TC110 Datasheet

TC110
PFM/PWM Step-Up DC/DC Controller
Features
General Description
•
•
•
•
•
The TC110 is a step-up (Boost) switching controller
that furnishes output currents of up to 300mA while
delivering a typical efficiency of 84%. The TC110
normally operates in pulse width modulation mode
(PWM), but automatically switches to pulse frequency
modulation (PFM) at low output loads for greater
efficiency. Supply current draw for the 100kHz version
is typically only 50µA, and is reduced to less than
0.5µA when the SHDN input is brought low. Regulator
operation is suspended during shutdown. The TC110
accepts input voltages from 2.0V to 10.0V, with a
guaranteed start-up voltage of 0.9V.
Assured Start-up at 0.9V
50µA (Typ) Supply Current (fOSC = 100kHz)
300mA Output Current @ VIN ≥ 2.7V
0.5µA Shutdown Mode
100kHz and 300kHz Switching Frequency
Options
• Programmable Soft-Start
• 84% Typical Efficiency
• Small Package: 5-Pin SOT-23A
Applications
•
•
•
•
The TC110 is available in a small 5-Pin SOT-23A
package, occupies minimum board space and uses
small external components (the 300kHz version allows
for less than 5mm surface-mount magnetics).
Palmtops
Battery-Operated Systems
Positive LCD Bias Generators
Portable Communicators
Functional Block Diagram
Device Selection Table
+
Osc.
Freq.
(kHz)
Operating
Temp.
Range
5-Pin SOT-23A
100
-40°C to +85°C
5-Pin SOT-23A
100
-40°C to +85°C
Part
Number
Output
Voltage
(V)*
Package
TC110501ECT
5.0
TC110331ECT
3.3
Battery
3V
10µF
+
3.0
5-Pin SOT-23A
100
-40°C to +85°C
TC110503ECT
5.0
5-Pin SOT-23A
300
-40°C to +85°C
VOUT
5
+
4
GND
TC110
TC110333ECT
3.3
5-Pin SOT-23A
300
-40°C to +85°C
VOUT
TC110303ECT
3.0
5-Pin SOT-23A
300
-40°C to +85°C
1
*Other output voltages are available. Please contact
Microchip Technology Inc. for details.
D1
IN5817
Si9410DY
47µF
Tantalum
EXT
TC110301ECT
47µH
–
VDD
2
SHDN/SS
3
R
OFF ON
C
Package Type
*RC Optional
5-Pin SOT-23A
EXT
GND
5
4
3V to 5V Supply
TC110
1
VOUT
2
3
VDD SHDN/SS
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A
 2002 Microchip Technology Inc.
DS21355B-page 1
TC110
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Voltage on VDD, VOUT, SHDN Pins ........ -0.3V to +12V
EXT Output Current ................................... ±100mA pk
Voltage on EXT Pin ........................-0.3V to VDD +0.3V
Power Dissipation.............................................150mW
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -40°C to +125°C
TC110 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Note 1, VIN = 0.6 x VR, VDD = VOUT, TA = 25°C, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VDD
Operating Supply Voltage
2.0
—
10.0
V
Note 2
VSTART
Start-Up Supply Voltage
—
—
0.9
V
IOUT = 1mA
VHOLD-UP Oscillator Hold-Up Voltage
—
—
0.7
V
IOUT = 1mA
IDD
Boost Mode Supply Current
—
—
—
—
—
—
120
130
180
50
50
70
190
200
280
90
100
120
µA
VOUT = SHDN = (0.95 x VR ); fOSC = 300kHz; VR = 3.0V
VR = 3.3V
VR = 5.0V
fOSC = 100kHz; VR = 3.0V
VR = 3.3V
VR = 5.0V
ISTBY
Standby Supply Current
—
—
—
—
—
—
20
20
22
11
11
11
34
35
38
20
20
22
µA
VOUT = SHDN = (VR + 0.5V); fOSC = 300kHz; VR = 3.0V
VR = 3.3V
VR = 5.0V
fOSC = 100kHz; VR = 3.0V
VR = 3.3V
VR = 5.0V
ISHDN
Shutdown Supply Current
—
0.05
0.5
µA
SHDN = GND, VO = (VR x 0.95)
fOSC
Oscillator Frequency
255
85
300
100
345
115
kHz VOUT = SHDN = (0.95 x VR ); fOSC = 300kHz
fOSC = 100kHz
VOUT
Output Voltage
VR
x 0.975
VR
VR
x 1.025
V
Note 3
—
—
92
%
VOUT = SHDN = 0.95 x VR
DTYMAX Maximum Duty Cycle
(PWM Mode)
15
25
35
%
IOUT = 0mA
VIH
DTYPFM Duty Cycle (PFM Mode)
SHDN Input Logic High
0.65
—
—
V
VOUT = (VR x 0.95)
VIL
SHDN Input Logic Low
—
—
0.20
V
VOUT = (VR x 0.95)
REXTH
EXT ON Resistance to VDD
—
—
—
32
29
20
47
43
29
Ω
VOUT = SHDN = (VR x 0.95); VR = 3.0V
VR = 3.3V
VEXT = (VOUT – 0.4V)
VR = 5.0V
REXTL
EXT ON Resistance to GND
—
—
—
20
19
13
30
27
19
Ω
VOUT = SHDN = (VR x 0.95); VR = 3.0V
VR = 3.3V
VEXT = 0.4V
VR = 5.0V
Efficiency
—
84
—
%
η
Note
1:
2:
3:
VR = 3.0V, IOUT = 120mA
VR = 3.3V, IOUT = 130mA
VR = 5.0V, IOUT = 200mA
See Application Notes “Operating Mode” description for clarification.
VR is the factory output voltage setting.
DS21355B-page 2
 2002 Microchip Technology Inc.
TC110
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A)
Symbol
1
VOUT
Description
Internal device power and voltage sense input. This dual function input provides both feedback
voltage sensing and internal chip power. It should be connected to the regulator output. (See
Section 4.0, Applications).
2
VDD
3
SHDN/SS
4
GND
Ground terminal.
5
EXT
External switch transistor drive complimentary output. This pin drives the external switching
transistor. It may be connected to the base of the external bipolar transistor or gate of the external
N-channel MOSFET. (See Section 4.0, Applications).
 2002 Microchip Technology Inc.
Power supply voltage input.
Shutdown input. A logic low on this input suspends device operation and supply current is
reduced to less than 0.5µA. The device resumes normal operation when SHDN is again brought
high. An RC circuit connected to this input also determines the soft-start time.
DS21355B-page 3
TC110
3.0
DETAILED DESCRIPTION
The TC110 is a PFM/PWM step-up DC/DC controller
for use in systems operating from two or more cells, or
in low voltage, line-powered applications. It uses PWM
as the primary modulation scheme, but automatically
converts to PFM at output duty cycles less than
approximately 25%. The conversion to PFM provides
reduced supply current, and therefore higher operating
efficiency at low loads. The TC110 uses an external
switching transistor, allowing construction of switching
regulators with maximum output currents of 300mA.
The TC110 consumes only 70µA, typical, of supply
current and can be placed in a 0.5µA shutdown mode
by bringing the shutdown input (SHDN) low. The
regulator remains disabled while in shutdown mode,
and normal operation resumes when SHDN is brought
high. Other features include start-up at VIN = 0.9V and
an externally programmable soft start time.
3.1
Operating Mode
The TC110 is powered by the voltage present on the
VDD input. The applications circuits of Figure 3-1 and
Figure 3-2 show operation in the bootstrapped and
non-bootstrapped modes. In bootstrapped mode, the
TC110 is powered from the output (start-up voltage is
supplied by VIN through the inductor and Schottky
diode while Q1 is off). In bootstrapped mode, the
switching transistor is turned on harder because its
gate voltage is higher (due to the boost action of the
regulator), resulting in higher output current capacity.
3.2
Low Power Shutdown Mode
The TC110 enters a low power shutdown mode when
SHDN is brought low. While in shutdown, the oscillator
is disabled and the output switch (internal or external)
is shut off. Normal regulator operation resumes when
SHDN is brought high. SHDN may be tied to the input
supply if not used.
Note:
3.3
Because the TC110 uses an external diode,
a leakage path between the input voltage
and the output node (through the inductor
and diode) exists while the regulator is in
shutdown. Care must be taken in system
design to assure the input supply is isolated
from the load during shutdown.
Soft Start
Soft start allows the output voltage to gradually ramp
from 0V to rated output value during start-up. This
action minimizes (or eliminates) overshoot, and in
general, reduces stress on circuit components.
Figure 3-3 shows the circuit required to implement soft
start (values of 470K and 0.1µF for R SS and CSS,
respectively, are adequate for most applications).
3.4
Input Bypass Capacitors
Using an input bypass capacitor reduces peak current
transients drawn from the input supply and reduces the
switching noise generated by the regulator. The source
impedance of the input supply determines the size of
the capacitor that should be used.
The TC110 is powered from the input supply in the nonbootstrapped mode. In this mode, the supply current to
the TC110 is minimized. However, the drive applied to
the gate of the switching transistor swings from the
input supply level to ground, so the transistor’s ON
resistance increases at low input voltages. Overall
efficiency is increased since supply current is reduced,
and less energy is consumed charging and discharging
the gate of the MOSFET. While the TC110 is guaranteed to start up at 0.9V the device performs to
specifications at 2.0V and higher.
DS21355B-page 4
 2002 Microchip Technology Inc.
TC110
FIGURE 3-1:
BOOTSTRAPPED OPERATION
L1
100µH
D1
IN5817
VOUT
n
MTP3055EL C2
47µF
5
4
EXT
GND
TC110XX
VOUT
C1
33µF
VDD
1
SHDN
2
3
+
–
FIGURE 3-2:
OFF ON
VIN
NON-BOOTSTRAPPED OPERATION
L1
100µH
D1
IN5817
VOUT
n
MTP3055EL
C2
47µF
5
4
EXT
GND
TC110XX
VOUT
VDD
1
2
SHDN
3
OFF ON
+
–
FIGURE 3-3:
C1
33µF
VIN
SOFT START/SHUTDOWN CIRCUIT
TC110XX
TC110XX
SHDN/SS
SHDN/SS
3
3
RSS
470K
RSS
470K
VIN
SHDN
CSS
0.1µF
Shutdown Not Used
 2002 Microchip Technology Inc.
CSS
0.1µF
Shutdown Used
DS21355B-page 5
TC110
3.5
Output Capacitor
The effective series resistance of the output capacitor
directly affects the amplitude of the output voltage
ripple. (The product of the peak inductor current and
the ESR determines output ripple amplitude.) Therefore, a capacitor with the lowest possible ESR should
be selected. Smaller capacitors are acceptable for light
loads or in applications where ripple is not a concern.
The Sprague 595D series of tantalum capacitors are
among the smallest of all low ESR surface mount
capacitors available. Table 4-1 lists suggested
components and suppliers.
3.6
Inductor Selection
Selecting the proper inductor value is a trade-off
between physical size and power conversion requirements. Lower value inductors cost less, but result in
higher ripple current and core losses. They are also
more prone to saturate since the coil current ramps
faster and could overshoot the desired peak value. This
not only reduces efficiency, but could also cause the
current rating of the external components to be
exceeded. Larger inductor values reduce both ripple
current and core losses, but are larger in physical size
and tend to increase the start-up time slightly.
A 22µH inductor is recommended for the 300kHz
versions and a 47µH inductor is recommended for the
100kHz versions. Inductors with a ferrite core (or
equivalent) are also recommended. For highest
efficiency, use inductors with a low DC resistance (less
than 20 mΩ).
The inductor value directly affects the output ripple
voltage. Equation 3-3 is derived as shown below, and
can be used to calculate an inductor value, given the
required output ripple voltage and output capacitor
series resistance:
Care must be taken to ensure the inductor can handle
peak switching currents, which can be several times
load currents. Exceeding rated peak current will result
in core saturation and loss of inductance. The inductor
should be selected to withstand currents greater than
IPK (Equation 3-10) without saturating.
Calculating the peak inductor current is straightforward.
Inductor current consists of an AC (sawtooth) current
centered on an average DC current (i.e., input current).
Equation 3-6 calculates the average DC current. Note
that minimum input voltage and maximum load current
values should be used:
EQUATION 3-4:
Input Power =
Output Power
Efficiency
Re-writing in terms of input and output currents and
voltages:
EQUATION 3-5:
(VINMIN) (IINMAX) =
(VOUTMAX) (IOUTMAX)
Efficiency
Solving for input curent:
EQUATION 3-6:
IINMAX =
(VOUTMAX)(IOUTMAX)
(Efficiency)(VINMAX)
The sawtooth current is centered on the DC current
level; swinging equally above and below the DC current
calculated in Equation 3-6. The peak inductor current is
the sum of the DC current plus half the AC current.
Note that minimum input voltage should be used when
calculating the AC inductor current (Equation 3-9).
EQUATION 3-7:
EQUATION 3-1:
V =
L(di)
dt
di =
V(dt)
dt
VRIPPLE ≈ ESR(di)
EQUATION 3-8:
where ESR is the equivalent series resistance of the
output filter capacitor, and VRIPPLE is in volts.
Expressing di in terms of switch ON resistance and
time:
EQUATION 3-9:
EQUATION 3-2:
ESR [(VIN – VSW)tON]
VRIPPLE ≈
L
Solving for L:
EQUATION 3-3:
L
≈
ESR [(VIN – VSW)tON]
VRIPPLE
di =
[(VINMIN – VSW)tON]
L
where: VSW = VCESAT of the switch (note if a CMOS
switch is used substitute V CESAT for rDSON x IIN)
Combining the DC current calculated in Equation 3-6,
with half the peak AC current calculated in Equation 39, the peak inductor current is given by:
EQUATION 3-10:
IPK = IINMAX + 0.5(di)
DS21355B-page 6
 2002 Microchip Technology Inc.
TC110
3.7
Output Diode
For best results, use a Schottky diode such as the
MA735, 1N5817, MBR0520L or equivalent. Connect
the diode between the FB (or SENSE) input as close to
the IC as possible. Do not use ordinary rectifier diodes
since the higher threshold voltages reduce efficiency.
3.8
External Switching Transistor
Selection
The EXT output is designed to directly drive an
N-channel MOSFET or NPN bipolar transistor. Nchannel MOSFETs afford the highest efficiency
because they do not draw continuous gate drive
current, but are typically more expensive than bipolar
transistors. If using an N-channel MOSFET, the gate
should be connected directly to the EXT output as
shown in Figure 3-1 and Figure 3-1. EXT is a complimentary output with a maximum ON resistances of 43Ω
to VDD when high and 27Ω to ground when low. Peak
currents should be kept below 10mA.
When selecting an N-channel MOSFET, there are three
important parameters to consider: total gate charge
(Qg); ON resistance (rDSON) and reverse transfer
capacitance (CRSS). Qg is a measure of the total gate
capacitance that will ultimately load the EXT output.
Too high a Qg can reduce the slew rate of the EXT
output sufficiently to grossly lower operating efficiency.
Transistors with typical Qg data sheet values of 50nC
or less can be used. For example, the Si9410DY has a
Qg (typ) of 17nC @ VGS = 5V. This equates to a gate
current of:
The two most significant losses in the N-channel
MOSFET are switching loss and I2R loss. To minimize
these, a transistor with low rDSON and low CRSS should
be used.
Bipolar NPN transistors can be used, but care must be
taken when determining base current drive. Too little
current will not fully turn the transistor on, and result in
unstable regulator operation and low efficiency. Too
high a base drive causes excessive power dissipation
in the transistor and increase switching time due to
over-saturation. For peak efficiency, make RB as large
as possible, but still guaranteeing the switching transistor is completely saturated when the minimum value of
hFE is used.
3.9
Board Layout Guidelines
As with all inductive switching regulators, the TC110
generates fast switching waveforms which radiate
noise. Interconnecting lead lengths should be minimized to keep stray capacitance, trace resistance and
radiated noise as low as possible. In addition, the GND
pin, input bypass capacitor and output filter capacitor
ground leads should be connected to a single point.
The input capacitor should be placed as close to power
and ground pins of the TC110 as possible.
IGATEMAX = fMAX x Qg = 115kHz x 17nC = 2mA
 2002 Microchip Technology Inc.
DS21355B-page 7
TC110
4.0
APPLICATIONS
4.1
Circuit Examples
Figure 4-1 shows a TC110 operating as a 100kHz
bootstrapped regulator with soft start. This circuit uses
an NPN switching transistor (Zetex FZT690B) that has
an hFE of 400 and V CESAT of 100 mV at IC = 1A. Other
high beta transistors can be used, but the values of R B
and CB may need adjustment if hFE is significantly
different from that of the FZT690B.
TABLE 4-1:
Type
Surface Mount
SUGGESTED COMPONENTS AND SUPPLIERS
Inductors
Sumida
CD54 Series (300kHz)
CD75 (100kHz)
Coiltronics
CTX Series
Through-Hole
Sumida
RCH855 Series
RCH110 Series
Renco
RL1284-12
DS21355B-page 8
Figure 4-2 and Figure 4-3 both utilize an N-channel
switching transistor (Silconix Si9410DY). This transistor
is a member of the LittlefootTM family of small outline
MOSFETs. The circuit of Figure 4-2 operates in
bootstrapped mode, while the circuit of Figure 4-3
operates in non-bootstrapped mode.
Capacitors
Diodes
Matsuo
267 Series
Nihon
EC10 Series
Sprague
595D Series
Matsushita
MA735 Series
Transistors
N-channel
Silconix
Si9410DY
ON Semiconductor
MTP3055EL
MTD20N03
Nichicon
F93 Series
Sanyo
OS-CON Series
Nichicon
PL Series
ON Semiconductor
1N5817 - 1N5822
NPN
Zetex
ZTX694B
 2002 Microchip Technology Inc.
TC110
FIGURE 4-1:
100kHz BOOTSTRAPPED REGULATOR WITH SOFT START USING
A BIPOLAR TRANSISTOR
VIN
CIN
10µF/16V
L1
47µH
Sumida CD75
D1
Matsushita
MA737
CB
10nF
Ceramic
VOUT
Q1
FZT690BCT
RB
1K
5
COUT
47µF, 10V
Tant.
4
EXT
GND
TC110301
TC110301
VOUT
VDD SHDN/SS
1
2
3
CSS
0.1µF
Ceramic
RSS
470K
SHUTDOWN
(Optional)
FIGURE 4-2:
300kHz BOOTSTRAPPED, N-CHANNEL TRANSISTOR
VIN
CIN
10µF/16V
D1
ON Semiconductor
MBR0520L
L1
22µH
Sumida CD54
VOUT
Q1
Silconix
Si9410DY
5
4
EXT
GND
COUT
47µF, 16V
Tant.
TC110303
FIGURE 4-3:
VOUT
VDD
SHDN/SS
1
2
3
300kHz NON-BOOTSTRAPPED, N-CHANNEL TRANSISTOR
VIN
CIN
10µF/16V
D1
ON Semiconductor
MBR0520L
L1
22µH
Sumida CD54
VOUT
Q1
Silconix
Si9410DY
5
4
EXT
GND
COUT
47µF, 16V
Tant.
TC110303
 2002 Microchip Technology Inc.
VOUT
VDD
SHDN/SS
1
2
3
DS21355B-page 9
TC110
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Output Voltage vs. Output Current
TC110 (300kHz, 3.3V)
Efficiency vs. Output Current
TC110 (300kHz, 3.3V)
L = 22µH, CL = 94µF (Tantalum)
L = 22µH, CL = 94µF (Tantalum)
100
80 2.7V
3.4
1.2V
1.8V
3.3
VIN = 0.9V
3.2
1.5V 2.0V
2.7V
3.1
1.2V
60
1.5V
2.0V
1.8V
40
20
VIN = 0.9V
3.0
0.1
1
10
100
OUTPUT CURRENT IOUT (mA)
DS21355B-page 10
EFFICIENCY (%)
OUTPUT VOLTAGE (VOUT) (V)
3.5
1000
0
0.1
1
10
100
1000
OUTPUT CURRENT IOUT (mA)
 2002 Microchip Technology Inc.
TC110
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
1
represents product classification; TC110 = M
2
represents first integer of voltage and frequency
3
4
Symbol
(100kHz)
Symbol
(300kHz)
Voltage
B
C
D
E
F
H
1
2
3
4
5
6
1.
2.
3.
4.
5.
6.
represents first decimal of voltage and frequency
Symbol
(100kHz)
Symbol
(300kHz)
Voltage
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
H
K
L
M
.0
.1
.2
.3
.4
.5
.6
.7
.8
.9
represents production lot ID code
 2002 Microchip Technology Inc.
DS21355B-page 11
TC110
6.2
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in
5-Pin SOT-23A
6.3
Package Dimensions
SOT-23A-5
.075 (1.90)
REF.
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.010 (0.25)
.004 (0.09)
10° MAX.
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21355B-page 12
 2002 Microchip Technology Inc.
TC110
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
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Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21355B-page13
TC110
NOTES:
DS21355B-page14
 2002 Microchip Technology Inc.
TC110
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21355B-page 15
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Japan
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
China - Hong Kong SAR
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
DS21355B-page 16
 2002 Microchip Technology Inc.