BFP740 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz • High maximum stable gain Gms = 27 dB at 1.8 GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP740 1Pb-containing Marking R7s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 package may be available upon special request 2009-12-04 1 BFP740 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0°C 4 TA ≤ 0°C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 30 Base current IB 3 Total power dissipation1) Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 89°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS ≤ 380 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 4 4.7 - V ICES - - 30 µA ICBO - - 100 nA IEBO - - 3 µA hFE 160 250 400 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 25 mA, VCE = 3 V, pulse measured 1T S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 2009-12-04 2 BFP740 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 42 - Ccb - 0.08 0.14 Cce - 0.24 - Ceb - 0.44 - GHz IC = 25 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt - 0.5 - IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt - 0.85 - G ms - 27 - dB G ma - 17 - dB Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain dB IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz - 24.5 - f = 6 GHz - 13.5 - IP 3 - 25 - P-1dB - 11 - Third order intercept point at output2) dBm VCE = 3 V, I C = 25 mA, ZS =ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 25 mA, VCE = 3 V, ZS =ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 2009-12-04 3 BFP740 Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 12 GHz using typical devices. The BFP740 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. 2009-12-04 4 BFP740 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 180 mW K/W RthJS Ptot 140 120 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 2 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s TS 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = ƒ (V CB) Ptotmax/P totDC = ƒ(tp) f = 1 MHz 10 2 0.18 0.16 0.14 10 0.12 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 Ccb [pF] Ptotmax /PtotDC 0.2 0.1 0.08 0.06 0.04 0.02 10 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 TP 2 4 6 8 10 12 VCB [V] 2009-12-04 5 BFP740 Third order Intercept Point IP3 = ƒ (IC) Transition frequency fT = ƒ(IC) (Output, ZS = ZL = 50 Ω ) f = 2 GHz VCE = parameter, f = 1.8 GHz VCE = parameter 30 50 27 45 4.00V 2V to 4V 3.00V 24 40 2.00V 21 35 30 1.00V fT [GHz] IP3 [dBm] 18 15 25 1.00V 12 20 9 15 6 10 3 5 0.75V 0.50V 0 0 0 5 10 15 20 25 30 35 0 5 10 15 I [mA] 20 25 30 35 I [mA] C C Power gain Gma, Gms = ƒ (f) Power gain Gma, Gms = ƒ (IC) VCE = 3 V, I C = 25 mA VCE = 3 V f = parameter 55 34 32 50 0.90GHz 30 45 28 1.80GHz 40 26 2.40GHz 3.00GHz 24 G [dB] G [dB] 35 30 Gms 22 4.00GHz 20 25 5.00GHz G 18 ma 20 6.00GHz 2 |S21| 16 15 14 10 12 5 10 0 1 2 3 4 5 6 0 f [GHz] 5 10 15 20 25 30 35 IC [mA] 2009-12-04 6 BFP740 Power gain Gma, Gms = ƒ (VCE) Noise figure F = ƒ(I C) IC = 25 mA VCE = 3V, f = parameter f = parameter ZS = ZSopt 2 36 1.8 32 0.90GHz 1.6 28 1.80GHz 24 2.40GHz 3.00GHz 1.4 4.00GHz 1.2 f = 6GHz f = 5GHz f = 3GHz f = 1.8GHz f = 0.9GHz 20 F [dB] G [dB] 5.00GHz 6.00GHz 1 16 0.8 12 0.6 8 0.4 4 0.2 0 0 0 0.5 1 1.5 2 2.5 V CE 3 3.5 4 4.5 5 0 5 10 15 [V] 20 25 30 I [mA] c Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Noise figure F = ƒ(f) VCE = 3 V, ZS = ZSopt 2 1.4 1.8 1.2 1.6 Z = 50Ω 1.4 1 S Z =Z S Sopt 1.2 F [dB] F [dB] 0.8 1 0.6 0.8 I = 25mA C 0.6 I = 8mA C 0.4 0.4 0.2 0.2 0 0 0 5 10 15 20 25 30 0 I [mA] 1 2 3 4 5 6 7 f [GHz] c 2009-12-04 7 BFP740 Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 8 mA / 25 mA 1 1.5 2 0.5 0.4 I = 8mA c 0.3 3 4 5 0.2 3GHz 0.1 0.2 0 0.4 6GHz 4GHz 1 2.4GHz 10 1.8GHz 0.9GHz 2 4 5GHz −0.1 −10 6GHz −0.2 −5 −4 I = 25mA −0.3 c −3 −0.4 −0.5 −2 −1.5 −1 2009-12-04 8 Package SOT343 BFP740 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2009-12-04 9 BFP740 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2009-12-04 10