PANASONIC MN66710

LSIs for DAB
MN66710
Full-Function DAB Receiver LSI
■ Overview
The MN66710 is a single-chip digital signal processing LSI for a DAB (digital audio broadcast) receiver, including
OFDM demodulation, service selection, error correction, and MPEG audio decoding. The MN66710 conforms to the
European DAB standard (ETS 300 401). Since the MN66710 includes an on-chip A/D converter for the IF signal input,
it can be directly input the 3.072 MHz center frequency analog IF signal output from the DAB high-frequency circuit.
A DAB receiver is implemented easily by combining MN66710 with a small number of additional components, in
particular, 4M DRAMs for working memory, audio D/A converters, microcontrollers, and etc.
■ Features
• The DAB signal-processing block is integrated on a single chip. (with external 4M DRAMs)
• Supports all of DAB modes I, II, III, and IV.
• Achieves a processing data rate of up to 1.536 Mbps.
• Up to 4 MSC sub-channels can be selected.
• MPEG audio decoder (Also supports LSF.)
• Supports the standard audio D/A converter interface.
• Digital audio output unit conforming EIAJ CP-1201 (External driver required.)
• RDI output and dedicated audio RDI input units (For high capacity mode only.)
• F-PAD and X-PAD extraction function
• AIC support function provided in hardware.
• Supports multiplex restructuring with no interruption of the audio signal.
• TII decoding function (basic mode)
• Low supply voltage: 3.3 V±0.3 V
• Low power: Under 500 mW
■ Applications
• DAB (digital audio broadcast) receivers
Publication date: November 2001
SDC00041BEM
1
MN66710
■ Block Diagram
RAD0 to RAD9
RDT0 to RDT3
ADVRT
ADIN
ADC
I/Q
Gen.
OFDM
De-Interleave
ADVRB
NRAMOE
NRRAS
NRCAS
NRAMWE
IQMOD
UEP/EEP
NULDET
FSYO
MCLK24
NRST
CTLLR
FERF3
DSP Core
(Sync/AFC/MPEG Dec.)
CTLDAT
CTLCLK
FDAT3
Timing
Gen.
Viterbi Dec.
FWFIC
AFC
CIR
I/F
FW1 to FW4
FD3EN
CIRSYN
DSPMON0 to
DSPMON6
DSPMNEN
RDIOUT
RDI I/F
MPUSYNC
SDAT
MPUTX
MPU I/F
Audio
I/F
SCLK
DAC I/F
MPUCLK
SLRCK
SMCK
NPADRDY
AUXDAT
TEST0 to TEST3
2
RDIIN
RDIU0 to RDIU5
MPUMOD
MPURX
FCLK3
DAI I/F
SDC00041BEM
DAOUT
MN66710
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
DSPMON1
DSPMON0
VSS3
RDT3
RDT2
RDT0
RDT1
NRAMWE
NRRAS
RAD9
NRCAS
NRAMOE
RAD8
RAD7
VDD2
VSS2
RAD0
RAD1
RAD2
RAD3
RAD6
■ Pin Arrangement
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
RAD5
RAD4
FDAT3
FERF3
FCLK3
FWFIC
FW1
FW2
FW3
FW4
FD3EN
VDD1
VSS1
RDIOUT
RDIU5
RDIU4
RDIU3
RDIIN
RDIU2
RDIU1
RDIU0
MPUSYNC
NPADRDY
MPUCLK
MPURX
MPUTX
MPUMOD
TEST0
TEST1
TEST2
TEST3
NRST
VSS0
VDD0
MCLK24
MCLKO
DAOUT
AUXDAT
SMCK
SLRCK
SCLK
SDAT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
DSPMON2
DSPMON3
DSPMON4
DSPMON5
DSPMON6
DSPMNEN
CIRSYN
CTLLR
CTLCLK
CTLDAT
VSS4
VDD3
FSYO
NULDET
AVSS
ADVRB
ADIN
ADVRT
AVDD
VREF
IQMOD
(TOP VIEW)
Note) Do not leave any of the VDD and VSS pins open.
Connect the TEST0 to TEST3 pin to VSS.
SDC00041BEM
3
MN66710
■ Pin Descriptions
Pin No.
Pin Name
I/O
Descriptions
1
MPUSYNC
O
Microcontroller operation reference signal
Timing signal with a 24 ms period
2
NPADRDY
O
PAD data ready signal
Indicates that the PAD register can be read
3
MPUCLK
I
Microcontroller interface data clock
4
MPURX
I
Microcontroller interface reception data
5
MPUTX
O
Microcontroller interface transmission data
6
MPUMOD
I
Microcontroller interface mode
7
TEST0
I
Test mode setup
Normally connect to VSS
8
TEST1
I
Test mode setup
Normally connect to VSS
9
TEST2
I
Test mode setup
Normally connect to VSS
10
TEST3
I
Test mode setup
Normally connect to VSS
11
NRST
I
Master reset input
The IC is reset when this input is set low
12
VSS0

Digital system ground
13
VDD0

Digital system power supply
14
MCLK24
I
Master clock input (24.576 MHz)
15
MCLKO
O
Master clock oscillator circuit output
16
DAOUT
O
SPDIF digital audio interface output
17
AUXDAT
I
Audio A/D converter serial data input
18
SMCK
O
Audio A/D and D/A converter master clock Outputs a 256 fs clock
19
SLRCK
O
Audio A/D and D/A converter left/right clock
20
SCLK
O
Audio A/D and D/A converter serial clock output
21
SDAT
O
Audio D/A converter serial data output Audio output D/A converter connection
22
RDIU0
O
Auxiliary outputs for RDI expansion
Normally left open
23
RDIU1
O
Auxiliary outputs for RDI expansion
Normally left open
24
RDIU2
O
Auxiliary outputs for RDI expansion
Normally left open
25
RDIIN
I
RDI input
RDI back channel (audio only)
26
RDIU3
O
Auxiliary outputs for RDI expansion
Normally left open
27
RDIU4
O
Auxiliary outputs for RDI expansion
Normally left open
28
RDIU5
I
Auxiliary inputs for RDI expansion
Normally connect to VSS
29
RDIOUT
O
RDI output
For high capacity mode only
30
VSS1

Digital system ground
31
VDD1

Digital system power supply
32
FD3EN
I
General-purpose data output enable
Output enable for FDAT3, FERF3, and FCLK3
33
FW4
O
General-purpose output window 4
Window for sub-channel 4
34
FW3
O
General-purpose output window 3
Window for sub-channel 3
35
FW2
O
General-purpose output window 2
Window for sub-channel 2
4
SDC00041BEM
Note
For use with a crystal oscillator element
Auxiliary input A/D converter connection
MN66710
■ Pin Descriptions (continued)
Pin No.
Pin Name
I/O
Descriptions
36
FW1
O
General-purpose output window 1
Window for sub-channel 1 (audio)
37
FWFIC
O
General-purpose output window 0
FIC window
38
FCLK3
O
General-purpose data output clock
1.536 MHz continuous clock
39
FERF3
O
General-purpose data output error flag Flag that indicates Viterbi-corrected bits
40
FDAT3
O
General-purpose data output data
41
RAD4
O
External DRAM address, bit 4
For connecting external DRAM
42
RAD5
O
External DRAM address, bit 5
For connecting external DRAM
43
RAD6
O
External DRAM address, bit 6
For connecting external DRAM
44
RAD3
O
External DRAM address, bit 3
For connecting external DRAM
45
RAD2
O
External DRAM address, bit 2
For connecting external DRAM
46
RAD1
O
External DRAM address, bit 1
For connecting external DRAM
47
RAD0
O
External DRAM address, bit 0
For connecting external DRAM
48
VSS2

