Technical Report, 2008-Dec-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 Application: WiMax LNA for 2.3 – 2.7 GHz Revision: Rev. 1.0 Date: 2008-Dec-03 RF and Protection Devices Measurement Report 1/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 4/2/14. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Measurement Report 2/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application 1. Overview Infineon Device: BFP740 Silicon Germanium RF Bipolar Transistor Application: WiMax LNA 2.3 – 2.7 GHz PCB Marking: Ver. 740-080929 Rev A 2. Summary of Measurement Results Table 2-1: Summary of Measurement Results Parameter Symbol Value Unit Note/Test Condition Frequencies Freq 2.3 … 2.7 GHz DC Voltage Vcc 3.3 V DC Current Icc 10 mA Gain G 18.4 dB Power @ port1= -30 dBm Noise Figure NF 1.0 dB Including SMA connectors and PCB losses of 0.1dB Input Return Loss RLin 11.3 dB Output Return Loss RLout 11.2 dB Reverse Isolation IRev 25 dB Input P1dB IP1dB -13.3 dBm Output P1dB OP1dB 4.1 dBm Input IP3 IIP3 3.4 dBm Output IP3 OIP3 22 dBm Stability factor k >1 Max RF input Power Pin 10 Measurement Report 3/9 Power @ port2 = -10 dBm Power @ Input = -30 dBm ∆f =1 MHz Stability measured from 100MHz to 20GHz dBm With CW power tested on BFP740 transistor for 1000hr. 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application 3. Description: This report presents the measurement results of the Low Noise Amplifier using the SiGe:C bipolar transistor BFP740 from Infineon technologies with microstrip line on emitter as emitter degeneration inductance for the 2.3 – 2.7 GHz WiMax application. The LNA brings a gain of 18.4dB on the frequency band from 2.3GHz to 2.7GHz with a noise figure of 1.0 dB (including the SMA connector and PCB losses of 0.1dB). Furthermore, this device provides an unconditionally stability from 100MHz to 20GHz. With a current of 10mA, this circuit achieves quite high input P1dB of -13.3 dBm and high input IP3 of +3.4 dBm. By using microstrip lines between the emitter pins of the BFP740 and the ground as emitter degeneration inductance provides an optimum input and output matching. Anyway, we can reach a better value of the stability. Measurement Report 4/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application 4. Schematics: Figure 4-1: Schematics of the LNA using the BFP740 Table 4-1: Bill of Materials Symbol Value Unit Size Manufacturer Comment C1 8.2 pF 0402 various Input DC block, input matching C2 100 nF 0402 various RF bypass/ RF block C3 100 nF 0402 various RF bypass/ RF block C4 22 pF 0402 various Output DC block, Output matching L1 2.2 nH 0402 Murata LQG15HS DC feed, input matching L2 2.2 nH 0402 Murata LQG15HS DC feed to collector, output matching R1 120 Ω 0402 various DC bias, drop voltage for collector R2 30 kΩ 0402 various DC bias for base R3 12 Ω 0402 various Stability (below 2Ghz) SOT343 Infineon BFP740 SiGe transistor Q1 M1 0.2x0.9 mm² (microstrip line) width x length in mm M2 0.2x0.9 mm² (microstrip line) width x length in mm Measurement Report 5/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application 5. Measured Graphs Figure 5-1: Power gain of BFP740 Figure 5-2: Input matching of BFP740 Measurement Report 6/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Figure 5-3: Output matching of BFP740 Figure 5-4: Reverse Isolation of BFP740 Measurement Report 7/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Figure 5-5: Stability Factor of BFP740 Measurement Report 8/9 2008-12-03 Technical Report ___________________________________________________________ LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application 6. Picture of the board and Layout information Figure 6-1: Photo of the LNA circuit (PCB Marking: 740-080929 Rev A) Figure 6-2: Layout Information Measurement Report 9/9 2008-12-03