INFINEON BFP740

BFP740
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
3
• Provides outstanding performance for
2
4
a wide range of wireless applications
1
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
Gms = 27 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740
1Pb-containing
Marking
R7s
1=B
Pin Configuration
2=E
3=C
4=E
-
Package
-
SOT343
package may be available upon special request
2009-12-04
1
BFP740
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA > 0°C
4
TA ≤ 0°C
3.5
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
30
Base current
IB
3
Total power dissipation1)
Ptot
160
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
mA
TS ≤ 89°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 2)
RthJS
≤ 380
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)CEO
4
4.7
-
V
ICES
-
-
30
µA
ICBO
-
-
100
nA
IEBO
-
-
3
µA
hFE
160
250
400
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
-
IC = 25 mA, VCE = 3 V, pulse measured
1T
S is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA please refer to Application Note Thermal Resistance
2009-12-04
2
BFP740
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
-
42
-
Ccb
-
0.08
0.14
Cce
-
0.24
-
Ceb
-
0.44
-
GHz
IC = 25 mA, VCE = 3 V, f = 2 GHz
Collector-base capacitance
pF
VCB = 3 V, f = 1 MHz, V BE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, V BE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
dB
F
IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
-
0.5
-
IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
-
0.85
-
G ms
-
27
-
dB
G ma
-
17
-
dB
Power gain, maximum stable1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
|S21e|2
Transducer gain
dB
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
-
24.5
-
f = 6 GHz
-
13.5
-
IP 3
-
25
-
P-1dB
-
11
-
Third order intercept point at output2)
dBm
VCE = 3 V, I C = 25 mA, ZS =ZL=50 Ω, f = 1.8 GHz
1dB Compression point at output
IC = 25 mA, VCE = 3 V, ZS =ZL=50 Ω, f = 1.8 GHz
1/2
ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e |
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1G
2009-12-04
3
BFP740
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website: www.infineon.com/rf.models. Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 12 GHz using typical
devices. The BFP740 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
2009-12-04
4
BFP740
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
180
mW
K/W
RthJS
Ptot
140
120
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 2
80
60
40
20
0
0
15
30
45
60
75
90 105 120 °C
10 1 -7
10
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
TS
10
0
tp
Permissible Pulse Load
Collector-base capacitance Ccb = ƒ (V CB)
Ptotmax/P totDC = ƒ(tp)
f = 1 MHz
10 2
0.18
0.16
0.14
10
0.12
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
Ccb [pF]
Ptotmax /PtotDC
0.2
0.1
0.08
0.06
0.04
0.02
10
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
TP
2
4
6
8
10
12
VCB [V]
2009-12-04
5
BFP740
Third order Intercept Point IP3 = ƒ (IC)
Transition frequency fT = ƒ(IC)
(Output, ZS = ZL = 50 Ω )
f = 2 GHz
VCE = parameter, f = 1.8 GHz
VCE = parameter
30
50
27
45
4.00V
2V to 4V
3.00V
24
40
2.00V
21
35
30
1.00V
fT [GHz]
IP3 [dBm]
18
15
25
1.00V
12
20
9
15
6
10
3
5
0.75V
0.50V
0
0
0
5
10
15
20
25
30
35
0
5
10
15
I [mA]
20
25
30
35
I [mA]
C
C
Power gain Gma, Gms = ƒ (f)
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V, I C = 25 mA
VCE = 3 V
f = parameter
55
34
32
50
0.90GHz
30
45
28
1.80GHz
40
26
2.40GHz
3.00GHz
24
G [dB]
G [dB]
35
30
Gms
22
4.00GHz
20
25
5.00GHz
G
18
ma
20
6.00GHz
2
|S21|
16
15
14
10
12
5
10
0
1
2
3
4
5
6
0
f [GHz]
5
10
15
20
25
30
35
IC [mA]
2009-12-04
6
BFP740
Power gain Gma, Gms = ƒ (VCE)
Noise figure F = ƒ(I C)
IC = 25 mA
VCE = 3V, f = parameter
f = parameter
ZS = ZSopt
2
36
1.8
32
0.90GHz
1.6
28
1.80GHz
24
2.40GHz
3.00GHz
1.4
4.00GHz
1.2
f = 6GHz
f = 5GHz
f = 3GHz
f = 1.8GHz
f = 0.9GHz
20
F [dB]
G [dB]
5.00GHz
6.00GHz
1
16
0.8
12
0.6
8
0.4
4
0.2
0
0
0
0.5
1
1.5
2
2.5
V
CE
3
3.5
4
4.5
5
0
5
10
15
[V]
20
25
30
I [mA]
c
Noise figure F = ƒ(IC )
VCE = 3V, f = 1.8 GHz
Noise figure F = ƒ(f)
VCE = 3 V, ZS = ZSopt
2
1.4
1.8
1.2
1.6
Z = 50Ω
1.4
1
S
Z =Z
S
Sopt
1.2
F [dB]
F [dB]
0.8
1
0.6
0.8
I = 25mA
C
0.6
I = 8mA
C
0.4
0.4
0.2
0.2
0
0
0
5
10
15
20
25
30
0
I [mA]
1
2
3
4
5
6
7
f [GHz]
c
2009-12-04
7
BFP740
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, I C = 8 mA / 25 mA
1
1.5
2
0.5
0.4
I = 8mA
c
0.3
3
4
5
0.2
3GHz
0.1
0.2
0
0.4
6GHz
4GHz
1
2.4GHz
10
1.8GHz
0.9GHz
2
4
5GHz
−0.1
−10
6GHz
−0.2
−5
−4
I = 25mA
−0.3
c
−3
−0.4
−0.5
−2
−1.5
−1
2009-12-04
8
Package SOT343
BFP740
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
0.6 -0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
2009-12-04
9
BFP740
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2009-12-04
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