Digital system ground
49
VDD2

Digital system power supply
50
RAD7
O
External DRAM address, bit 7
For connecting external DRAM
51
RAD8
O
External DRAM address, bit 8
For connecting external DRAM
52
NRAMOE
O
External DRAM output enable
For connecting external DRAM
53
NRCAS
O
External DRAM column address strobe For connecting external DRAM
54
RAD9
O
External DRAM address, bit 9
For connecting external DRAM
55
NRRAS
O
External DRAM row address strobe
For connecting external DRAM
56
NRAMWE
O
External DRAM write enable
For connecting external DRAM
57
RDT1
I/O
External DRAM data, bit 1
For connecting external DRAM
58
RDT0
I/O
External DRAM data, bit 0
For connecting external DRAM
59
RDT2
I/O
External DRAM data, bit 2
For connecting external DRAM
60
RDT3
I/O
External DRAM data, bit 3
For connecting external DRAM
61
VSS3

Digital system ground
62
DSPMON0
O
DSP monitor, bit 0
Normally left open
63
DSPMON1
O
DSP monitor, bit 1
Normally left open
64
DSPMON2
O
DSP monitor, bit 2
Normally left open
65
DSPMON3
O
DSP monitor, bit 3
Normally left open
66
DSPMON4
O
DSP monitor, bit 4
Normally left open
67
DSPMON5
O
DSP monitor, bit 5
Normally left open
68
DSPMON6
O
DSP monitor, bit 6
Normally left open
69
DSPMNEN
I
DSP monitor output enable
A low level disables DSP monitor output
70
CIRSYN
O
CIR display cycle signal
CIR monitor display trigger signal
71
CTLLR
O
AFC/CIR D/A converter left/right clock For AFC control and CIR monitor display
72
CTLCLK
O
AFC/CIR D/A converter clock
SDC00041BEM
Note
For AFC control and CIR monitor display
5
MN66710
■ Pin Descriptions (continued)
Pin No.
Pin Name
I/O
Descriptions
Note
73
CTLDAT
O
AFC/CIR D/A converter data
74
VSS4

Digital system ground
75
VDD3

Digital system power supply
76
FSYO
O
Frame sync signal output
77
NULDET
I
Null symbol detection signal input
78
AVSS

Analog system ground
79
ADVRB

A/D converter low side reference voltage
80
ADIN
I
81
ADVRT

A/D converter high side reference voltage
82
AVDD

Analog system power supply
83
VREF

Reference supply for 5 V input pads
84
IQMOD
I
For AFC control and CIR monitor display
A/D converter analog input
Digital IQ generation switching input
Normally connect to VDD
■ Electrical Characteristics
1. Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V
Parameter
Symbol
Rating
Unit
Supply voltage (digital)
VDD
− 0.3 to +4.6
V
Supply voltage (analog)
AVDD
− 0.3 to +4.6
V
*1
VREF5
− 0.3 to +5.7
V
VI
− 0.3 to VDD+0.3
V
5 V reference voltage
Input pin voltage (except for the type A and type B)
VI5
− 0.3 to +6.0
Input pin voltage (type B)
VI5
− 0.3 to VREF5+0.3
Output pin voltage (except for the type B)
VO
− 0.3 to VDD+0.3
Output pin voltage (type B)
VO5
− 0.3 to VREF5+0.3
Output current (type HL1)
IO
±3
mA
Output current (type HL2)
IO
±6
mA
Output current (type HL4)
IO
±12
mA
Output current (type HL8)
IO
±24
mA
Power dissipation
PD
1030
mW
Storage temperature
Tstg
−55 to +125
°C
Input pin voltage (type A)
6
SDC00041BEM
*2
V
*2
V
V
*2
V
MN66710
■ Electrical Characteristics (continued)
1. Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V (continued)
Note) 1. *1 : The power supply rise and fall sequences must meet the stipulations shown below.
VDD
0V
t3-5
t5-3
VREF5 0 V
The times t3-5 and t5-3 must be non-negative.
VDD and VREF5 should change smoothly.
*2 : If VDD ≤ 1.4 V: − 0.3 V to +4.6 V
2. Type A pins
: RDIU5, MPURX, RDIIN, MPUCLK, MPUMOD, NULDET
Type B pins
: RAD9, RDT0 to RDT3, FSYO, CTLLR, DAOUT, NRCAS, NRRAS, CIRSYN, CTLCLK, CTLDAT,
DSPMON0 to DSPMON6, NRAMOE, NRAMWE, DSPMNEN
Type HL1 pins : FW1 to FW4, FCLK3, FDAT3, FERF3, FWFIC, DSPMON0 to DSPMON6, DSPMNEN
Type HL2 pins : RDIU0 to RDIU4
Type HL4 pins : FSYO, SCLK, SDAT, SMCK, CTLLR, DAOUT, MPUTX, SLRCK, AUXDAT, CIRSYN, CTLCLK,
CTLDAT, RDIOUT, MPUSYNC, NPADRDY
Type HL8 pins : RAD0 to RAD9, RDT0 to RDT3, NRCAS, NRRAS, NRAMOE, NRAMWE
3. The absolute maximum ratings are limiting values under which the chip will not be destroyed. Operation is not
guaranteed within these ranges.
4. External power and ground levels must be connected directly to all of the VDD and VSS pins respectively.
5. Connect the MINTEST pin to ground.
6. When used in car audio equipment, insert bypass capacitors (recommended value: 0.1 µF) between VDD and VSS.
2. Recommended Operating Conditions at VSS = 0 V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Supply voltage (digital)
VDD
3.0
3.3
3.6
V
Supply voltage (analog)
AVDD
3.0
3.3
3.6
V
5 V reference voltage
VREF5
4.75
5.0
5.25
V
Ambient temperature
Ta
−30

