Data Sheet Midium Power Transistors (±50V / ±3A) MP6Z13 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 2) High speed switching Applications Low Frequency Amplifier Driver Packaging specifications Type Emitter Base Collector Emitter Base Collector (6) (5) (4) (1) (2) (3) Inner circuit (Unit : mm) Package MPT6 Code TR Basic ordering unit (pieces) 1000 (6) Absolute maximum ratings (Ta = 25C) <Tr.1> Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage Emitter-base voltage VCEO 50 6 3 6 V V A A Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage Emitter-base voltage VCEO VEBO IC ICP *1 -50 -6 V V -3 -6 A A Collector current DC Pulsed VEBO IC ICP *1 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector (5) (4) Tr.2 Tr.1 (1) (2) (3) <Tr.2> Parameter Collector current DC Pulsed <Tr.1 and Tr.2> Parameter Power dissipation Junction temperature Range of storage temperature Symbol Limits Unit PD 2.0 1.4 W/Total W/Element *2 PD *2 Tj 150 Tstg -55 to 150 C C *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/7 2011.02 - Rev.A MP6Z13 Data Sheet Electrical characteristics (Ta = 25°C) <Tr.1> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 - - V IC= 1mA Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage Parameter Conditions BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 50V Emitter cut-off current IEBO A VEB= 4V Collector-emitter staturation voltage DC current gain Transition frequency - - 1 *1 VCE(sat) - 130 350 hFE 180 - 450 - - 320 - MHz 13 - pF fT *1 mV IC= 1A, IB= 50mA VCE= 3V, IC= 50mA VCE= 10V IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHz Collector output capacitance Cob - Turn-on time ton *2 - 50 - ns Storage time tstg *2 - 450 - ns - 80 - ns Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -50 - - V IC= -1mA Collector-base breakdown voltage BVCBO -50 - - V IC= -100μA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100μA Collector cut-off current ICBO - - -1 A VCB= -50V Emitter cut-off current IEBO - - -1 A VEB= -4V *1 VCE(sat) - -200 -400 hFE 180 - 450 - VCE= -3V, I C= -50mA - 300 - MHz VCE= -10V IE=500mA, f=100MHz tf Fall time *2 IC= 1.5A, I B1= 150mA, IB2=-150mA, V CC~ _ 10V *1 Pulsed *2 See switching time test circuit <Tr.2> Parameter Collector-emitter staturation voltage DC current gain Transition frequency fT *1 mV IC= -1A, I B= -50mA Collector output capacitance Cob - 24 - pF Turn-on time ton *2 - 45 - ns Storage time tstg *2 - 250 - ns - 35 - ns Fall time tf *2 Conditions VCB= -10V, I E=0A f=1MHz IC= -1.5A, I B1= -150mA, IB2=150mA, VCC ~ _ -10V *1 Pulsed *2 See switching time test circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/7 2011.02 - Rev.A Data Sheet MP6Z13 Electrical characteristic curves (Ta=25C) 〈Tr.1〉 Fig.2 DC Current Gain vs. Collector Current ( I ) Fig.1 Typical Output Characteristics 5mA 3.0mA 2.5mA 1000 0.5 Ta=25°C 2.0mA 1.5mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] 0.4 0.3 1.0mA 0.2 VCE=5V 3V 100 IB=0.5mA 0.1 Ta=25°C 0.0 10 0 0.5 1 1.5 2 1 10 Fig3. DC Current Gain vs. Collector Current ( II ) 10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1000 1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE=3V DC CURRENT GAIN : hFE 1000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE :VCE[V] Ta=125°C 75°C 25°C -40°C 100 10 Ta=25°C 0.1 IC/IB=50 20 10 0.01 0.001 1 10 100 1000 10000 1 10 COLLECTOR CURRENT : IC[mA] 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) 10000 1 VCE=3V COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 100 0.1 Ta=125°C 75°C 25°C -40°C 0.01 1000 Ta=125°C 75°C 25°C -40°C 100 10 IC/IB=20 0.001 1 1 10 100 1000 0 10000 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE[V] COLLECTOR CURRENT : IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.2 3/7 2011.02 - Rev.A Data Sheet MP6Z13 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain BandwidthProduct vs. Emitter Current 1000 Ta=25°C f=1MHz IE=0A IC=0A Cib Ta=25°C VCE=10V TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 10 Cob 1 100 10 0.1 1 10 100 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area 10 COLLECTOR CURRENT : IC [A] 1ms 10ms 1 100ms 0.1 DC (Mounted on a ceramic board) 0.01 Ta=25°C When one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/7 2011.02 - Rev.A Data Sheet MP6Z13 〈Tr.2〉 Fig.1 Typical Output Characteristics -5.0mA -4.0mA Fig.2 DC Current Gain vs. Collector Current ( I ) -3.0mA -0.5 1000 Ta=25°C -2.5mA -2.0mA -0.3 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] -0.4 -1.5mA -0.2 -1.0mA -0.1 100 VCE= -5V -3V IB=-0.5mA 10 0.0 0 -0.5 -1 -1.5 -1 -2 -10 Fig.3 DC Current Gain vs. Collector Current ( II ) -10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) -1 1000 100 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE= -3V DC CURRENT GAIN : hFE -1000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE : VCE[V] Ta=125°C 75°C 25°C -40°C Ta=25°C -0.1 IC/IB=50 20 10 -0.01 -0.001 10 -1 -10 -100 -1000 -1 -10000 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) -1 -10000 VCE= -3V COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] -100 -0.1 Ta=125°C 75°C 25°C -40°C -0.01 -1000 Ta=125°C 75°C 25°C -40°C -100 -10 IC/IB=20 -1 -0.001 -1 -10 -100 -1000 0 -10000 COLLECTOR CURRENT : IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE[V] 5/7 2011.02 - Rev.A Data Sheet MP6Z13 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C f=1MHz IE=0A IC=0A Cib Ta=25°C VCE= -10V TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 Cob 10 1 -0.1 100 10 -1 -10 -100 10 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area -10 1ms COLLECTOR CURRENT : IC[A] 10ms -1 100ms -0.1 DC (Mounted on a ceramic board) -0.01 Ta=25°C When one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/7 2011.02 - Rev.A MP6Z13 Data Sheet Switching time test circuit RL=6.8Ω <Tr.1> I B1 VIN IC VCC ~ _ 10V IB2 Pw ~ _50μs DUTY CYCLE≦1% Pw BASE CURRENT WAVEFORM IB1 IB2 COLLECTOR CURRENT WAVEFORM t on tstg tf 90% IC 10% <Tr.2> RL=6.8Ω IB1 VIN Pw IC VCC~_ -10V IB2 _ 50μs Pw ~ DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM tstg tf 90% IC 10% www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/7 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A