SR20100LCT

SR20100LCT,SRF20100LCT,SR20100LD1
R
LOW VF SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 100 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
TO-220AB
ITO-220AB
SR20100LCT
FEATURES
SRF20100LCT
JF
SR20100LCT
Power pack
Metal silicon junction ,majority carrier conduction
Pb
Guard ring for overvoltage protection
Low power loss ,high efficiency
RoHS
COMPLIANT
High current capability ,low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL Level 1，per J-STD-020,LF MAX peak of 245℃（for TO-263 package）
Solder bath temperature 275℃ maximum，10s，per JESD22-B106（for TO-220AB
and ITO-220AB package）
Component in accordance to RoHS 2011/65/EU
1
2
JF
SRF20100LCT
2
1
3
Pin1
Pin2
Pin1
Pin3
CA S E
Pin3
3
Pin2
TO-263
K
SR
2 0 JF
10
0L
D1
SR20100LD1
2
MECHANICAL DATA
1
Case: JEDEC TO-220AB、ITO-220AB、TO-263
Pin1
Molding compound meets UL94V-0 flammability rating
Pin2
K
HEATSINK
Terminals: Lead solderable per J-STD-002 and JESD22-B102
Polarity: As marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-Ibs maximum
IF(AV)
TYPICAL APPLICATIONS
For use in low voltage ,high frequency inverters ,DC/DC
converters,free wheeling ,and polarity protection applications
2×10A
VRRM
100V
IFSM
200A
VF at IF=10.0A(125℃）
20μA
IR
TJ(MAX)
150℃
TO-220AB,ITO-220AB,
TO-263
Package
Diode variations
MAXIMUM RATINGS
0.63V
Common cathode
(Ratings at 25℃ ambient temperature unless otherwise specified )
Symbol
Parameter
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(see fig.1)
VRRM
Per leg
IF(AV)
Total device
SR20100LCT, SRF20100LCT,SR20100LD1
100
Unit
V
10.0
A
20.0
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method at rated TL)
IFSM
200
A
Peak repetitive reverse current per diode at tp=2μs 1KHz
I RRM
0.5
A
Operating junction and Storage temperature range
Isolation voltage(ITO-220AB only)from terminals to
heatsink t=1 min
JINAN JINGHENG ELECTRONICS CO., LTD.
4-1
TJ ,Tstg
-55 to+150
℃
V AC
1500
V
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC OF SR20100L,SRF20100LCT,SR20100LD1
ELECTRICAL CHARACTERISTCS（TA=25℃ Unless otherwise noted)
Test Conditions
Parameter
T A =25℃
T A =100℃
T A =125℃
T A =25℃
T A =100℃
T A =125℃
Per leg
IF=10.0A
Instaneous forward voltage
Per leg
IF=5.0A
Symbol
TYP.
1)
0.66
0.64
0.63
0.53
0.51
0.50
VF
T A =25℃
T A =100℃
VR=100V
Reverse current
IR
2)
MAX.
Unit
0.70
V
0.57
-
20
50
2
5
10
20
μA
mA
T A =125℃
4V,1MHz
Typical junction capacitance
570
CJ
pF
Notes: 1.Pulse test: 300 μs pulse width,1% duty cycle
2.Pulse test: pulse width≤40ms
THERMAL CHARACTERISTCS（TA=25℃ Unless otherwise noted)
Symbol
Parameter
Typical thermal resistance 3)
R
JC
SR20100LCT
SRF20100LCT
SR20100LD1
2.5
4.5
2.5
Unit
℃/W
3.Thermal resistance from junction to case
AVAILABALE PACK INFORMATION
Pack
Box Size L×W×H(mm)
Quantity(pcs/box)
SR20100LCT-TO-220AB
P/T
558×148×38
1000
565×225×170
5
SRF20100LCT-ITO-220AB
P/T
558×148×38
1000
565×225×170
5
SR20100LD1-TO-263
P/T
558×148×38
1000
565×225×170
5
Product code
JINAN JINGHENG ELECTRONICS CO., LTD.
4-2
Carton SizeL×W×H(mm) Quantity(box/carton)
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC OF SR20100L,SRF20100LCT,SR20100LD1
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
20.0
300
PEAK FORWARD SURGE
CURRENT(AMPERES)
SR20100LCT
SR20100LD1
16.0
12.0
RESISTIVE OR INDUCTIVE LOAD
8.0
SRF20100LCT
4.0
0
0
20
40
60
80
100
120
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
250
200
150
100
50
140 150
CASE TEMPERATURE ( ℃)
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
10
200
100
Per Diode
8
Per Diode
7
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT( AMPERES)
9
PULSE WIDTH=300μS
1% DUTY CYCLE
6
5
TJ=100℃
4
TJ=125℃
TJ=25℃
3
2
1
10
TJ=125℃
TJ=100℃
1
0.1
TJ=25℃
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.01
0.8
0
INSTANTANEOUS FORWARD VOLTAGE (V)
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
4000
Per Diode
1000
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
JINAN JINGHENG ELECTRONICS CO., LTD.
4-3
HTTP://WWW.JINGHENGGROUP.COM
PACKAGE OUTLINE DIMENSIONS
TO-220AB
0.161(4.10)
0.147(3.74)
DIA
0.410(10.41)
0.390(9.91)
ITO-220AB
0.185(4.70)
0.175(4.44)
0.055(1.39)
0.045(1.14)
0.114(2.90)
0.102(2.60)
0.410(10.41)
0.140(3.55)
0.390(9.91)
0.128(3.25)
DIA
0.187(4.75)
0.167(4.25)
0.130(3.31)
0.111(2.81)
0.283(7.20)
0.244(6.20)
0.111(2.83)
0.101(2.57)
0.272(6.90)
0.256(6.50)
1
PIN
2
3
1.161(29.50)
1.106(28.10)
0.159(4.05)
0.138(3.50)
0.114(2.90)
0.098(2.50)
1
0.560(14.22)
0.516(13.10)
0.053(1.34)
0.047(1.20)
PIN
2
3
1.161(29.5)
0.177(4.50)
0.102(2.60)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.551(14.00)
0.067(1.70)
0.059(1.50)
0.056(1.43)
0.043(1.10)
0.023(0.58)
0.014(0.35)
0.208(5.28)
0.110(2.80)
1.083(27.5)
0.138(3.50)
0.512(13.00)
0.029(0.73)
0.019(0.47)
0.104(2.64)
0.096(2.44)
0.192(4.88)
0.029(0.73)
0.019(0.47)
TO-263
0.420(10.67)
0.380(9.65)
0.190(4.83)
Suggested Pad Layout
0.160(4.06)
0.245(6.22)
MIN
0.055(1.40)
（TO-263）
0.045(1.14)
0.42(10.67)MIN
0.320(8.13)
1
K
2
0.639(16.22)
0.560(14.22)
0.053(1.34)
0.047(1.20)
0.131(3.32)
0.15(3.81)MIN
0.090(2.29)
0.095(2.41)
0.083(2.10)
0.639(16.22)
0.560(14.22)
0.066(1.68)
0.036(0.92)
0.360(9.14)
0.037(0.94)
0.027(0.69)
0.018(0.46)
0.134(3.40)
0.014(0.35)
0.08(1.032)MIN
0.095(2.41)
0.083(2.10)
0.105(2.67)
Dimensions in inches and (millimeters)
JINAN JINGHENG ELECTRONICS CO., LTD.
4-4
HTTP://WWW.JINGHENGGROUP.COM