BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP640ESD BFP640ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2012-09-17, Revision 1.1 Page Subjects (major changes since previous revision) This data sheet replaces the revision from 2010-06-29. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the data sheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2012-09-17 BFP640ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 17 20 Revision 1.1, 2012-09-17 BFP640ESD List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 17 17 18 18 19 20 20 21 21 22 22 23 23 24 24 25 25 27 27 27 27 Revision 1.1, 2012-09-17 BFP640ESD List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Table 5-10 Table 5-11 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision 1.1, 2012-09-17 BFP640ESD Product Brief 1 Product Brief The BFP640ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1, 2012-09-17 BFP640ESD Features 2 • • • • • • • • Features Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology 2 kV ESD robustness (HBM) due to integrated protection circuits High maximum RF input power of 21 dBm 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB Gms at 2.4 GHz, 30 mA 27 dBm OIP3 typical at 2.4 GHz, 30 mA Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available Applications As Low Noise Amplifier (LNA) in • • • • • Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile / portable TV, CATV, FM radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP640ESD SOT343 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E T4s Revision 1.1, 2012-09-17 BFP640ESD Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage1) Collector emitter voltage 3) Collector current RF input power4) ESD stress pulse 5) Note / Test Condition Max. Open base VCEO – 4.1 V TA = 25 °C – 3.6 V TA = -55 °C Open emitter VCBO 2) Base current Unit – 4.8 V TA = 25 °C – 4.3 V TA = -55 °C E-B short circuited VCES – 4.1 V TA = 25 °C – 3.6 V TA = -55 °C IB -10 6 mA – IC – 50 mA – PRFin – 21 dBm – VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation 6) Ptot – 200 mW TS ≤ 88 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – 1) 2) 3) 4) 5) 6) Low VCBO due to integrated protection circuits. VCES is identical to VCEO due to integrated protection circuits. Sustainable reverse bias current is high due to integrated protection circuits. RF input power is high due to integrated protection circuits. ESD robustness is high due to integrated protection circuits. TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.1, 2012-09-17 BFP640ESD Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 310 – K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation). 250 Ptot [mW] 200 150 100 50 0 0 25 50 75 TS [°C] 100 125 150 Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4.1 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – – 500 nA VCE = 2 V, VBE = 0 E-B short circuited Collector base leakage current ICBO – – 500 nA VCB = 2 V, IE = 0 Open emitter Emitter base leakage current IEBO – – 10 μA VEB = 0.5 V, IC = 0 Open collector DC current gain hFE 110 180 270 VCE = 3 V, IC = 30 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Transition frequency Symbol fT Values Min. Typ. Max. – 45 – Unit Note / Test Condition GHz VCE = 3 V, IC = 30 mA, f = 1 GHz Collector base capacitance CCB – 0.08 – pF VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.4 – pF VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded Emitter base capacitance CEB – 0.7 – pF VEB = 0.4 V, VCB = 0 V f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP640ESD Testing Circuit Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 34 – IC = 6 mA High linearity operation point Gms – 39.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 25 – IC = 6 mA High linearity operation point S21 – 35 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.6 – IC = 6 mA Associated gain Gass – 30 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 11 – IC = 30 mA 3rd order intercept point OIP3 – 25 – IC = 30 mA Data Sheet 12 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 29 – IC = 6 mA High linearity operation point Gms – 34.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 24.5 – IC = 6 mA High linearity operation point S21 – 32 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.6 – IC = 6 mA Associated gain Gass – 28.5 – IC = 6 mA dBm Linearity ZS = ZL = 50Ω 1 dB gain compression point OP1dB – 11 – IC = 30 mA 3rd order intercept point OIP3 – 25 – IC = 30 mA Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 26 – IC = 6 mA High linearity operation point Gms – 30.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 23.5 – IC = 6 mA High linearity operation point S21 – 28 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.6 – IC = 6 mA Associated gain Gass – 26 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 11.5 – IC = 30 mA 3rd order intercept point OIP3 – 26 – IC = 30 mA Data Sheet 13 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 23.5 – IC = 6 mA High linearity operation point Gms – 26.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 21 – IC = 6 mA High linearity operation point S21 – 24 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.65 – IC = 6 mA Associated gain Gass – 23.5 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 12 – IC = 30 mA 3rd order intercept point OIP3 – 26.5 – IC = 30 mA Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 22.5 – IC = 6 mA High linearity operation point Gms – 25 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 19.5 – IC = 6 mA High linearity operation point S21 – 22 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.65 – IC = 6 mA Associated gain Gass – 22 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 12 – IC = 30 mA 3rd order intercept point OIP3 – 27 – IC = 30 mA Data Sheet 14 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 21 – IC = 6 mA High linearity operation point Gms – 23 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 18 – IC = 6 mA High linearity operation point S21 – 20 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.7 – IC = 6 mA Associated gain Gass – 20 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 12.5 – IC = 30 mA 3rd order intercept point OIP3 – 27 – IC = 30 mA Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gma – 19 – IC = 6 mA High linearity operation point Gms – 19 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 15 – IC = 6 mA High linearity operation point S21 – 17 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 0.8 – IC = 6 mA Associated gain Gass – 16 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 12.5 – IC = 30 mA 3rd order intercept point OIP3 – 26.5 – IC = 30 mA Data Sheet 15 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gma – 14 – IC = 6 mA High linearity operation point Gma – 14.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 11 – IC = 6 mA High linearity operation point S21 – 12.5 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 1.05 – IC = 6 mA Associated gain Gass – 11.5 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 12.5 – IC = 30 mA 3rd order intercept point OIP3 – 26 – IC = 30 mA Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. dB Maximum power gain Low noise operation point Gms – 10 – IC = 6 mA High linearity operation point Gms – 10.5 – IC = 30 mA dB Transducer gain ZS = ZL = 50 Ω Low noise operation point S21 – 4.5 – IC = 6 mA High linearity operation point S21 – 6 – IC = 30 mA dB Minimum noise figure ZS = Zopt Minimum noise figure NFmin – 2 – IC = 6 mA Associated gain Gass – 7 – IC = 6 mA dBm Linearity ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 11 – IC = 30 mA 3rd order intercept point OIP3 – 25.5 – IC = 30 mA Notes 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result. 3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 16 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 5.4 Characteristic DC Diagrams 60 50 IB=325µA IB=275µA IC [mA] 40 IB=225µA 30 IB=175µA IB=125µA 20 IB=75µA 10 IB=25µA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE[V] Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA hFE 1000 100 0.1 1 10 100 IC [mA] Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 17 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 1 0.1 IB [mA] 0.01 0.001 0.0001 0.00001 0.000001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 18 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 1.E-04 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 0.2 0.3 0.4 0.5 0.6 VEB [V] Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 19 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 5.5 Characteristic AC Diagrams 50 45 4.00V 3.00V 40 35 2.50V fT [GHz] 30 25 20 2.00V 15 10 5 0 1.00V 0 10 20 30 IC [mA] 40 50 60 Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V 30 25 OIP3 [dBm] 20 15 10 2V, 1.5GHz 3V, 1.5GHz 2V, 2.4GHz 3V, 2.4GHz 5 0 −5 0 10 20 30 40 50 IC [mA] Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters Data Sheet 20 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 0.2 0.18 0.16 0.12 0.1 C cb [pF] 0.14 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V [V] CB Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 50 45 40 35 Gms G [dB] 30 25 Gma 20 Gms 15 |S21|2 10 5 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA Data Sheet 21 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 42 0.15GHz 39 36 0.45GHz G [dB] 33 30 0.90GHz 27 21 1.50GHz 1.90GHz 2.40GHz 18 3.50GHz 15 5.50GHz 24 12 10.00GHz 9 6 3 0 0 10 20 30 I [mA] C 40 50 60 Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 42 0.15GHz 39 36 0.45GHz G [dB] 33 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz 24 21 3.50GHz 18 15 5.50GHz 12 10.00GHz 9 6 3 0 0 1 2 3 4 5 VCE [V] Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz Data Sheet 22 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 1 1.5 0.5 2 10 0.4 9 8 0.3 10 3 9 8 7 4 7 6 0.2 5 0.1 6 5 5 4 0.1 0 4 0.2 0.3 0.4 0.5 10 0.03 to 10 GHz 3 1 1.5 2 3 4 5 2 3 −0.1 −10 1 −0.2 −5 −4 2 −0.3 −3 1 −0.4 −0.5 −2 −1.5 30 mA 6 mA −1 Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA 1 1.5 0.5 2 0.4 3 1.9GHz 0.3 0.9GHz 4 0.2 5 2.4GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 0.45GHz 1 1.5 2 3 4 5 Ic = 6.0mA I = 30mA c −0.1 5.5GHz −0.2 10 −10 −5 −4 −0.3 −3 −0.4 10GHz −0.5 −2 −1.5 −1 Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA Data Sheet 23 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 10 0.2 5 9 9 0.1 4 10 0.1 0 7 1 6 5 0.2 0.3 0.4 0.5 7 6 −0.1 10 0.03 to 10 GHz 8 8 1.5 2 3 4 5 4 3 5 −10 2 1 4 −0.2 −5 −4 3 2 1 −0.3 −3 −0.4 −0.5 −2 −1.5 30 mA 6 mA −1 Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 I = 30mA C IC = 6.0mA 0.4 0.2 0 0 2 4 6 8 10 f [GHz] Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt Data Sheet 24 Revision 1.1, 2012-09-17 BFP640ESD Electrical Characteristics 4 3.5 NFmin [dB] 3 2.5 2 1.5 1 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 0.5 0 0 10 20 30 40 50 Ic [mA] Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 5 4.5 4 NF50 [dB] 3.5 3 2.5 2 1.5 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz 1 0.5 0 0 10 20 30 40 50 Ic [mA] Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C. Data Sheet 25 Revision 1.1, 2012-09-17 BFP640ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 1.1, 2012-09-17 BFP640ESD Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Description (Marking BFP640ESD: T4s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Data Sheet 27 Revision 1.1, 2012-09-17 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG