BFP740 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2015-01-20 RF & Protection Devices Edition 2015-01-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP740 BFP740, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2015-01-20, Revision 1.1 Page Subjects (major changes since last revision) This data sheet replaces the revision from 2009-12-04. The reason for the new revision is to increase the information content for the circuit designer. The performance parameters are now enlisted in a table containing many relevant application frequencies. The measurements of typical devices have been repeated and the device description has been expanded by adding several new characteristic curves. For customers who bought the product prior to the issue of the new revision the old specifications remain valid. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2015-01-20 BFP740 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 16 19 Revision 1.1, 2015-01-20 BFP740 List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP740 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), VCE = Parameter in V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP740: R7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 16 16 17 17 18 19 19 20 20 21 21 22 22 23 23 24 24 25 25 27 27 27 27 Revision 1.1, 2015-01-20 BFP740 List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision 1.1, 2015-01-20 BFP740 Product Brief 1 Product Brief The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 11 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1, 2015-01-20 BFP740 Features 2 • • • • • • • • Features Very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology OIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mA High transition frequency fT = 44 GHz @ 3 V, 25 mA NFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mA Maximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mA Low power consumption, ideal for mobile applications, very common in WLAN Wi-Fi applications Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available 3 2 4 1 Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP740 SOT343 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E R7s Revision 1.1, 2015-01-20 BFP740 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage Values Min. Max. – – 4.0 3.5 Unit V VCEO Note / Test Condition Open base TA = 25 °C TA = -55 °C Collector emitter voltage VCES – 13 V E-B short circuited Collector base voltage VCBO – 13 V Open emitter Emitter base voltage VEBO – 1.2 V Open collector Collector current IC – 45 mA – IB – 4 mA – Ptot – 160 mW TS ≤ 100 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – Base current Total power dissipation 1) 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.1, 2015-01-20 BFP740 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – – 310 K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 4-1 Total Power Dissipation Ptot = f (TS) Data Sheet 10 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – 1) 1 1 400 401) 1 40 1) 1) nA VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0 E-B short circuited Collector base leakage current ICBO – nA VCB = 5V, IE = 0 Open emitter Emitter base leakage current IEBO – 1 40 DC current gain hFE 160 250 400 nA VEB = 0.5V, IC = 0 Open collector VCE = 3 V, IC = 25 mA Pulse measured 1) Maximum values not limited by the device but by the short cycle time ot the 100% test 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 44 – GHz VCE = 3 V, IC = 25 mA f = 2 GHz Collector base capacitance CCB – 0.08 – pF VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.35 – pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.45 – pF VEB = 0.5 V,VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP740 Testing Circuit Data Sheet 12 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics Table 5-3 AC Characteristics, VCE = 3 V, f = 0.45 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 31.5 28.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 26 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6.5 22 – – Table 5-4 dB Symbol Values Min. Typ. Max. IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 28 27 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.45 24.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 22.5 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 26 25 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 22.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 15 mA IC = 15 mA AC Characteristics, VCE = 3 V, f = 0.9 GHz Parameter Table 5-5 Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm OP1dB OIP3 – – 7 23 13 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 25 23.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.5 21.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 9 24.5 – – Table 5-7 dB Symbol Values Min. Typ. Max. IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 24 22 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.55 20 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 8 24.5 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 22 19 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.65 17 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 15 mA IC = 15 mA AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Table 5-8 Note / Test Condition IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm OP1dB OIP3 – – 9 25.5 14 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics Table 5-9 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 19.5 15 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.85 14 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 9 24.5 – – IC = 15 mA IC = 15 mA dB IC = 6 mA IC = 6 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 15 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 5.4 Characteristic DC Diagrams IC [mA] 26 24 100μA 22 90μA 20 80μA 18 70μA 16 60μA 14 50μA 12 40μA 10 30μA 8 20μA 6 10μA 4 2 0 0 1 2 3 4 5 VCE [V] Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA 3 hFE 10 2 10 0 10 1 10 I [mA] 2 10 C Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 16 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 2 10 1 10 0 IC [mA] 10 −1 10 −2 10 −3 10 −4 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Data Sheet 17 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics −9 10 −10 10 −11 IB [A] 10 −12 10 −13 10 −14 10 0.8 0.9 1 VEB [V] 1.1 1.2 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Data Sheet 18 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 5.5 Characteristic AC Diagrams Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C. 48 44 4.00V 40 36 3.50V 32 fT [GHz] 3.00V 28 24 20 2.50V 16 12 2.00V 8 4 0 1.00V 0 10 20 30 40 50 IC [mA] Figure 5-7 Transition Frequency fT = f (IC), VCE = Parameter in V 26 24 22 20 OIP3 [dBm] 18 16 14 12 10 8 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz 6 4 2 0 0 5 10 15 I [mA] C 20 25 30 Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters Data Sheet 19 Revision 1.1, 2015-01-20 BFP740 26 25 23 24 26 25 6 87 9 1110 112 143 15 16 17 1 198 20 21 22 Electrical Characteristics 22 1 132 14 15 16 17 18 19 20 21 5 22 22 23 21 20 1 1.5 2 25 23 19 24 20 21 17 18 16 14 15 10 25 24 15 23 IC [mA] 20 24 21 20 19 2.5 VCE [V] 3 3.5 4 Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 9 10 11 11 8 20 12 7 25 10 9 IC [mA] 8 10 9 15 8 8 7 7 6 10 5 4 3 2 1 0 5 2 9 7 6 5 4 3 2 1 0 2.5 8 6 5 4 3 2 1 0 −1 3 VCE [V] 6 5 4 3 2 1 0 3.5 4 Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz Data Sheet 20 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 0.2 CCB [pF] 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 V CB 2.5 3 3.5 4 [V] Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 40 35 30 Gms G [dB] 25 20 |S |2 Gma 21 15 10 5 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA Data Sheet 21 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz Gmax [dB] 25 20 5.50GHz 15 10.00GHz 10 5 0 0 5 10 15 20 25 30 I [mA] 35 40 45 50 55 C Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 40 0.15GHz 35 0.45GHz 30 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz Gmax [dB] 25 20 15 10.00GHz 10 5 0 0 0.5 1 1.5 2 V 2.5 3 [V] 3.5 4 4.5 5 CE Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz Data Sheet 22 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 1 1.5 0.5 2 10.0 9.0 0.4 10.0 9.0 8.0 8.0 7.0 0.3 3 7.0 4 6.0 6.0 0.2 5 5.0 0.03 to 10 GHz 5.0 0.1 10 4.0 0.1 0 0.2 0.3 0.4 0.5 1 4.0 1.5 2 3 4 5 0.03 0.03 3.0 −0.1 −10 −0.2 3.0 2.0 −5 −4 −0.3 1.0 −0.4 −3 1.0 2.0 −0.5 −2 −1.5 −1 6.0mA 15mA Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 0.45 to 10 GHz 4 0.2 5 3.5 1.9 4.5 0.1 0.1 0 0.2 0.3 0.4 0.5 5.5 2.4 2.4 1.9 4.5 3.5 1.5 1 1.5 0.9 0.45 10 1.5 0.9 2 0.45 3 4 5 5.5 −0.1 −10 8.0 8.0 −0.2 −5 10.0 −4 −0.3 10.0 −3 −0.4 −0.5 −2 −1.5 −1 6mA 15mA Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA Data Sheet 23 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 10.0 4 10.0 0.2 5 9.0 0.03 to 10 GHz 8.0 8.0 0.1 9.0 10 7.0 7.0 0.1 0 6.0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 5.0 6.0 0.03 0.03 4.0 5.0 −0.1 −10 3.0 4.0 −0.2 −5 2.0 1.0 −4 3.0 −0.3 1.0 −3 2.0 −0.4 −0.5 −2 −1.5 6.0mA −1 15mA Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 IC = 15mA 0.4 I = 6.0mA C 0.2 0 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt Data Sheet 24 Revision 1.1, 2015-01-20 BFP740 Electrical Characteristics 2.4 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz 2.2 2 1.8 NFmin [dB] 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] NF50 [dB] Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.9GHz f = 1.5GHz f = 0.9GHz f = 0.45GHz 0 5 10 15 20 25 IC [mA] Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 25 Revision 1.1, 2015-01-20 BFP740 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP740 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 1.1, 2015-01-20 BFP740 Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.15 -0.05 +0.1 0.6 -0.05 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Description (Marking BFP740: R7s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Data Sheet 27 Revision 1.1, 2015-01-20 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG