SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Symbol VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Value Ratings Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Unit A B D M S N 100 200 400 600 700 800 Page 1 of 3 V 6 A 60 A 70 A ±1 A 2.2 W 0.9 W -40 to +110 -40 to +125 °C °C 230 °C SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for a maximum averaging time of 20 ms. THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value Unit ≤ 2.5 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak offstate current IGT Gate trigger current VGT Gate trigger voltage IH Holding current Test Condition(s) VD = Rated VDRM, , IG = 0, TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - - ±2 - - 5 -5 -5 10 2.2 -2.2 -2.2 3 Vsupply = +12 V†, IG = 0, initiating ITM = 100 mA - - 30 Vsupply = -12 V†, IG = 0, initiating ITM = -100 mA - - -30 - 50 -20 - ±1.7 - ±50 - ±5 - - IL Latching current VTM Peak on-state voltage Critical rate of rise of off-state voltage Vsupply = +12 V† (seeNote7) Vsupply = -12 V† (seeNote7) ITM = ± 8.4 A, IG = 50 mA (see Note6) VDRM = Rated VDRM, IG = 0 TC = 110°C Critical rise of communication voltage VDRM = Rated VDRM, ITRM = ± 8.4A TC = 70°C dv/dt dv/dt© Min Typ Mx Unit † All voltages are whit respect to Main Terminal 1. Page 2 of 3 mA mA V mA mA V V/µs SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Note 6: This parameters must be measured using pulse techniques, tW = ≤1µs, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz. MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Page 3 of 3 Main Terminal 1 Main Terminal 2 Gate