85
°C
Input rise time
tr
0

100
ns
Input fall time
tf
0

100
ns
Oscillator frequency
fOSC1
24.576 MHz Xtal

24.576

MHz
Recommended external
capacitor value
CXI7
VDD = 3.3 V

47

pF
CXO7
Built-in feedback resistor

47

pF
XI
XO
CXI
CXO
Note) 1. Since the oscillator characteristics depend on the oscillator element itself, external capacitances, and other factors,
consult the manufacturer of the oscillator element to determine the circuit constants.
2. Apply 5 V to 5 V reference voltage if 5 V inputs are used. This has no steady-state current consumption.
Do not apply the 5 V if the 3.3 V is not being applied to the LSI.
3.3 V may be supplied to this pin if only a single 3.3 V power supply is used.
SDC00041BEM
7
MN66710
■ Electrical Characteristics (continued)
3. DC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C
Parameter
Operating supply current
Symbol
Conditions
Min
Typ
Max
Unit
IDDO
VI = VDD or VSS
f = 24.576 MHz
VDD = 3.3 V, outputs open

110
200
mA
Oscillator circuit: MCLK24, MCLKO
High-level input voltage
VIH
VDD × 0.8

VDD
V
Low-level input voltage
VIL
0

VDD × 0.2
V
Internal feedback resistor
Rf7
313
940
2820
kΩ
VI = VDD or VSS
VDD = 3.3 V
CMOS level input pins: FD3EN, TEST0, TEST1, TEST2, IQMOD
High-level input voltage
VIH
VDD × 0.8

VDD
V
Low-level input voltage
VIL
0

VDD × 0.2
V
Input leakage current
ILI


±5
µA

1.85
VDD × 0.8
V
VDD × 0.2
1.45



±5
µA
VI = VDD or VSS
CMOS level input pin with Schmitt trigger circuit: NRST
Input threshold voltage
VT+
VDD = 3.0 V to 3.6 V
VT−
Input leakage current
ILI
VI = VDD or VSS
CMOS level input pin with built-in pull-down resistor: TEST3
High-level input voltage
VIH
VDD × 0.85

VDD
V
Low-level input voltage
VIL
0

VDD × 0.15
V
Pull-down resistor
RIL
VI = VDD
10
30
90
kΩ
Input leakage current
ILI
VI = VSS


±10
µA
TTL level input pins: RDIU5, MPURX, RDIIN, MPUCLK, MPUMOD, NULDET
High-level input voltage
VIH
2.2

5.25
V
Low-level input voltage
VIL
0

0.6
V
Input leakage current
ILI


±10
µA
VI = 5.25 V or VSS
Push-pull output pins: FW1 to FW4, FCLK3, FDAT3, FERF3, FWFIC
High-level output voltage
VOH
IOH = −1.0 mA
VI = VDD or VSS
VDD − 0.5


V
Low-level output voltage
VOL
IOL = 1.0 mA
VI = VDD or VSS


0.4
V
Push-pull output pins: MPUTX, MPUSYNC, NPADRDY
8
High-level output voltage
VOH
IOH = −4.0 mA
VI = VDD or VSS
VDD − 0.5


V
Low-level output voltage
VOL
IOL = 4.0 mA
VI = VDD or VSS


0.4
V
SDC00041BEM
MN66710
■ Electrical Characteristics (continued)
3. DC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Push-pull output pins: RAD0 to RAD8
High-level output voltage
VOH
IOH = −8.0 mA
VI = VDD or VSS
VDD − 0.5


V
Low-level output voltage
VOL
IOL = 8.0 mA
VI = VDD or VSS


0.4
V
VDD × 0.8

VDD
V
CMOS level I/O pins: RDIU0 to RDIU4
High-level input voltage
VIH
Low-level input voltage
VIL
0

VDD × 0.2
V
High-level output voltage
VOH
IOH = −2.0 mA
VI = VDD or VSS
VDD − 0.5


V
Low-level output voltage
VOL
IOL = 2.0 mA
VI = VDD or VSS


0.4
V
Output leakage current
ILO
VO = High-impedance state
VI = VDD or VSS
VO = VDD or VSS


±5
µA
CMOS level I/O pins: SCLK, SDAT, SMCK, SLRCK, AUXDAT, RDIOUT
High-level input voltage
VIH
VDD × 0.8

VDD
V
Low-level input voltage
VIL
0

VDD × 0.2
V
High-level output voltage
VOH
IOH = −4.0 mA
VI = VDD or VSS
VDD − 0.5


V
Low-level output voltage
VOL
IOL = 4.0 mA
VI = VDD or VSS


0.4
V
Output leakage current
ILO
VO = High-impedance state
VI = VDD or VSS
VO = VDD or VSS


±5
µA
TTL level I/O pins: DSPMON0 to DSPMON6, DSPMNEN
High-level input voltage
VIH
2.2

VREF5
V
Low-level input voltage
VIL
0

0.6
V
High-level output voltage
VOH
IOH = −1.0 mA
VI = VDD or VSS
2.4


V
Low-level output voltage
VOL
IOL = 1.0 mA
VI = VDD or VSS


0.4
V
Output leakage current
ILO
VO = High-impedance state
VI = 5.25 V or VSS
VO = 5.25 V or VSS


±10
µA
SDC00041BEM
9
MN66710
■ Electrical Characteristics (continued)
3. DC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
TTL level I/O pins: FSYO, CTLLR, DAOUT, CIRSYN, CTLCLK, CTLDAT
High-level input voltage
VIH
2.2

VREF5
V
Low-level input voltage
VIL
0

0.6
V
High-level output voltage
VOH
IOH = −4.0 mA
VI = VDD or VSS
2.4


V
Low-level output voltage
VOL
IOL = 4.0 mA
VI = VDD or VSS


0.4
V
Output leakage current
ILO
VO = High-impedance state
VI = 5.25 V or VSS
VO = 5.25 V or VSS


±10
µA
TTL level I/O pins: RAD9, RDT0 to RDT3, NRCAS, NRRAS, NRAMOE, NRAMWE
High-level input voltage
VIH
2.2

VREF5
V
Low-level input voltage
VIL
0

0.6
V
High-level output voltage
VOH
IOH = −8.0 mA
VI = VDD or VSS
2.4


V
Low-level output voltage
VOL
IOL = 8.0 mA
VI = VDD or VSS


0.4
V
Output leakage current
ILO
VO = High-impedance state
VI = 5.25 V or VSS
VO = 5.25 V or VSS


±10
µA
4. AC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
36
40.69
45
ns
Clock input
MCLK24 clock period
tMCLK
See figure 1.
MCLK24 high-level period
tMCLKH
18


ns
MCLK24 low-level period
tMCLKL
15


ns
4×T


ns
Microcontroller interface
MPUCLK clock period
tMPUC
MPUCLK high-level period
tMPUCH
72


ns
MPUCLK low-level period
tMPUCL
60


ns
See figure 2.
Note) The symbol T in the table refers to the MCLK24 period, tMCLK.
10
SDC00041BEM
MN66710
■ Electrical Characteristics (continued)
4. AC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0


ns
Microcontroller interface (continued)
MPUMOD setup time
tMODS
See figure 3,4.
MPUMOD hold time
tMODH
2×T


ns
MPURX setup time
tRXS
0


ns
MPURX hold time
tRXH
2×T


ns
MPUTX delay time
tTXD


2×T
ns
Write disabled period 1
tWRNG1
6×T


ns
Write disabled period 2
tWRNG2
4×T 8×T

ns
Read disabled period
tRDNG
4×T 8×T

ns
DRAM interface
120


ns
tRP
37.5
40

ns
RAS pulse width
tRAS
75
80

ns
CAS pulse width
tCAS
17.5
20

ns
Row address setup time
tASR
10


ns
Row address hold time
tRAH
17.5


ns
Column address setup time
tASC
10


ns
Column address hold time
tCAH
17.5


ns
RAS/CAS delay time
tRCD
35

45
ns
RAS column address delay time
tRAD
17.5

25
ns
RAS hold time
tRSH
35


ns
CAS hold time
tCSH
60


ns
CAS/RAS precharge time
tCRP
37.5
40

ns
OE/data input delay time
tODD
20


ns
Write command setup time
tWCS
40


ns
Write command hold time
tWCH
15


ns
Data input setup time
tDS
12.5


ns
Data input hold time
tDH
17.5


ns
Fast page mode cycle time
tPC
40


ns
Fast page mode precharge time
tCP
15
17.5

ns
Random read/write cycle time
tRC
RAS precharge time
See figure 5.
Note) The symbol T in the table refers to the MCLK24 period, tMCLK.
SDC00041BEM
11
MN66710
■ Electrical Characteristics (continued)
4. AC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
7

32.5
ns
DRAM interface (continued)
Master clock/RAS delay time
t1
See figure 5.
Master clock/CAS delay time
t2
7

32.5
ns
Master clock/address delay time
t3
27.5

57.5
ns
Master clock/WE delay time
t4
7

32.5
ns
Master clock/data input delay time
t5
27.5

57.5
ns
Master clock/OE delay time
t6
7

30
ns
Data output setup time
t7
0


ns
Data output hold time
t8
20


ns
72
81.38

ns
Audio interface
SMCK clock period
tSMCK
See figure 6.
SMCK high-level period
tSMCKH
31


ns
SMCK low-level period
tSMCKL
31


ns

ns
SCLK period
tSCLK
See figure 7.
288 325.52
SCLK high-level period
tSCLKH
100


ns
SCLK low-level period
tSCLKL
100


ns
SCLK delay time
tSCLKD


41
ns
SDAT delay time
tSDATD


40
ns
SLRCK delay time
tSLRD


41
ns
AUXDAT setup time
tAUXS
8.5


ns

ns
General-purpose data outputs
FCLK3 clock period
tFCLK
FCLK3 high-level period
tFCLKH
200


ns
FCLK3 low-level period
tFCLKL
200


ns
FCLK3 delay time
tFCLKD


15.5
ns
FDAT3 delay time
tFDATD


21.5
ns
FERF3 delay time
tFERFD


21
ns
tFWD


18
ns
FWFIC and FW1:4 delay time
12
See figure 8.
SDC00041BEM
576 651.04
MN66710
■ Electrical Characteristics (continued)
4. AC Characteristics at VDD = 3.0 V to 3.6 V, VREF5 = 4.75 V to 5.25 V, VSS = 0.00 V, fTEST = 24.576 MHz,
Ta = −30°C to +85°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
576
651.04

ns
CIR/AFC Output Timing
CTLCLK clock period
tCCLK
See figure 9.
CTLCLK high-level period
tCCLKH
200


ns
CTLCLK low-level period
tCCLKL
200


ns
CIRSYN delay time
tCIRD


241
ns
CTLCLK delay time
tCCLKD


35
ns
CTLDAT delay time
tCDATD


35
ns
CTLLR delay time
tCLRD


37
ns
5. A/D Converter Characteristics at VDD = 3.30 V, VREF5 = 5.00 V, VSS = 0.00 V, Ta = 25°C
Parameter
Resolution
Nonlinearity error
Differential nonlinearity error
Symbol
Conditions
RES
Min
Typ
Max
Unit


8
bit
NLE1
fMSPCK = 24.576 MHz
VRT = 2.6 V, VRB = 0.6 V

±1.5
±2.0
LSB
DNLE1
fMSPCK = 24.576 MHz
VRT = 2.6 V, VRB = 0.6 V

±0.5
±1.5
LSB
tMCLK
tMCLKL
tMCLKH
MCLK24
Figure 1. Clock input
tMPUC
tMPUCH
tMPUCL
MPUCLK
Figure 2. Microcontroller interface (data clock)
SDC00041BEM
13
14
SDC00041BEM
MPUTX
MPURX
MPUMOD
MPUCLK
MPUTX
MPURX
MPUMOD
MPUCLK
tMODS
tMODS
b7
b7
unknown
b6
tRXH
tRXS
b6
tRXH
tRXS
tWRNG1
unknown
b7
b6
tRXS
tRXH
b0
b7
tTXD
b6
Figure 4. Microcontroller interface (data read time)
b0
tMODH
b0
Figure 3. Microcontroller interface (data write time)
b0
tMODH
tRDNG
tWRNG2
b7
b7
b6
b6
b0
MN66710
■ Electrical Characteristics (continued)
SDC00041BEM
MCLK24
NRAMOE
RDT3-RDT0
NRAMWE
RAD9-RAD0
NRCAS
NRRAS
t3
t1
row
t2
tRAD
tCSH
t7 t8
row
dataout
column
tRAS
tRC
tASR tRAH
tCRP
dataout
column
tRCD tRSH
tRP
Read cycle
t4
col.
tRSH
Figure 5. DRAM interface
t6
col.
tPC
datain datain datain datain
tODD
t5
col.
tDH tDS
col.
tWCS
row
tCAS
tCP
tCAH tASC
tRCD
tCSH
Fast page mode
early write cycle
tWCH
row
dataout
column
Read cycle
row
RAS only
refresh cycle
row
MN66710
■ Electrical Characteristics (continued)
15
MN66710
■ Electrical Characteristics (continued)
tSMCK
tSMCKH
tSMCKL
SMCK
Figure 6. Audio interface
MCLK24
tAUXS
AUXDAT
tSCLKD
tSCLK
tSCLKH
tSCLKL
SCLK
tSDATD
SDAT
tSLRD
SLRCK
Figure 7. Audio output timing
16
SDC00041BEM
MN66710
■ Electrical Characteristics (continued)
MCLK24
tFCLK
tFCLKD
tFCLKH
tFCLKL
FCLK3
tFDATD
FDAT3
tFERFD
FERF3
tFWD
FWFIC
FW1 to FW4
Figure 8. General-purpose data output
MCLK24
tCIRD
CIRSYN
tCCLKD
CTLCLK
tCCLK
tCCLKH
tCCLKL
tCDATD
CTLDAT
tCLRD
CTLLR
Figure 9. CIR/AFC output timing
SDC00041BEM
17
MN66710
■ Package Dimensions (Unit: mm)
• QFP084-P-1818E (Lead-free package)
22.90±0.20
18.00±0.10
43
63
42
84
22
Seating plane
18
0.15
SDC00041BEM
(2.45)
0.15±0.05
21
0.35±0.05
2.45±0.20
0.80
0.10±0.10
1
(1.00)
2.85 max.
18.00±0.10
22.90±0.20
(1.00)
64
1.30±0.20
0° to 10°
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR