SHD174511 SHD174511B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5277, REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Per Package - Max. 30 60 Units V A 860 A 27 mJ 1.3 A 0.7 -65 to +175 -65 to +175 C/W C C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition Max. Units 0.53 V @ 60A, Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.43 V @ 60A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 30V, Pulse, 6 mA TJ = 25 C (per leg) IR2 @VR = 30V, Pulse, 300 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 3300 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 30V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD174511 SHD174511B SENSITRON TECHNICAL DATA DATA SHEET 5277, REV. MECHANICAL DIMENSIONS: In Inches / mm SHD-3 HIGH PROFILE SHD-3B HIGH PROFILE PINOUT TABLE TYPE SINGLE RECTIFIER in a Surface Mount Package PIN 1 (Base) CATHODE PIN 2 ANODE ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD174511 SHD174511B SENSITRON TECHNICAL DATA DATA SHEET 5277, REV. - Typical Forw ard Characteristics Typical Rev erse Characteristics 10 3 10 2 Instantaneous Reverse Current - I 1 125 °C 100 °C 10 1 75 °C 10 0 50 °C 10 -1 25 °C 10 -2 125 °C 0 10 0 T 0.1 0.2 0.3 0.4 0.5 Forward Voltage Drop - V F (V) 0.6 Junction Capacitance - C 10 -1 0.0 10 20 Reverse Voltage - V 30 R 40 (V) Typical Junction Capacitance 25 °C (pF) Instantaneous Forward Current - I F (A) 150 °C 10 10 R (mA) 150 °C 2 3000 2700 2400 2100 1800 0 10 20 Reverse Voltage - V 30 R 40 (V) Vf Curves shown are for die only. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]