SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50 V Collector-Emitter Voltage VCEO 45 -40 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 6 -6 A Continuous Collector Current IC 2 -2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 381 ZDT6790 ZDT6790 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. PARAMETER SYMBOL MIN. V IC=100µ A Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µ A 45 V IC=10mA* Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA* 5 V IE=100µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A 0.1 µA VCB=35V Collector Cutoff Current ICBO -0.1 µA VCB=-30V 0.1 µA VEB=4V Emitter Cutoff Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation VCE(sat) Voltage 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Base-Emitter Saturation Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 500 400 150 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio hFE Transition Frequency fT 150 300 250 200 150 Input Capacitance Cibo Transition Frequency fT 100 Output Capacitance Switching Times PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 45 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO Emitter Cutoff Current IEBO TYP. MAX. UNIT IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 16 pF VCB=10V, f=1MHz Input Capacitance Cibo ton toff 33 1300 ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V Output Capacitance Switching Times *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT690 datasheet. TYP. MAX. UNIT -0.75 800 IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 24 pF VCB=-10V, f=1MHz ton toff 35 600 ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT790 datasheet. 3 - 382 CONDITIONS. 3 - 383 ZDT6790 ZDT6790 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. PARAMETER SYMBOL MIN. V IC=100µ A Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µ A 45 V IC=10mA* Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA* 5 V IE=100µ A Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A 0.1 µA VCB=35V Collector Cutoff Current ICBO -0.1 µA VCB=-30V 0.1 µA VEB=4V Emitter Cutoff Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation VCE(sat) Voltage 0.1 0.5 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* -0.25 -0.45 -0.75 V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Base-Emitter Saturation Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 500 400 150 Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio hFE Transition Frequency fT 150 300 250 200 150 Input Capacitance Cibo Transition Frequency fT 100 Output Capacitance Switching Times PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 45 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO Emitter Cutoff Current IEBO TYP. MAX. UNIT IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz Cobo 16 pF VCB=10V, f=1MHz Input Capacitance Cibo ton toff 33 1300 ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V Output Capacitance Switching Times *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT690 datasheet. TYP. MAX. UNIT -0.75 800 IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 24 pF VCB=-10V, f=1MHz ton toff 35 600 ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT790 datasheet. 3 - 382 CONDITIONS. 3 - 383