TIC206 Series

TIC206 SERIES
SILICON TRIACS
●
Sensitive Gate Triacs
●
4 A RMS
●
Glass Passivated Wafer
MT1
1
●
400 V to 700 V Off-State Voltage
MT2
2
●
Max IGT of 5 mA (Quadrants 1 - 3)
G
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC206D
E
T
E
L
O
S
B
O
Repetitive peak off-state voltage (see Note 1)
TIC206M
VDRM
600
TIC206S
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
UNIT
400
V
700
IT(RMS)
4
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
ITSM
25
A
Peak gate current
IGM
±0.2
A
W
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
A
PGM
1.3
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
Repetitive peak
off-state current
TEST CONDITIONS
VD = rated VDRM
IG = 0
MIN
TYP
TC = 110°C
MAX
UNIT
±1
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
0.9
5
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-2.2
-5
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-1.8
-5
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
2.4
10
mA
† All voltages are with respect to Main Terminal 1.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC206 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
VGT
VT
TYP
MAX
0.7
2
tp(g) > 20 µs
-0.7
-2
tp(g) > 20 µs
-0.7
-2
tp(g) > 20 µs
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
voltage
Vsupply = -12 V†
RL = 10 Ω
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
0.7
2
On-state voltage
IT = ±4.2 A
IG = 50 mA
(see Note 5)
±1.4
±2.2
Vsupply = +12 V†
IG = 0
Init’ ITM = 100 mA
1.5
15
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-1.3
-15
Holding current
IL
Latching current
dv/dt(c)
MIN
RL = 10 Ω
IH
dv/dt
TEST CONDITIONS
Vsupply = +12 V†
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Vsupply = +12 V†
Vsupply = -12 V†
30
(see Note 6)
-30
VDRM = Rated VDRM
IG = 0
TC = 110°C
VDRM = Rated VDRM
ITRM = ±4.2 A
TC = 85°C
±1
UNIT
V
V
mA
mA
±20
V/µs
±3
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
7.8
°C/W
62.5
°C/W
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC206 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
+
+
tw(g) = 20 µs
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
+
+
10
1
-40
-20
0
Vsupply IGTM
VAA = ± 12 V
+
+
-
RL = 10 Ω
tw(g) = 20 µs
+
+
1
E
T
E
L
O
S
B
O
20
40
60
80
100
0·1
-60
120
-40
-20
TC - Case Temperature - °C
0
20
40
CASE TEMPERATURE
TC05AD
100
Vsupply IGTM
IG = 0
Initiating ITM = 100 mA
IL - Latching Current - mA
IH - Holding Current - mA
VAA = ± 12 V
1
Vsupply
+
-
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 3.
100
120
LATCHING CURRENT
vs
CASE TEMPERATURE
-40
80
Figure 2.
HOLDING CURRENT
vs
0·1
-60
60
TC - Case Temperature - °C
Figure 1.
10
TC05AB
10
VAA = ± 12 V
RL = 10 Ω
Vsupply IGTM
0·1
-60
TEMPERATURE
TC05AA
100
+
+
-
TC05AE
VAA = ± 12 V
+
+
10
1
0
-60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 4.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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