BFP640F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-13 RF & Protection Devices Edition 2015-03-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP640F BFP640F, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2015-03-13, Revision 2.0 Page Subjects (major changes since last revision) This data sheet replaces the revision from 2007-05-31. The reason for the new revision is to increase the information content for the circuit designer. The performance parameters are now enlisted in a table containing many relevant application frequencies. The measurements of typical devices have been repeated and the device description has been expanded by adding several new characteristic curves. For customers who bought the product prior to the issue of the new revision the old specifications remain valid. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 2.0, 2015-03-13 BFP640F Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 16 19 Revision 2.0, 2015-03-13 BFP640F List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP640F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP640F: R4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 16 16 17 17 18 19 19 20 20 21 21 22 22 23 23 24 24 25 25 27 27 27 27 Revision 2.0, 2015-03-13 BFP640F List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision 2.0, 2015-03-13 BFP640F Product Brief 1 Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads. Data Sheet 7 Revision 2.0, 2015-03-13 BFP640F Features 2 • • • • • • • • • Features Linear low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA High transition frequency fT = 42 GHz @ 3 V, 30 mA NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA Low power consumption, ideal for mobile applications Very common as GPS low noise amplifier, see respective application notes on Infineon internet page Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available Applications As Low Noise Amplifier (LNA) in • • • • • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP640F TSFP-4-1 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E R4s Revision 2.0, 2015-03-13 BFP640F Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage Values Min. Max. – – 4.1 3.6 Unit V VCEO Note / Test Condition Open base TA = 25 °C TA = -55 °C Collector emitter voltage VCES – 13 V E-B short circuited Collector base voltage VCBO – 13 V Open emitter Emitter base voltage VEBO – 1.2 V Open collector Collector current IC – 50 mA – IB – 3 mA – Ptot – 200 mW TS ≤ 92 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – Base current Total power dissipation 1) 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 2.0, 2015-03-13 BFP640F Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – – 290 K/W – 1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 240 200 Ptot [mW] 160 120 80 40 0 0 25 50 75 T [°C] S 100 125 150 Figure 4-1 Total Power Dissipation Ptot = f (TS) Data Sheet 10 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4.1 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – 1) 1 1 400 401) 1 40 1) 1) nA VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO – nA VCB = 5V, IE = 0 Open emitter Emitter base leakage current IEBO – 1 40 DC current gain hFE 110 180 270 nA VEB = 0.5V, IC = 0 Open collector VCE = 3 V, IC = 30 mA Pulse measured 1) Maximum values not limited by the device but by the short cycle time of the 100% test 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 42 – GHz VCE = 3 V, IC = 30 mA f = 1 GHz Collector base capacitance CCB – 0.09 – pF VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.2 – pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.47 – pF VEB = 0.5 V,VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT C E VB B Bias-T E (Pin 1) IN Figure 5-1 BFP640F Testing Circuit Data Sheet 12 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics Table 5-3 AC Characteristics, VCE = 3 V, f = 0.45 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 33 31 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.55 26 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 10.5 23.5 – – Table 5-4 dB Symbol Values Min. Typ. Max. IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 28.5 26.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.55 23.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 12.5 26 – – IC = 25 mA IC = 25 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 25 22.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.6 20.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 0.9 GHz Parameter Table 5-5 Note / Test Condition IC = 25 mA IC = 25 mA dB IC = 6 mA IC = 6 mA dBm OP1dB OIP3 – – 12 26 13 – – ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 23 20.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.6 19 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 12.5 27 – – Table 5-7 dB Symbol Values Min. Typ. Max. IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 20 18.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.65 17 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 12.5 28 – – IC = 25 mA IC = 25 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 16.5 15.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.75 14 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 25 mA IC = 25 mA AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Table 5-8 Note / Test Condition IC = 25 mA IC = 25 mA dB IC = 6 mA IC = 6 mA dBm OP1dB OIP3 – – 12 27.5 14 – – ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics Table 5-9 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 12.5 11.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.0 11 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 12.5 27.5 – – IC = 25 mA IC = 25 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 25 mA IC = 25 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 15 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 5.4 Characteristic DC Diagrams 30 160µA 140µA 25 120µA 100µA IC [mA] 20 80µA 15 60µA 40µA 10 20µA 5 0 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA 3 hFE 10 2 10 0 10 1 10 I [mA] 2 10 c Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 16 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 2 10 1 10 0 IC [mA] 10 −1 10 −2 10 −3 10 −4 10 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.55 0.6 0.65 0.7 VBE [V] 0.75 0.8 0.85 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 17 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics −9 10 −10 IB [A] 10 −11 10 −12 10 −13 10 0.6 0.7 0.8 0.9 VEB [V] 1 1.1 1.2 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 18 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 5.5 Characteristic AC Diagrams Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C. 45 40 4.00V 35 3.00V fT [GHz] 30 2.50V 25 20 15 2.00V 10 5 0 1.50V 1.00V 0 10 20 30 IC [mA] 40 50 60 Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V 30 25 OIP3 [dBm] 20 15 10 2V, 1500MHz 3V, 1500MHz 2V, 2400MHz 3V, 2400MHz 5 0 0 5 10 15 20 I [mA] C 25 30 35 40 Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz Data Sheet 19 Revision 2.0, 2015-03-13 BFP640F 27 26 25 18 20 21 22 23 24 28 29 30 8 109 1 1 1132 1154 Electrical Characteristics IC [mA] 27 26 20 1 1 6 18 7 20 19 21 22 23 24 25 25 28 15 27 26 25 5 17 1 22 20 21 2.5 VCE [V] 19 2 1.5 26 24 23 22 21 20 19 18 10 25 24 23 3 23 22 20 21 3.5 19 4 12 11 10 9 6 8 7 13 5 −2 30 0 1 2 Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz 25 7 6 11 8 IC [mA] 11 10 9 20 5 3 4 12 10 15 9 8 5 6 8 7 7 4 3 1.5 7 6 6 5 10 4 3 2 1 0 5 −1 1 10 9 2 1 0 −1 2 5 4 3 2.5 VCE [V] 2 1 0 −1 3 4 3 3.5 4 Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz Data Sheet 20 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 0.2 CCB [pF] 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 V CB 2.5 3 3.5 4 [V] Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 40 35 30 G ms G [dB] 25 20 G ma 15 2 |S | 21 10 5 0 0 2 4 6 8 10 f [GHz] Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA Data Sheet 21 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 45 40 0.15GHz 35 0.45GHz G [dB] 30 0.90GHz 25 1.50GHz 1.90GHz 2.40GHz 20 3.50GHz 15 5.50GHz 10 10.00GHz 5 0 0 10 20 30 I [mA] 40 50 60 C Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 40 0.15GHz 35 0.45GHz G [dB] 30 0.90GHz 25 1.50GHz 1.90GHz 20 2.40GHz 3.50GHz 15 5.50GHz 10 10.00GHz 5 0 0 1 2 3 4 5 VCE [V] Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz Data Sheet 22 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 6 GHz 0.1 10 5.0 6.0 5.0 4.01 3.0 4.0 2.0 6.0 0.1 0 0.2 0.3 0.4 0.5 −0.1 1.5 2 3 4 5 0.03 0.03 −10 1.0 3.0 −0.2 −5 2.0 −4 −0.3 −3 1.0 −0.4 −0.5 −2 −1.5 −1 6.0mA 25mA Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.45 to 10 GHz 0.2 3.5 2.4 0.1 0.1 0.2 0.3 0.4 0.5 8.0 −0.1 1.9 10 1.5 0.9 5.5 0 5 0.451 1.5 2.4 3.5 5.5 1.5 2 0.453 4 5 −10 8.0 −0.2 −5 10.0 10.0 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 6mA 25mA Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA Data Sheet 23 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 6 GHz 0.1 10 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.03 0.03 6.0 5.0 4.0 3.0 2.0 6.0 1.0 5.0 4.0 3.0 2.0 −0.1 −0.2 −10 −5 1.0 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 6.0mA 25mA Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 I = 25mA C 0.6 I = 6.0mA C 0.4 0.2 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt Data Sheet 24 Revision 2.0, 2015-03-13 BFP640F Electrical Characteristics 3 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz 2.5 NFmin [dB] 2 1.5 1 f = 0.9GHz 0.5 f = 0.45GHz 0 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 4 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz 3.5 3 NF50 [dB] 2.5 2 1.5 1 f = 1.9GHz f = 1.5GHz 0.5 0 f = 0.9GHz f = 0.45GHz 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 25 Revision 2.0, 2015-03-13 BFP640F Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP640F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFP640F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 2.0, 2015-03-13 BFP640F Package Information TSFP-4-1 7 Package Information TSFP-4-1 0.2 ±0.05 2 10° MAX. 1 3 1.2 ±0.05 0.2 ±0.05 4 0.55 ±0.04 0.8 ±0.05 1.4 ±0.05 0.2 ±0.05 0.15 ±0.05 0.5 ±0.05 0.5 ±0.05 TSFP-4-1, -2-PO V04 Figure 7-1 Package Outline 0.9 0.45 0.35 0.5 0.5 TSFP-4-1, -2-FP V04 Figure 7-2 Package Footprint Figure 7-3 Marking Description (Marking BFP640F: R4s) 0.2 Pin 1 8 1.4 4 0.7 1.55 TSFP-4-1, -2-TP V05 Figure 7-4 Tape Dimensions Data Sheet 27 Revision 2.0, 2015-03-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG