LC5555LD, LC5556LD Application Note

Application Information
LC5550LD Series PWM and Quasi-Resonant
Off-Line Switching Regulator ICs
General Description
LC5550LD series is a PWM and quasi-resonant topology
non-isolated buck LED driver IC. It incorporates separate
controller and power MOSFET chips, and is designed for
input capacitorless applications. The controller adapts the
average current control method for realizing high power
factors. The rich set of protection features helps to realize
low component counts, and high performance-to-cost power
supply.
Features and Benefits
Figure 1. The LC5550LD series package is a fully molded DIP8, with
pin 7 removed for greater isolation. (Image not to scale.)
• PWM and quasi-resonant topology
• Integrated on-time control circuit (it realizes high power
factor by average current control)
• Integrated soft-start circuit (reduces power stress during
start-up on the incorporated power MOSFET and output
rectifier)
• Integrated bias assist circuit (improves startup
performance, suppresses VCC voltage droop during
operation, and allows use of low-rated ceramic capacitor
on VCC pin)
• Integrated Leading Edge Blanking (LEB) circuit
• Integrated maximum on-time limit circuit
• Protection features:
▫ Overcurrent protection (OCP): pulse-by-pulse
▫ Overvoltage protection (OVP): latched shutdown
▫ Overload protection (OLP): latched shutdown
▫ Thermal shutdown (TSD): latched shutdown
Applications
• LED lighting fixtures
• LED light bulbs
The product lineup for the LC5550LD series provides the following options:
POUT*
(W)
Part
Number
MOSFET
VDSS(min)
(V)
RDS(on)
(max)
(Ω)
PWM Operation
Frequency, fOSC(typ)
(kHz)
On-Time
tON(MAX)(typ)
(μs)
230 VAC
Universal
LC5555LD
650
3.95
72
9.3
13
10
LC5556LD
650
1.9
60
11.2
20
16
*Based on the thermal rating; the allowable maximum output power can be up to 120% to 140% of
this value. However, maximum output power may be limited in such an application with low output
voltage or short duty cycle.
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
Functional Block Diagram
VCC
②
Control Part
⑧ D/ST
START UP
TSD
UVLO
Reg
Drv
Bias
OVP
① S/GND
S
RQ
OCP/BD ③
⑥ ISENSE
Bottom
Detection
OCP
OSC
OLP
OTA
LEB
Reg
Feedback
Control
NF ⑤
④ COMP
Reg
Pin List Table
Number
Name
1
S/GND
2
VCC
8 D/ST
3
OCP/BD
6 ISENSE
4
COMP
5
NF
6
ISENSE
7
–
8
D/ST
Pin-out Diagram
S/GND 1
VCC 2
OCP/BD 3
5 NF
COMP 4
Function
MOSFET source and GND pin for the Control Part
Supply voltage input and Overvoltage Protection (OVP) signal input
Overcurrent Protection (OCP), quasi-resonant signal input, and
Overvoltage Protection (OVP) signal input
Feedback phase-compensation input
No function; must be externally connected to S/GND pin with as short a
trace as possible, for stable operation of the IC
Output current sensing voltage input
Pin removed
MOSFET drain pin and input of the startup current
Table of Contents
General Specifications
1
Package Diagram
Electrical Characteristics
Typical Application Circuits
3
4
6
Functional Description
7
Startup Operation
Startup Period
Undervoltage Lockout (UVLO) Circuit
Bias Assist Function
Soft Start Function
Operational Mode at Startup
Normal Operation
On-Time Control Operation
PWM Control
7
7
7
8
9
9
10
10
11
Quasi-Resonant Operation
Bottom-On Timing
Protection Functions
Overvoltage Protection (OVP)
VCC Pin Overvoltage Protection
OCP/BD Pin Overvoltage Protection
Overload Protection (OLP)
Overcurrent Protection (OCP)
Thermal Shutdown Protection
Maximum On-Time Limiting Function
Design Considerations
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
12
13
14
14
14
15
16
17
17
18
18
2
Package Diagram
DIP8 package
9.4 ±0.3
5
1
4
6.5 ±0.2
8
1.0 +0.3
-0.05
+0.3
1.52
-0.05
3.3 ±0.2
7.5 ±0.5
4.2 ±0.3
3.4 ±0.1
(7.6 TYP)
0.2 5 + 0.
- 0.01
5
0~15° 0~15°
2.54 TYP
0.89 TYP
0.5 ±0.1
Unit: mm
8
LC555x
SK YMD L
Part Number
Lot Number
Y is the last digit of the year (0 to 9)
M is the month (1 to 9, O, N, or D)
D is a period of days (1 to 3):
1 – 1st to 10th
2 – 11th to 20th
3 – 21st to 31st
Sanken Control Number
1
Pb-free. Device composition compliant
with the RoHS directive.
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
3
Electrical Characteristics
• This section provides electrical characteristic data for each product.
• The polarity value for current specifies a sink as "+ ," and a source as “−,” referencing the IC.
• Please refer to the datasheet of each product for additional details.
Absolute Maximum Ratings Unless specifically noted, TA is 25°C
Characteristic
Drain Current
Symbol
IDPEAK
Notes
Pins
Rating
Unit
A
LC5555LD
Single pulse
8–1
2.5
LC5556LD
Single pulse
8–1
4.0
A
LC5555LD
ILPEAK = 2.0 A, VDD = 99 V, L = 20 mH
8–1
47
mJ
LC5556LD
ILPEAK = 2.7 A, VDD = 99 V, L = 20 mH
Single Pulse Avalanche Energy
EAS
8–1
86
mJ
Input Voltage for Control Part (MIC)
VCC
2–1
35
V
OCP/BD Pin Voltage
VOCP
3–1
−2.0 to 5.0
V
COMP Pin Voltage
VCOMP
4–1
−0.3 to 7.0
V
ISENSE Pin Voltage
VSEN
6–1
−0.3 to 5.0
V
Allowable Power Dissipation of
MOSFET
PD1
8–1
0.97
W
Operating Ambient Temperature
TOP
―
−55 to 125
°C
Storage Temperature
Tstg
―
−55 to 125
°C
Channel Temperature
Tch
―
150
°C
Mounted on a 15 mm × 15 mm PCB
LC5550LD Electrical Characteristics of MOSFET Unless specifically noted, TA is 25°C
Characteristic
Symbol
Test Conditions
Pins
Min.
Typ.
Max.
Unit
Drain-to-Source Breakdown Voltage
VDSS
8–1
650
―
―
V
Drain Leakage Current
IDSS
8–1
―
―
300
μA
―
―
3.95
Ω
―
―
1.9
Ω
On-Resistance
RDS(on)
Switching Time
tf
Thermal Resistance*
Rθch-c
LC5555LD
LC5556LD
LC5555LD
LC5556LD
LC5555LD
LC5556LD
8–1
8–1
―
―
―
250
ns
―
―
400
ns
―
―
42
°C/W
―
―
35.5
°C/W
*The thermal resistance between the channels of the MOSFET and the case. TC measured at the center of the case top surface.
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
4
Electrical Characteristics of Control Part (MIC) Unless specifically noted, TA is 25°C, VCC is 20 V
Characteristic
Symbol
Test Conditions
Pins
Min.
Typ.
Max.
Unit
Power Supply Startup Operation
Operation Start Voltage
VCC(ON)
2–1
13.8
15.1
17.3
V
Operation Stop Voltage*
VCC(OFF)
2–1
8.4
9.4
10.7
V
ICC(ON)
2–1
–
–
4.7
mA
VSTARTUP
8–1
18
21
24
V
2–1
−8.5
−4.0
−1.5
mA
2–1
9.5
11.0
12.5
V
60
72
84
kHz
Circuit Current in Operation
Startup Circuit Operation Voltage
Startup Current
Startup Current Threshold Biasing
Voltage*
ICC(STARTUP) VCC = 13 V
VCC(BIAS)
Normal Operation
PWM Operation Frequency
Maximum On-Time
COMP Pin Control Minimum Voltage
Error Amplifier Reference Voltage
LC5555LD
fOSC
LC5556LD
LC5555LD
tON(MAX)
LC5556LD
8–1
8–1
50
60
70
kHz
8.0
9.3
11.2
μs
9.0
11.2
13.4
μs
VCOMP(MIN)
4–1
0.30
0.55
0.80
V
VSEN(TH)
6–1
–0.21
–0.2
–0.19
V
ISEN(SOURCE)
4–1
−36
−24
−12
μA
Error Amplifier Sink Current
ISEN(SINK)
4–1
12
24
36
μA
Error Amplifier Source Current
Leading Edge Blanking Time
tON(LEB)
3–1
−
600
−
ns
Quasi-Resonant Operation Threshold
Voltage-1
VBD(TH1)
3–1
0.14
0.24
0.34
V
Quasi-Resonant Operation Threshold
Voltage-2
VBD(TH2)
3–1
0.11
0.16
0.21
V
VOCP(TH)
3–1
−0.92
−0.8
−0.68
V
IOCP
3–1
−120
−40
−10
μA
OCP/BD Pin Overvoltage Protection
(OVP) Operation Voltage
VBD(OVP)
3–1
2.2
2.6
3.0
V
Overload Protection (OLP) Threshold
Voltage
VCOMP(OLP)
4–1
4.1
4.5
4.9
V
VCC(OVP)
2–1
28.5
31.5
34.0
V
TJ(TSD)
–
135
–
–
°C
Protected Operation
OCP/BD Pin Overcurrent Protection
(OCP) Threshold Voltage
OCP/BD Pin Source Current
VCC Pin OVP Threshold Voltage
Thermal Shutdown Activating
Temperature
*VCC(BIAS) > VCC(OFF) always.
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
5
Typical Application Circuits
The LC5550LD series is a non-isolated buck LED driver IC
which can be used with both PWM control and quasi-resonant
control. Figure 1 shows a circuit example with PWM control.
Details are described in the PWM Operation section.
D8, R7, and C8 in the figure) is added to PWM circuit. When
the output voltage rises, the OCP/BD pin voltage will also rise,
and when the quasi-resonant signal of the positive voltage on
the OCP/BD pin reaches VBD(TH1) = 0.24 V or more, the quasiresonant operation will begin. Details are described in the QuasiResonant Operation section.
Figure 2 shows a circuit example with quasi-resonant control.
In a quasi-resonant circuit configuration, a delay circuit (D7,
R1
D6
R2
U1
NF
5
LC5550LD
Contro1
6
ISENSE
D3
D4
D/ST
8
V AC
COMP
4
3 OCP/BD
2
1
VCC
C3
S/GND
C4
C5
R5
C6
C2
R3
D2
D1
L1
R4
CV
C1
C7
R6
LED
D5
Figure 1. Typical application circuit 1, PWM control
R1
D6
R2
U1
5
6
ISENSE
D3
D4
D1
D2
LC5550LD
Contro1
NF
D/ST
8
V AC
COMP
4
D7
3 OCP/BD
2
1
VCC
C3
S/GND
C4
C5
R5
C6
C8
C2
R3
C1
R7
D8
R4
L1
CV
C7
R6
LED
D5
Figure 2. Typical application circuit 2, Quasi-resonant control
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
6
Functional Description
All of the parameter values used in these descriptions are typical
values, according to the LC5555LD specification, unless they are
specified as minimum or maximum.
With regard to current direction, "+" indicates sink current
(toward the IC) and "–" indicates source current (from the IC).
Startup Operation
Startup Period
Figure 3 shows the VCC pin peripheral circuit. The VCC pin voltage can be supplied from VO in buck-converter configuration. The
built-in startup circuit is connected to the D/ST pin, and it generates a constant current, ICC(STARTUP) = –4.0 mA to charge capacitor
C2 connected to the VCC pin. During this process, when the VCC
pin voltage reaches VCC(ON) = 15.1V, the Control Part (MIC) starts
operation. After that, the startup circuit stops automatically, in
order to eliminate its own power consumption.
The startup time is determined by the C2 capacitance. A ceramic
or film capacitor can be used for C2, and a value of 0.22 to 22 μF
is generally recommended. The approximate value of the startup
time can be calculated using the following formula:
tSTART
z
C2 ×
VCC(ON) – VCC(INT)
where:
(1)
|ICC(STARTUP)|
Contro1
LC 5550LD
D3
D4
D1
D2
D/ST
V AC
2
R1
VCC
D6
C2
8
1
S/GND
R3
R4
L1
D5
C1
VO
Figure 3. D/ST and VCC pin peripheral circuits
ICC
ICC(ON) (max)
= 4.7mA
Undervoltage Lockout (UVLO) Circuit
Figure 4 shows the relation of the VCC pin voltage to the circuit
current, ICC . When the VCC pin voltage reaches the Operation
Start Voltage, VCC(ON) = 15.1 V, the Control Part (MIC) starts
operation and the circuit current increases. In operation, when the
VCC pin voltage decreases to VCC(OFF) = 9.4 V, the Control Part
stops operation by UVLO circuit, and reverts to the state before
startup.
Stop
VCC(INT) is the initial voltage of the VCC pin in V.
Start
tSTART is the startup time in s, and
9.4 V
VCC(OFF)
15.1 V VCC pin voltage
VCC(ON)
Figure 4. VCC versus ICC
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
7
The VCC pin voltage must be set within the specifications of the
input voltage range and the output load range of the power supply,
according to the following formula. The optimal value is around
20 V.
VCC(BIAS)(max) < VCC < VCC(OVP)(min)
12.5 (V) < VCC < 28.5 (V)
(2)
When the VO is in the range shown in the above formula, within
the specifications of the input voltage range, and the output load
range of the power supply, the VCC pin voltage can be supplied from VO ( figure 3 ). In the case where VCC is higher than
VCC(OVP)(min) , the Zener diode D7 is inserted, to supply VCC
pin voltage (figure 5).
When the increasing power consumption of the Zener diode
is not negligible (VCC is higher than VCC(OVP)(min)), or VCC is
lower than VCC(BIAS)(max), the transformer (T1) is used to supply
the VCC pin voltage (figure 6).
Bias Assist Function
Figure 7 shows the VCC pin voltage behavior during the startup
period. If VCC pin voltage decreases enough to reach the Startup
Current Threshold Biasing Voltage, VCC(BIAS) = 11.0 V, the
Bias Assist function is activated before the voltage decreases to
VCC(OFF) = 9.4 V. While the Bias Assist function is operating, any
decrease of the VCC pin voltage is counteracted by a supplementary current from the Startup circuit, and thus VCC is kept
almost constant.
Because of the Bias Assist function, the use of a low-value
capacitor for C2 (see figure 3) is allowed. Also, because the
increase of VCC pin voltage becomes faster when the output runs
with excess voltage, the response time of the OVP function can
also be shortened. It is necessary to check and adjust the startup
process in the application, so that poor starting conditions may be
avoided.
LC5550LD
D/ST
8
D6
R1
VCC
2
D7
Contro1
Contro1
LC5550LD
C2
1
D/ST
S/GND
R3
8
C2
1
S/GND
R3
D5
L1
R4
D5
Figure 5. VCC pin peripheral circuits (VCC > VCC(OVP)(min))
VCC
pin voltage
D6
R1
VCC
2
R4
T1
Figure 6. VCC pin peripheral circuits (VCC > VCC(OVP)(min))
IC startup
Startup success
Target
Operating
Voltage
Increasing by
output voltage rising
Bias Assist period
VCC(ON) =
15.1 V
VCC(BIAS) =
11.0 V
VCC(OFF) =
9.4 V
Startup failure
Time
Figure 7. VCC during startup period
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
8
Soft Start Function
Operational Mode at Startup
Figure 8 shows the operation mode at startup. After the startup
period, when the COMP pin voltage reaches VCOMP(MIN) = 0.55 V,
the switching operation begins in PWM operation at an operation frequency of fOSC = 72 kHz (for LC5555LD, 60 kHz for
LC5556LD).
Figure 8 shows the operation waveform at startup. The soft
start operation begins when the COMP pin voltage reaches
VCOMP(MIN) = 0.55 V, and lasts until the output current becomes
constant.
During this period, check the items below:
• Ensure the VCC pin voltage does not drop to the Operation Stop
Voltage, VCC(OFF).
• Ensure the output current reaches the target value before the
Overload Protection (OLP) function is activated by the COMP
pin voltage reaching VCOMP(OLP) = 4.5 V.
Then, when the output voltage rises, the auxiliary winding voltage will also rise, and when the quasi-resonant signal of the
positive voltage on the OCP/BD pin reaches VBD(TH1) = 0.24 V or
more, the quasi-resonant operation will begin.
Figure 9 shows the OCP/BD pin voltage waveform expanded
time scale at point A of figure 8.
Soft-Start Period
COMP Pin
Voltage
IC Startup
VCOMP(MIN) = 0.55 V
S/GND
VCC Pin
Voltage
VCC(BIAS) = 11.0 V
S/GND
Constant Current Control
Output (LED)
Current, IOUT
Target
Current
GND (IOUT)
PWM operation
Quasi-resonant (QR) operation
Drain
Current, ID
S/GND
A
Time
Figure 8. Soft-start operation waveforms at startup
PWM operation Quasi-resonant (QR) operation
VBD(TH1)
OCP/BD Pin
Voltage
Drain
Current, ID
S/GND
time
GND(ID)
time
Figure 9. OCP/BD Pin Voltage (with time scale expanded at point A of figure 8)
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
9
Normal Operation
On-Time Control Operation
Figure 10 shows the peripheral circuit at the COMP pin, and
figure 11 shows the on-time control. The output control is done
by voltage mode control, which controls on-time depending on
output load, and average current control.
As shown in figure 11, in the average current control operation,
the internal error amplifier reference voltage VSEN(TH) = –0.2 V is
compared with the voltage drop of secondary side constant current detection resistance in the OTA circuit, and is equalized with
the COMP pin.
This averaged voltage at the COMP pin is compared with the
internal oscillator (OSC) output by the internal FB comparator,
and the on-time is controlled. Here, the internal OSC indicates the
oscillator circuit, which controls the PWM operation frequency,
quasi-resonant oscillation, and the maximum on-time limit. The
recommended value of capacitor C4 linked to the COMP pin is
approximately 1.0 to 4.7 μF. The value of R2 is 100 to 220 Ω.
R2 and C5 are the filter for ISENSE pin. In the case where R2
value is large, ISENSE current (–40 μA) affects the accuracy of
the LED current. Thus R2 and C5 values are recommended to be
approximately 220 Ω and approximately 0.1 μF, respectively.
The constant output current control of the output is done as
below:
LC5550LD
COMP
4
C4
3
R5
S/GND
ROCP
1
Figure 10. COMP pin peripheral circuit
LC5550LD
OSC
-
COMP voltage
4
FB
+
COMP
C4
ISENSE 6
+
OTA
• When the output load current becomes less than the target value,
the ISENSE pin voltage becomes low. This causes the averaged
OTA circuit output voltage at the COMP pin to become high,
and the on-time and the output current increase.
• When the output current becomes greater than the target value,
the circuits operate in the opposite way. The averaged voltage
at the COMP pin becomes low, and the on-time and the output
current decrease.
Figure 12 shows the average input current waveform. The averaged COMP pin voltage becomes constant, and the duty cycle
control becomes based on the EIN voltage (C1 voltage in figure 3).
It makes an averaged input current sine waveform which realizes
a high power factor.
D7
OCP/BD
-
S/GND
R2
C5
1
Constant current
Detection resistor
FB
-
LED
OSC
+
COMP
Voltage
Gate on-time
Drain current
Figure 11. On-time control
COMP pin voltage
S/GND
EIN
Drain current
Averaged input current
Figure 12. Averaged input current waveform
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
10
PWM Control
Figure 13 shows the waveforms and figure 14 shows the output
current path in PWM operation, respectively. The basic current
control of internal PWM is described in the following
section, the on-time of the MOSFET is controlled using VISENSE .
When VISENSE is equal to the internal PWM reference voltage, the
internal power MOSFET turns off.
PWM On-Time Period At startup, or during normal operation
PWM Off-Time Period When the internal power MOSFET turns
before the output current through the LED string reaches the
target current level, the internal power MOSFET turns on and the
output current flows through the ION path shown in figure 14.
off, the current recirculation diode, D5, is forward biased by the
back electromotive force (BEMF) in the inductor, L1, and D5
turns on. Then the energy stored in L1 during the PWM on-time
flows through the recirculation path shown as IOFF in figure 14.
Turing-Off Period The output current through the LED string is
equivalent to the current through the detection resistors, R3 and
R4. Thus the LED current is detected at the ISENSE pin as a
voltage, VISENSE . As described in the On-Time Control Operation
LED Current
ILED
Ԙ
ԙ
Ԛ
ԛ
I ON
IOFF
ION
IOFF
Turning-On Period After the PWM operation cycle (T =
1 / fOSC), the internal power MOSFET turns-on again, and the
PWM on-time period repeats.
LC5550LD
Control
V ISENSE
R3
S/GND
D/ST
VISENSE
ISENSE
MOSFET
D5
MOSFET
L1
R4
ON
OFF
1/f osc
OFF
ON
IOFF
V LED
ION
1/f osc
Figure 13. Constant current control operation in a buck configuration
Figure 14. Output current flow in a buck configuration during PWM on-time
and off-time periods
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
11
Quasi-Resonant Operation
Figure 15 shows the circuit of quasi-resonant topology. The buck
converter is a system which transfers the energy stored in the
choke coil, L1, to the output when the power MOSFET is turned
off. The MOSFET drain node begins free oscillation based on the
inductance, L, of the choke coil, L1, and CV across the drain and
source pins. The quasi-resonant operation is the VDS bottom-on
operation that turns-on the MOSFET at the bottom point of VDS
free oscillation.
t ONDLY
Ef
VDS
EIN
Bottom
Point
I OFF
Figure 16 shows an ideal VDS waveform during bottom-on
operation. Using bottom-on operation, switching loss and switching noise are reduced and it is possible to obtain converters with
high efficiency and low noise.
ID
tON
Half cycle of free oscillation, tONDLY
≈ √ L P × CV
Figure 16. Ideal bottom-on operation waveform (MOSFET turn-on at a
bottom point of a VDS waveform)
D6
R1
LC5550LD
D7
OCP/BD 3
C6
VCC 2
R5
D8
R7
C8
C4
8
D/ST
S/GND
1
R3
R4
D5
CV
L1
R6
Figure 15. OCP/BD pin peripheral circuit
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
12
Bottom-On Timing
During the turning-off of the power MOSFET, the output voltage
is fed through the delay circuit (D7, D8, R7, and C8 of figure
15) to the OCP/BD pin, and a positive voltage quasi-resonant
signal is provided to the OCP/BD pin (the quasi-resonant signal
is VBD ).
After the power MOSFET turns off, the quasi-resonant signal
immediately goes up and it exceeds the Quasi-Resonant Operation Threshold Voltage 1, VBD(TH1) = 0.24 V. After this occurs,
the power MOSFET remains off until the quasi-resonant signal comes down enough to cross the Quasi-Resonant Operation Threshold Voltage 2, VBD(TH2) = 0.16 V. Then the power
MOSFET again turns on. In addition, at this point, the threshold
voltage goes up to VBD(TH1) automatically, to prevent malfunction
of the quasi-resonant operation from noise interference.
Figure 17 defines the pulse width of the quasi-resonant signal.
For initiating quasi-resonant operation, the quasi-resonant signal
pulse width between the two points VBD(TH1) and VBD(TH2) , tQR ,
must be equal to 1.2 μs or more. This pulse width must be
ensured, while at the same time the OCP/BD pin peak voltage,
VBD(PK) , is recommended to be between 1.5 and 2.0 V. Both
conditions should be satisfied throughout the power supply input
and output ranges, and covering variations in R5 and R7 actual
component values.
R5 and C6 Setup R5 is recommended to be between
100 and 330 Ω, and C6 to be between 100 and 470 pF.
R7 Setup R7 must set the range for the quasi-resonant signal:
either greater than or equal to VBD(TH1) (under input and output
conditions where VCC becomes lowest), or less than the OCP/BD
Pin Overvoltage Protection (OVP) Threshold Voltage, VBD(OVP)
= 2.6 V (under conditions where VCC becomes highest). The
formula below is used to calculate R7, ignoring the value of ROCP
assuming ROCP << R5:
R3 × (VCC – VBD(PK) – 2 ×Vf )
(2)
VBD(PK)
given R5 = 220 Ω, VBD(PK) = 1.5 V, VCC = 16 V, and the Vf of D7
and D8 = 0.8 V. R7 is approximately 1.89 kΩ, and it is 1.8 kΩ in
the E12 series.
R7 =
If the pulse width is not satisfied, increase R5 or decrease R7, in
order to raise VBD(PK) . Alternatively, increasing the capacitance of
resonant capacitor CV is also effective because it widens the free
oscillation period. However, it causes an additional switching loss
increase; therefore, ensure the IC temperature rise is acceptable.
D7 and D8 Setup D7 and D8 are fast recovery and low coupling
capacitance diodes.
C8 Setup The delay time, tONDLY , after which the power
MOSFET turns on, is adjusted by the value of C8 , so that the
power MOSFET turns on at the bottom-on of VDS. To do so,
observe the power MOSFET drain voltage, VDS, the drain currnet, ID, and the quasi-resonant signal, under the maximum input
voltage and the maximum output power.
The following show how to adjust the turn-on point:
• If the turn-on point precedes the bottom of the VDS signal, it
causes higher switching losses. In that situation, after confirming the initial turn-on point, delay the turn-on point by increasing the C8 value gradually, so that the turn-on will match the
bottom point of VDS.
• In the converse situation, if the turn-on point lags behind the
VDS bottom point, it causes higher switching losses also. After
confirming the initial turn-on point, advance the turn-on point
by decreasing the C8 value gradually, so that the turn-on will
match the bottom point of VDS .
An initial reference value for C8 is about 1000 pF.
VBD(PK), 1.5 to 2.0 V recommended, but less than 2.6 V
V BD(TH1) = 0.34 V (max)
V BD(TH2 ) = 0.21 V (max)
S/GND
Pulse width, t QR ≥ 1.2 μs
Figure 17. Definition of the pulse width of the quasi-resonant signal
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
13
Protection Functions
Overvoltage Protection (OVP)
The IC has two OVP activation methods: linked to the VCC pin
and to the OCP/BD pin. Both methods are latched. After the
switching operation stops, the VCC pin voltage will begin to
decrease, and when it falls to VCC(BIAS) = 11.0 V, the Bias Assist
Function will be activated. When the Bias Assist Function is
activated, the startup current is supplied to the VCC pin in order
to prevent the VCC pin voltage from decreasing to VCC(OFF) = 9.4
V, and thus the latched state is maintained. Releasing the latched
state is done by turning off the input voltage and allowing the
VCC pin voltage to drop below VCC(OFF) .
Vcc
AC mains off
V CC(OFF)= 9.4V
Vo
VO(MAX) = 0.7mA × R6
VOUT(OVP)
COMP pin voltage
VCOMP(MIN)= 0.55V
Drain current
In the cases represented by the typical application circuit (figures 1 and 2), the output voltage VOUT(OVP) is approximately
31.5 V. When the output voltage is higher than the VCC
operation range, Zener diode D9 is necessary, as shown in figure 19. The output voltage is approximately 31.5 V + VZENER , in
this configuration.
ID
Time
Figure 18. Waveforms when VCC pin OVP function is being activated
R1
D9
D6
LC5550LD
D7
OCP/BD 3
C6
2
Latch release
V CC(BIAS)= 11.0V
VCC Pin Overvoltage Protection
Figure 18 shows the waveforms of the OVP function on the VCC
pin. When the VCC pin voltage with reference to the S/GND pin
reaches VCC(OVP) = 31.5 V or more, VCC pin OVP is activated
and the IC stops switching operation, in latch mode. Because
VCC pin voltage is proportional to the output voltage, it can be
used to detect an output overvoltage event.
VCC
Latched shutdown
V CC(OVP)= 31.5V
R5
D8
R7
C8
C4
D/ST
S/GND
8
1
R3
CV
R4
L1
D5
Figure 19. Circuit example in the case where the output voltage is higher than the VCC operation range
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
14
When the VCC pin OVP function is being activated, the VCC pin
voltage is maintained by the current from the startup circuit of the
IC. Thus the latch operation continues. The current charges the
output capacitor. Thus the output voltage rises.
When the D/ST pin voltage with reference to the S/GND pin
drops below the Startup Circuit Operation Voltage, VSTARTUP , the
VCC pin voltage decreases and the latched is released.
In order to continue the latch operation, the D/ST pin voltage
must be above VSTARTUP . The resistor (R6 in figures 1 and 2)
is necessary, placed in parallel to the output capacitor. The
maximum output voltage in latch operation is approximately
VO(max) ≈ 0.7 mA × R6.
The optimal value of R6 should be determined with consideration of the latch operation, the maximum output voltage, and the
effect on LED current in normal operation. Releasing the latched
state is done by turning off the input voltage and allowing the
VCC pin voltage to drop below VCC(OFF) .
OCP/BD Pin Overvoltage Protection
Figure 20 shows the OCP/BD pin OVP circuit. The OCP/BD
pin OVP function is activated when diode D10 is added
between OCP/BD pin and VCC pin in a quasi-resonant circuit
configuration.
Figure 21 shows the waveform of the OCP/BD pin OVP function.
When the OCP/BD pin voltage with reference to the S/GND pin
reaches VBD(OVP) = 2.6 V or more, OCP/BD pin OVP is activated
and the IC stops switching operation, in latch mode. This input
voltage must be less than the absolute maximum rating, 5 V.
Releasing the latched state is done by turning off the input voltage and allowing the VCC pin voltage to drop below VCC(OFF) .
R1
LC5550LD
D7
OCP/BD 3
VCC
D9
D6
C6
2
R5
D8
R7
C8
C4
D/ST
S/GND
8
1
R3
CV
R4
L1
D5
Figure 20. OCP/BD pin OVP circuit
VCC pin voltage
AC mains off
Latch release
V CC(BIAS)= 11.0V
OCP/BD pin voltage
V CC(OFF)= 9.4V
Latched shutdown
VBD(OVP )= 2.6V
Drain current ID
Figure 21. Waveforms when OCP/BD pin OVP function is being activated
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
15
Overload Protection (OLP)
In the overload protection (OLP) state, the peak drain current is
limited by OCP operation under an overload condition. Figures
22 and 23 show the peripheral circuit of the COMP pin and waveforms when OLP function is being activated, respectively.
In an overload condition, the VCC pin voltage drops because
the output voltage drops. When the VCC pin voltage reaches the
Startup Current Threshold Biasing Voltage, VCC(BIAS) = 11.0 V,
the Bias Assist Function is activated to avoid the VCC pin voltage from decreasing.
Simultaneously, the ISENSE pin voltage decreases. Because the
OTA circuit output inside the IC will be lost if the ISENSE pin
voltage falls to the error amplifier reference voltage, VSEN(TH) =
–0.2 V, the C4 capacitor, connected to the COMP pin, is charged
by the current generator inside the COMP pin.
When the COMP pin voltage reaches the OLP Threshold Voltage,
VCOMP(OLP) = 4.5 V, the overload protection circuit will operate and stop switching operation, in latch mode. Releasing the
latched state is done by turning off the input voltage and allowing
the VCC pin voltage to drop below VCC(OFF).
If the OLP function is activated at transient conditions such as
startup, it may cause startup failure. In order to avoid this, a
C4 value of 1 to 4.7 μF is generally recommended. Too determine
the optimal value, it is necessary to check and adjust in
the application
LC5550LD
7V Reg
3
6
D/ST
8
OTA
1
COMP
C4
ISEN
S/GND
R3
L1
R4
D5
Figure 22. COMP pin peripheral circuit
VCC pin voltage
V CC(BIAS)1= 11.0V
COMP pin voltage
AC mains off
Latch release
V CC(OFF)= 9.4V
Latched shutdown
V COMP(OLP )= 4.5V
Drain current ID
Figure 23. Waveforms when OLP function is being activated
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
16
Overcurrent Protection (OCP)
The Overcurrent Protection (OCP) feature monitors the power
MOSFET drain current on a pulse-by-pulse basis, in order to
limit output power. The drain current of the power MOSFET is
detected by the current detection resistor, R3, placed between the
OCP/BD pin and the S/GND pin, as shown in figure 24.
The voltage across R3, VR3 , is fed through R5 to the OCP/BD
pin, to be detected by it. The turn-off point for the power
MOSFET can be determined as that point where VR3 reaches the
value of the following equation:
VR3 = – |VOCP | + R5
(3)
|IOCP |
where
VOCP: OCP threshold voltage (−0.8 V),
R5: R5 resistance, and
IOCP: OCP/BD pin source current (−40 μA).
• R5 setup. In order to minimize effects of variation in the
internal resistor, R5 is recommended to have a value
from 100 to 330 Ω.
+
3
The surge current pulse width must be less than tON(LEB) as shown
in figure 25. In case its width is longer than that, try these measures:
Thermal Shutdown Protection
Thermal Shutdown protection is activated when the temperature
of the Control Part (MIC) in the IC reaches TJ(TSD) = 135°C(min),
and then the IC stops switching operation, in latch mode. Releasing the latched state is done by turning off the input voltage and
allowing the VCC pin voltage to drop below VCC(OFF).
tON(LEB )
OCP/BD
OCP detection period
S/GND
-0.6V
Reg
LOGIC
DRIVE
R5
C6
D/ST
Because the OCP function detects a peak current, it can react
to the surge voltage at the power MOSFET turn-on edge and
thus the power MOSFET might turn off. In order to avoid this,
the Leading Edge Blanking Time is built-in. The Leading Edge
Blanking Time, tON(LEB), is set to 600 ns.
• adjust the turn-on point to the VDS bottom point
• reduce the voltage resonant capacitor CV capacitance
A filter is inserted at the OCP/BD pin in order to prevent malfunction:
LC5550LD
• C6 setup. C6 is recommended to have a value from
100 to 470 pF, with good temperature characteristics. Selecting
larger capacitances for C6 would cause OCP response to become
slow, and then it would result in an increase in the peak drain current at transient conditions, such as startup.
8
1
VROCP
S/GND
R3
R4
L1
D5
Surge pulse voltage width
at turning on
CV
Figure 24. OCP/BD pin peripheral circuit
Figure 25. OCP/BD pin voltage (converted from MOSFET drain current
by R3)
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
17
Maximum On-Time Limiting Function
The maximum on-time, set at tON(MAX) = 9.3 μs (for the
LC5555LD, 11.2 μs for LC5556LD), limits lower side operation frequency (see figure 26), at low AC input voltage on or off.
Ensure that the actual on-time at the minimum AC input and the
maximum load condition does not reach tON(MAX).
Design Considerations
Output Load (LEDs) The relation between the LED ratings and
the output current ratings of the IC should be considered. In buck
configuration, the total forward voltage drop, VLED , of the LEDs
in series, should be less than the input voltage, VAC , because the
LEDs would be turned off if VLED were more than VAC . Normally, a VLED of 9 to 60 V is assumed.
ID
Drain Current
Free-Wheeling Diode (D5) This is a free-wheeling diode for
recirculation of the output current. The energy stored during the
PWM on-time period is provided to LEDs through this diode during the off-time period. The withstand voltage and recovery time,
trr , should be considered. If a diode with a long recovery time, trr ,
is selected, surge current may flow through IC when the internal
power MOSFET turns on. As a result, it would cause increased
noise, potentially malfunction due to the noise, and decreased
efficiency. Thus, it is recommended to select a diode which has a
trr of approximately 30 ns, or a diode with a lower trr .
Current Detection Resistor (R3) Choose a low equivalent series
inductance and high surge tolerant type for the current detection
resistor. If a high inductance type is used, it may cause malfunctioning because of the high frequency current running through it.
Maximum On-Time
time
V DS
Voltage between
drain and source
time
Figure 26. Confirmation of Maximum On-Time
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
18
• The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the
latest revision of the document before use.
• Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or
any other rights of Sanken or any third party which may result from its use.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device
failure or malfunction.
• Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and
its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever
long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales
representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
• In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the
degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the
load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general,
derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such
as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses,
instantaneous values, maximum values and minimum values must be taken into consideration.
In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of
derating of junction temperature affects the reliability significantly.
• When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically
or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance
and proceed therewith at your own responsibility.
• Anti radioactive ray design is not considered for the products listed herein.
• Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network.
• The contents in this document must not be transcribed or copied without Sanken's written consent.
LC5550LD-AN, Rev. 1.2
SANKEN ELECTRIC CO., LTD.
19