ZETEX FZT958

SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
FZT957
FZT958
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
C
E
COMPLEMENTARY TYPES PARTMARKING DETAILS -
FZT957 - FZT857
FZT958 - N/A
DEVICE TYPE IN FULL
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT957
FZT958
UNIT
Collector-Base Voltage
VCBO
-300
-400
V
Collector-Emitter Voltage
VCEO
-300
-400
V
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
-2
-1.5
A
Continuous Collector Current
IC
-1
-0.5
A
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature
Range
Tj:Tstg
-6
V
3
W
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289
FZT957
FZT957
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Collector-Base
Breakdown Voltage
V(BR)CBO
-330
-440
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-330
-440
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-300
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-60
-110
-170
-100
-165
-240
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-1A, IB=-300mA*
-910
-1150
mV
IC=-1A, IB=-300mA*
V
IC=-10mA*
V
-400
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer Ratio
hFE
Transition Frequency
fT
-750
V
-1020
mV
IE=-100µA
IC=-1A, VCE=-10V*
1.4
1.2
1.0
0.6
0.01
0.1
1
IC - Collector Current (Amps)
MHz
Cobo
23
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
108
2500
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
1.4
VCE=10V
1.2
1.0
200
0.8
0.6
100
0.4
0.2
0.01
0.1
1.4
1.4
IC/IB=10
1.2
1.0
0.6
0.4
0.2
0 0.001
IC - Collector Current (Amps)
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
1.6
10 20
0.8
10 20
1
-55°C
+25°C
+100°C
+175°C
1.6
300
10
VCE=10V
10 20
Single Pulse Test Tamb=25C
1
1.2
1.0
0.8
0.1
0.6
0.4
0.2
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
0.01
1
DC
1s
100ms
10ms
1ms
100µs
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 290
0.01
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
0
10 20
VCE(sat) v IC
- (Volts)
85
0.4
0.2
IC=-10mA, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-10V*
IC=-2A, VCE=-10V*
300
1.0
0.8
0.4
IC/IB=5
1.2
0.6
0
V
200
200
170
10
1.4
0.8
0 0.001
100
100
90
-55°C
+25°C
+175°C
1.6
0.2
- Normalised Gain
VBE(sat)
-8
h
Base-Emitter
Saturation Voltage
-6
Tamb=25°C
IC/IB=5
IC/IB=20
1.6
- (Volts)
CONDITIONS.
V
UNIT
- (Volts)
MAX.
- Typical Gain
TYP.
h
MIN.
V
SYMBOL
- (Volts)
PARAMETER
3 - 291
1000
FZT957
FZT957
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Collector-Base
Breakdown Voltage
V(BR)CBO
-330
-440
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-330
-440
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-300
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-60
-110
-170
-100
-165
-240
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-1A, IB=-300mA*
-910
-1150
mV
IC=-1A, IB=-300mA*
V
IC=-10mA*
V
-400
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer Ratio
hFE
Transition Frequency
fT
-750
V
-1020
mV
IE=-100µA
IC=-1A, VCE=-10V*
1.4
1.2
1.0
0.6
0.01
0.1
1
IC - Collector Current (Amps)
MHz
Cobo
23
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
108
2500
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
1.4
VCE=10V
1.2
1.0
200
0.8
0.6
100
0.4
0.2
0.01
0.1
1.4
1.4
IC/IB=10
1.2
1.0
0.6
0.4
0.2
0 0.001
IC - Collector Current (Amps)
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
1.6
10 20
0.8
10 20
1
-55°C
+25°C
+100°C
+175°C
1.6
300
10
VCE=10V
10 20
Single Pulse Test Tamb=25C
1
1.2
1.0
0.8
0.1
0.6
0.4
0.2
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
0.01
1
DC
1s
100ms
10ms
1ms
100µs
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 290
0.01
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
0
10 20
VCE(sat) v IC
- (Volts)
85
0.4
0.2
IC=-10mA, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-10V*
IC=-2A, VCE=-10V*
300
1.0
0.8
0.4
IC/IB=5
1.2
0.6
0
V
200
200
170
10
1.4
0.8
0 0.001
100
100
90
-55°C
+25°C
+175°C
1.6
0.2
- Normalised Gain
VBE(sat)
-8
h
Base-Emitter
Saturation Voltage
-6
Tamb=25°C
IC/IB=5
IC/IB=20
1.6
- (Volts)
CONDITIONS.
V
UNIT
- (Volts)
MAX.
- Typical Gain
TYP.
h
MIN.
V
SYMBOL
- (Volts)
PARAMETER
3 - 291
1000
FZT958
FZT958
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
-600
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-400
-600
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-400
-550
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
-830
-950
mV
IC=-500mA, IB=-100mA*
1.6
1.4
1.0
0.8
0.6
0.4
hFE
Transition Frequency
fT
85
MHz
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
19
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
104
2400
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
-840
mV
IC=-500mA, VCE=-10V*
200
0.8
0.6
100
0.4
0.2
0.001
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
1.4
0.01
0.1
10 20
10 20
1
1.4
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
IC - Collector Current (Amps)
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
10
VCE=10V
10 20
Single Pulse Test Tamb=25C
1
1.2
1.0
0.8
0.1
0.6
0.4
0.2
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
0.01
1
DC
1s
100ms
10ms
1ms
100µs
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 292
0.01
0.1
1
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
1.6
300
1.0
1.6
- (Volts)
300
VCE=10V
1.2
IC=-10mA, VCE=-10V*
IC=-500mA, VCE=-10V*
IC=-1A, VCE=-10V*
V
200
200
20
0 0.001
10 20
VCE(sat) v IC
+100°C
+25°C
-55°C
1.4
0
100
100
10
0.01
0.1
1
IC - Collector Current (Amps)
- Typical Gain
Static Forward
Current Transfer Ratio
-725
0.2
h
VBE(on)
1.0
0.6
0.4
1.6
IC/IB=5
1.2
VCE(sat) v IC
- Normalised Gain
Base-Emitter
Turn-On Voltage
1.4
0.8
0.2
h
VBE(sat)
-55°C
+25°C
+175°C
1.6
1.2
0 0.001
Base-Emitter
Saturation Voltage
Tamb=25°C
IC/IB=5
IC/IB=20
- (Volts)
UNIT
V
MAX.
- (Volts)
TYP.
V
MIN.
- (Volts)
SYMBOL
V
PARAMETER
3 - 293
1000
FZT958
FZT958
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
-600
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-400
-600
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-400
-550
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-100
-150
-340
-150
-200
-400
mV
mV
mV
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
-830
-950
mV
IC=-500mA, IB=-100mA*
1.6
1.4
1.0
0.8
0.6
0.4
hFE
Transition Frequency
fT
85
MHz
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
19
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
104
2400
ns
ns
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
-840
mV
IC=-500mA, VCE=-10V*
200
0.8
0.6
100
0.4
0.2
0.001
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
1.4
0.01
0.1
10 20
10 20
1
1.4
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
IC - Collector Current (Amps)
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
10
VCE=10V
10 20
Single Pulse Test Tamb=25C
1
1.2
1.0
0.8
0.1
0.6
0.4
0.2
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
0.01
1
DC
1s
100ms
10ms
1ms
100µs
10
100
VCE - Collector Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 292
0.01
0.1
1
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
1.6
300
1.0
1.6
- (Volts)
300
VCE=10V
1.2
IC=-10mA, VCE=-10V*
IC=-500mA, VCE=-10V*
IC=-1A, VCE=-10V*
V
200
200
20
0 0.001
10 20
VCE(sat) v IC
+100°C
+25°C
-55°C
1.4
0
100
100
10
0.01
0.1
1
IC - Collector Current (Amps)
- Typical Gain
Static Forward
Current Transfer Ratio
-725
0.2
h
VBE(on)
1.0
0.6
0.4
1.6
IC/IB=5
1.2
VCE(sat) v IC
- Normalised Gain
Base-Emitter
Turn-On Voltage
1.4
0.8
0.2
h
VBE(sat)
-55°C
+25°C
+175°C
1.6
1.2
0 0.001
Base-Emitter
Saturation Voltage
Tamb=25°C
IC/IB=5
IC/IB=20
- (Volts)
UNIT
V
MAX.
- (Volts)
TYP.
V
MIN.
- (Volts)
SYMBOL
V
PARAMETER
3 - 293
1000