
5
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-5
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-5
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
10
mA
† All voltages are with respect to Main Terminal 1.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC216 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
VGT
VT
TYP
MAX
tp(g) > 20 µs
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-2.2
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-2.2
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
3
On-state voltage
IT = ±8.4 A
IG = 50 mA
(see Note 5)
±1.7
Vsupply = +12 V†
IG = 0
Init’ ITM = 100 mA
30
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-30
Holding current
IL
Latching current
dv/dt(c)
MIN
RL = 10 Ω
IH
dv/dt
TEST CONDITIONS
Vsupply = +12 V†
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Vsupply = +12 V†
Vsupply = -12 V†
4
(see Note 6)
IG = 0
TC = 110°C
VDRM = Rated VDRM
ITRM = ±8.4 A
TC = 70°C
±2
V
V
mA
mA
-2
VDRM = Rated VDRM
UNIT
2.2
±20
V/µs
±5
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
2.5
°C/W
62.5
°C/W
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.