SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp C E COMPLEMENTARY TYPES PARTMARKING DETAILS - FZT957 - FZT857 FZT958 - N/A DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT957 FZT958 UNIT Collector-Base Voltage VCBO -300 -400 V Collector-Emitter Voltage VCEO -300 -400 V Emitter-Base Voltage VEBO Peak Pulse Current ICM -2 -1.5 A Continuous Collector Current IC -1 -0.5 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -6 V 3 W -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 289 FZT957 FZT957 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Collector-Base Breakdown Voltage V(BR)CBO -330 -440 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CER -330 -440 V IC=-1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO -300 Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -60 -110 -170 -100 -165 -240 mV mV mV IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-1A, IB=-300mA* -910 -1150 mV IC=-1A, IB=-300mA* V IC=-10mA* V -400 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT -750 V -1020 mV IE=-100µA IC=-1A, VCE=-10V* 1.4 1.2 1.0 0.6 0.01 0.1 1 IC - Collector Current (Amps) MHz Cobo 23 pF VCB=-20V, f=1MHz Switching Times ton toff 108 2500 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1.4 VCE=10V 1.2 1.0 200 0.8 0.6 100 0.4 0.2 0.01 0.1 1.4 1.4 IC/IB=10 1.2 1.0 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 1.6 10 20 0.8 10 20 1 -55°C +25°C +100°C +175°C 1.6 300 10 VCE=10V 10 20 Single Pulse Test Tamb=25C 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 0.01 1 DC 1s 100ms 10ms 1ms 100µs 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 290 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC +100°C +25°C -55°C 1.6 IC=-100mA, VCE=-10V f=50MHz Output Capacitance 0 10 20 VCE(sat) v IC - (Volts) 85 0.4 0.2 IC=-10mA, VCE=-10V* IC=-0.5A, VCE=-10V* IC=-1A, VCE=-10V* IC=-2A, VCE=-10V* 300 1.0 0.8 0.4 IC/IB=5 1.2 0.6 0 V 200 200 170 10 1.4 0.8 0 0.001 100 100 90 -55°C +25°C +175°C 1.6 0.2 - Normalised Gain VBE(sat) -8 h Base-Emitter Saturation Voltage -6 Tamb=25°C IC/IB=5 IC/IB=20 1.6 - (Volts) CONDITIONS. V UNIT - (Volts) MAX. - Typical Gain TYP. h MIN. V SYMBOL - (Volts) PARAMETER 3 - 291 1000 FZT957 FZT957 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Collector-Base Breakdown Voltage V(BR)CBO -330 -440 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CER -330 -440 V IC=-1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO -300 Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -60 -110 -170 -100 -165 -240 mV mV mV IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* IC=-1A, IB=-300mA* -910 -1150 mV IC=-1A, IB=-300mA* V IC=-10mA* V -400 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT -750 V -1020 mV IE=-100µA IC=-1A, VCE=-10V* 1.4 1.2 1.0 0.6 0.01 0.1 1 IC - Collector Current (Amps) MHz Cobo 23 pF VCB=-20V, f=1MHz Switching Times ton toff 108 2500 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1.4 VCE=10V 1.2 1.0 200 0.8 0.6 100 0.4 0.2 0.01 0.1 1.4 1.4 IC/IB=10 1.2 1.0 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 1.6 10 20 0.8 10 20 1 -55°C +25°C +100°C +175°C 1.6 300 10 VCE=10V 10 20 Single Pulse Test Tamb=25C 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 0.01 1 DC 1s 100ms 10ms 1ms 100µs 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 290 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC +100°C +25°C -55°C 1.6 IC=-100mA, VCE=-10V f=50MHz Output Capacitance 0 10 20 VCE(sat) v IC - (Volts) 85 0.4 0.2 IC=-10mA, VCE=-10V* IC=-0.5A, VCE=-10V* IC=-1A, VCE=-10V* IC=-2A, VCE=-10V* 300 1.0 0.8 0.4 IC/IB=5 1.2 0.6 0 V 200 200 170 10 1.4 0.8 0 0.001 100 100 90 -55°C +25°C +175°C 1.6 0.2 - Normalised Gain VBE(sat) -8 h Base-Emitter Saturation Voltage -6 Tamb=25°C IC/IB=5 IC/IB=20 1.6 - (Volts) CONDITIONS. V UNIT - (Volts) MAX. - Typical Gain TYP. h MIN. V SYMBOL - (Volts) PARAMETER 3 - 291 1000 FZT958 FZT958 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 -600 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CER -400 -600 V IC=-1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO -400 -550 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -100 -150 -340 -150 -200 -400 mV mV mV IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* -830 -950 mV IC=-500mA, IB=-100mA* 1.6 1.4 1.0 0.8 0.6 0.4 hFE Transition Frequency fT 85 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 19 pF VCB=-20V, f=1MHz Switching Times ton toff 104 2400 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V -840 mV IC=-500mA, VCE=-10V* 200 0.8 0.6 100 0.4 0.2 0.001 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1.4 0.01 0.1 10 20 10 20 1 1.4 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 VCE=10V 10 20 Single Pulse Test Tamb=25C 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 0.01 1 DC 1s 100ms 10ms 1ms 100µs 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 292 0.01 0.1 1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 300 1.0 1.6 - (Volts) 300 VCE=10V 1.2 IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* V 200 200 20 0 0.001 10 20 VCE(sat) v IC +100°C +25°C -55°C 1.4 0 100 100 10 0.01 0.1 1 IC - Collector Current (Amps) - Typical Gain Static Forward Current Transfer Ratio -725 0.2 h VBE(on) 1.0 0.6 0.4 1.6 IC/IB=5 1.2 VCE(sat) v IC - Normalised Gain Base-Emitter Turn-On Voltage 1.4 0.8 0.2 h VBE(sat) -55°C +25°C +175°C 1.6 1.2 0 0.001 Base-Emitter Saturation Voltage Tamb=25°C IC/IB=5 IC/IB=20 - (Volts) UNIT V MAX. - (Volts) TYP. V MIN. - (Volts) SYMBOL V PARAMETER 3 - 293 1000 FZT958 FZT958 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 -600 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CER -400 -600 V IC=-1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO -400 -550 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ -50 -1 nA µA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -100 -150 -340 -150 -200 -400 mV mV mV IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* -830 -950 mV IC=-500mA, IB=-100mA* 1.6 1.4 1.0 0.8 0.6 0.4 hFE Transition Frequency fT 85 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 19 pF VCB=-20V, f=1MHz Switching Times ton toff 104 2400 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V -840 mV IC=-500mA, VCE=-10V* 200 0.8 0.6 100 0.4 0.2 0.001 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 1.4 0.01 0.1 10 20 10 20 1 1.4 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 10 VCE=10V 10 20 Single Pulse Test Tamb=25C 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) 0.01 1 DC 1s 100ms 10ms 1ms 100µs 10 100 VCE - Collector Voltage (V) Safe Operating Area VBE(on) v IC 3 - 292 0.01 0.1 1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 300 1.0 1.6 - (Volts) 300 VCE=10V 1.2 IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* V 200 200 20 0 0.001 10 20 VCE(sat) v IC +100°C +25°C -55°C 1.4 0 100 100 10 0.01 0.1 1 IC - Collector Current (Amps) - Typical Gain Static Forward Current Transfer Ratio -725 0.2 h VBE(on) 1.0 0.6 0.4 1.6 IC/IB=5 1.2 VCE(sat) v IC - Normalised Gain Base-Emitter Turn-On Voltage 1.4 0.8 0.2 h VBE(sat) -55°C +25°C +175°C 1.6 1.2 0 0.001 Base-Emitter Saturation Voltage Tamb=25°C IC/IB=5 IC/IB=20 - (Volts) UNIT V MAX. - (Volts) TYP. V MIN. - (Volts) SYMBOL V PARAMETER 3 - 293 1000